Base Collector Research Articles

Solar Chimney and Power Tower Techniques for Power Production in Nasiriya City

The solar chimney and power tower are two of modern promised energy which can develop bylow losses, simplicity and high power.In this paper, the solar chimney and fossil fuel power tower parameters are studied by usingtheoretical equations in computational fluid dynamics CFD that substituted in some computerprograms such as MATLAP and FLUENT codes with additional related expressions. Fivedifferent models are used in this paper (Chimney height is: 12, 15, 20, 25, and 35 meter),(Diameter of collector base is: 5, 8, 10, 15, and 20 meter). The effect of inlet collector height,collector absorbability, solar radiation, ambient temperature, solar collector thickness and solarcollector tilt angle are studied to find the other parameters and properties such as velocitydistribution, power and efficiency of system. The erecting of power turbine is predicted byfindings the velocity distribution between the base and chimney assembly. The numericalanalysis was presented by using GAMBIT and FLUENT 6.3 to predict that high velocity at theexpansion of chimney near the center of base – chimney bond position because of low density ofair as a result to solar radiation flux (and burned gases cover collector in case of using thechimney for combustion of gases in oil refineries).. This position is very suitable for promotingand building the power turbine. The maximum power accumulated from these techniques is morethan (6.7×105 Watt) where the velocity is (17.5 m/s). The study concluded that it is easy work toerect these chimney and power tower techniques closed to drilling and oil facilities in remoteareas. So, all factors were studied to coincide with previous papers in this field.

Improved Compact Modeling of SiGe HBT Linearity With MEXTRAM

We compare measured and simulated RF third-order distortion current, as well as the corresponding IP3, as a function of bias, for a SiGe heterojunction bipolar transistor (HBT), using MEXTRAM. The collector-base (CB) depletion capacitance model is identified to limit IP3 modeling accuracy near its peak. New CB capacitance modeling options are developed to significantly improve high-current IP3 modeling accuracy, particularly its peak behavior. Guidelines to simultaneous fitting of f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> , f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> , IP3, and C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BC</sub> are developed.

LO Chain (×12) Integrated 190-GHz Low-Power SiGe Receiver With 49-dB Conversion Gain and 171-mW DC Power Consumption

A 190-GHz mixer-based down-conversion receiver realized in a 130-nm SiGe BiCMOS technology featuring high-speed heterojunction bipolar transistors (HBTs) with ( $f_{\text {T}}$ , $f_{\text {max}}$ ) = (300, 500) GHz is presented. The core part of the receiver consists of a low-noise amplifier (LNA), an active tunable fundamental mixer, an intermediate frequency (IF) buffer amplifier (BA), and an active inverse balun. A wideband, high conversion gain (CG) local oscillator (LO) chain is integrated to make the receiver suitable for applications requiring tunable LO, which contains a multiplier with a multiplication factor of 12 ( $\times 12$ ) and a driver amplifier. To exploit the best possible performance with ultralow dc power consumption ( $P_{\text {dc}}$ ), the mixer and LNA transistors operate at forward-biased base–collector junction voltage ( $V_{\text {BC}}$ ). With a fixed IF frequency at 1 GHz, this receiver exhibits a peak CG of 49 dB with a 14-dB tuning range and a minimum single-sideband noise figure (NF) of 16.5 dB, consuming only 29-mW static dc power for the core part and 171 mW overall, including the LO chain. Within the CG tuning range, this receiver achieves a 6-dB RF bandwidth (BW) from 25 to 32 GHz. Compared with previously reported receivers at similar frequencies, the highest CG and the lowest $P_{\text {dc}}$ with highly competitive performance in terms of BW, CG tuning range, 1-dB output compression point, and NF have been achieved.

Optimum Utilisation of CuO Nanofluid in Flat Plate Solar Collector

The optimum utilisation of CuO-nanofluid in flat plate solar collector has been investigated under Malaysian climatic condition. To determine the optimum nanoparticle concentration required in the base fluid, a simulation was carried out using MATLAB program. From the simulation, it was found that, 0.5 vol.% of CuO nanoparticles in the base fluid yielded maximum collector efficiency. The test was conducted over six months following the ASHRAE standard with nanofluid in the flat plate collector to ascertain its efficiency. The maximum average solar radiation incident on the collector, collector outlet and ambient temperatures were observed about 1000 W/m2, 50 ºC and 38 ºC respectively. From the efficiency curve, the absorbed and removed energy parameters were found to be 0.501 and 24.23 respectively. At a mass flow rate of one litre per minute, the maximum average instantaneous efficiency was 51%. The result of experimental efficiency was compared with the result of simulation and the efficiency values were within 4% of each other. CuO nanofluid base collector increases the efficiency compared to water as the collector fluid. The experimental results revealed that the efficiency of FPSC with CuO nanofluid was 4.78% higher than water base collector at the same mass flow rate of 1 L/min. The uncertainty analysis of result has shown that instantaneous efficiency uncertainty was about 3.3%. The simulation result has indeed minimised number of experiments required to determine the optimum concentration of nanofluid for maximum efficiency.

Effect of Defects on the Performance of Si-Based GeSn/Ge Mid-Infrared Phototransistors

In this paper, we discuss the impact of interfaces and defects on the frequency performance of Si-based GeSn heterojunction phototransistors (HPTs) at room temperature. Furthermore, the effect of base-emitter (B-E) voltage on the spectral responsivity (SR) and detectivity (D*) has also been studied. The presented device consists of Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> Sn <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> alloy in the active layer to enhance the photodetection range. However, increasing Sn content in Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> Sn <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> causes a lattice mismatch between Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> Sn <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> and Ge virtual substrate (VS), which may increase defect density at the heterointerfaces. As a result, the diffusion length (L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</sub> ) and minority carrier lifetime (τ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</sub> ) may decrease, thereby, degrading the performance of the device. Three major noise components such as shot noise current components at the base-emitter (B-E) and base-collector (B-C) junctions and Johnson noise have been considered for the first time to calculate the detectivity and noise-equivalent-power (NEP) of the presented device. The calculated results show that the decrease in diffusion length does not cause a significant impact on the SR, D* and internal quantum efficiency (IQE), however, it significantly degraded the cut-off frequency (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> ), maximum frequency (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> ), and sensitivity (S) of the GeSn HPT at 300 K.

Effect of Franz–Keldysh absorption on the short optical pulse generation in Transistor Laser

In this work, the effect of Franz–Keldysh (FK) absorption on the short optical pulse generation in Transistor Laser (TL) is analyzed. Franz–Keldysh (F–K) Absorption coefficient is incorporated in the rate equations and solved numerically by fourth order Runge–Kutta (R–K) method. Short optical pulses are generated for various values of collector to base voltage. The output optical power is found to decrease with increasing reverse collector to base voltage. The magnitude of peak optical power and full width half maximum (FWHM) are predicted for various values of VCB. The collector base reverse bias voltage is varied from 0 V to 3 V. The peak optical pulse power is found to decrease with increasing reverse collector to base voltage. Full width half maximum is found to increase with increasing reverse collector to base voltage (VCB). The maximum peak optical power of 156.2 mW and minimum FWHM of 17.97 ps are predicted for the unbiased VCB at the base current amplitude of 128 mA. The optimum value of peak optical pulse power of 45.89 mW and full wave half maximum of 24.21 ps are obtained for the VCB value of 1.5 V at the base current amplitude of 96 mA.

Frequency increase of an InP‐based HBT using improved layout design and base‐collector undercut process

AbstractIn this article, an improved layout design and a base‐collector undercut etching process have been proposed and demonstrated for a high‐speed InP/InGaAs heterojunction bipolar transistor (HBT). The fabricated HBT using proposed methods has a smaller parasitic base‐collector (B‐C) area, resulting in reduced B‐C capacitance (CBC), a reduction of 36% compared to that in the conventional HBT. A current gain cutoff frequency (fT) and a maximum oscillation frequency (fmax) of the proposed HBT have been increased from 110 to 131 GHz and from 112 to 131 GHz due to the reduced CBC. These results clearly show the effectiveness of the proposed technique for the HBTs.

Design and Simulation of Improved SOI SiGe Hetero-Junction Bipolar Transistor Architecture with Strain Engineering

In order to improve the electrical and frequency characteristics of SiGe heterojunction bipolar transistors (HBTs), a novel structure of SOI SiGe heterojunction bipolar transistor is designed in this work. Compared with traditional SOI SiGe HBT, the proposed device structure has smaller window widths of emitter and collector areas. Under the act of additional uniaxial stress induced by Si0.85Ge0.15, all the collector region, base region and emitter region are strained, which is beneficial to improve the performance of SiGe HBTs. Employing the SILVACOⓇ TCAD tools, the numerical simulation results show that the maximum current gain βmax, the Earley voltage VA are achieved for 1062 and 186 V, respectively, the product of β and VA, i.e., β ×VA, is 1.975 × 105 V and, the peak cutoff frequency fT is 419 GHz when the Ge component in the base has configured to be a trapezoidal distribution. The proposed SOI SiGe HBT architecture has a 52.9% improvement in cutoff frequency fT compared to the conventional SOI SiGe HBTs.

Effect of Hole Extraction from the Base Region of a Silicon &lt;i&gt;p–n–p&lt;/i&gt; Transistor on its Reactive Impedance

Transistor structures are the basic elements of integrated circuitry and are often used to create not only transistors themselves, but also diodes, resistors, and capacitors. Determining the mechanism of the occurrence of inductive type impedance in semiconductor structures is an urgent task, the solution of which will create the prerequisites for the development of solid-state analogs of inductors. The purpose of the work is to establish the effect of extraction of non-equilibrium charge carriers from the base region on the reactive impedance of a bipolar p–n–p transistor.Using impedance spectroscopy in the frequency range 20 Hz–30 MHz, the structures based on p–n–p transistors KT814G manufactured by JSC “INTEGRAL” were studied. It is shown that in the transistor structures it is possible to observe the “effect of negative capacitance” (inductive type impedance). It is established that the most probable cause of the inductive type impedance is the accumulation of uncompensated charge of holes in the base, the value of inductive impedance is influenced by both the injection efficiency in the base–emitter junction and the extraction efficiency in the base–collector junction.The results can be applied in the elaboration of technologies for the formation of elements of silicon based integrated circuits with an impedance of inductive type.

Effects of buried oxide layer on working speed of SiGe heterojunction photo-transistor**Project supported by the National Natural Science Foundation of China (Grant Nos. 61604106, 61774012, and 61901010), the Beijing Future Chip Technology High Precision Innovation Center Research Fund, China (Grant No. KYJJ2016008), the Beijing Municipal Natural Science Foundation, China (Grant No. 4192014), and the Municipal Natural Science Foundation of Shangdong

The effects of buried oxide (BOX) layer on the capacitance of SiGe heterojunction photo-transistor (HPT), including the collector–substrate capacitance, the base–collector capacitance, and the base–emitter capacitance, are studied by using a silicon-on-insulator (SOI) substrate as compared with the devices on native Si substrates. By introducing the BOX layer into Si-based SiGe HPT, the maximum photo-characteristic frequency ft,opt of SOI-based SiGe HPT reaches up to 24.51 GHz, which is 1.5 times higher than the value obtained from Si-based SiGe HPT. In addition, the maximum optical cut-off frequency fβ,opt, namely its 3-dB bandwidth, reaches up to 1.13 GHz, improved by 1.18 times. However, with the increase of optical power or collector current, this improvement on the frequency characteristic from BOX layer becomes less dominant as confirmed by reducing the 3-dB bandwidth of SOI-based SiGe HPT which approaches to the 3-dB bandwidth of Si-based SiGe HPT at higher injection conditions.

Design and Development of InP DHBTs With High Breakdown Voltage for Ka-Band PA Applications

Type-I (straddled) InP DHBT devices have been fabricated to study the impact of different base-collector junction transition layer designs on the collector to emitter breakdown behavior, breakdown voltage, BVceo and the device output performance such as knee voltage, Vknee at high collector current densities, Jc. An abrupt breakdown behavior with BVceo of 11V and Vknee less than 1V at Jc>100kA/cm2 are achieved using an optimized base collector junction transition layer design. Using 2D numerical simulations, components of leakages dominating Iceo at low and high collector to emitter bias voltages are explained. It is further shown that the optimized device exhibits good RF and power performance achieving f $_{T}$ of 115GHz and f $_{max}$ of 150GHz at emitter width >1um. An MMIC power amplifier (PA) is also designed and fabricated using the optimized Type-I InP DHBT device. At 28GHz, good power performance is achieved with PAE of 54% and Psat of 26dBm. Thus, it is shown that InP DHBTs developed in this work are a good candidate for the next phase of 5G millimeter wave Ka-band power amplifier applications.

Didactic model of a simple driven microwave resonant T-L circuit for chaos, multistability and antimonotonicity

A simple driven bipolar junction transistor (BJT) based two-component circuit is presented, to be used as didactic tool by Lecturers, seeking to introduce some elements of complex dynamics to undergraduate and graduate students, using familiar electronic components to avoid the traditional black-box consideration of active elements. Although the effect of the base-emitter (BE) junction is practically suppressed in the model, chaotic phenomena are detected in the circuit at high frequencies (HF), due to both the reactant behavior of the second component, a coil, and to the birth of parasitic capacitances as well as to the effect of the weak nonlinearity from the base-collector (BC) junction of the BJT, which is otherwise always neglected to the favor of the predominant but now suppressed base-emitter one. The behavior of the circuit is analyzed in terms of stability, phase space, time series and bifurcation diagrams, Lyapunov exponents, as well as frequency spectra and Poincaré map section. We find that a limit cycle attractor widens to chaotic attractors through the splitting and the inverse splitting of periods known as antimonotonicity. Coexisting bifurcations confirm the existence of multi-stability behaviors, marked by the simultaneous apparition of different attractors (periodic and chaotic ones) for the same values of system parameters and different initial conditions. This contribution provides an enriching complement in the dynamics of simple chaotic circuits functioning at high frequencies. Experimental lab results are completed with PSpice simulations and theoretical ones.

Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base–Collector Voltage Drop at Low Current

This paper proposes an electrical method for estimation of the vertical junction temperature of silicon carbide bipolar junction transistors (SiC BJTs). This measurement method is based on measurement of the base-collector voltage (VBC) drop at a low current (VBC(low)) during the turn-off process. This voltage shows both good sensitivity and linearity with respect to temperature. The traditional temperature-sensitive electrical parameter VBE(low) (i.e., the base-emitter voltage at a low current) and an infrared camera are used to compare the characteristics of VBC(low). The results show that use of VBC(low) provides more accurate junction temperature and thermal resistance measurement results, which can then be used to extract the vertical junction temperature of the SiC BJT under test.

Controlling of Differential Resistance of &lt;i&gt;p–n&lt;/i&gt;-Junctions of Bipolar Transistor in Active Mode by Method of Impedance Spectroscopy

Controlling of parameters of manufactured transistors and interoperational controlling during their production are necessary conditions for production of competitive products of electronic industry. Traditionally for controlling of bipolar transistors the direct current measurements and registration of capacity-voltage characteristics are used. Carrying out measurements on alternating current in a wide interval of frequencies (20 Hz–30 MHz) will allow to obtain additional information on parameters of bipolar transistors. The purpose of the work is to show the possibilities of the method of impedance spectroscopy for controlling of differential resistance of p–n-junctions of the bipolar p–n–p-transistor in active mode.The KT814G p–n–p-transistor manufactured by JSC “INTEGRAL” was studied by the method of impedance spectroscopy. The values of differential electrical resistance and capacitance for base–emitter and base–collector p–n-junctions are defi at direct currents in base from 0.8 to 46 µA.The results of the work can be applied to elaboration of techniques of fi checking of discrete bipolar semiconductor devices.

Modeling tunnel currents in organic permeable-base transistors

Research in organic permeable base transistors (OPBTs) has led to a significant increase in their performance. However, despite this progress, understanding of the working mechanism of OPBTs is still limited. Although first numerical models of OPBTs are able to describe the switching mechanism of OPBTs correctly, they neglect currents injected at the base electrode, which leads to unrealistically low off-currents and high ON/OFF ratios.Here, a tunneling model is developed that is capable of describing injection of charges through a thin oxide layer formed around the base electrode of OPBTs. With the help of this injection model, the performance of the base–collector diode of OPBTs is discussed. In particular, the model is used to explain the reduction in backward currents due to an exposure to ambient air by an increase in the thickness of the oxide layer. Furthermore, the tunnel model is used to show that the reduction in backward currents of the base–collector diode leads to a decrease in off-currents of complete OPBTs, which in turn leads to an increase in their ON/OFF ratio.

Computational study of heat transfer in solar collectors with different radiative flux models

AbstractTwo‐dimensional steady incompressible laminar Newtonian viscous convection‐radiative heat transfer in a rectangular solar collector geometry is considered. The ANSYS FLUENT finite volume code (version 17.2) is used to simulate the thermo‐fluid characteristics. Extensive details of computational methodology are given to provide engineers with a framework for simulating radiative‐convection in enclosures. Mesh‐independence tests and validation are conducted. The influence of aspect ratio, Prandtl number ( Pr), Rayleigh number ( Ra) and radiative flux model on temperature, isotherms, velocity, and pressure is evaluated and visualized in colour plots. In addition, local convective heat flux is computed, and solutions are compared with the MAC solver for various buoyancy effects achieving excellent agreement. The P1 model is shown to better predict the actual influence of solar radiative flux on thermal fluid behaviour compared with the limited Rosseland model. With increasing Ra, the hot zone emanating from the base of the collector is found to penetrate deeper into the collector and rises symmetrically dividing into two vortex regions with very high buoyancy effect. With increasing Pr there is a progressive incursion of the hot zone at the solar collector base higher into the solar collector space and simultaneously a greater asymmetric behaviour of the dual isothermal zones.

Mechanism research of negative resistance oscillations characteristics of the silicon magnetic sensitive transistor with long base region

A silicon magnetic sensitive transistor (SMST) with the negative resistance oscillation phenomenon is presented in this paper. The SMST of cubic structure is composed of three regions and three electrodes (E, C and B). Two of the regions (collector region and base region) are designed on the top surface of the SMST, and the emitter region is designed at the bottom of the SMST. Using microelectromechanical system (MEMS) technology, the chip is fabricated on [Formula: see text] orientation p-type silicon (near intrinsic) wafer and packaged on printed circuit board (PCB). When collector voltage (V[Formula: see text]) and the base injecting current (I[Formula: see text]) are a certain value, the experimental results show that the collector current (I[Formula: see text]) attains negative resistance oscillation phenomenon and it is influenced by the external magnetic field (B) and temperature (T). Based on the effect of deep-level impurities on the carrier net recombination rate, theoretical analysis demonstrates that the deep-level impurities are the main factors of the appearance for oscillations phenomenon.

Experimental studies of collector-emitter voltage bias influence on the total ionization dose effects in NPN Si BJTs

The voltage VCE, bias influence studies on total ionizing dose (TID) in bipolar junction transistors (BJTs) were investigated. The BJTs were set at forward active mode of base-emitter voltage (VBE) swept from 0 to 1.0 V at different biased conditions of VCE, ranging from 1 V to 2 V at an interval of 0.25 V during 60Co γ irradiation. The damage mechanism of TID in BJTs at different VCE bias conditions were analysed by forward Gummel characteristics, forward current gain (βf), normalized excess base current (ΔIB/IBpre), normalized excess collector current (ΔIC/ICpre), normalized current gain (βfpost/βfpre), ideality factor (n) and power dissipation (Pd). The results show that the increments of base current (IB) and collector current (IC) are slightly different in various VCE bias conditions which also effects slight changes in their current gain (Δβf) degradation. The current gain degradation (βf) at high bias VCE degraded more slightly than low bias VCE. The ΔIB/IBpre, ΔIC/ICpre and βfpost/βfpre estimated shows similar trend of different VCE bias conditions resulting into varying distribution of performance degradation of the BJT. The ideality factors (n) for excess base current (ΔIB) were ∼2 for VBE from 0.35 V to 0.6 V at different VCE bias conditions. Thus, ideality factor (n) slightly increases as the VCE bias rises and decreases with the increased accumulated total dose level after the n peak value was obtained at TID equals to 130 krad (Si) for irradiated BJTs. Finally, the power dissipated (Pd) by BJTs were compared as VCE = 2 V > 1.75>1.5 V > 1.25>1 V and were noted to be more effective at VBE>0.6 V which also concur with temperature rise TR. The TR in BJTs resulted into self-heating effects.

Optimized Ge1−&lt;italic&gt;x&lt;/italic&gt;Sn&lt;italic&gt;x&lt;/italic&gt;/Ge Multiple-Quantum-Well Heterojunction Phototransistors for High-Performance SWIR Photodetection

We present the design and analysis of three-terminal Ge1− x Sn x /Ge multiple-quantum-well (MQW) heterojunction phototransistors (HPTs) for high-performance short-wave infrared (SWIR) photodetection. The active layer incorporates Ge1− x Sn x /Ge MQW structures between base–collector junctions pseudomorphically grown on Ge-on-Si substrates, thereby providing compatibility with CMOS platforms for low cost and scalable manufacturing technology. Introducing Sn into the MQW structures can effectively reduce the direct bandgap, thereby considerably extending the photodetection range in the SWIR spectral range with improved absorption efficiencies. In addition, the use of MQW structures as the active layer can enhance the absorption coefficient via quantum-confinement effects, thus further enhancing the photoresponses. We develop theoretical models to calculate the strained electronic band structures and optical absorption coefficients for the Ge1− x Sn x /Ge MQW structures, and the current gain is evaluated as a function of the barrier/well thicknesses, number of periods of the MQW structures, and doping concentrations of the layers for the HPT structures. The calculation results show that the absorption coefficient can be significantly enhanced by increasing the Sn content in the Ge1− x Sn x /Ge MQW active layer, and the current gain can be considerably enhanced by optimizing the HPT structures. With the enhanced absorption coefficient and current gain, high-responsivity photodetection can be achieved in the SWIR spectral range, thus making this device very promising for a wide range of SWIR photodetection applications.

Prediction of Hydrophobic Reagent for Flotation Process Using Molecular Modeling.

The interaction or nonbonded energies of base organic ions and water molecules during the flotation process of minerals have important meanings for organizing hydrophobic and stable collectors. Furthermore, the interaction, cross-term, and valence energies of optimized structures are important for understanding the properties and structures of selective collectors. The simulation of pure scheelite mineral (PSM) surfaces with four different negative ions, using an adsorption locator module is demonstrated. The interaction energies for base organic ions and water molecules were resolved and detected by shaping the best hydrophobic interaction and the most stable suspension over the PSM surface (112) and (101). The adsorption locator results for base organic ions and water molecules on PSM surfaces (112) and (101) using buffer width 0.5 Å and temperature range from 318.15 to 283.15 K confirmed the results obtain from Forcite calculations. The results have demonstrated that the possibilities of using consistent valence force field implemented by Forcite and adsorption locator modules in the selection of flotation reagents are cost saving. Furthermore, hydrophobicity of the main negative ions in soaps were solved by the simulation methods and results are in a good agreement with the experimental methods that proved that mustard soap is more selective on the mineral surfaces than sunflower soap when used as a collector. Increasing the molecular weight of negative ions increases the interaction energy between base collector ions and PSM surfaces (112) and (101) significantly.