The study of closure domain structure dynamics at the end of magnetic bistable glass-coated microwire is presented. The method in which critical parameters of the so-called three-level rectangular field pulse are measured is used. It is shown that dependences measured using three-level field pulses cannot be satisfactorily interpreted by the model in which application of a rectangular field pulse causes the release of a single domain wall from a potential well. A new model based on the simplest possible closure domain structures at the microwire end is proposed. In the framework of this model the application of a non-zero first-level field results in changes in domain wall parameters (inertial mass and mobility) which have opposite effects on the prolonging/shortening of critical field pulse width and do not provide satisfactory explanation of experimental observations. Shortening of the path which the wall has to move along to become free can result from the wall lengthening caused by application of the non-zero first-level field. This effect combined with position-independent force acting on the wall can explain the observed behaviour. Modelling of this process is also presented and supports this interpretation.
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