Abstract
We compare measured and simulated RF third-order distortion current, as well as the corresponding IP3, as a function of bias, for a SiGe heterojunction bipolar transistor (HBT), using MEXTRAM. The collector-base (CB) depletion capacitance model is identified to limit IP3 modeling accuracy near its peak. New CB capacitance modeling options are developed to significantly improve high-current IP3 modeling accuracy, particularly its peak behavior. Guidelines to simultaneous fitting of f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> , f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> , IP3, and C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BC</sub> are developed.
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