Circuit Switching Research Articles

On applications of quasi-Abelian Cayley graphs to Denial-of-Service protection

This paper addresses the problem of designing secure control for networked multi-agent systems (MASs) under Denial-of-Service (DoS) attacks. We propose a constructive design method based on the interaction topology. The MAS with a non-attack communication topology, modeled by quasi-Abelian Cayley graphs subject to DoS attacks, can be represented as a switched system. Using switching theory, we provide easily applicable sufficient conditions for the networked MAS to remain asymptotically stable despite DoS attacks. Our results are applicable to both continuoustime and discrete-time systems, as well as to discrete-time systems with variable steps or systems that combine discrete and continuous times.

On applications of quasi-Abelian Cayley graphs to Denial-of-Service protection

This paper addresses the problem of designing secure control for networked multi-agent systems (MASs) under Denial-of-Service (DoS) attacks. We propose a constructive design method based on the interaction topology. The MAS with a non-attack communication topology, modeled by quasi-Abelian Cayley graphs subject to DoS attacks, can be represented as a switched system. Using switching theory, we provide easily applicable sufficient conditions for the networked MAS to remain asymptotically stable despite DoS attacks. Our results are applicable to both continuoustime and discrete-time systems, as well as to discrete-time systems with variable steps or systems that combine discrete and continuous times.

Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors.

With the development of high-voltage and high-frequency switching circuits, GaN high-electron-mobility transistor (HEMT) devices with high bandwidth, high electron mobility, and high breakdown voltage have become an important research topic in this field. It has been found that GaN HEMT devices have a drift in threshold voltage under the conditions of temperature and gate stress changes. Under high-temperature conditions, the difference in gate contact also causes the threshold voltage to shift. The variation in the threshold voltage affects the stability of the device as well as the overall circuit performance. Therefore, in this paper, a review of previous work is presented. Temperature variation, gate stress variation, and gate contact variation are investigated to analyze the physical mechanisms that generate the threshold voltage (VTH) drift phenomenon in GaN HEMT devices. Finally, improvement methods suitable for GaN HEMT devices under high-temperature and high-voltage conditions are summarized.

STUDY OF LOGICAL OPERATIONS IN VECTORS OF A CIRCUIT OF HYPERCUBE

Parallel structure and switching circuit have become a fundamental theme in the concern of Artificial Intelligence and interconnection network and also it is revealed to be critical when researching in high performance. This Study helps to the process of breaking down larger process into normal form and independent secondary module, which helps to perform operations with various properties such as atomicity, consistency; isolation and switching features. They also help for manage and tune processing during faults in architecture, the results of which are combined upon completion as part of an overall algorithm. In this paper firstly we select the independent small module of hypercube then represent into data structure and apply logical operations into vectors

A Low-Power BL Path Design for NAND Flash Based on an Existing NAND Interface

This paper is an extended version of a previously reported conference paper regarding a low-power design for NAND Flash. As the number of bits per NAND Flash die increases with cost scaling, the IO data path speed increases to minimize the page access time with a scaled CMOS in IOs. The power supply for IO buffers, namely, VDDQ, decreases from 3 V to 1.2 V, accordingly. In this paper, the way in which a reduction in VDDQ can contribute to power reduction in the BL path is discussed and validated. Conventionally, a BL voltage of about 0.5 V has been supplied from a supply voltage source (VDD) of 3 V. The BL path power can be reduced by a factor of VDDQ to VDD when the BL voltage is supplied by VDDQ. To maintain a sense margin at the sense amplifiers, the supply source for BLs is switched from VDDQ to VDD before sensing. As a result, power reduction and an equivalent sense margin can be realized at the same time. The overhead of implementing this operation is an increase in the BL access time of about 2% for switching the power supply from VDDQ to VDD and an increase in the die size of about 0.01% for adding the switching circuit, both of which are not significant in comparison to the significant power reduction in the BL path power of the NAND die of about 60%. The BL path is then designed in 180 nm CMOS to validate the design. When the cost for powering the SSD becomes quite significant, especially for data centers, an additional lower voltage supply, such as 0.8 V, dedicated to BL charging for read and program verifying operations may be the best option for future applications.

7424 × 7424 Optical Circuit Switch With 1.4 μs Switching Time Enabled by Silicon-Photonic 64-Port Space Switches and Burst-Mode Coherent Receivers

7424 × 7424 Optical Circuit Switch With 1.4 μs Switching Time Enabled by Silicon-Photonic 64-Port Space Switches and Burst-Mode Coherent Receivers

Understanding magnetoelectric switching in BiFeO3 thin films

In this work we use a phenomenological theory of ferroelectric switching in BiFeO3 thin films to uncover the mechanism of the two-step process that leads to the reversal of the weak magnetization of these materials. First, we introduce a realistic model of a BiFeO3 film, including the Landau energy of isolated domains as well as the constraints that account for the presence of the substrate and the multidomain configuration found experimentally. We use this model to obtain statistical information about the switching behavior—by running dynamical simulations based on the Landau-Khalatnikov time-evolution equation, including thermal fluctuations—and we thus identify the factors that drive the two-step polarization reversal observed in the experiments. Additionally, we apply our model to test potential strategies for optimizing the switching characteristics. Published by the American Physical Society 2024

Record peak current density of over 1500 kA/cm2 in highly scaled AlN/GaN double-barrier resonant tunneling diodes on free-standing GaN substrates

This work demonstrates high-performance AlN/GaN double-barrier resonant tunneling diodes (RTDs) with high peak current density grown by plasma-assisted molecular beam epitaxy on c-plane free-standing GaN substrates, featuring stable and repeatable negative differential resistance (NDR) characteristics at room temperature. By scaling down the barrier thickness of AlN barrier and the lateral mesa size of collector, the record peak current density of 1551 kA/cm2 is achieved along with a peak-to-valley current ratio (PVCR) of 1.24, which is attributed to the reduced resonant tunneling time under thinner AlN barrier and the suppressed external incoherent valley current by reducing the dislocation number contained in the RTD device with the smaller size of collector. By statistically analyzing the NDR performance of RTD devices with different thicknesses of AlN barrier, the average peak current density increases from 145.7 to 1215.1 kA/cm2, while the average PVCR decreases from 1.45 to 1.1, correspondingly, accompanying with a decreased peak voltage from 6.89 to 5.49 V, with downscaling the AlN barrier thickness from 1.5 to 1.25 nm. The peak current density obtained in this work is the highest value among all the reported nitride-based RTDs up until now while maintaining high PVCR value simultaneously, which illustrates that ultra-scaled RTD based on vertical quantum-well structure and lateral collector size is a valuable approach for the development of nitride-based RTDs with excellent NDR characteristics and reveals their great potential applications in high-frequency oscillation sources and high-speed switch circuits.

An angle of arrival estimation method for intelligent metasurface using machine learning

Today, techniques for altering electromagnetic waves and the data they transport are increasingly crucial. These techniques have become increasingly important in several communication technologies, such as intelligent metasurface, with the rise and development of next-generation wireless communication systems. Since those technologies call for locating devices, angle of arrival (AoA) analysis becomes a crucial area for research. The AoA can now be shown in various ways, and some subspace methods have already achieved great precision. However, the extensive calculation required by those techniques is one of their key shortcomings. The author developed a novel radio frequency (RF) switching circuit design in this research and applied a novel machine-learning method to signal AoA. In single-wave settings, it was discovered that the proposed machine learning method performed satisfactorily with an average difference of 0.6 degrees.

Design and analysis of fault-tolerant sequential logic circuits for safety-critical applications

Safety-critical systems used in applications that demand high levels of dependability, efficiency, and fault-tolerance often use sequential logic circuits in its design and implementation. The safety-critical digital system typically uses latches, flip-flops, and other memory elements, which are prone to the effects of natural faults and single event upsets (SEUs) caused by radiation-induced effects. The faults can lead to subsystem failures due to the continuous advancement in the realization of the small size transistor. To design a reliable digital-based system, it is essential to develop new fault-tolerance approaches that are integrated into the design of sequential logic circuits. This work proposes a novel fault-tolerant approach based on the redundancy of sequential logic circuit, which consists of a variety of design components, D flip-flop storage elements linked to a fault injection unit, a duplicate modular redundancy, and data monitoring units with a switching circuit. The experimental simulation results using a five-state Markov chain analysis model prove that the proposed fault-tolerant system can achieve 0.99999998 for reliability of the fault detection coverage (C) which equal to 0.99999. Finally, we believe that using this new approach of fault-tolerance and redundancy would improve the dependability and reliability of next generation safety-critical applications.

Stimulus-triggered task conflict affects task-selection errors in task switching: A Bayesian multinomial processing tree modeling approach.

In the present study, we used a modeling approach for measuring task conflict in task switching, assessing the probability of selecting the correct task via multinomial processing tree (MPT) modeling. With this method, task conflict and response conflict can be independently assessed as the probability of selecting the correct task and the probability of selecting the correct response within a given task, respectively. These probabilities can be estimated on the basis of response accuracy in the different experimental conditions. In two task-switching experiments, we used bivalent stimuli and manipulated irrelevant-task difficulty by varying the saliency of the stimulus feature belonging to the irrelevant task. The more salient the task-irrelevant stimulus feature, the more salient the irrelevant task, leading to more task conflict. Consistent with this assumption, we observed that task conflict, but not response conflict, was larger when the task-irrelevant stimulus feature was made more salient. Furthermore, both task conflict and response conflict were larger when the task switched than when the task was repeated. On a methodological level, the present results demonstrate that MPT modeling is a useful approach for measuring task conflict in task switching and for dissociating it from within-task response conflict. Furthermore, the present results inform theories of task switching by showing that the task-irrelevant feature tends to activate the irrelevant task set rather than being associated with a specific response option via a direct stimulus-response route. (PsycInfo Database Record (c) 2024 APA, all rights reserved).

Applications of safety transient voltage suppressors in the track circuits of railway signaling systems

This research presented the utilization of Safety Transient Voltage Suppressors (STVS) in the track circuits of railway signaling systems, occurring during circuit switching due to changes in track occupancy conditions, resulting in damage and malfunction of the BR966F2 relay. The study employed Failure Modes and Effect Analysis (FMEA) combined with 1kV actual transient overvoltage testing featuring a waveform slope of 184/380 μs. Results revealed two transient voltage suppression levels encompassing Set A_(a,b), Set B_(a) and Set C_(a,b) as well as Set A//Set B//Set C and All Mode. These configurations achieved a clamping voltage of 41.6 V, categorized as Stage 1. Configurations like Set A_(c), Set B_(b,c) and Set C_(c) displayed increased series circuit behavior leading to a clamping voltage of 48.6 V, categorized as Stage 2. The application of STVS device in the track circuit of the signaling system reduced the transient voltage by diversion of the Transient Current or ISTVS through the STVS device into the ground system or the clamping voltage at the STVS device. This prevented the transient power from flowing into and damaging the relays of the track circuit, leaving only the clamping voltage with a missing peak wave. This contributed to the stability of the track circuit within the railway signaling system while also raising the Safety Integrity Level (SIL) to a higher standard, in accordance with the specifications of IEC 16508-4 and the unique requirements of the State Railway of Thailand. These enhancements increased the advanced safety system within the track circuit, particularly for train control and train operation functions of the State Railway of Thailand

Switching to sustainable products: The role of time, product, and customer characteristics

AbstractAchieving a sustainable economy is one of the primary needs of our time, and sustainable products can play a decisive role in achieving this goal. This article seeks answers about the role of time and product characteristics in the intention to switch to a sustainable product using the example of an everyday product. Drawing from social identity theory, utility maximization and switching theory, the authors propose a conceptual model to examine these questions in a specific market disruption when a product is modified by the same company. The framework focuses on the time‐varying effects of customers' features (brand identification, loyalty, embeddedness) and products' features (perceived value [PV], compliance, switching cost) on switching behavior. The research was carried out using a quasi‐experimental method in three periods. In the first stage, Cox Proportional Hazard Regression was used, and a random‐effects model in the second. Results from longitudinal data of 282 customers during the launch of a new sustainable product show that customer characteristics do not influence the intention to switch. In contrast, the PV and switching costs inhibit the switching behavior, but their effects vary over time. In particular, the effect of the relative PV of the sustainable product on switching will increase over time, but the importance of customer–brand identification also rises. The study has important implications for introducing a sustainable equivalent of an incumbent product of the same brand.

Switching dynamics of a Filippov memristive Hindmash–Rose neuron model with time delay

Considering the existence of magnetic induction effect with different intensities in the process of subthreshold and suprathreshold oscillations of bioelectrical activities, a non-smooth feedback strategy for memristive current with time delay is proposed, and then a four-dimensional Filippov Hindmarsh–Rose (HR) neuron model is established. The local stability and bifurcation patterns of delayed subsystems are qualitatively analyzed. Accordingly, the discriminant formula for the direction and stability of periodic solutions generated by Hopf bifurcation is obtained on the center manifold. Importantly, the stability of subsystems has switching behavior, which is accompanied by abundant hidden electrical activities under the effect of time delay. The theoretical analysis clarifies that the proposed feedback strategy leads to complex sliding mode dynamics, including sliding segments, various equilibrium points and sliding bifurcations. Meanwhile, the analytical conditions for motions of grazing, sliding, and crossing are developed and verified based on the flow switching theory. Moreover, the mechanism and evolutive rule of the self-excited and hidden sliding electrical activities are revealed by the fast-slow variable dissection method. Finally, it is verified that the time delay can not only induce bistable structures composed of the quiescent state and periodic bursting, but also eliminate the hidden sliding dynamics.

Comparative analysis of the characteristics of outlet short circuit and winding insulation fault of distribution transformer and its preventive measures

AbstractOutlet short circuit on the low‐voltage (LV) side and winding inter‐turn short circuit faults are hazardous to transformer operation. To investigate the formation mechanism of winding insulation faults of distribution transformer, ANSYS Maxwell was used to build a coupled magnetic field‐circuit model with the same structural dimension as the actual distribution transformer. An outlet short circuit and winding inter‐turn insulation faults were set by using the voltage‐controlled switch in the external circuit of the model. Subsequently, the differences in the electromagnetic characteristics and the electrodynamic force distributions of the windings under three operating conditions, namely, nominal load, three‐phase outlet short circuit on the LV side and inter‐turn insulation failure were studied, respectively. The results show that compared with the rated load, in the cases of outlet short circuit and inter‐turn insulation faults, the amplitude of winding current increases by 20 and 50 times, the magnetic field strength grows by 20 and 17 times, and the electrodynamic force rises by 400 and 230 times, respectively. Outlet short circuit fault is more likely to cause the winding instability and deformation, and inter‐turn short circuit fault can easily burn out winding insulation. Therefore, corresponding preventive measures were proposed.

A Pattern Reconfigurable Antenna for Ka-band Application

In this paper, we present an easy and systematic design approach to realize a dual beam reflector antenna at Ka-band which produces a narrow beam and a wide beam in the boresight. These two beams can be independently selected mechanically or by means of an electronic switching circuit. An exclusive systematic design approach has been presented. Simple mathematical expressions have been used for the design of the reflector and feed horns. The complete antenna has been realized with aluminum and its performances were experimentally validated. It yields ≈11.44% impedance bandwidth. It produces ≈ 35.4 dBi gain in the narrow beam mode with a half power beamwidth of ≈ 4.4° × 3.7° and about ≈ 11.3 dBi gain in the wide beam mode with a 3 dB beamwidth of ≈ 46.5° × 46° at 28 GHz. In this present work, the patterns are swapped between a narrow-beam and a wide-beam in the broadside. The ratio of the wide-beamwidth to the narrow-beamwidth is about 11:1, which is substantially different from all earlier investigations.

A high-performance triboelectric nanogenerator with dual nanostructure for remote control of switching circuit.

Preparing nanostructured surfaces has been considered an effective method to improve the output of triboelectric nanogenerators (TENGs), but how to quickly prepare materials with a nanostructured surface for TENGs has always been a challenge. Here, polypropylene nanowires and electrospun nylon 11 nanofibers were successfully prepared through a simple and time-saving method with a high success rate. Compared with a flat TENG, the output performance of a dual nanostructured TENG is enhanced by more than 5 times. After 1H,1H,2H,2H-perfluorooctyl trichlorosilane was assembled on the surface of the polypropylene film, the dual nanostructured TENG achieved the maximum output with the short-circuit current, output voltage, and charge density of 63.3 μA, 1135 V and 161.5 μC m-2, respectively. Compared with a planar structured TENG, the short-circuit current and output voltage were enhanced by about 18 times, and the charge density was increased by about 36 times. In addition, the TENG showed good working stability with almost no decrease in output after continuous operation for 193 000 cycles. The electricity generated by this TENG can successfully light up 1280 LEDs and continuously power a multi-functional electronic watch. Finally, the triboelectric signal generated by this TENG was used to control an optocoupler switch, indicating good application prospects in a remote control switching circuit.

PH-Controlled enzymatic computing for digital circuits and neural networks.

Unconventional computing paradigms explore new methods for processing information beyond the capabilities of traditional electronic architectures. In this work, we present our approach to digital computation through enzymatic reactions in chemically buffered environments. A key aspect of this approach is its reliance on pH-sensitive enzymatic reactions, with the direction of the reaction controlled by maintaining pH levels within a specific range. When the pH crosses a defined threshold, the reaction moves forward and vice versa, akin to the switching action of electronic switches in digital circuits. The binary signals (0 and 1) are encoded as different concentrations of strong acids or bases, offering a bio-inspired method for computation. The final readout is done using UV-vis spectroscopy after applying detection reactions to indicate whether the output is 1 (indicated by the presence of the enzymatic reaction's product) or 0 (indicated by the absence of the enzymatic reaction's product). We build and evaluate a set of digital circuits in the lab using our proposed methodology to model the circuits using chemical reactions. In addition, we demonstrate the implementation of a neural network classifier using our framework.

Theory for nonlinear conductivity switching in semiconducting organic ferroelectrics.

In this work, the ferroelectric and semiconducting properties of the organic semiconducting ferroelectric benzotrithiophene tricarboxamide (BTTTA), and especially their nonlinear coupling, are theoretically investigated. BTTTA is an exponent of a small class of semiconducting organic ferroelectrics for which experiments have established a surprising polarization direction dependence of the bulk conductivity at finite fields. First, molecular dynamics (MD) simulations are used to investigate the occurrence and, under the influence of an external electric field, the inversion of the macroscopic electric dipole that forms along the axis of supramolecular columns of BTTTA. The MD results are consistent with the experimentally observed ferroelectric behavior of the material. Building on the MD results, a QM/MM scheme is used to investigate the charge carrier mobility in the quasi-1D BTTTA stacks in the linear and non-linear regimes. Indeed, at finite electric fields, a clear resistance switching effect was observed in the form of a hole mobility that is a factor ∼2 larger for antiparallel orientations of the polarization and field than for a parallel orientation. This phenomenon can be understood as a microscopic ratchet that is based on the non-equilibrium interaction between the (oriented) dipoles and the (direction of the) charge transport.

Next Generation Exabit/s Data Center Network Supporting All Optical Circuit and Packet Switching

Next Generation Exabit/s Data Center Network Supporting All Optical Circuit and Packet Switching