Coercive Field Ec Research Articles

Enhanced functionalities of isovalently substituted 0.67(Bi1-xLaxFe0.97Ga0.03O3)-0.33(BaTiO3) relaxor piezoceramics synthesized via air quenching

The isovalently substituted lead-free binary solid solution, 0.67(Bi1-xLaxFe0.97Ga0.03O3)-0.33(BaTiO3) (BF-BT) (x ≤ 0.07), has been synthesized by solid state ceramic method via air quenching sintering. FTIR and XRD along with Rietveld structure refinement confirmed a pure perovskite phase with a pseudocubic structure (space group Pm3‾m) for developed compositions. SEM revealed a dense microstructure with fine grain size (<1.5 μm) and minimal porosity. XPS analysis reveals predominantly Bi+3 and Fe+3 states, along with oxygen vacancies (VO··). Ferroelectric studies demonstrated a maximum remanent polarization (Pr) of 12.3 μC/cm2 and coercive field EC of 30.95 kV/cm for La3+ concentration of x = 0.03. Overall decrement in Pr can be attributed to dipolar defect-induced random fields reducing the activation barrier for domain nucleation. Leakage current measurement reveals improved resistivity (∼108 Ω cm) up to an applied field of 30 kV/cm. Dielectric measurements unveiled two frequency-dependent anomalies in temperature dependence above room temperature, indicative of diffuse phase transitions. The Vogel-Fulcher model depicted an increasing freezing temperature (from 465 K for x = 0.01–551 K for x = 0.07) and decreasing activation energy (from ∼0.61 eV to 0.07 eV) with increasing La3+ concentration. The estimated diffuseness parameter around ∼2 suggested relaxor behavior. Doping with La resulted in increased dielectric permittivity at 10 kHz (from 4100 to 24066), showcasing the efficacy of site engineering in augmenting the functional properties of BF-BT for high-temperature dielectric and transducer applications.

Enhancing the Performance of PNN-PHT Perovskite Ferroelectric via Configurational Entropy Strategy: Component Design, Electric Properties, and Mechanism Analysis

The traditional approach to designing ferroelectrics through phase boundaries has limitations in regulating polarization configuration and achieving significant performance enhancements. In contrast, the concept of high-entropy materials has emerged as a promising strategy for designing new materials with enhanced properties. Herein, by incorporating the high configurational entropy (Sconfig) strategy, the investigation explored the influence of Sconfig on the electrical properties of PNN-PHT piezoceramics. The results demonstrated that high Sconfig values were highly beneficial in improving the piezoelectric properties and significantly influenced the microstructure and grain size. The increase in Sconfig value was found to be positively correlated with the Rayleigh coefficient (α), dielectric loss (tanδ), and frequency dispersion (γ), while inversely correlated with the coercive electric field (Ec). By exploring the mechanism via Raman and simulation analyses, it was discovered that high Sconfig induces enhanced disorder, increased lattice distortion, and sharp volume changes. This ultimately resulted in a richer phase structure, reducing the potential energy barriers and leading to a lower activation energy (Ea) required for polarization switching. This finding provides novel strategies and directions for the development of high-voltage and high-coercive-field materials, holding promise for designing piezoelectric devices with enhanced power density and precision.

Investigation of electrical, dielectric and multiferroic properties of 0.7Bi0.95Sm0.05Fe1-xGaxO3-0.3BaTiO3 composite ceramic system for high temperature piezoelectric applications

Lead-free composite ceramics, 0.7Bi0.95Sm0.05Fe1-xGaxO3-0.3BaTiO3 (BSFGx-BT), were made using a solid-state reaction method for x = 2.5, 5, 10, 15, and 20 %. We have investigated the effects of Samarium (Sm) and Gallium (Ga) co-doping on the crystal structure, topography, spectroscopy, electrical and multiferroic characteristics of the 0.7BiFeO3-0.3BaTiO3 (0.7BFO-0.3BTO) system for piezoelectric applications. The structural results indicate that the composite ceramics exhibited rhombohedra R and tetragonal T phases characterized by R3c and P4mm space groups, respectively which was also further confirmed by X-ray Rietveld refinement pattern analysis. In dielectric behaviour study high Curie temperature of 550 °C was obtained with high temperature stability. Furthermore, the study investigated the effects of grain and grain boundaries on capacitive and resistive properties. The ceramics displayed the characteristics of the negative temperature coefficient of resistance (NTCR). It was observed that as the Ga concentration increased, the grain resistance (Rb) also increased, reaching its maximum value for x =10 %. Additionally, at higher temperatures, this composite exhibited lower electrical resistivity. Importantly, the ceramics showed the co-existence of ferromagnetic and ferroelectric behaviour with the enhanced values of remanent magnetization (Mr)= 0.043 emu/g, coercivity (Hc) = 5730 Oe and remanent polarization (Pr) = 6.07 µC/cm2, coercive field (Ec) = 6.78 kV/cm for the composition x =10 %. These findings suggest that Sm & Ga incorporated 0.7BFO-0.3BTO composite ceramics can show promising high-temperature piezoelectric applications.

Switchable Photoelectric Response in High-Temperature Leadless Molecular Ferroelectric [C4N2H14][BiI5

Lead-free molecular ferroelectrics have garnered considerable attention for their promising potential, but such species with narrow band gap and sensitive photoelectric response are yet inadequate. Herein, we demonstrated the bulk ferroelectric photovoltaic effect in a novel lead-free molecular ferroelectric [C4N2H14][BiI5] with a Curie temperature (Tc) of 366 K and a narrow band gap (Eg) of 1.92 eV. The transformation of the crystal structure from the polar space group P21 to the nonpolar space group P21/m was elucidated using single-crystal X-ray diffraction. Room-temperature (RT) hysteresis loop reveals the intrinsic ferroelectricity of [C4N2H14][BiI5] with a relative small coercive field (Ec ∼ 0.27 kV/cm), saturation polarization (Ps ∼ 1.87 μC/cm2), and remanent polarization (Pr ∼ 1.61 μC/cm2). [C4N2H14][BiI5]-based solar device exhibits significant PV effects with a steady-state photocurrent (Jsc) of 3.54 μA/cm2 and a photovoltage (Voc) of 0.34 V under AM 1.5 G illumination, which can be significantly improved by adjusting the ferroelectric polarization, reaching a maximum Jsc of 140 μA/cm2 and Voc of 0.51 V. This work offers a promising avenue for lead-free molecular ferroelectric materials in the field of optoelectronic devices.

Textured Sr2Nb2O7 ceramics: Microstructure design, high temperature ferroelectric and piezoelectric performance

AbstractSr2Nb2O7 (SNO) ceramics are promising high‐temperature piezoelectric materials due to their high Curie temperature (TC), good thermal stability, and high electrical resistivity. However, SNO presents low piezoelectric activity (d33 &lt; 1 pC/N). Here, we successfully obtain textured SNO ceramics with an orientation factor of 0.86 by microstructure regulation. Saturated polarization‐electric loop was obtained in textured ceramic with remanent polarization Pr∼3.56 µC/cm2 and coercive field EC∼53.4 kV/cm. The piezoelectric coefficient d33 of the textured SNO ceramics is increased to 3.2 pC/N, with a high TC of 1342°C, while the low‐textured SNO ceramics exhibit no effective d33. Meanwhile, the piezoelectric coefficient d33 of textured SNO ceramics maintains consistency even at 1300°C, showing excellent thermal stability. The underlying mechanism driving this improvement is elucidated, emphasizing the facilitated domain‐wall motion enabled by the engineered microstructure. Furthermore, textured SNO ceramics exhibit high resistivity of 1.33 × 106 Ω⋅cm at 800°C. This study presents a simple and feasible microstructure engineering approach to enhance the piezoelectric properties of layer‐structured materials, offering valuable insights into the design and development of ceramics for diverse applications.

High-performance PSZT-PSMI-PSZS ceramics: Piezoelectric and ferroelectric insights for advanced applications

High-performance ferroelectric materials have garnered increased attention due to their exceptional dielectric, piezoelectric, and electrostrictive properties. A solid-state reaction method was used to prepare the perovskite Pb(1-x)Smx[(Zr0.52Ti0.48)0.9(Mo1/3In2/3)0.05(Zn1/3Sb2/3)0.05]O3 (where x = 0, 0.02, 0.04, 0.06, and 0.08) ceramics, abbreviated PSZT-PSMI-PSZS. Energy-dispersive X-ray spectroscopy (EDX) and Fourier-transform infrared (FT-IR) spectroscopy were employed to verify the elemental composition and molecular structure, respectively. The results showed good agreement between nominal and measured compositions, and indicated structural changes post-calcination, suggesting successful formation of the perovskite phase. Piezoelectric properties were evaluated, revealing the highest piezoelectric coefficient (d33 = 310 pC/N) at x = 0.02, attributed to optimal morphological features and the morphotropic phase boundary effect. This sample also demonstrated the highest electromechanical coupling factors (kp = 60 %, k31 = 35 %) and the largest impedance resonance frequency difference (Δf = 15.05 kHz). Ferroelectric testing indicated excellent ferroelectric characteristics, with the maximum remanent polarization (Pr = 17.71 μC/cm2) and saturation polarization (Ps = 22.75 μC/cm2) observed at x = 0.02, along with the lowest coercive field (Ec = 10.16 kV/cm). Additionally, this composition exhibited the highest unipolar strain (Smax = 0.17 %) and the inverse piezoelectric coefficient (d∗33 = 427.57 p.m./V). This comprehensive analysis emphasizes the potential of Sm-doped PZT-PMI-PZS ceramics for advanced piezoelectric and ferroelectric applications, particularly at a doping concentration of x = 0.02, where the materials exhibited excellent electrical and mechanical properties.

A Comprehensive Comparison of the Structural, Ferroelectric, Energy Storage, and Photocatalytic Properties of Chemical Composition-Tailored Perovskite Ceramics

This article reports on the structural, ferroelectric, energy density, and photocatalytic properties of (Pb0.50Ba0.35Ca0.15)(Fe0.25Nb0.25Ti0.50)O3 [PBCTO] and (Pb0.50Ba0.50)(Fe0.25Nb0.25Zr0.1Ti0.40)O3 [PBZTO] ceramics synthesized by the solid synthesis route. X-ray diffraction and Raman spectra confirmed peaks corresponding to perovskite crystalline structure with tetragonal phase for both PBCTO and PBZTO ceramics. Slim ferroelectric hysteresis was observed in polarization-electric field measurements. Remnant polarization (Pr), and coercive field (Ec) values are ∼3.63 μC cm−2, ∼25.4 kV cm−1, and ∼1.39 μC cm−2 and 17.9 kV cm−1 for PBCTO and PBZTO, respectively. Energy densities were obtained from ferroelectric hysteresis loops. For PBCTO ceramics, the largest unreleased energy density is 0.72 J cm−3 @ 200 kV cm−1; for PBZTO ceramics, the largest unreleased energy density is 0.60 J cm−3 @200 kV cm−1. Photocatalytic performance was studied on methylene blue (MB) and methyl orange (MO) dyes under visible irradiation. The degradation percentage of MB dye in the presence of PBCTO and PBZTO was found to be 56% and 98% in 80 min with irradiation. The degradation percentage of MO dye in the presence of PBCTO and PBZTO at their respective wavelength was 48% and 97% in 120 min with irradiation. These bulk ceramics under study have shown interesting multifunctional properties useful for various potential applications.

Ferroelectric AlBN films by molecular beam epitaxy

We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode, Nb2N. While a control AlN thin film exhibits standard capacitive behavior, distinct ferroelectric switching is observed in the AlBN films with increasing Boron mole fraction. The measured remnant polarization Pr∼15μC/cm2 and coercive field Ec∼ 1.45 MV/cm in these films are smaller than those recently reported on films deposited by sputtering, due to incomplete wake-up, limited by current leakage. Because AlBN preserves the ultrawide energy bandgap of AlN compared to other nitride hi-K dielectrics and ferroelectrics, and it can be epitaxially integrated with GaN and AlN semiconductors, its development will enable several opportunities for unique electronic, photonic, and memory devices.

Phase and defect structures of MnO2‐doped 75BiFeO3–25BaTiO3 ceramics and their effects on electrical properties

AbstractBismuth ferrite (BiFeO3)‐based high‐temperature piezoelectric ceramics have high Curie temperatures and excellent thermal stability; however, their applications are limited by inadequate piezoelectric performance due to large coercive fields and high leakage conduction. This study investigates the impact of MnO2 doping on the phase transition, defect structure, domain morphology, as well as the dielectric, ferroelectric, and electrical conduction behaviors of 75BiFeO3–25BaTiO3 ceramics sintered under an oxygen atmosphere. A structural transformation from distorted rhombohedral to pseudo‐cubic symmetry was observed with increasing MnO2 content, accompanied by domain fragmentation. MnO2 doping at an appropriate level inhibited defects such as and . Regarding electrical properties, the reduction in rhombohedral distortion and enhancement in the pseudo‐cubic phase after MnO2 doping resulted in decreased remanent polarization and electrostrain, which could potentially hinder piezoelectric response. However, appropriate MnO2 doping effectively reduced leakage conduction, significantly enhancing the poling efficiency of the ceramics. The maximum d33 value of 107 pC/N and kp of 0.36 were achieved at an MnO2 doping content of 0.1 wt.%. Excessive MnO2 addition may generate defect dipoles, as indicated by increased coercive field (Ec) and dielectric loss. The observed increase in high‐temperature resistivity with MnO2 content is primarily attributed to reduced grain size and increased concentration of mobile defects. This study provides valuable insights for further research on the application of 75BiFeO3–25BaTiO3 systems in high‐temperature piezoelectric devices.

Role of Annealing with Electric Field Toward Improvement of Ferroelectric and Electroactive Properties of PVDF Copolymer and Terpolymer Thin Films.

The present study elucidates the role of annealing with electric field on lamellar crystalline structure and molecular orientation of polymer chains in ferroelectric copolymer (P(VDF-TrFE)) and ferroelectric terpolymer (P(VDF-TrFE-CFE)) spin-coated thin films. The ferroelectric polymer thin films annealed under an electric field support the growth of nanostructure with an "edge-on" lamellar crystalline structure having in-plane molecular chain orientation. The poled P(VDF-TrFE) thin films have higher remnant polarization (Pr) ≈6.2µCcm-2 and saturation polarization (Ps) ≈8.2µCcm-2 at an applied electric field of 250 MV/m compared to unpoled thin films having Pr ≈4.7 and Ps ≈6.2µCcm-2. Also, poled P(VDF-TrFE) thin films show lower coercive field (Ec) ≈94 MV/m compared to an unpoled thin film having Ec ≈105 MV/m. Similarly, poled PVDF-TrFE-CFE thin film shows better ferroelectric properties having Pr ≈0.4 and Ps ≈5.7µCcm-2 at an applied electric field of 200 MVm-1 compared to unpoled thin films having Pr ≈0.4 and Ps ≈4.1µCcm-2. The storage energy efficiency of unpoled and poled P(VDF-TrFE-CFE) thin films is measured to be ≈75% and 80%. Annealing of ferroelectric P(VDF-TrFE) polymer thin films under an electric field demonstrates improved ferroelectric and electroactive properties.

0.98(K0.5Na0.5)NbO3–0.02(Bi0.5Na0.5)(Zr0.85Sn0.15)O3 Single Crystals Grown by the Seed-Free Solid-State Crystal Growth Method and Their Characterization

(K0.5Na0.5)NbO3-based single crystals are of interest as high-performance lead-free piezoelectric materials, but conventional crystal growth methods have some disadvantages such as the requirement for expensive Pt crucibles and difficulty in controlling the composition of the crystals. Recently, (K0.5Na0.5)NbO3-based single crystals have been grown by the seed-free solid-state crystal growth method, which can avoid these problems. In the present work, 0.98(K0.5Na0.5)NbO3–0.02(Bi0.5Na0.5)(Zr0.85Sn0.15)O3 single crystals were grown by the seed-free solid-state crystal growth method. Sintering aids of 0.15 mol% Li2CO3 and 0.15 mol% Bi2O3 were added to promote single crystal growth. Pellets were sintered at 1150 °C for 15–50 h. Single crystals started to appear from 20 h. The single crystals grown for 50 h were studied in detail. Single crystal microstructure was studied by scanning electron microscopy of the as-grown surface and cross-section of the sample and revealed porosity in the crystals. Electron probe microanalysis indicated a slight reduction in K and Na content of a single crystal as compared to the nominal composition. X-ray diffraction shows that the single crystals contain mixed orthorhombic and tetragonal phases at room temperature. Raman scattering and impedance spectroscopy at different temperatures observed rhombohedral–orthorhombic, orthorhombic–tetragonal and tetragonal–cubic phase transitions. Polarization–electric field (P–E) hysteresis loops show that the single crystal is a normal ferroelectric material with a remanent polarization (Pr) of 18.5 μC/cm2 and a coercive electrical field (Ec) of 10.7 kV/cm. A single crystal presents d33 = 362 pC/N as measured by a d33 meter. Such a single crystal with a large d33 and high Curie temperature (~370 °C) can be a promising candidate for piezoelectric devices.

Computational Monte Carlo analysis of dielectric behavior in hexagonal boron nitride nanolattice

This study utilizes Monte Carlo simulations based on the Metropolis algorithm to delve into the dielectric properties of a hexagonal boron nitride nanolattice with mixed spins S-1 and σ-7/2. Initially it displays the phase diagram of the structure. Then, it examines the impact of the coupling interaction Jsσ, the external electric field Ez and the crystal field D on the system's polarization, dielectric susceptibility and the blocking temperature TB. Furthermore, the research explores the influence of Jσ, Ez, D and T on the hysteresis cycles and the coercive electric field Ec. The results reveal the distinguished dielectric properties of the hexagonal boron nitride nanolattice, which could be advantageous for a variety of nano-technological applications across flexible electronics, energy storage, nanophotonics, quantum computing, spintronics and sensing technologies.

Achieving high electromechanical response in lead-free BNT-BT ceramics through synergistic A/B-site doping

Lead-free Bi0.5Na0.5TiO3-based ceramics show great promise for achieving high unipolar strain. However, it remains challenging to implement an effective strategy for microstructural designs with high electromechanical response. Herein, a direct composition-engineering method based on A/B-sites doping is adopted to introduce a synergistic effect of reduced oxygen vacancies, lattice distortion, ferroelectric-to-relaxor phase transition, and nano-sized domains, resulting in a high piezoelectric strain coefficient d*33 of 857 pm/V at a small electric field of 4 kV/mm. Furthermore, a large room-temperature maximum polarization (Pm) of 72.4 μC/cm2 was observed at high electric field. A phase transition from coexisting rhombohedral–tetragonal to pseudocubic was engineered by finely tuning the contents of NaTaO3, leading to a decrease in both remnant polarization (Pr) and coercive field (Ec). The phase diagram of 1-x[0.935(Bi0.5Na0.5TiO3)-0.065(BaTi0.99Nb0.01O3)]-x(NaTaO3) (x = 0–0.04) is proposed, providing a roadmap for engineering high-performance piezoelectric ceramics with enhanced electrostrain responses, which may find potential applications as piezoelectric actuators.

Domain Switching Characteristics in Ga-Doped HfO2 Ferroelectric Thin Films with Low Coercive Field.

The gallium-doped hafnium oxide (Ga-HfO2) films with different Ga doping concentrations were prepared by adjusting the HfO2/Ga2O3 atomic layer deposition cycle ratio for high-speed and low-voltage operation in HfO2-based ferroelectric memory. The Ga-HfO2 ferroelectric films reveal a finely modulated coercive field (Ec) from 1.1 (HfO2/Ga2O3 = 32:1) to an exceptionally low 0.6 MV/cm (HfO2/Ga2O3 = 11:1). This modulation arises from the competition between domain nucleation and propagation speed during polarization switching, influenced by the intrinsic domain density and phase dispersion in the film with specific Ga doping concentrations. Higher Ec samples exhibit a nucleation-dominant switching mechanism, while lower Ec samples undergo a transition from a nucleation-dominant to a propagation-dominant reversal mechanism as the electric field increases. This work introduces Ga as a viable dopant for low Ec and offers insights into material design strategies for HfO2-based ferroelectric memory applications.

Performance investigation of ferroelectric L-shaped tunnel FET with suppressed corner tunneling for low power applications

In this work, a ferroelectric L-shaped tunnel FET (FE-LSTFET) is introduced to offer improvement in various DC and analog/high-frequency parameters. In this design, the incorporated FE layer enhances the vertical electric field at the source-channel interface, which improves the tunneling rate of charge carriers during the ON-state. The effect of negative capacitance (NC) and L-shaped N+ pocket causes dominance of vertical tunneling over corner tunneling (mainly at low gate voltages), which in turn reduces the transition voltage and current from 0.85 to 0.25 V and 1.2 × 10-8 to 5.67 × 10-11 A/µm respectively, thereby improving parameters such as ION, IOFF, and SSavg. Further, optimization of the thickness and doping concentration helps to keep the N+ pocket in fully depleted mode and consequently, ION/IOFF is increased from 0.3 × 1012 to 1.2 × 1014 and SSavg is reduced from 52 to 30 mV/decade. Subsequently, NC parameters such as remanent polarization (Pr) and coercive electric field (Ec) are optimized to increase the memory window, which further improves the read margin of FE-LSTFET as a memory device. Furthermore, TCAD-based simulation results show that optimizing the FE thickness improves ION and IOFF in the order of ∼ 1 and ∼ 2, respectively compared to those of C-LSTFET. With an optimum drain-overlap length, IOFF is shown to reduce from 6.6 × 10-17 to 5.43 × 10-19 A/µm due to a reduction in the SRH generation rate of the charge carriers. Despite the degradation in Cgg due to drain-overlap by the stack of FE and SiO2 layers, a significant increase in e-BTBT helps in achieving a transconductance of 2.48 × 10-4 S/µm, thus leading to a large cut-off frequency of 34.12 GHz. Next, analysis of the FE-LSTFET-based inverter shows significant improvements in several parameters including propagation delay and full swing. Moreover, FE-LSTFET shows more reluctance to self-heating effects than C-LSTFET as ION/IOFF is increased by an order of ∼ 3 at 500 K. Lastly, the performance of FE-LSTFET is benchmarked with existing TFET designs indicating that FE-LSTFET is suitable as a high-speed and low-power memory device.

Evidence of self-biased magnetoelectric coupling in eco-friendly (Na0.41K0.09Bi0.5TiO3-Ba0.85Ca0.15Zr0.1Ti0.9O3)-(CoFe2O4) particulate composites

The magnetoelectric (ME) properties of eco-friendly 1-x(0.94Na0.41K0.09Bi0.5TiO3-0.06Ba0.85Ca0.15Zr0.1Ti0.9O3)-x (CoFe2O4) (NKBCZT-CFO) with x = 0, 0.1, 0.2, 0.3 and 0.4 particulate composites were investigated. The X-ray diffraction studies provided evidence for the simultaneous existence of constituent phases (ferroelectric and ferromagnetic) in the composite. The structural and surface morphology analysis of the composite affirmed the homogeneous and densely packed distribution of CFO grains within the NKBCZT matrix. The composite's multiferroic behavior at room temperature was confirmed through the characterization of P vs E and M vs H hysteresis loops. The observed values of remnant polarization (Pr) and coercive field (Ec) are 26.7 μC/cm2 and 35.5 kV/cm, respectively, for 10 mol% of CFO. The increase in CFO content resulted in a decrease in the ferroelectric properties, possibly due to the conductive behaviour exhibited by CFO, and correlated with leakage current measurement. For the composite containing 40 mol% of CFO, the estimated values of remanent (Mr), saturation (Ms) magnetization, coercive field (Hc), and magnetic moment (µB) are 2.35 emu/g, 21.85 emu/g, 104.2 Oe, and 0.86 µB, respectively. The non-Debye type dielectric relaxation processes have been observed in the composites, and the electron hopping mechanism resulted in a higher dielectric constant (εʹ). Enhancement in relaxor nature had been observed through Vogel-Fulcher analysis with CFO content. The evidence of ME coupling was revealed through the direct ME voltage coefficient (αME) and magnetocapacitance (MC) measurement. The observed maximum value of MC measured at 1 kHz for the 20 mol% CFO is ∼5.6 %. Self-biased ME coupling (non-zero αME at HDC = 0 Oe) was observed in 20 and 30 mol% of CFO composite. The highest measured value of αME for 20 and 30 mol% CFO is 3.63 mV/cm.Oe and 4.09 mV/cm.Oe at HDC = 0 Oe respectively. The strong ME interaction and significant value of self-biased ME αME suggest that these composites can be explored for magnetic sensor and ME memory device applications.

Fluorite-structured antiferroelectric hafnium-zirconium oxide for emerging nonvolatile memory and neuromorphic-computing applications

The rapid progress of the internet of things, cloud computing, and artificial intelligence has increased demand for high-performance computing. This demand has led to a focused exploration of novel nonvolatile memory (NVM) and brain-inspired neuromorphic-computing electronics, with research efforts directed at identifying materials compatible with complementary metal-oxide-semiconductor technology. Exploring fluorite-structured hafnium-zirconium oxide (HZO) mixed oxides has revealed promising ferroelectric (FE) and memristor characteristics, suggesting potential applications in emerging technologies. However, certain intrinsic properties of HZO-based FEs, such as high coercive fields (Ec) and polarization metastability, may pose challenges for commercial viability. Recent investigations of fluorite-structured HZO-based antiferroelectrics (AFEs) have highlighted their advantages, including lower energetic barriers, higher switching speeds, and a uniform phase distribution. These inherent benefits position fluorite-structured HZO-based AFEs as potential candidates within the NVM landscape. Furthermore, the accumulated polarization and spontaneous depolarization characteristics of fluorite-structured HZO-based AFEs make them worthy of potential integration into neuromorphic-computing because they resemble certain aspects of neuron behavior. Despite these positive aspects, a more thorough exploration and consideration are needed to address existing challenges. This review aims to present fluorite-structured HZO-based AFE materials and highlight the current challenges, possible applications, and future opportunities and can act as an update for recent developments in these intriguing materials and provide guidance for future researchers in the optimization and design of HZO-based AFE materials and devices for emerging NVM and neuromorphic-computing applications.

Interface engineering for facile switching of bulk-strong polarization in Si-compatible vertical superlattices

Ferroelectric thin films incorporating different compositional layers have emerged as a promising approach for enhancing properties and performance of electronic devices. In recent years, superlattices utilizing various interactions between their constituent layers have been used to reveal unusual properties, such as improper ferroelectricity, charged domain walls, and negative capacitance in conventional ferroelectrics. Herein, we report a symmetry scheme based on the interface engineering in which the inherent cell-doubling symmetry allowed atomic distortions (phonons) in any vertically aligned superlattice activate novel interface couplings among atomic distortions of different symmetries and fundamentally improve the ferroelectric properties. In a materialized case, the ionic size difference between Hf4+ and Ce4+ in the HfO2/CeO2 (HCO) ferroelectric/paraelectric superlattice leads to these couplings. These couplings mitigate the phase boundary between polar and non-polar phases, and facilitate polarization switching with a remarkably low coercive field (Ec\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${E}_{c}$$\\end{document}) while preserving the original magnitude of the bulk HfO2 polarization and its scale-free ferroelectric characteristics. We show that the cell-doubled distortions present in any vertical superlattice have unique implications for designing low-voltage ferroelectric switching while retaining bulk-strong charge storing capacities in Si-compatible memory candidates.

Ferroelectric Hysteresis Measurement in the Lithium Niobate‐Lithium Tantalate Single‐Crystalline Family: Prospects for Lithium Niobate‐Tantalate

Poling and structuring of ferroelectric domains form the basis for developing prospective applications using materials from the lithium‐niobate (LN) family. Applications range from second harmonic generation to electro‐optic modulators or surface acoustic wave devices. In the work presented here, hysteresis measurements are used as a standard method to quantitatively determine the poling properties of these ferroelectrics, including their spontaneous polarization Ps as well as their forward and reverse coercive fields Ec,+ and Ec,−. Systematic measurements that depend on parameters such as the ramp rate R of the applied poling voltage and the waiting time twait between domain inversions are investigated and compared between the congruent variants of LN, lithium tantalate (LT), their magnesium‐doped analogues, and stoichiometric LN. For bulk magnesium‐doped LN, for example, it is found that the resulting coercive field strongly depends on the speed of the voltage ramp, with values ranging from 11 to 21 kV mm−1. These investigations are used as fundamental input for poling ferroelectric lithium niobate‐tantalate solids (LNT), a system that offers a high potential for tuning the material parameters beyond what is possible for LN or LT.

Carrier Transport Switching of Ferroelectric BTBT Derivative.

Alkylamide-substituted [1]benzothieno[3,2-b][1]benzothiophene (BTBT) derivative of BTBT-NHCOC14H29 (1), which has ferroelectric N-H···O= hydrogen-bonding network of alkylamide group and two-dimensional (2D) electric structure of BTBT π-cores, was prepared to design the external electric field-responsive organic semiconductors. The short-chain derivative of BTBT-NHCOC3H7 (1') revealed the coexistence of a 2D electronic band structure based on the herringbone BTBT arrangement and the one-dimensional (1D) hydrogen-bonding chain. 1 formed a smectic E (SmE) liquid crystal phase above 412 K and showed ferroelectric hysteresis in the electric field-polarization (P-E) curves at 403-433 K. The remanent polarization (Pr) and coercive electric field (Ec) of 1 at 408 K, 0.1 Hz were 24.0 μC cm-2 and 5.54 V μm-1, respectively. By thermal annealing of thin-film 1 at 443 K, the molecular assembly structure of 1 changed from a monolayer to a bilayer structure with high crystallinity, resulting in conducting layers of BTBT parallel to the substrate surface. The organic field-effect transistor (OFET) device with thermally annealed thin-film 1 showed p-type semiconducting behavior with the hole mobility of 1.0 × 10-3 cm2 V-1 s-1. Furthermore, device 1 showed switching behavior of semiconducting properties by electric field poling and thermal annealing cycle. The electric field response of ferroelectrics modulated the molecular orientation and conduction properties of organic semiconductors, resulting in external electric field control of carrier transport properties.