Doping Concentration Research Articles

A theoretical study on the insights of designing and optimization of a CsSn(IxBr1-x)3 based solar cell

This work focuses on designing and optimizing a lead-free perovskite solar cell. The significance of band gap grading in obtaining better performance of the solar cell was studied in detail with CsSn(IxBr1-x)3 () being used as the active absorber material. The device showed a maximum power conversion efficiency (PCE) of when the interfacial defects were not considered. The optimum thickness was obtained to be 1 μm, and the corresponding doping concentration was 1020 cm-3. Further, a detailed discussion on the band diagrams, electric fields, and different recombination processes has been carried out in this work to get an idea about the varying PCE values at different operating conditions. The presence of Shockley-Read-Hall (SRH) recombination at various temperature values was observed, which partially contributed to the reduction in PCE values at higher temperatures. This work also discusses briefly about the probable losses involved with the device, which may be considered as the plausible reasons for obtaining PCE values less than the SQ limit. This information opens up a wide window for researchers to experimentally fabricate solar cells with proper cautions so that a device with PCE value exceeding Shockley Quisser (SQ) limit can be made available commercially.

Performance optimization of MoS2-doped PVDF-HFP nanofiber triboelectric nanogenerator as sensing technology for smart cities

The greatest potential for resolving today's energy crisis caused by social globalization is the invention of nanogenerators. Triboelectric nanogenerators (TENGs) are among the most advanced and promising technologies because of their simple and affordable device design. TENGs can capture mechanical energy from our surroundings. Herein, we fabricated a TENG device using a novel MoS2-doped poly (vinylidene fluoride-co hexafluoropropylene) (PVDF-HFP) electrospun fiber and amino-functionalized reduced graphene oxide-doped polyurethane (PU/A-rGO) electrospun fiber as tribonegative and tribopositive materials, respectively. The concentration of MoS2 nanofiller doping in PVDF-HFP fiber was varied to study and optimize the output performance of TENG. The highest open circuit potential of 150 V, short circuit current of 4.2 μA, and power density of 0.17 Wm−2 are displayed by the 3 wt% MoS2 filled PVDF-HFP and 2 wt% A-rGO-doped PU-based (3PHM-PU/2A-rGO) TENG device. The surface potential of the 3PHM fiber showed a saturation reading of -832 V, which is 4.3 times greater than that of 0PHM fiber (0PHM -190 V). Lastly, the TENG device is used to demonstrate practical and instantaneous applications like LED lighting and the operation of portable electronics by harvesting mechanical energy. Furthermore, the TENG device shows a lot of potential in using smart streetlight sensor applications.

Synergistic impacts of novel tantalum doping in BiVO4 for effective photocatalytic applications, antimicrobial activity, and antioxidant aspect

This paper reports the production of pure and Ta-doped (1 %, 2 %, 3 %, and 4 %) BiVO4 nanoparticles (NPs) for MB dye degradation. UV–Vis, FTIR, SEM, PL, and XRD techniques were used to analyze the samples. Photocatalysts (BiVO4, Ta-doped BiVO4) NPs have been used to study the photocatalytic activity of these materials for the degradation of methylene blue (MB) in response to visible light. The band gap reduction from 2.7 to 1.98 eV and the photogeneration of electron-hole pairs have also been demonstrated by UV–visible and PL spectroscopy. According to FTIR spectroscopy analysis, Bismuth, Tantalum, Vanadium, Oxygen, and Carbon are all present in the synthesized material. As the dopant concentration rises, the XRD data show that the crystallite size decreases. The crystallite size of the optimal (4 % Ta-doped BiVO4) is 23 nm, whereas the crystallite size of the 2 % Ta-doped BiVO4 is 39 nm. The SEM image shows that particle size reduces when dopant concentration rises. In comparison to previous synthesized materials, the 4 % Ta-doped BiVO4 NPs have a smaller band gap, crystalline size, and recombination rate. Therefore, using the co-precipitation process, 4 % Ta-doped BiVO4 NPs degrade the MB dye (86 %) in 120 min, making them an ideal material. The findings of this study will be applied to wastewater treatment.

Investigation of Sr-substituted Ba1-xSrx(Zn1/3Nb2/3)O3 complex perovskites: structural, electrical and electrochemical properties

Herein we report the structural, dielectric and electrochemical properties of Ba1-xSrx(Zn1/3Nb2/3)O3 (BSZN, 0 ≤ x ≤1) solid solution synthesised by solid-state reaction. A complete substitutional solid solution was obtained, wherein the BSZN cubic perovskites of the space group of Pmm were obtained at x ≤ 0.6 while the pseudo-cubic phases were discernible at x > 0.6. The nano-sized crystallites, as determined by both Scherrer and Williamson-Hall analyses, supported the claim of large polyhedral grains of 0.1 to 0.3 μm by FE-SEM. Both ε′ and tan δ were found to vary consistently with increasing dopant concentration, except for an anomalous observation for the composition, x = 0.6 with the lowest tan δ of 0.0783 and the highest ε′ of 27.5. Such phenomenon could be attributed to the combined effects of larger grain size, higher relative density and stronger polarisation per molar volume. The impedance analysis revealed that these BSZN perovskites were of the negative temperature coefficient of resistance (NTCR) type. The combined plots of imaginary modulus (M″) and impedance (Z″) against frequency showed the short-range movement of localised charge carriers, suggesting a non-Debye-type relaxation process.

Strong multi-mode upconversion luminescence of YbVO4: Er3+ phosphors for multimode optical thermometry

This study explored the multi-mode upconversion luminescence in YbVO4: Er3+ under a 980nm laser. The optimal doping concentration of Er3+ ions in YbVO4: Er3+ is 0.02. The phosphor exhibits green (527nm, 2H11/2→4I15/2 and 553nm, 4S3/2→4I15/2), red (654nm, 4F9/2→4I15/2) and near-infrared emissions (803nm, 4I9/2→4I15/2). A multi-mode temperature sensor of YbVO4: Er3+ was developed, featuring three temperature sensing modes based on the luminescent intensity ratio (LIR) of 2H11/2/4S3/2 thermally coupled level, as well as the LIR of 2H11/2/4F9/2 and 4S3/2/4I9/2 non-thermally coupled levels. Corresponding maximum relative sensitivities were determined to be 1.21% K−1 at 298K, 0.93% K−1 at 298K, and 0.33% K−1 at 473K, respectively. The phosphor demonstrates notable temperature sensitivity, highlighting its potential in optical temperature sensing. This study introduces an innovative platform for crafting multi-mode self-reference optical temperature sensors, presenting substantial advancements in the field.

Enhancement of the Photoluminescent Intensity of YVO4: Er, Yb UCNPs Using a Simple Coprecipitation Synthesis Method.

Yttrium vanadate (YVO4) is a non-toxic ceramic matrix that, when doped with lanthanides, can be used as a photoluminescent biosensor. In this study, we meticulously synthesized upconversion nanoparticles (UCNPs) of YVO4 via chemical coprecipitation, using Er3+ and Yb3+ ions for codoping. The light emission achieved through upconversion mechanisms enables the excitation of nanoparticles with infrared light rather than ultraviolet light, enhancing the potential of current bioimaging techniques. The light emission intensity of our YVO4: Er, Yb UCNPs, a key factor in their effectiveness, depended on various easily adjustable factors during the synthesis, such as the dopant concentration, the heat treatment, and the cleaning process. The UCNPs were characterized using a range of advanced techniques, including X-ray diffraction (XRD) and Rietveld refinements, as well as Raman, photoluminescence (PL), and ultraviolet-visible (UV-vis) spectroscopies, and high-resolution transmission electron microscopy (HRTEM). We found the most convenient stoichiometry to obtain the YVO4: Er, Yb UCNPs and showed that a rigorous thermal treatment was necessary to achieve light emission through upconversion mechanisms. We also discovered that some porosity characteristics can be promoted in the YVO4: Er, Yb UCNPs during the cleaning process, depending on the solvent employed. The porosity and morphology of the nanoparticles could be predicted using the microstrain values obtained from the refinement of the crystalline structures. All these meticulous steps in our research have enabled us to develop an efficient synthesis pathway to produce YVO4: Er, Yb UCNPs with high photoluminescent intensity.

Germanium-incorporated Si-Ge-Si heterojunction phototransistors for a high-limit of detection and wide linear dynamic range near-infrared light detection

This paper investigates overcoming the limitations of conventional silicon (Si) bipolar junction transistors (BJTs) for near-infrared (NIR) light detection. Silicon BJTs have inherent limitations in the NIR region due to silicon’s bandgap. To address this, the paper proposes high-performance silicon-germanium-silicon (Si-Ge-Si) heterojunction bipolar phototransistors (HPTs). The key innovation is introducing a thin germanium (Ge) layer at the base-collector junction and engineering its doping concentration. This Ge layer extends the BJT phototransistor’s optical response into the NIR region by enhancing optical absorption. The paper analyses the performance of the HPTs, demonstrating linear photoresponsivity of 432 mA/W over a wide optical power range, leading to an exceptional linear dynamic range of 159 dB and a very low dark current, which produces a limit of detection of -99.64 dBm. Additionally, the device exhibits a large photo-to-dark current ratio of 2.16 ×107 (at optical power of 5 µW) and a fast response time of 11.35 ps to modulated NIR optical signals within the linear dynamic range. This research paves the way for high-performance CMOS-compatible NIR phototransistors using Si-Ge-Si heterostructures.

Biofabrication and Characterisation of Ni‐Doped SnO2 Nanoparticles With Enhanced Cytotoxicity, Antioxidant, Antimicrobial and Photocatalytic Activities

ABSTRACTThe present work focuses on Annona muricata leaf extract–mediated green synthesis of pure and nickel‐doped tin oxide nanoparticles for 3%, 5% and 7% concentrations. The properties of the obtained nanoparticles were investigated through XRD, FTIR, XPS, HRTEM–SAED, SEM–EDX and UV–visible spectroscopy techniques. The XRD pattern reveals all samples have tetragonal structures with high crystallinity. The Sn–O stretching vibration has been confirmed through FTIR spectra. The XPS results demonstrate that Sn0.93Ni0.07O2 nanoparticles have Sn3d, Ni2p and O1s oxidation states. EDX spectra contain Ni, Sn and O elements, which indicate the purity of the samples. UV–visible absorption spectrum shows decreases in optical energy bandgap with increases in nickel dopant concentration. The samples exhibit notable antibacterial activity against P. aeruginosa and S. aureus. Also, Sn0.93Ni0.07O2 nanoparticle has higher antifungal activity against A. niger than against C. albicans. Moreover, SnO2 nanoparticles have considerable antioxidant activity in DPPH scavenging compared to Sn0.93Ni0.07O2 nanoparticles. Furthermore, SnO2 nanoparticles have a better cytotoxic effect for L929 normal fibroblast cell lines with an LD50 value of 146.42 μg/mL. Additionally, the photocatalytic activity of SnO2 and Sn0.93Ni0.07O2 nanoparticles was done against methylene blue dye under direct sunlight irradiation. Overall, environmentally friendly synthetic pure and Ni‐doped SnO2 nanoparticles can be used in wastewater filter technologies as well as in medical aids due to their better cytotoxic, antioxidant and antimicrobial effects.

Effect of Different Doping Concentrations on the Properties of Fe2+:ZnSe and Fe2+, Cr2+:ZnSe Crystals Grown by the Chemical Vapor Transport Method.

The Fe2+:ZnSe crystal is an important material for 3-5 μm mid-infrared lasers. In this work, we have grown different doping concentrations of Fe2+:ZnSe and Fe2+, Cr2+:ZnSe by the chemical vapor transport method. The doped crystals have the same structure. The lattice constant increases slightly with a higher Fe2+ concentration, while the doped Cr2+ has a great influence on the lattice constant. Besides, with a higher Fe2+ concentration, the TO mode has no change and the LO mode presents a small blue shift. The doped ZnSe crystals all have a wide absorption peak in the range of 2.3-4.5 μm, and these absorption peaks widen with the increase of the Fe2+ doping concentration. Besides, in the range of 5-20 μm, the crystals have good transparency. The concentrations of 3, 2, and 1% Fe2+ samples are calculated to be 4.15 × 1019, 3.27 × 1019, and 3.02 × 1019 cm-3, respectively, and the Fe2+ concentration of the Fe2+, Cr2+:ZnSe sample is 3.71 × 1019 cm-3. The band gap decreases from 2.52 to 2.27 eV with a higher Fe2+ doping concentration. Therefore, we can modulate the absorption bandwidth and band gap by doping the ion concentration, which is more suitable for developing mid-infrared gain medium applications.

Controllable p-type doping and improved conductance of few-layer WSe2 via Lewis acid

Manipulation of the electronic properties of layered transition-metal dichalcogenides (TMDs) is of fundamental significance for a wide range of electronic and optoelectronic applications. Surface charge transfer doping is considered to be a powerful technique to regulate the carrier density of TMDs. Herein, the controllable p-type surface modification of few-layer WSe2by FeCl3Lewis acid with different doping concentrations have been achieved. Effective hole doping of WSe2has been demonstrated using Raman spectra and XPS. Transport properties indicated the p-type FeCl3surface functionalization significantly increased the hole concentration with 1.2 × 1013cm-2, resulting in 6 orders of magnitude improvement for the conductance of FeCl3-modified WSe2compared with pristine WSe2. This work provides a promising approach and facilitate the further advancement of TMDs in electronic and optoelectronic applications.

Experimental Investigation on Climate-Control Nano-Composite Polycarbonate Sheets Enhanced with TiO2, ZnO, and Zeolite Nanoparticles for Polyhouse Use

Abstract Optimal food production is achieved when crops receive the necessary nutrients, and the desired levels of temperature, humidity, solar radiation, and sufficient water. Climate Control Agriculture, or Controlled Environment Agriculture, utilizes a technology-based approach to grow plants in a controlled environment. This study focuses on the experimental investigation of polycarbonate sheets doped with TiO2, ZnO, and zeolite nanoparticles for potential use in polyhouse applications. The thermal performance of these synthesized sheets and standard polycarbonate sheets was tested in a laboratory setting. A specialized experimental setup, consisting of two cabinets, was designed and fabricated for this purpose. Ten synthesized sheets each with thicknesses of 50 µm and 70 µm, and two commercial sheets of 70 µm thickness were tested experimentally in the laboratory for their thermal performance. Results indicated that the doping concentration of 0.3% was the most effective, while 0.1% was the least effective. Among the three doping materials, TiO2-doped sheets demonstrated superior ultra-violate light absorption capacity due to their high refractive index and band gap energy, which enhances their ability to absorb and scatter ultra-violate light. . ZnO offered stronger UV protection than the remaining three materials. However, it has a lower refractive index than TiO2. Its overall thermal performance was lower than TiO2. The desired properties of nanocomposites for use in polyhouse applications such as thermal performance in the laboratory, UV protection, mechanical strength and durability, transparency, photostability, and safety were compared based on the experimental results and the data available in the literature and was concluded that polycarbonate doped with ZnO and TiO₂ nanoparticles were the most suitable.

Ultraviolet Laser Activation of Phosphorus‐Doped Polysilicon Layers for Crystalline Silicon Solar Cells

AbstractIn crystalline silicon photovoltaics (c‐Si PV), a pulsed laser can be used as a substitute for a high‐temperature furnace dopant diffusion/activation step. In contrast to furnace‐based activation, lasers can be used to achieve highly localized doping with controlled dopant concentrations, useful in advanced architectures such as the interdigitated back contact (IBC) solar cell. In this study, a pulsed ultraviolet (UV) laser is utilized for phosphorus dopant activation within a low‐pressure chemical vapor deposited (LPCVD) polycrystalline silicon (poly‐Si) passivated contact layer. The highest implied open‐circuit voltage iVoc values achieved using this approach reach 726 mV. However, this comes at the expense of high specific contact resistivities ρc, which is attributed to a lower dopant concentration across the poly‐Si(n+)/SiOx/c‐Si interface. Regardless, the optimum iVoc, ρc combination is measured at a laser fluence of 0.78 J cm−2 producing values of 712 mV and 89 mΩ‐cm2, respectively. These values are still compatible with high‐efficiency solar cell designs, underscoring the feasibility and effectiveness of this approach.

Predicting and Accelerating Nanomaterial Synthesis Using Machine Learning Featurization.

Materials synthesis optimization is constrained by serial feedback processes that rely on manual tools and intuition across multiple siloed modes of characterization. We automate and generalize feature extraction of reflection high-energy electron diffraction (RHEED) data with machine learning to establish quantitatively predictive relationships in small sets (∼10) of expert-labeled data, saving significant time on subsequently grown samples. These predictive relationships are evaluated in a representative material system (W1-xVxSe2 on c-plane sapphire (0001)) with two aims: 1) predicting grain alignment of the deposited film using pregrowth substrate data and 2) estimating vanadium dopant concentration using in situ RHEED as a proxy for ex situ methods (e.g., X-ray photoelectron spectroscopy). Both tasks are accomplished using the same materials-agnostic features, avoiding specific system retraining and leading to a potential 80% time saving over a 100-sample synthesis campaign. These predictions provide guidance to avoid doomed trials, reduce follow-on characterization, and improve control resolution for materials synthesis.

Synthesis and application of Ho³⁺ doped BaGd₂ZnO₅ nanophosphors for enhanced latent fingerprint development and poroscopy

In this study, Ho³⁺-doped BaGd₂ZnO₅ (1–11 mol%) nanophosphors (BGZO:Ho3+ NPs) were synthesized through combustion synthesis, utilizing Spirulina leaf extract as a natural green fuel. Luminescence studies revealed that the BGZO:Ho³⁺ phosphors exhibit a strong green emission primarily resulting from the 5S2→5I8 transition of Ho³⁺ ions. The optimal doping concentration was found to be 7 mol % Ho³⁺, which yielded the highest luminescence efficiency. Furthermore, the CIE chromaticity coordinates for BGZO:7Ho³⁺ were accurately determined to be (0.2595, 0.7290), with a color purity (CP) of 99.98 %. These results indicate the potential of this material for producing high-quality green emissions suitable for solid-state lighting and display applications. Optimized BGZO:Ho3+ NPs were utilized for latent fingerprints (LFPs) development via the powder dusting method. Under 365 nm UV light, the NPs effectively revealed Level I-III fingerprints (FPs) details, including ridge patterns, minutiae, and sweat pore features, on various substrates such as glass, plastic, and metal. The high luminescence of BGZO:Ho3+ NPs under UV illumination offers a sensitive and non-destructive method for enhancing FPs visibility, making it a promising tool for forensic applications. In addition, this study focuses on FPs poroscopy, examining the detailed pore structure of LFPs for forensic identification. Using advanced imaging techniques, we analyzed sweat pore distribution, size, and shape across various substrates and conditions. A detailed poroscopic analysis of LFPs, focusing on key parameters such as pore interspacing (165–332 μm), pore size (4140–9956 μm2), shapes (elliptical, rhomboid, triangular, square and rectangular) and pore angle (167°–179°). Further, a mathematical model was developed using Python-based software to enable precise and accurate analysis of FPs, enhancing clarity and identification accuracy, supporting the uniqueness of FPs beyond ridge patterns. The results demonstrate the potential of poroscopy for enhancing FPs analysis by offering an additional layer of precise biometric data.

Preparation and Properties of Fe-Based Double Perovskite Oxide as Cathode Material for Intermediate-Temperature Solid Oxide Fuel Cell

Double perovskite oxides with mixed ionic and electronic conductors (MIECs) have been widely investigated as cathode materials for solid oxide fuel cells (SOFCs). Classical Fe-based double perovskites, due to their inherent low electronic and oxygen ionic conductivity, usually exhibit poor electrocatalytic activity. The existence of various valence states of B-site ions modifies the material’s catalytic activity, indicating the possibility of the partial substitution of Fe by higher-valence ions. LaBaFe2−xMoxO5+δ (x = 0, 0.03, 0.05, 0.07, 0.1, LBFMx) is used as intermediate-temperature solid oxide fuel cell (IT-SOFC) cathode materials. At a doping concentration above 0.1, the Mo substitution enhanced the cell volume, and the lattice expansion caused the formation of the impurity phase, BaMoO4. Compared with the parent material, Mo doping can regulate the oxygen vacancy concentration and accelerate the oxygen reduction reaction process to improve the electrochemical performance, as well as having a suitable coefficient of thermal expansion and excellent electrode stability. LaBaFe1.9Mo0.1O5+δ is a promising cathode material for IT-SOFC, which shows an excellent electrochemical performance, with this being demonstrated by having the lowest polarization resistance value of 0.017 Ω·cm2 at 800 °C, and the peak power density (PPD) of anode-supported single-cell LBFM0.1|CGO|NiO+CGO reaching 599 mW·cm−2.

Design of Ga2O3 Trench Gate MOSFET Devices with Dielectric Pillars

Abstract In this study, a β-Ga2O3 U-groove gate metal-oxide-semiconductor field-effect transistor (UMOSFET) with a high breakdown voltage (BV) is proposed. Through TCAD simulation, both forward and reverse electrical characteristics are comprehensively investigated. The integration of traps within the current blocking layer (CBL) is suggested to enable effective current blocking. Furthermore, to optimize the BV, the introduction of oxide dielectric pillars on either side of the drift layer is implemented to enhance the potential distribution during breakdown. The forward and reverse electrical characteristics of the device at different temperatures are also investigated. Additionally, by conducting simulation optimizations of different doping concentrations in the drift layer, CBL layer thickness, and trap concentrations, notable achievements are realized, which include a high BV of 865.2 V, low threshold voltage of 2.587 V, and low specific ON-resistance of 19.2 mΩ·cm2. This study presents a novel structural design to foster the potential application and development of Ga2O3 electronic devices.

Pr3+ ions activated TiO2 nanoparticles as electron transport layer for copper based (CH3NH2)2CuBr4 perovskites solar cells

In emerging organic-inorganic perovskite solar cells (PSCs), the role of efficient electron transport layers (ETLs) is critical for electron transfer and hole blocking. TiO2 is one of the widely reported ETLs but limits the performance of the devices exhibiting restricted electron mobility and numerous defect states. The process of doping rare earth ions has been an effective approach in improving the electronic and optical properties of TiO2 for enhanced efficiency of PSCs. The present work studies the effect of praseodymium (Pr3+) doped TiO2 prepared via sol-gel technique as electron transport layers for lead-free perovskite solar cells. The X-ray diffraction (XRD) and diffuse reflectance spectroscopy (DRS) studies showed that the crystallite size and bandgap of the particles reduced as a function of Pr3+ doping concentration. The X-ray photoelectron spectroscopy (XPS) analysis of the samples inferred that Pr3+ ions majorly remained on the TiO2 surface. Copper-based (CH3NH2)2CuBr4 perovskites were synthesized by solution method as an active layer for the solar cells. XRD, FTIR (Fourier Transform Infrared Spectroscopy) and XPS analysis confirmed the formation of 2D-perovskite phase of the samples. The scanning electron microscopy (SEM) analysis of the perovskites revealed well crystalline orthorhombic structures. Current-voltage measurements were carried out to study better passivation properties with rare-earth doping of the ETLs and was found to be most enhanced for 0.07 Pr3+ concentration. Electro-chemical Impedance Spectroscopy (EIS) studies of the solar cells showed a reduced interface recombination and enhance charge transfer properties as a function of rare-earth dopant concentration. Further, the fabricated perovskite solar cells showcased better performance with xPr3+:TiO2 ETLs and the maximum efficiency of ∼1.25 % was obtained for TiO2: 0.07 Pr3+.

Comparative analysis of electronic and thermoelectric properties of strained and unstrained IrX3 (X=P, As) skutterudite materials

Abstract The electronic and thermoelectric properties of unfilled IrP3 and IrAs3 skutterudites materials under hydrostatic pressures are investigated using density functional theory (DFT) combined with semi-classical Boltzmann transport theory. Calculations of the elastic properties and phonon frequencies for both strained and unstrained materials demonstrate that they are mechanically and dynamically stable, with ductility varying based on the applied pressure. For pressures ranging from 0 to 30 GPa, the band structure calculations with the GGA+TB-mBJ approximation reveal that the band gap varies from 0.400 to 0.144 eV for IrP3 and from 0.341 to 0.515 eV for IrAs3. At 0 GPa, IrAs3 exhibits a direct band gap, whereas IrP3 has an indirect band gap. As pressure increases, IrAs3 undergoes a transition from a direct to an indirect band gap above 10 GPa, while IrP3 maintains its indirect band gap characteristic throughout the pressure range. 
The thermoelectric properties, at various pressures and temperatures between 300 and 1200 K, are also computed. These properties include the Seebeck coefficient, electrical conductivity, thermal conductivity (both electronic and lattice contributions), and relaxation time. The ideal conditions for efficient thermoelectric properties in IrAs3 are achieved at 30 GPa and 1200 K, with an optimal n-type doping concentration of 56×1019 cm-3, resulting in a ZT of 0.68. For IrP3, a ZT of approximately 0.46 is obtained at 600 K and 5 GPa, with a p-type doping concentration of 6.0×1018 cm-3.
The present study provides valuable insights into the behavior of skutterudite materials under strain, offering pathways for enhancing their performance in practical applications.

High-performance cold-source field-effect transistors based on Cd3C2/ boron phosphide heterojunction

To overcome the short-channel effect and large gate leakage current in the field-effect transistors (FETs), some cold-source materials have been suggested as alternative materials. We explore the performance of FET based on the cold-source material Cd3C2 using the ab initio quantum transport method. It is shown that the figure of merits (FOMs) of Cd3C2/ Boron phosphide (BP) FET satisfies the requirements of ITRS2028 HP for UL=2 and UL=3nm. The performance of Cd3C2/BP FET is improved when Cd3C2 is p-type doped. Doping causes a super-exponential decrease in carrier concentration, thus the cold-source FET based on Cd3C2/BP is formed. When the doping concentration reaches 10.0 × 1013cm−2, the device satisfies the requirements of ITRS2028 HP. More importantly, at the doping concentration of 10.0 × 1013cm−2 for UL=2 and 3 nm, the subthreshold swings are 52.32 and 56.84 mV/dec, which are lower than 60 mV/dec. This work proposes a new cold-source FET based on Cd3C2/BP, whose excellent performance can make it a competitive candidate in future electronic devices.

Self‐reduction triggered color tuning of Eu3+‐doped aluminosilicate glass for solid‐state white illumination

AbstractRare earth‐doped transparent glass, boasting high transmittance and excellent luminescent properties, holds great potential in the field of all‐inorganic solid‐state white illumination. Currently reported single‐structure solid‐state white lighting usually has the problems of low color rendering index (CRI) and high correlated color temperature (CCT) due to the lacking of red light emission. In this work, a novel single‐structure MgO–Al2O3–SiO2–Eu2O3 (MAS: Eu) glass with color tuning was prepared by the simple glass melting process. Interestingly, the prepared Eu3+‐doped aluminosilicate glass possessed a unique capability to achieve color emission under different excitation wavelengths. The reason for this was attributed to the good self‐reduction capability of the MAS glass, which effectively reduced Eu3+ to Eu2+ under an air atmosphere. Meanwhile, only by regulating the Eu3+ doping concentration, the MAS glass also achieved a tunable emission from blue to white to red light under 380 nm excitation. The acquisition of white light was realized through the multispectral emission of blue–green light emitted by Eu2+ and orange–red light emitted by Eu3+. Remarkably, the single‐structure MAS glass doped with 8 wt.% Eu3+ successfully achieved high‐quality white light and high thermal stability, exhibiting a high CRI of 86, a low CCT of 2761 K, good chromaticity parameters of (0.407 and 0.3192), and the emission intensity at 423 K remains above 86.35% that of room temperature. Meanwhile, the doped Eu3+ exceeded 12 wt.%, without any observable concentration quenching. Moreover, the MAS: Eu glass showed a high transmittance of 90 and a moderate thermal conductivity of 1.45 W/mK (epoxy resin ∼0.17 W/mK). These results would dramatically inspire the development of high‐quality solid‐state white lighting applications.