Abstract
Two new sputter-deposition techniques, low voltage sputtering (LVS) and kinetic energy controlled particle deposition (KECD), are proposed to obtain a thin film with the desired microstructure. The LVS, RF–DC coupled magnetron sputtering with RF frequency above 30 MHz, is useful for sputtering at a sputtering voltage below 100 V and has a reasonable deposition rate. Indium tin oxide (ITO), Ti and CoCrTa films were deposited by using the LVS. Compared with conventional sputtering, LVS is effective in reducing high-energy particle bombardment of film surfaces during sputtering, which results in the formation of films with much smoother surfaces, although crystallization in the film is suppressed. On the other hand, KECD can control the kinetic energy and incidence angles of the depositing particles on the substrate. With KECD, it was confirmed that crystal growth is suppressed as the kinetic energy decreases in ITO film and the crystal orientation of Ti film depends remarkably on the kinetic energy of the deposition particles. Films with extremely smooth surface are obtained by KECD.
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