Event Abstract Back to Event Highly Matched TΩ Pseudo-resistors for Multi-channel Neural Signal Recording Applications Vijay Viswam1*, Yihui Chen2, Raziyeh Bounik2, Amir Shadmani1, Jelena Dragas2, Jan Müller2 and Andreas Hierlemann2 1 ETH Zürich, Department of Biosystems Science and Engineering, Switzerland 2 ETH Zurich, Department of Biosystems Science and Engineering, Switzerland Motivation To reduce drift and offset of electrodes, neural amplifiers usually employ high pass filters with very low corner frequencies (e.g., fHPF<10Hz). This approach requires huge on-chip resistances (~T½). To keep the silicon area small, "pseudo-resistors" (MOS transistors biased in the weak inversion region) are frequently used [1], but their resistance may considerably vary due to processing and fabrication spread, temperature fluctuations, and even different locations on the same chip may feature different properties. Here, specific new pseudo-resistor structures have been devised to achieve small fHPF variations. Material and Methods The new pseudo-resistors were implemented in a CMOS high-density MEA system incorporating 2048 readout channels [2]. Two different kinds of pseudo-resistor topologies were devised. For the 1st stage, open-loop amplifiers were used, while, for the 2nd stage closed-loop amplifiers were implemented. Aided by the current mirrors and level shifters, the first-order dependence of the overdrive voltages of the transistors inside RPR1 and RPR2 on their threshold voltages was cancelled out. Thus, RPR1 and RPR2 variations were substantially reduced, which lead to small fHPF variations. A wide range of resistances could also be realized by changing the bias currents, which could be digitally tuned with 7-bit current DACs implemented on-chip. Results High pass filter corner frequency (fHPF) of the the neural amplifiers tuned by pseudo-resistors were measured. The uniformity of fHPF showed the inter-channel matching of pseudo resistors across 2048 channels in the high and low frequency range. Conclusions Current-biased pseudo-resistors for neural signal recording applications are introduced in this work. The two new structures enable to realize very large resistances while keeping the silicon area small. Results on the transfer function of the neural amplifiers and the matching of the pseudo-resistors have been shown in this paper. The circuits were fabricated in 180nm 6M1P CMOS technology.