Avalanche ruggedness of SiC MOSFETs is of interest for many researchers since these devices are used in various applications. Existing inductances in the application circuits are the main reason that SiC MOSFETs may enter into avalanche condition. Under certain avalanche operating conditions, the device failure is inevitable. Avalanche failures of SiC MOSFET are usually classified into current-driven and temperature-driven categories. In this paper single-pulse avalanche behaviour of SiC trench MOSFETs of different voltage classes is experimentally investigated. The measurements were performed under various conditions of current, energy, avalanche time and temperature. To gain a better understanding of device failure and to correlate with the experimental results, 1D thermal simulations were carried out and critical chip temperatures which are expected to cause device failures are shown. Furthermore, repetitive avalanche measurements and parameter analyses are discussed. It is shown that SiC trench MOSFETs of different chip sizes show similar avalanche ruggedness. The critical chip temperatures were found to be similar for devices of all avalanche breakdown voltage classes. No drift of the relevant device parameters has been seen after repetitive avalanche measurements. The method used in this work can be used to predict the avalanche behaviour of SiC trench MOSFETs.
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