The recombination kinetics of long-lived photoexcited carriers in a-Si:H at low temperatures ( T∼50 K) are investigated by electron spin resonance. The carrier recombination kinetics over at least the first 30 min after cessation of the photoexcitation can be explained by non-geminate recombination of randomly distributed carriers assuming charge neutrality. The decay curves are well fit to a model in which the recombination rate only depends on the intra-pair distance of the photoexcited carriers and is independent of the specific slopes of the conduction and valence band tails. It is shown that the residual photoexcited carrier concentration after long times is independent of the generation rate.