Inverter Circuit Research Articles

Ultrathin α-Bi2O3 Thin-Film Transistor for Cost-Effective Oxide-TFT Inverters.

Electronics is advancing toward greater diversity and sustainability by prioritizing energy efficiency and cost-effectiveness. Metal oxide thin-film transistor (TFT) represents a technology at the forefront of advancing next-generation sustainable electronics, and exploring oxide channel compositions is a crucial step in opening opportunities for developing next-generation device applications. This study presents the first development of n-channel α-Bi2O3-TFTs using a 4 nm ultrathin channel prepared by a cost-effective vacuum-free and solvent-free liquid metal printing method in ambient air. Even the pristine device exhibited a clear TFT action but required a large negative gate bias to turn off due mainly to excess carriers from oxygen vacancy in the α-Bi2O3 channel. Oxygen-containing post-annealing reduced both channel carrier and subgap defect densities, enabling the development of depletion and enhancement-type α-Bi2O3-TFTs with the saturation mobility of 2-4 cm2 V-1 s-1. Two types of oxide-TFT-based inverter circuits, zero-VGS-NMOS and CMOS inverters, were fabricated by using α-Bi2O3-TFTs, operating in a high voltage gain of over 130. This work demonstrates the potential of oxide semiconductor materials toward the development of next-generation sustainable electronics.

An application of multi-magnetic circular planar spiral relay to improve the performance of wireless power transfer system

Introduction. The system of delivering electricity without wires is known as wireless power transfer (WPT). The WPT system has been extensively used in a number of industries, health, telecommunications, and transportation. However, the distance between the transmitter and receiver coils has a significant impact on its efficiency. Lower power can be generated between coils the farther apart they are, and vice versa. The novelty of the proposed work is innovative in that it develops a multi-magnetic circular planar spiral relay to improve the WPT system’s performance and designs circular planar spiral coils to achieve an appropriate inductance value for the 5 kHz matching frequency. The goal of paper is to create a circular planar spiral coil with an appropriate inductance value for the 5 kHz matching frequency. Methods. The transmitter circuit, receiver circuit, and DC voltage source are parts of the WPT system. The inverter circuit uses the inductive coupling technique to transform the DC power source into AC voltage on the transmitter coil. The suggested coil is additionally employed as a multi-magnetic circular planar spiral relay in order to increase the mutual inductance between the receiver and transmitter coils. Results. To monitor the power improvement that results from adding a multi-magnetic relay to the system, the transmitter coil, receiver coil, and multi-magnetic relay are positioned at specific distances from each other. With Vdc = 30 V and dtr = 21 cm, the power received at the receiver coil can therefore be improved by up to 67 %. Practical value. The multi-magnetic circular planar spiral relay applied in the WPT system has been investigated in an experimental study and it can be applied for DC load. References 26, table 1, figure 18.

A Review on the Recent Development of High-Frequency Inverters for Wireless Power Transfer

With the demand for the miniaturization and integration of wireless power transfer (WPT) systems, higher frequency is gradually becoming the trend; thus, the power electronic device has become one of the main reasons for limiting the development. Therefore, further research on high-frequency inverters and purposeful design according to the characteristics of WPT systems are of great significance to promote the development of high-frequency WPT technology. There is still no literature that summarizes all the inverter circuits that can be applied to WPT systems, which makes it extremely difficult to find an inverter that meets the designer’s requirements. This paper reviews the high-frequency inverters for WPT systems, summarizes the derived topologies based on power amplifiers and H-bridge inverters, investigates the main factors restricting the development of high-frequency inverters, and analyzes the research directions for future development.

Investigating the Effects of Induction Heating on a Submerged Hollow Cylindrical Element

ABSTRACTThis article proposes an induction heating element that addresses heat transfer and thermal homogenization while being fully submerged in a liquid, specifically focusing on heating of water as a case study. The design calculations, fabrication, and realization of a resonant induction heating system that heats the proposed heating element are presented. The geometric shape of proposed heating element is a hollow cylinder that maintains structural strength while delivering required thermal energy because of an external time‐varying magnetic field. Detailed mathematical modeling of the proposed heating element's equivalent electric circuit has been presented while considering physical parameters including diameter, thickness, height, material properties, magnetic field frequency, and skin effect. A laboratory scale prototype of the induction heating system including the proposed heating element has been built, and experiments have been demonstrated. The experimental results of the working induction heating resonant inverter and RLC resonant circuit inductance and capacitance with induction load are presented. Additionally, the results of thermographic images and temperature–time profile of the water sample, which was heated using the proposed heating element, are provided to demonstrate the heating element's reliability and practicality. This research contributes to the field of induction heating technology by investigating a heating element that is submerged in a liquid medium, resulting in a uniform temperature distribution throughout the liquid. The conventional method of heating water in a stainless steel cup‐shaped container is an inefficient heat transfer process. In stainless steel cup‐shaped containers, a portion of the energy input used to boil the water is lost to the environment through the surface area of the container that is not in direct contact with the water. This heat loss occurs due to the container's design, which exposes a large surface area to the surrounding environment, allowing thermal energy to dissipate through conduction, convection, and radiation.

Consideration of DC/DC converter for photovoltaics with soft switching with modified push-pull current source inverter circuit

Consideration of DC/DC converter for photovoltaics with soft switching with modified push-pull current source inverter circuit

ХАРАКТЕРИСТИКИ РЕЗОНАНСНИХ СИСТЕМ ДЛЯ ОТРИМАННЯ ВИСОКОЇ НАПРУГИ НА НАВАНТАЖЕННІ ЄМНІСНОГО ТИПУ

The work is devoted to the comparative analysis of currents in inverter circuits of transformerless resonant and transformer resonant and non-resonant systems of the same power for obtaining high voltage on a capacitive load. The purpose of the work is to determine the type of system characterized by the smallest average operating current of the inverter switches. The dependence of the currents in the circuits of the inverters on the parameters of the resonant circuits was obtained, the results of calculations according to which allow us to state that the use of a transformerless circuit to ensure the same power of systems for obtaining high voltage on a capacitive type load will allow to almost halve the average operating current in the inverter circuit. Simulation modeling of the processes in the studied schemes was carried out, which confirms the obtained theoretical results. The use of high-voltage transformerless resonant systems to obtain high voltage on a capacitive load will allow to halve the nominal and maximum permissible current characteristics of the power elements of the converters. Ref. 10, fig. 3.

A Novel Shunt Zigzag Double-Tap Low-Harmonic Multi-Pulse Rectifier Based on a Three-Stage Power Electronic Phase-Shifting Transformer.

To solve the problem of the large size of traditional industrial frequency phase-shift transformers and the harmonic distortion of multi-pulse wave rectifier systems, this paper proposes a three-stage shunt zigzag power electronic phase-shift transformer based on a double-tap multi-pulse wave rectifier, which combines the power factor correction (PFC) converter with the voltage-type SPWM inverter circuit to form a power electronic converter to realize the frequency boost and power factor correction. Through AC-DC-AC conversion, the frequency of the three-phase AC input voltage is increased, the number of core and coil turns in the transformer is reduced to reduce the size of the phase-shifter transformer, a zigzag structure of the phase-shifter transformer is used to solve the unbalanced distribution of current between the diode bridges, and a passive harmonic suppression method on the DC side is used to generate a loop current by using a group of single-phase rectifier bridges to regulate the input line current of the phase-shifter transformer. The phase-shifted voltage is input into two three-phase diode rectifier bridges to rectify and supply power to the load. Simulation and semi-physical test results show that the proposed method reduces the total harmonic distortion (THD) value of the input current of the phase-shifted transformer to 7.17%, and the THD value of the grid-side input current is further reduced to 2.49%, which meets the harmonic standard and realizes the purpose of power factor correction as well as being more suitable for high-power applications.

Performance comparison between PID and Fuzzy logic controllers for the hardware implementation of traditional high voltage DC-DC boost converter

This research introduces a hardware implementation of DC-DC boost converter designed to elevate the DC voltage generated by renewable sources while effectively regulating it against line and load fluctuations for inverter application. The main objective is to boost the DC link voltage to the level of Vmax in the output AC voltage obtained from inverter circuits. This enables the inverters for transformer-less power conversion from DC to AC to reduce magnetic losses, size and weight of the inverter circuits used in the utility application. The proposed converter's topology and switching sequences play a crucial role in enhancing overall performance. Utilizing a Zero Current Switching (ZCS) technique, the converter efficiently recovers stored energy from the magnetics. The proposed converter attained the output voltage of 350 V at its current of 1A from the input voltage of 20 V at its current of 19 A. The ZCS technique and the topology of the converter enhances the efficiency to 92 %. The study employs traditional Proportional-Integral (PI) and Proportional-Integral-Derivative (PID) controllers for effective voltage regulation, analysing time domain specifications. Additionally, a Fuzzy logic controller is introduced as an alternative to PID controllers to compare their performance metrics, evaluating the optimization of the converter's transient and steady-state behaviours. The proposed converter is designed, simulated and their performance metrics are analysed using MATLAB for both with and without controllers. The step-time characteristics of the proposed converter with load resistance of RL = 500 Ω and an input voltage of Vi = 20 V has been determined and analysed. The PID system attained a rise time of 88.781 ms, an overshoot value of 9.341 %, and a steady-state error of 0.00043. The fuzzy system achieved a low-rise time of 10.624 ms, a low overshoot of 0.55 %, and a steady-state error of 0.0584. The hardware prototype of the proposed converter is implemented with a FPGA based PID and Fuzzy logic controllers for providing better voltage regulation and to improve the performance metrics of the converter. The simulation and experimental findings are contrasted, examined, and confirmed to ensure improved consistency in performance measures.

An Improved SPWM Strategy for Effectively Reducing Total Harmonic Distortion

In the inverter circuit, the speed at which the MOSFET is impacted by the presence of a parasitic inductor within the printed circuit board (PCB) leads to a delay in the switching process. Furthermore, the parasitic inductor within the circuit can easily form an LC oscillation with the parasitic capacitor of the MOSFET. These two issues result in an inconsistency between the actual output of the MOSFET and the driving signal waveform, leading to distortion in the sinusoidal pulse width modulation (SPWM) waveform and an increase in total harmonic distortion (THD). It is a common practice to mitigate gate oscillation by introducing a resistor at the gate of the MOSFET. However, elevating the resistance leads to deceleration in the charging process of the MOSFET’s parasitic capacitor, consequently causing an increase in the switching delay, and thereby increasing THD. Therefore, an effective strategy to reduce THD is proposed in this paper, while augmenting the gate resistance, computing the MOSFET switching delay, and applying corrective compensation. In this way, the inherent issues of the switch are addressed, resulting in inverter output waveforms that closely resemble sine waves and reduced THD. Through a combination of simulation and empirical experimentation, the efficacy of the proposed approach in significantly reducing THD in the inverter’s output waveform has been empirically substantiated.

Design of Small-Size Lithium-Battery-Based Electromagnetic Induction Heating Control System

This paper presents the design and optimization of a small-size electromagnetic induction heating control system powered by a 3.7 V–900 mAh lithium battery and featuring an LC series resonant full-bridge inverter circuit, which can be used for small metal material heating applications, such as micro medical devices. The effects of the resonant capacitance, inductor wire diameter, heating tube material, and wall thickness were studied to maximize the heating rate of the workpiece and simultaneously reduce the temperature rise of the NMOS transistor. The optimal circuit configuration meeting the design requirements was finally identified by comparing the operational parameters and NMOS transistor loss under different circuit conditions. Validation experiments were conducted on designed electromagnetic induction smoking devices. The results indicate that under an output current of 4.6 A, the heating tube can reach the temperature target of 250 °C within 11 s, and all NMOS transistors stay below 50 °C in a 5 min heating process.

ЦИФРОВА СИСТЕМА КЕРУВАННЯ РЕЗОНАНСНОГО ІНВЕРТОРА НАПРУГИ З САМОЗБУДЖЕННЯМ

Phase-locked loop systems (PLL) are widely used in control circuits of transistor resonant voltage inverters of induction heating installations. One of disadvantages of PLL systems is low speed, which is caused by the presence of a low-pass filter. This disadvantage is absent in self-oscillating systems, when the switching moment of the transistors is determined on each of half periods. At the same time, an asymmetry of half periods is possible, which is a significant disadvantage if there is a transformer at the output of the inverter. A self-oscillating digital control system for a resonant voltage inverter and equal half periods durations of the inverter output voltage has been developed. It can work with different methods of regulating the output current and allows to provide switching modes of transistors with minimal power losses. References 7, figures 5.

Nonlinear Characteristics of Metal-Insulated REBCO Magnet Under Various Switching Frequencies of Half-Bridge Inverter Circuit

Nonlinear Characteristics of Metal-Insulated REBCO Magnet Under Various Switching Frequencies of Half-Bridge Inverter Circuit

Device and circuit-level performance evaluation of DG-GNR-DMG vertical tunnel FET

This work presents the comparative study of Graphene Nanoribbon (GNR) based channel Double Gate (DG) Dual Gate Material (DMG) Vertical tunnel Field Effect Transistor (VTFET) performance with all Silicon material Tunnel Field Effect Transistor. The two-dimensional (2D) material GNR has been proposed in the channel material to enhance the device performance due to its low bandgap, high mobility, and high saturation velocity. The proposed device's DC, RF, and circuit-level performance analysis has been carried out for the first time. GNR-based channel VTFET shows a better average subthreshold swing (SSAVG) of 16 mV/decade compared to Silicon Vertical Tunnel FET (36 mV/decade) at a drain voltage VDS = 0.5 V. The study of temperature effects on the DC parameters is also included along with the analog/RF FOMs for the proposed two structures. In addition, the performances are compared with other reported works; it is observed that DG-GNR-DMG-VTFET offers better results than Silicon (Si)-based VTFET and other said TFET work. Finally, circuit-level analysis has been done by designing inverter and ring oscillator circuits for the proposed structures, and performance is compared in these two devices. The market-available Silvaco ATLAS TCAD simulator has been used for device-level simulation. Further, circuit-level analysis has been carried out in the Cadence Virtuoso tool using a look-up table-based Verilog-A model.

Threshold Inverter Quantizer-Based 2-Bit Comparator using Spatial Wavefunction Switched (SWS) FET Inverters: Power Dissipation Analysis

This paper aims to assess the power dissipation of a threshold quantizer (TIQ) 2-bit-based comparator using a SWS-FET-based inverter [1, 2, 4, 5]. Unlike conventional comparators, SWS-based comparator functionalized with TIQ comprises two or more vertically stacked quantum dots or well channels [1-3, 5, 6]. Herein, power dissipation analysis of the simulated circuit is carried out using Cadence by integrating the Berkeley Short-Channel IGFET Model (BSIM) and the analog behavioral model (ABM) [1,3,4,9]. The transient behavior of the inverter circuit is evaluated using 180 nm technology node. Our results demonstrated a significant reduction in power dissipation which overcome the limitation of previous 4-state logic implementations.

Study of performance evaluation of various characteristics of a single phase full bridge inverter circuit using surrounded channel junctionless field effect transistor

This paper reports the characteristics study of a single phase full bridge power electronic inverter circuit with a new type of technology namely surrounded channel junctionless field effect transistor (SCJLFET) as a switch. The inverter circuit has been designed using mixed mode simulation platform of TCAD device simulator. The transient characteristics for various temperatures and work functions have been analysed. In the steady state analysis the output current and voltage variation with input voltage with various temperatures and work functions have been studied. The power factor variations with gate oxide thickness and dielectric constant of gate dielectric. The simulation and designing process along with pros and cons have been characterized. The SCJLFET would be one of the strongest participants for advanced power electronics technology as a switches, with various virtues of high-speed operation, low power consumption and low budget process integration. It has also been found that single phase full bridge inverter is giving best results when made using SCJLFET.

GaAs-on-insulator based vertical heterojunction tunnel FET: proposal and analysis for VLSI circuit applications

This work analyses the Gallium Arsenide (GaAs)-on-insulator based vertical heterojunction tunnel FET with Gallium Antimonide (GaSb) as source material and GaAs as channel/drain material (GaSb/GaAs VTFET) to enhance the performance of the device and is compared with the Silicon-based VTFET. Silvaco Atlas TCAD tool is employed to perform numerical calculations. Tentative fabrication process flow of GaSb/GaAs VTFET is presented. GaSb is a low bandgap material that enhances the tunneling of charge carriers at source-channel heterojunction. GaSb/GaAs VTFET device outperforms Si-based VTFET in terms of electrical performance metrics such as ON-state current (ION), and ION/IOFF increases by a factor of 11 and 270 respectively; whereas OFF-state current (IOFF), subthreshold swing (SS), threshold voltage (VT) and drain-induced barrier lowering (DIBL) reduce by 95.98%, 39.36%, 17.14% and 29.17% respectively. Further, analog/RF and linearity/distortion performance analysis is carried out. GaSb/GaAs VTFET has improved analog/RF performances in terms of cut-off frequency (fT), gain-bandwidth product (GBP), transit time (τ), device efficiency (DE), transconductance frequency product (TFP) and suppressed distortions in compare to Si-based VTFET. Finally, GaSb/GaAs VTFET is evaluated for process variations and designing digital inverter and common source amplifier circuits. The Look-up-table (LUT) based Verilog-A model within the CADENCE tool has been employed to scrutinize the transient responses of inverter and common source amplifier circuits. Unity gain frequency and 3-dB bandwidth obtained for GaSb/GaAs VTFET amplifier are 15 GHz and 5.97 GHz. Therefore, this work presents GaSb/GaAs VTFET’s strong candidature for analog and digital VLSI circuit designing.

Single-phase online interactive uninterruptible power supply design

The single-phase on-line interactive uninterruptible power supply (UPS) designed in this paper consists of three circuits, namely, a single-phase power factor correction circuit, a single-phase inverter circuit, and a bi-directional DC/DC circuit, each of which contains a main circuit as well as a control circuit. The principle, parameter design and control circuit design of each circuit are briefly described. The simulation model of the UPS is constructed, and the simulation results in normal and abnormal utility power are given to verify the correctness of the design.

Energy-efficient design of quaternary logic gates and arithmetic circuits using hybrid CNTFET-RRAM technology

Multi-valued logic (MVL) extends binary logic by providing a framework to represent complex systems with more than two truth values. MVL was introduced to confront the enormous interconnect issue associated with the binary logic in implementing the presnt day complex nanoelectronic architectures. This paper delves into the circuit design, computational aspects, and practical applications of the quaternary logic system, which is a type of MVL with four truth values. The multi-threshold property of carbon nanotube field-effect-transistors (CNTFETs), combined with the ability of resistive random-access memory (RRAM) to store multiple resistance values, has enabled the design of quaternary logic gates and arithmetic circuits. A new CNTFET-based design architecture has been proposed to implement the quaternary logic compatible with the existing technologies. Quaternary logic gates such as inverter, NAND, and NOR, and quaternary arithmetic circuits including decoder, half adder, and multiplier have been designed. The power-delay-product (PDP) of the proposed quaternary inverter, NAND, NOR, half adder, and multiplier is 62.38%, 93.4%, 80.29%, 14.79%, and 20% less than the least PDP of the quaternary designs under consideration. The static power reduction due to the effecciency of the design architecture and high OFF state resistance offered by integrating RRAM into the logic design was explored.The proposed circuits have been subject to various types of parameter variations to validate thir proper functionality in presence of these variations.

IEZ-Source Inverter Topology with Tuned PID Controller of Carrier SPWM Technique in Grid Connected System

Z-source inverters are used in controller applications, which offer higher performance than the buck-boost converter. This work presents the Improved Embedded Z (IEZ)-source inverter used for the impedance network. The Z-source inverter includes the switching topologies, so the double inductor is added to the EZ source inverter circuit. IEZ source inverter manages the Total Harmonic Distortion (THD), and the PID controller controls the inverter voltage. The Social Ski Driver (SSD) Optimization algorithm is used to tune the parameters of the PID controller. The harmonic content of the Z-source inverter is reduced by the carrier based sinusoidal Pulse Width Modulation (SPWM) technique. The Improved Embedded Z-source Inverter (IE-ZSI) is utilized to apply a grid-connected system. The inverters receive the power from the DC voltage and supply the grid-connected load with controllable voltage. The proposed work is implemented in the platform MATLAB/SIMULINK to evaluate the performance of the voltage across the capacitor, the voltage across the inductor, grid current and grid voltage. Inverter DC link voltage performance was compared to conventional Z-source inverters and embedded Z-source inverters. The proposed work achieved 1.52% THD compared with existing techniques.

Optimizing Device Dimensions for Dual Material Junctionless Tree-FET: A Path to Improved Analog/RF Performance

This comprehensive study delves into the intricate analysis of the electrical and analog/RF performance of the Dual Material (DM) junctionless (JL) Tree-FET. During the optimization process, various DC and analog/RF metrics were taken into account. It is observed that, as the gate length decreases (12 nm to 8 nm), there is an increment in drain induced barrier lowering (DIBL), switching ratio (Ion/Ioff), and subthreshold swing (SS). Conversely, reducing the size of TNS (and WNS) from 10 nm to 5 nm (and 20 nm to 10 nm, respectively) lead to notable improvements, with a 34.4% (21.01%) decrease in SS, 93.19% (58.86%) decrease in DIBL, and 98.6% (41.06%) increase in Ion/Ioff. Furthermore, the analog/RF performance metrics of the device is carefully examined across dimensional variations, revealing significant improvements at the optimal values. Additionally, the study extends to the evaluation of inverter circuit characteristics with DM JL Tree-FET. Remarkably, the static noise margin (SNM) and delay exhibit 337.3 mV and 3.053 ps, respectively, positioning the device as a prime candidate for applications demanding low power consumption and high-frequency operation in future technology nodes.