The authors achieved oriented growth of vanadium dioxide (VO2) films on CoCrTa metal template grown on an Si substrate. Low-temperature (∼250 °C) deposition of VO2 films using inductively coupled-plasma-assisted sputtering technique realized an abrupt interface between VO2 and CoCrTa layers, suppressing the oxidation and diffusion of metal components. The films revealed a metal–insulator transition with resistance change of over 2 orders of magnitude. The CoCrTa film, in which Co hexagonal crystalline grains with c-axis orientation were surrounded by segregated Cr and Ta, serves for the oriented growth of VO2 crystalline film, enabling higher orders of transition in resistance and low voltage switching, even for the vertical (out-of-plane) direction.
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