Close-spaced Sublimation Research Articles

Putting High-Index Cu on the Map for High-Yield, Dry-Transferred CVD Graphene.

Reliable, clean transfer and interfacing of 2D material layers are technologically as important as their growth. Bringing both together remains a challenge due to the vast, interconnected parameter space. We introduce a fast-screening descriptor approach to demonstrate holistic data-driven optimization across the entirety of process steps for the graphene-Cu model system. We map the crystallographic dependences of graphene chemical vapor deposition, interfacial Cu oxidation to decouple graphene, and its dry delamination across inverse pole figures. Their overlay enables us to identify hitherto unexplored (168) higher index Cu orientations as overall optimal orientations. We show the effective preparation of such Cu orientations via epitaxial close-space sublimation and achieve mechanical transfer with a very high yield (>95%) and quality of graphene domains, with room-temperature electron mobilities in the range of 40000 cm2/(V s). Our approach is readily adaptable to other descriptors and 2D material systems, and we discuss the opportunities of such a holistic optimization.

How to Achieve Efficiencies beyond 22.1% for CdTe-Based Thin-Film Solar Cells

This review paper summarises the key issues of CdTe and CdS/CdTe solar cells as observed over the past four decades, and focuses on two growth techniques, electrodeposition (ED) and closed space sublimation (CSS), which have successfully passed through the commercialisation process. Comprehensive experience in electrical contacts to CdTe, surfaces & interfaces, electroplated CdTe and solar cell development work led to the design and experimentally test grading of band gap multilayer solar cells, which has been applied to the CdS/CdTe structure. This paper presents the consistent and reproducible results learned through electroplated CdTe and devices, and suggestions are made for achieving or surpassing the record efficiency of 22.1% using the CSS material growth technique.

Exploring the effect of oxygen environment on the Mo/CdTe/CdSe solar cell substrate configuration

Incorporating Se element into Cadmium telluride (CdTe)-based superstrate configuration solar cells have advanced impressively. However, molybdenum (Mo)/CdTe/CdSe substrate configuration devices remain relatively unexplored, and Mo foil oxidation behavior during the fabrication process is kept in the dark. This work investigates a fresh CdTe/CdSe substrate configuration solar cell using Mo substrates. Mo/CdTe/CdSe/ZnO/AZO/ITO solar cells have been fabricated, CdTe absorber layer was obtained by closed space sublimation (CSS) under ∼2000 pa pressure in varying Ar/O2 flu ratio. The champion device had an efficiency of 3.87% with unintentional Cu-doping and back contact. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-Ray spectroscopy (EDS) were applied to study the properties of CdTe films. Before CdTe deposition, molybdenum oxide (MoOx) was generated while heating the Mo substrate in an oxygen-containing environment. This buffer layer plays a pivotal role in blocking non-Ohmic back contact analyzed by current-voltage-temperature (J-V-T) measurements. Molybdenum oxidation states were extensively studied to build the relationship with a solar cell device. Our findings indicated that different oxygen partial pressure had less relevance with the CdTe surface chemical environment but was incredibly relevant for Mo metal foil oxidation states.

Copper-related defects in ZnTe thin films grown by the close space sublimation method

Low-temperature photoluminescence (PL) is used to study defects evolution via immersion technique and annealing in vacuum of ZnTe thin films. In this paper we studied how copper doping from solutions of different molar concentrations affects PL of ZnTe thin films grown by close space sublimation (CSS) method. Undoped ZnTe thin films showed PL emission in the (520-680) nm wavelength region. The incorporation of copper in ZnTe produce a number of broad emission bands that correspond to an electron transition from the conduction band to spin-orbit states of the localized level of Cu2+ ions. All the studied samples had variable concentrations of oxygen and the possibility of the formation of auxiliary oxides is discussed.

The effect of Te-doping and heat treatment on the structural properties of CdTe absorber layer for CdS/CdTe solar cell

Te rich CdTe thin films for absorber layer in CdS/CdTe solar cell were fabricated by the closed space sublimation method. Te enriched CdTe source materials with different Te rich contents were prepared before the deposition process of thin film. The properties of Te rich CdTe thin film were studied on the basis of the theoretical consideration of stoichiometric defect and self-doping. Here, we have considered the structural properties of CdTe with Te rich contents of 0, 1, 3, 5, 7, 10wt% by using scanning electron microscopy and X-ray diffraction. XRD measurements revealed that CdTe thin film had the largest lattice constant and the best crystallinity with less defects and stress at doping condition of 5%. Annealing in air represented more preferential orientation in (111) direction than the heat treatment in vacuum. We have analyzed the influence of Te doping and heat treatment on the structure and properties of CdTe:Te thin film to confirm more reasonable Te rich content and annealing atmosphere for CdTe thin film. Finally, we have determined Te rich content of the CdTe:Te thin film, 5%.

Performance optimization of CZT thick films by CdTe buffer layers for solar-blind ultraviolet photoelectric detectors

CdZnTe (CZT) thick films with CdTe buffer layers (CZT/CdTe) were studied for high-performance ultraviolet photoelectric detector. CZT thick films were prepared on AlN/Si substrates via close-spaced sublimation (CSS) and CdTe buffer layers were introduced to optimize the interface quality of CZT thick films. Results of x-ray diffraction showed that the full width at half maximum (FWHM) and dislocation density (δ) of interface of optimized samples were 0.156 ° and 2.543 × 1014 lin/m2, respectively. Interface detect analysis of free-standing CZT and CZT/CdTe thick films was studied by x-ray photoelectron spectroscopy (XPS) and low-temperature photoluminescence (PL) spectroscopy, and mechanism of in-situ annealing in CdTe atmosphere to reduce interfacial defect states was discussed. Moreover, the photo-dark current ratio of the CZT/CdTe thick film metal-semiconductor-metal (MSM) structural photodetector was as high as 5530, which was nearly double that of the CZT thick film detector, and the carrier mobility lifetime product could reach 5.59 × 10−4 cm2/V at 100 V bias, confirming the improvement of carrier transport capacity and detection efficiency. CZT-based detectors have inestimable prospect in the field of solar-blind ultraviolet detection with the participation of CdTe buffer layers.

Strongly Quantum-Confined Perovskite Nanowire Arrays for Color Tunable Blue Light-Emitting Diodes

Color tunability of perovskite light emitting diodes (PeLEDs) by mixed halide compositional engineering is one of the primary intriguing characteristics of PeLEDs. However, mixed halide PeLEDs are often susceptible to color red-shifting caused by halide ion segregation. In this work, strongly quantum-confined perovskite nanowires (QPNWs) made of CsPbBr3 are grown in nanoporous anodic alumina templates using a closed space sublimation (CSS) process. By tuning the pore size with atomic layer deposition (ALD), QPNWs with diameter of 6.6 nm to 2.8 nm have been successfully obtained, with continuous tunable photoluminescence emission color from green (512 nm) to pure blue (467 nm). To better understand the photo-physics of QPNWs, carrier dynamics and the benefit of alumina passivation are studied and discussed in detail. Eventually, PeLEDs using various diameters of CsPbBr3 QPNWs are successfully fabricated with cyan color (492 nm) PeLEDs achieving a record high 7.1% EQE for all CsPbBr3 based cyan color PeLEDs. And sky-blue (481 nm) and pure blue (467 nm) PeLEDs have also been successfully demonstrated, respectively. The work here demonstrates a unique approach to achieve quantum confined one-dimensional perovskite structures and color tunable PeLEDs, particularly blue PeLEDs.

Microstructure and optical properties of CdTe thin films prepared by close spaced sublimation method at various growth temperatures

Cadmium telluride (CdTe) is an important Ⅱ-Ⅵ multifunctional semiconductor, often used as the light absorption layer in photovoltaic solar cells or the core layer in γ-ray detection. The deposition temperature has a great greatly influences on the microstructure and morphology of the thin films during their growth. Here, close spaced sublimation method is used for depositing CdTe thin films on glass substrate at various temperatures conditions. The microstructure, morphology, optical and luminescent properties of the CdTe thin films were systematically characterized. CdTe thin films with a high preferred crystal orientation, large grain size, low micro-stress, and strong luminescence performance were obtained. And the origin of luminescent peaks is analyzed in detail by low-temperature photoluminescence spectroscopy.

Routes to increase performance for antimony selenide solar cells using inorganic hole transport layers

Simple compound antimony selenide (Sb2Se3) is a promising emergent light absorber for photovoltaic applications benefiting from its outstanding photoelectric properties. Antimony selenide thin film solar cells however, are limited by low open circuit voltage due to carrier recombination at the metallic back contact interface. In this work, solar cell capacitance simulator (SCAPS) is used to interpret the effect of hole transport layers (HTL), i.e., transition metal oxides NiO and MoO x thin films on Sb2Se3 device characteristics. This reveals the critical role of NiO and MoO x in altering the energy band alignment and increasing device performance by the introduction of a high energy barrier to electrons at the rear absorber/metal interface. Close-space sublimation (CSS) and thermal evaporation (TE) techniques are applied to deposit Sb2Se3 layers in both substrate and superstrate thin film solar cells with NiO and MoO x HTLs incorporated into the device structure. The effect of the HTLs on Sb2Se3 crystallinity and solar cell performance is comprehensively studied. In superstrate device configuration, CSS-based Sb2Se3 solar cells with NiO HTL showed average improvements in open circuit voltage, short circuit current density and power conversion efficiency of 12%, 41%, and 42%, respectively, over the standard devices. Similarly, using a NiO HTL in TE-based Sb2Se3 devices improved open circuit voltage, short circuit current density and power conversion efficiency by 39%, 68%, and 92%, respectively.

Low-temperature vacuum deposition of green phosphorescent OLED devices using close-space sublimation of spirobifluorene hosts

Commercial organic light-emitting diode (OLED) displays are mainly produced by line-of-sight vacuum thermal evaporation (VTE) methods that operate at high temperatures with low material utilization, exerting thermal stress on shadow masks and driving up costs. Further advancement of OLED displays towards higher resolutions at reduced cost demands more efficient deposition sources and OLED materials that can be reliably evaporated at low temperatures. In this study, we utilized close-space sublimation (CSS), an area deposition technique with a high material utilization rate, to lower the evaporation temperature of materials and deposition time drastically. By employing a spirobifluorene-based host that has a matching CSS profile with common iridium-based dopants, we have successfully reduced the evaporation temperature of the emitting layer (EML) to as low as 120 °C in CSS, less than half of the temperature required in VTE, and shortened the deposition time from minutes to seconds. The CSS-deposited green phosphorescent OLEDs exhibited comparable efficiencies with their VTE-deposited counterparts and demonstrated promising lifetimes.

A review on Physical Properties of CdS Thin Film

CdS Cadmium Sulfide is the important semiconductor materials. Semiconductors are solids with conductivities ranged from 104 to 10-10 (n cm)-l. The properties of CdS are structural, Electrical and Optical. We examine a number of papers published between 1983 and 2015 that created CdS thin films in a variety of ways, including chemical bath deposition, spray pyrolysis, thermal evaporation, close spaced sublimation, and pulsed laser ablation. They found band gap energy in (eV), Refractive index (n) and Extension coefficient (k). X-ray diffraction, the researchers employed energy dispersive X-ray spectroscopy with scanning electron microscopy in this study. The crystallinity the quality of the movie improves after annealing, As a result, optical transmittance is reduced. The structure is hexagonal in general. All of the films are ideal as efficient for solar cell applications, there are a number of different window layers that may be used. Due to their high transmittance and low resistance values. These findings suggest that CBD films with a broad Low resistivity, high mobility, and a high carrier concentration are all characteristics of the band gap. Produced at pH 11 are ideal contenders for use in various optoelectronic devices.

Sb2 Se3 Thin-Film Solar Cells Exceeding 10% Power Conversion Efficiency Enabled by Injection Vapor Deposition Technology.

Binary Sb2 Se3 semiconductors are promising as the absorber materials in inorganic chalcogenide compound photovoltaics due to their attractive anisotropic optoelectronic properties. However, Sb2 Se3 solar cells suffer from complex and unconventional intrinsic defects due to the low symmetry of the quasi-1D crystal structure resulting in a considerable voltage deficit, which limits the ultimate power conversion efficiency (PCE). In this work, the creation of compact Sb2 Se3 films with strong [00l] orientation, high crystallinity, minimal deep level defect density, fewer trap states, and low non-radiative recombination loss by injection vapor deposition is reported. This deposition technique enables superior films compared with close-spaced sublimation and coevaporation technologies. The resulting Sb2 Se3 thin-film solar cells yield a PCE of 10.12%, owing to the suppressed carrier recombination and excellent carrier transport and extraction. This method thus opens a new and effective avenue for the fabrication of high-quality Sb2 Se3 and other high-quality chalcogenide semiconductors.

ACTIVATION METHOD OF CADMIUM TELLURIDE THIN FILMS FOR CREATION EFFECTIVE SOLAR CELLS

The influence of annealing in freon on the cadmium telluride films crystal structure obtained by closed space sublimation method and the output parameters and light diode characteristics of solar cells based on these films were studied. Annealing of structures was performed at a temperature of 400°С for different times. The studies of the crystal structure were performed by the X-ray diffraction analysis. These studies have shown that the annealing in freon leads to a recrystallization of cadmium telluride films, which reduces microstress. It is evidenced by the lattice period decrease after annealing from а = 6.491 Å to а = 6.488 Å. The study of the influence of annealing in freon on the output parameters and light diode characteristics of solar cells was performed. For this purpose the light current-voltage characteristics of ITO/SnO2/CdS/CdTe structures, annealed for 20‑40 minutes, were studied. It was found that the optimal annealing time in freon is 30 minutes. It is shown that the solar cells based on such films have the highest efficiency in 11.7% after annealing in freon for 30 minutes. A simulation of light diode characteristics influence on the efficiency showed that the solar cells efficiency increase due to the diode saturation current density decrease when the annealing time in freon increases to 30 minutes. When the annealing time increases to 40 minutes the efficiency decrease is associated with a shunt resistance decrease. It is also shown that the pre-irradiation of solar cells in the AM1.5 mode for 20 minutes leads to an additional efficiency increase to 12.2%. According to the simulation results, such efficiency increase is also due to the diode saturation current density decrease.

Mitigating the Internal Ion Migration of Organic-Inorganic Hybrid Perovskite by a Graphene Oxide Interlayer.

Organic-inorganic hybrid perovskite solar cells (PSCs) have attracted great research attention due to their outstanding optoelectronic properties. The low-temperature synthesizing process of organic-inorganic hybrid perovskites can provide a significant advantage of reducing the manufacturing cost of solar cells. However, at the same time, this also brings challenges to PSCs in the form of long-term stability. Because of the low vacancy formation energy, organic-inorganic hybrid perovskites suffer from serious ion migration issue. Also, this ion migration will lead to a series of stability problems, which can hardly be addressed by encapsulation. Currently, modifying the surface of perovskite by an ion-blocking layer is a common strategy for achieving highly stable PSCs. These strategies could effectively address the stability issues caused by the interfacial ion diffusion between perovskite and the charge transport layer. However, the ion migration inside the perovskite layer could be still a knotty problem, which is difficult to be solved through surface modification. Herein, we propose a novel strategy to mitigate the internal ion migration by inserting two-dimensional graphene oxide (GO) into a perovskite layer. Close-space sublimation and ultrasonic spray coating were employed to prepare perovskite and GO layers, respectively. We found that the ion migration in the as-prepared perovskite/GO/perovskite can be successfully mitigated by the GO interlayer. As a result, the champion PSC with a GO interlayer maintained 85% of its initial power conversion efficiency (PCE) after 96 h of continuous illumination. By contrast, the efficiency of the PSC without a GO interlayer declined rapidly and maintained only 50% of the initial value. We believe that this novel interlayer strategy could provide a new idea and approach to preparing highly stable PSCs.

Strongly Quantum-Confined Perovskite Nanowire Arrays for Color-Tunable Blue-Light-Emitting Diodes.

Color tunability of perovskite light-emitting diodes (PeLEDs) by mixed halide compositional engineering is one of the primary intriguing characteristics of PeLEDs. However, mixed halide PeLEDs are often susceptible to color red-shifting caused by halide ion segregation. In this work, strongly quantum-confined perovskite nanowires (QPNWs) made of CsPbBr3 are grown in nanoporous anodic alumina templates using a closed space sublimation process. By tuning the pore size with atomic layer deposition, QPNWs with a diameter of 6.6 to 2.8 nm have been successfully obtained, with continuous tunable photoluminescence emission color from green (512 nm) to pure blue (467 nm). To better understand the photophysics of QPNWs, carrier dynamics and the benefit of alumina passivation are studied and discussed in detail. Eventually, PeLEDs using various diameters of CsPbBr3 QPNWs are successfully fabricated with cyan color (492 nm) PeLEDs, achieving a record high 7.1% external quantum efficiency (EQE) for all CsPbBr3-based cyan color PeLEDs. Sky blue (481 nm) and pure blue (467 nm) PeLEDs have also been successfully demonstrated, respectively. The work here demonstrates a different approach to achieve quantum-confined one-dimensional perovskite structures and color-tunable PeLEDs, particularly blue PeLEDs.

An In-Depth Analysis of CdTe Thin-Film Deposition on Ultra-Thin Glass Substrates via Close-Spaced Sublimation (CSS)

This study evaluated the impact of the deposition pressure on the formation of cadmium telluride (CdTe) thin films on ultra-thin (100 µm) Schott glass substrate at high temperature (T > 450 °C) by Close-Spaced Sublimation (CSS) technique. CdTe thin films were grown under the pressure range of 1 Torr to 200 Torr to explore the impact of deposition pressure on CdTe thin-film properties. The microstructural, compositional and optoelectrical characteristics were examined. X-ray Diffraction (XRD) analysis revealed the cubic phase crystallite CdTe films with (111) preferential orientation. Scanning Electron Microscopy (SEM) demonstrated that the CdTe morphology and grain size could be regulated via the deposition pressure, whereby maximum grain growth was detected at low pressure (1–5 Torr). The thickness of CdTe films was reduced from 6 µm to 1.5 µm with the rise in deposition pressure. Moreover, the optical direct energy gap was derived in the range of 1.65–1.69 eV for the pressure value of 200 Torr to 1 Torr. Carrier density and resistivity were found to be in the order of 1013 cm−3 and 104 Ω cm, respectively. The experimental results suggest that the pressure range of 1–5 Torr may be ideal for CSS-grown CdTe films on flexible ultra-thin glass (UTG) substrates.

Reduced Recombination and Improved Performance of CdSe/CdTe Solar Cells due to Cu Migration Induced by Light Soaking.

The performance of CdTe solar cells has advanced impressively in recent years with the incorporation of Se. Instabilities associated with light soaking and copper reorganization have been extensively examined for the previous generation of CdS/CdTe solar cells, but instabilities in Cu-doped Se-alloyed CdTe devices remain relatively unexplored. In this work, we fabricated a range of CdSe/CdTe solar cells by sputtering CdSe layers with thicknesses of 100, 120, 150, 180, and 200 nm on transparent oxide-coated glass and then depositing CdTe by close-spaced sublimation. After CdCl2 annealing, Cu-doping, and back metal deposition, a variety of analyses were performed both before and after light soaking to understand the changes in device performance. The device efficiency was degraded with light soaking in most cases, but devices fabricated with a CdSe layer thickness of 120 nm showed reasonably good efficiency initially (13.5%) and a dramatic improvement with light soaking (16.5%). The efficiency improvement is examined within the context of Cu ion reorganization that is well known for CdS/CdTe devices. Low-temperature photoluminescence data and Voc versus temperature measurements indicate a reduction in nonradiative recombination due to the passivation of defects and defect complexes in the graded CdSexTe1-x layer.

Sputter-deposited CdMgTe for rear contact to CdSeTe/CdTe solar cells

CdTe-based photovoltaic device performance improvement is predominantly limited by open-circuit voltage. This work approaches the voltage deficit challenge through the incorporation of a cadmium magnesium telluride (CdMgTe) electron reflector layer at the back of 1.5- μm CdSeTe/CdTe absorbers to reduce back-surface recombination through a conduction band offset. A sputtered CdMgTe electron reflector layer permitted low fabrication temperatures and circumvented the intolerance of CdMgTe to thermal processing present in traditional close-space sublimation (CSS)-deposited CdMgTe devices. We demonstrate that sputtered CdMgTe simultaneously promotes the retention of chlorine passivation and magnesium which is not feasible with CSS fabrication. We also show the importance of the Cu and Te back contact order in CdMgTe devices. Through the optimization of the sputtered CdMgTe substrate temperature, doping, and back structure configuration, 1.5 μm CdSeTe/CdTe devices with a sputtered CdMgTe layer achieved an efficiency of 16.0%, significantly higher than with CSS CdMgTe, and demonstrated partial enactment of electron-reflector behavior. • Sputtered CdMgTe electron reflector solar cells achieve higher efficiencies than close-space sublimation-deposited. • Low temperatures of sputtered CdMgTe reduce magnesium diffusion and chlorine loss. • CdTe devices with CdMgTe electron reflectors require back contact optimization. • CdTe voltage improvement with CdMgTe limited by a partial negative back valence band offset.

Underwater Multispectral Computational Imaging Based on a Broadband Water-Resistant Sb2Se3 Heterojunction Photodetector

Exploration, utilization, and protection of marine resources are of great significance to the survival and development of mankind. However, currently classical optical cameras suffer information loss, low contrast, and color distortion due to the absorption and scattering nature for the underwater environment. Here, we demonstrate an underwater multispectral computational imaging system combined with single-photodetector imaging algorithm technology and a CdS/Sb2Se3 heterojunction photodetector. The computational imaging technology coupled with an advanced Fourier algorithm can capture a scene by a single photodetector without spatial resolution that avoids the need to rely on high-density detectors array and bulky optical components in traditional imaging systems. This convenient computational imaging method provides more flexible possibilities for underwater imaging and promises to give more imaging capabilities (such as multispectral imaging, antiscattering imaging capability) to meet ever-changing demand of underwater imaging. In addition, the water-resistant CdS/Sb2Se3 heterojunction photodetector fabricated by the close spaced sublimation (Sb2Se3) and chemical bath deposition (CdS) shows excellent self-powered photodetection performance at zero bias with high LDR of 128 dB, broadband response spectrum range of 300-1050 nm, high responsivity up to 0.47 A/W, and high specific detectivity over 5 × 1012 jones. Compared with the traditional optical imaging system, our designed computational imaging system that combines the advanced Fourier algorithm and a high-performance CdS/Sb2Se3 heterojunction photodetector exhibits outstanding antiscattering imaging capability (shielded by frosted glass), weak light imaging capability (∼0.2 μW/cm2, corresponding to moonlight intensity), and multispectral imaging capability. Therefore, we believe that this work will boost the progress of marine science.

Effect of ultra-thin CdSexTe1−x interface layer on parameters of CdTe solar cells

Effects of an ultra-thin CdSexTe1-x junction interface layer on CdTe solar cell parameters were investigated employing a CdSexTe1-x/CdTe absorber structure. CdSexTe1-x thin films with varying composition were grown by vacuum evaporation and CdTe films were produced by the close spaced sublimation (CSS) method. XRD analysis showed that while the CdSexTe1-x layers with x values less than 0.39 crystallized in cubic structure, films that were richer in Se displayed a (cubic + hexagonal) mixed phase. SEM analysis demonstrated a morphology with compact grains for all films. However, the grain size decreased appreciably with increasing Se content. Optical measurements showed that the band gaps of the alloys reached the minimum value of 1.40 eV at x ∼ 0.32. CdS/CdSexTe1-x/CdTe solar cells were fabricated employing 100 nm thick CdSexTe1-x interlayers. The Grazing Incidence (GI)-XRD spectra of CdSexTe1-x used in the device structure showed that these inter-layers had graded alloy composition. The average Se-concentration within the graded alloy films were found to agree with the values obtained by EDS. Conversion efficiencies of 9.59% 11.69% and 10.13%, were obtained for x values of 0.24, 0.32 and 0.39, respectively. Spectral response showed enhanced long wavelength response for all devices due to the presence of the CdSexTe1-x interlayer. It was concluded that using an ultra-thin CdSexTe1-x inter-layer with optimum properties between CdS (junction partner) and CdTe improves the cell performance by increasing the current density of the device.