Chemical Vapor Deposition Method Research Articles

Study on Saturable Absorption Characteristics of Bi2Se3 Topological Insulators with Film Thickness Dependence and Its Laser Application

In our work, a multi-layer topological insulator (TI) Bi2Se3 thin film was prepared by the chemical vapor deposition method (CVD), and its saturable absorption and damage characteristics were experimentally studied. The results show that when the wavelength is 1064 nm, the saturable absorption parameters of TI: Bi2Se3 film, including modulation depth αs, non-saturable loss αns, and saturation power intensity Isat, increase with the increase in film thickness, and the damage threshold is inversely proportional to the film thickness. The thicker the film layer, the lower the damage threshold. Among them, modulation depth αs is up to 51.2%, minimum non-saturable loss αns is 1.8%, maximum saturation power intensity Isat is 560.8 kW/cm2, and the damage threshold is up to 909 MW/cm2. The influence of the controllable thickness of TI: Bi2Se3 film on passive Q-switching and mode-locking performance of laser is discussed and analyzed when TI: Bi2Se3 film is prepared by the CVD method as a saturable absorber (SA). Finally, the performance of TI: Bi2Se3 thin film applied to nanosecond laser isolation at the 1064 nm band is simulated and analyzed. It has the natural advantage of polarization independence, and the maximum isolation can reach 16.4 dB.

Facile synthesis of RGO/TiO2 heterojunction on SiNWs on Si chip for near infrared detector

Here, a ternary nanostructure-based heterojunction was developed for the detection of infrared (IR) radiation in near wavelength range. During materials synthesis process, silicon nanowires (SiNWs) were developed using metal assisted chemical etching (MACE) technique whereas reduced graphene oxide (RGO) sheets and TiO2 nanoparticles were synthesized by chemical vapour deposition (CVD) and solvothermal method, respectively. Thereafter, RGO/TiO2 nanostructure was deposited over SiNWs to form a heterojunction. To analyse the stoichiometry, morphology, and internal structure, various characterization techniques were performed such as scanning electron microscope (SEM), transmission electron microscope (TEM), Energy dispersive spectrometer (EDS), X-Ray Diffractometer (XRD), UV–Vis spectrophotometer and X-Ray Photoelectron Spectrometer (XPS). The RGO/TiO2@SiNWs nanostructure-based heterojunction was used for the detection of near IR radiation where the responsivity (R) was found to be 17.22 × 10−3 A/W and detectivity (D) was measured to be 0.23 × 1011 Jones with response time < 1 s and recovery time < 3 s. These results were found comparatively better than pristine RGO@Si and RGO@SiNWs nanostructure-based sensors used for the near IR detection under same conditions. The photocurrent response was also recorded with 5 ON/OFF cycles which depicted a good reproducibility of the prepared detector. Hence, the SiNWs on Si chip based highly sensitive and selective photodetector can be used to set a new milestone for various near IR applications.

Broadband and ascendant nonlinear optical properties of the wide bandgap material GaN nanowires

Gallium nitride (GaN) nanowire, as a type of wide bandgap nanomaterial, has attracted considerable interest because of its outstanding physicochemical properties and applications in energy storage and photoelectric devices. In this study, we prepared GaN nanowires via a facile chemical vapor deposition method and investigated their nonlinear absorption responses ranging from ultraviolet to near-infrared in the z-scan technology under irradiation by picosecond laser pulses. The experiment revealed that GaN nanowires exhibit remarkable nonlinear absorption characteristics attributed to their wide bandgap and nanostructure, including saturable absorption and reverse saturable absorption. When compared to bulk GaN crystals, the nanowires provide a richer and more potent set of nonlinear optical effects. Furthermore, we conducted an analysis of the corresponding electronic transition processes associated with photon absorption. Under high peak power density laser excitation, two-photon absorption or three-photon absorption dominate, with maximum modulation depths of 73.6%, 74.9%, 63.1% and 64.3% at 266 nm, 355 nm, 532 nm, and 1064 nm, respectively, corresponding to absorption coefficients of 0.22 cm/GW, 0.28 cm/GW, 0.08 cm/GW, and 2.82 ×10−4 cm3/GW2. At lower peak energy densities, GaN nanowires demonstrate rare and excellent saturation absorption characteristics at wavelength of 355 nm due to interband transitions, while saturable absorption is also observed at 532 nm and 1064 nm due to band tail absorption. The modulation depths are 85.2%, 41.9%, and 13.7% for 355 nm, 532 nm, and 1064 nm, corresponding to saturation intensities of 3.39 GW/cm2, 5.58 GW/cm2 and 14.13 GW/cm2. This indicates that GaN nanowires can be utilized as broadband optical limiters and high-performance pulse laser modulating devices, particularly for scarce ultraviolet optical limiters, and saturable absorbers for ultraviolet and visible lasers. Furthermore, our study demonstrates the application potential of wide bandgap nanomaterials in nonlinear optical devices.

Shear Field-Controlled Synthesis of Nitrogen-Doped Carbon Nanochains Forest with High-Density sp3 Defects for Efficient CO2 Electroreduction Reaction.

Defect engineering and nitrogen doping being effective strategies for modulating the surface chemical state of the carbon matrix have been widely explored to promote the catalytic activity in the territory of electrochemical energy storage and conversion devices. However, the controllable synthesis of carbon material with high-density specific defects and high nitrogen doping is still full of challenges. Here, we first synthesize one-dimensional necklace-like nitrogen-doped carbon nanochains (N-CNCs) with abundant defects on carbon fiber paper (CFP) by chemical vapor deposition (CVD) method. The resultant nanostructures are a bunch of interconnected carbon spheres with a hollow structure at the internode and present the complete one-dimensional nanochain configuration. Specifically, the N-CNCs with a corrugated surface possesses high content of sp3 defects (31.2%) and nitrogen (23.6 at %). Combining finite element analysis and experimental results, it reveals that the robust shear field generated by etching gas releasing from thermal decomposition of melamine in situ modulates the CVD process via changing the size and force environment of the metal catalyst droplets for formation of N-CNCs. Benefiting from the high ratio of sp3/sp2 and nitrogen doped on the surface, the N-CNCs@CFP displays a superior electrocatalytic performance for CO2RR, delivering CO Faradaic efficiency of 95.9% and a current density of 23.2 mA cm-2 at -0.86 V vs RHE. This work provides promising synthesis strategy and some inspirations for construction of ultradense and specific defects coupling with nitrogen doping sites into carbon materials to achieve high-efficiency electrocatalysis applications.

Interfacial Si–O coordination for inhibiting the graphite phase enables superior SiC/Nb heterostructure joining by AuNi

The reaction between SiC and Ni-based brazing alloy is extremely intense, where the brittle Ni–Si compound and accompanied dissociate graphite phase as the interfacial reaction product in the joint damage the mechanical properties. In this study, the design of "graphite-controlled" heterogeneous integration component structure on SiC surface is developed to weaken the intense reaction of Ni and SiC. The high-quality surface Si–O coordination was successfully achieved by plasma-enhanced chemical vapor deposition (PECVD) method at relatively low temperature on SiC, which increases the Si bond strength due to that the higher binding energy of Si–O (451 kJ/mol) than that of Si–C (347 kJ/mol). SiO2 films enhance the mechanical properties of the joint through macro-weak side interface interlocking and micro-stress mismatch regulation. The shear strength of SiC/Nb heterostructure joints by AuNi alloy was increased by 44 %, which paves an inspiring way for boosting heterogeneous integration of SiC ceramic components.

Picometer-Scale Atomic Shifts Governing Subdisordered Structures in Diamond.

Diamond is considered the most promising next-generation semiconductor material due to its excellent physical characteristics. It has been more than three decades since the discovery of a special structure named n-diamond. However, despite extensive efforts, its crystallographic structure and properties are still unclear. Here, we show that subdisordered structures in diamond provide an explanation for the structural feature of n-diamond. Monocrystalline diamond with subdisordered structures is synthesized via the chemical vapor deposition method. Atomic-resolution scanning transmission electron microscopy characterizations combined with the picometer-precision peak finder technology and diffraction simulations reveal that picometer-scale shifts of atoms within cells of diamond govern the subdisordered structures. First-principles calculations indicate that the bandgap of diamond decreases rapidly with increasing shifting distance, in accordance with experimental results. These findings clarify the crystallographic structure and electronic properties of n-diamond and provide new insights into the bandgap adjustment in diamond.

Micropatterned Polymer Nanoarrays with Distinct Superwettability for a Highly Efficient Sweat Collection and Sensing Patch.

Wearable sweat sensor offers a promising means for noninvasive real-time health monitoring, but the efficient collection and accurate analysis of sweat remains challenging. One of the obstacles is to precisely modulate the surface wettability of the microfluidics to achieve efficient sweat collection. Here a facile initiated chemical vapor deposition (iCVD) method is presented to grow and pattern polymer nanocone arrays with distinct superwettability on polydimethylsiloxane microfluidics, which facilitate highly efficient sweat transportation and collection. The nanoarray is synthesized by manipulating monomer supersaturation during iCVD to induce controlled nucleation and preferential vertical growth of fluorinated polymer. Subsequent selective vapor deposition of a conformal hydrogel nanolayer results in superhydrophilic nanoarray floor and walls within the microchannel that provide a large capillary force and a superhydrophobic ceiling that drastically reduces flow friction, enabling rapid sweat transport along varied flow directions. A carbon/hydrogel/enzyme nanocomposite electrode is then fabricated by sequential deposition of highly porous carbon nanoparticles and hydrogel nanocoating to achieve sensitive and stable sweat detection. Further encapsulation of the assembled sweatsensing patch with superhydrophobic nanoarray imparts self-cleaning and water-proof capability. Finally, the sweat sensing patch demonstrates selective and sensitive glucose and lactate detection during the on-body test.

Significantly improved optoelectronic performances of two-dimensional WS2(Er3+)/WSe2(Er3+) van der waals heterojunctions

Two-dimensional heterostructures with excellent properties are potential for high performance optoelectronic applications, since the ultimate thickness limit is possible to be broken with the advent of atomically thin materials. Yet the studies have also been largely constrained by the low physical doping space and absorption rates due to the atomic-thickness layers, and the efforts for high carrier concentrations and gain remain a significant challenge. Herein, high concentration of Er3+ ions are in-situ doped in WS2 and WSe2 atomic layers by chemical vapor deposition (CVD) method. The prepared layers are characterized by atomic force microscopy, transmission electron microscopy, photoluminescence (PL) spectroscopy, and Raman spectroscopy, respectively. 13–14 at% of Er3+ doping concentration in WSe2 and WS2 are examined by energy dispersive spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) with high consistency. A microregion fixed-point transfer technique is used to transfer the WS2(Er3+) monolayers onto the WSe2(Er3+) monolayers to form vertical van der Waals heterojunctions. Excellent performances are measured from the WS2(Er3+)/WSe2(Er3+) photodetector with the photoresponsivity of up to 67.4 A/W, external quantum efficiency of 13,202 %, and detectivity of 7.07 × 1011 Jones. Our results prove the effectiveness of Er3+ in-situ doping in WS2(Er3+)/WSe2(Er3+) heterojunctions for high-performance photodetectors.

Controlled growth of 3R phase niobium diselenide and its properties

Inversion symmetry broken 3R phase transition metal dichalcogenides (TMDs) show fascinating prospects in spintronics, valleytronics, and nonlinear optics. However, the controlled synthesis of 3R phase TMDs is still a great challenge. In this work, two-dimensional 3R-NbSe2 single crystals up to 0.2 mm were synthesized for the first time through chemical vapor deposition method by designing a space-confined system. The crystal size and morphology can be controlled by the location of the stacked substrates and the amount of the Nb2O5 precursor. Scanning transmission electron microscopy and Raman measurements reveal the NbSe2 exhibits a pure 3R stacking mode with relatively weak interlayer van der Waals interactions. Importantly, 3R-NbSe2 shows obvious second harmonic generation signal which intensity intensified as thickness increases. Density functional theory calculations and optical absorption demonstrate the coexistence of metallic and semiconducting optical properties of 3R-NbSe2. We designed a NbSe2/WS2/NbSe2 photodetector utilizing the metallicity of 3R-NbSe2, which shows good performance especially an ultrafast response (6–7 μs, 0.5 ms–7.9 s for Au electrodes in literature). The proposed strategy and findings are of great significance for the growth of many other 3R-TMDs and applications of nonlinear optical and ultrafast devices.

Freestanding 3D graphite foam prepared by compressed growth template for superior electro-photo thermal performance

As a promising three-dimensional (3D) graphene architecture, graphene foam has excellent structural, electrical and thermal properties. However, due to the growth template limitation of commercial nickel/copper foam, graphene foam prepared by chemical vapor deposition (CVD) has a fixed 3D framework architecture, which limits its performance and application scenarios. In this paper, independent 3D graphite foam (GF) with different thickness and longitudinal compressibility was prepared by CVD method, and it was confirmed that mechanical compression of nickel foam template before graphite film deposition had a positive effect on the electrothermal, photothermal and mechanical properties of GF. At a low driving voltage of 3 V, the heating temperature of compressed GF with a low density of 8.9 mg/cm3 and a high porosity of 99.59 % can reach nearly 600 °C, which is nearly 250 °C higher than that of uncompressed GF. The excellent electrothermal performance of compressed GF is mainly attributed to the high crystallinity and thicker thickness (150–350 nm) of the graphite layers that make up the 3D framework, thus resulting in higher electrical conductivity. Under 1 and 2 sun illumination, the temperature of compressed GF can reach 83 °C and 109 °C respectively, which is 4–7 °C higher than that of the original GF. Compressed GF has better electrothermal, photothermal and radiant heating properties than traditional graphene/graphite foam and 2D graphene/graphite film. It not only has great application potential in high-efficient and energy-saving high-temperature electric heaters and photothermal converters, but also can be used as conductive supports or fillers with better performance, and has broad application prospects in flexible electronics, household appliances, artificial intelligence, medical care and other fields.

Tailored multi-layer graphene arrays for precision detection of neurotransmitter

The development of sensitive dopamine (DA) sensors has significantly contributed to our understanding of DA-related disorders and has enabled advancements in medical diagnostics and neuroscience research. Therefore, in the present work, a novel electrochemical sensing platform was developed using multi-layer graphene arrays (MGA) modified electrodes for the selective detection of DA. The preparation of high-quality MGA was achieved using the plasma-enhanced chemical vapor deposition (PCVD) method and was confirmed using various physiochemical techniques such as transmission electron microscopy and Raman spectroscopy. The modified electrode, made of MGA, was utilized for the electrochemical detection of DA using cyclic voltammetry and amperometry i-t methods. DA’s electrochemical oxidation response and sensitivity at the MGA electrode were ≈9 and 3 times higher than observed with unmodified and commercially available multi-layer graphene-modified electrodes. The MGA sensor exhibited excellent analytical parameters for DA detection, including a wide linear range of up to 172.1 μM and a low detection limit of 1.3 nM. The sensor also demonstrated remarkable sensitivity, storage stability, and selectivity for DA detection, making it highly suitable for accurately detecting DA in medical diagnostics and neuroscience research. Furthermore, the practical application of the MGA sensor for DA detection was demonstrated in various real samples.

First principles investigation of ammonia borane decomposition for understanding h-BN growth on the copper surface

Ammonia borane (AB) is a highly promising precursor for the large-scale growth hexagonal boron nitride (h-BN) via chemical vapor deposition (CVD) methods. However, the unclear decomposition mechanism of precursor molecules on the Cu surface poses a great challenge for understanding the CVD growth process of h-BN. In this work, we addressed this issue by conducting first-principles calculations to investigate the decomposition mechanism of AB on the Cu surface. Our calculations revealed that AB preferentially decomposed into ammonia and borane. Further analysis demonstrates that borane exhibits a higher dehydrogenation rate than ammonia, suggesting a single atom self-assembly growth mode of h-BN under B-rich conditions. Our calculations revealed the formation of BNHx-related byproducts during h-BN growth using AB as a precursor, resulting from the intricate decomposition of AB on the Cu surface under CVD conditions. Our findings have significant implications for comprehending and controlling the growth of h-BN in CVD process.

Study on heat-treated pyrolytic carbon deposited from methane on directly heated carbon fibres

The study investigated the morphology, microstructure, structure, texture, and mechanical properties of heat-treated at 1600 °C and 2000 °C pyrolytic carbon (PyC) deposited from methane using various methods such as scanning electron microscopy (SEM), X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), Raman spectroscopy, and ultrasonic dynamic measurements of Young's modulus. The PyC was synthesised at 1100 °C using a chemical vapour deposition (CVD) method with direct electrical heating of the two types of carbon fibres (CFs). The results showed that the PyC had a low- and medium-texture (LT and MT PyC). Analysis of the graphitization trajectory allowed the determination of structural changes in the material as a function of temperature, including the growth of crystallites and an increase in the crystallinity proportion without the significant rearrangement within PyC. The crystallite size and the number of interstitial defects has increased with temperature that controlled mechanical properties. Therefore, based on the results obtained, the most suitable composites for further research in the context of electrodes for stimulation of nervous tissue were obtained at the temperature of their synthesis, i.e. at 1100 °C.

High-light-yield and fast-response β-Ga2O3–Al2O3 thick-film scintillators epitaxially grown via chemical vapor deposition

β-gallia (β-Ga2O3) has been investigated for adoption in power semiconductor wafers; however, it is a promising scintillating material for X-ray detection screens. Thus, the research on methods for growing β-gallia crystals has attracted considerable attention. Herein, 15-μm thick Ga2O3–Al2O3 solid solution films with β-gallia structure were synthesized using metal–organic chemical vapor deposition (CVD) at deposition rate of 15 μm h−1. A high scintillation light yield of 5400 photons per 5.5 MeV and a fast decay response of 5.1 ns of the produced films were observed, which were comparable or superior to those of the β-Ga2O3 single crystals and transparent ceramics. CVD method proved advantageous for the rapid synthesis of micrometer-thick Ga2O3-based scintillation screens.

Experimental characterization and crystal plasticity finite element simulation of the microstructural evolution in CVD tungsten during multi-step rolling

Atmospheric pressure chemical vapor deposition (CVD) is a promising technique for the preparation of tungsten products with high purity, high density and almost unlimited thickness. The tungsten prepared by using the CVD method (CVD-W) usually has a columnar coarse grain microstructure with strong preferred orientations. Multi-step rolling at gradually decreased operating temperatures is an effective method to lower the ductile-to-brittle transition temperature in pure tungsten. So far, the microstructural evolutions of CVD-W during the multi-step rolling processing is still unclear. In this study, the microstructure evolution and texture development of CVD-W during multi-step rolling are investigated by the coupling of electron backscattering diffraction technique and full-field crystal plasticity finite element simulations. After multi-step rolling, the sample exhibits through-thickness texture gradient. A layered structure with elongated 〈100〉 // ND and 〈111〉 // ND grains is observed in the central region and Goss orientation mainly appears in the surface region. Crystal plasticity finite element simulations show that {001}〈110〉 is a stable orientation under the plane strain compression, which is realized by the rotation of {100} grains around ND. Meanwhile, the shear flow promotes the rotation of {100} grains around TD, leading to the formation of 〈111〉 // ND orientation. 〈110〉 // ND orientation is observed near the shear bands, which is generated through the rotation of {100} grains around <100> // RD axis. The rolled CVD-W exhibits crystallographic orientation dependent recrystallization behavior, which is related to the orientation dependent distortion energy generated in the rolling processing. Our studies provide fundamental insights into the microstructure evolution and texture development of CVD-W under the multi-step rolling processing.

Depressed-cladding thulium-doped fiber for applications below 1800 nm

We present a thulium-doped silica fiber, featuring a depressed cladding, for applications at wavelengths below 1800 nm. The depressed cladding is used as a distributed filter suppressing amplified spontaneous emission at longer wavelengths, which helps promote emission at shorter wavelengths. We describe the fiber design process that was carried out by using a combination of numerical methods. The fiber was prepared in-house by a combination of the standard modified chemical vapor deposition method and nanoparticle doping. We demonstrate the effectiveness and tunability of ASE filtering, which is influenced by fiber bend radius and its variation.

Advancement in Carbon Nanoparticle Synthesis and Their Application: A Comprehensive Review

The global population gradually increase at an alarming state, which would increase demand for food globally. This increasing use of pesticides and fertilizers. In order to meet this demand, an overview of the numerous applications of nanotechnology for agriculture. Various nanomaterials like nanofertilizers and pesticides enhance soil fertility and crop productivity. However, excessive chemical fertilizer use as per FAO, 2017. Among these, the nanotechnology has wide range of applications in healthcare and medicines, diagnosis etc. Recently, carbon nanoparticles (CNPs) play a significant role in various fields. Carbon nanoparticles (CNPs) represent innovative nanostructures. These can be synthesized by different methods, green synthesis as well as chemical synthesis such as arch discharge method, laser ablation method, chemical vapour deposition method etc. The advancement of CNPs entails the exploration of diverse synthetic techniques and exploration of various application due to their chemical and physical properties in healthcare, agriculture (for delivery of agrochemicals) etc. These are also used in plant growth enhancement and resistance to stresses. However, challenges related to precisely defining CNP structures and ensuring property uniformity remain inadequately addressed and lack detailed study. In this review article we emphasize methodologies for the synthesis of CNPs by various chemical methods and also include their applications in therapeutics, pharmaceuticles, sensing and agriculture.

The GeSe/SnSe heterojunction photodetector with self-powered characteristics and high infrared response performance

We present a GeSe/SnSe van der Waals heterojunction fabricated using the wet transfer technique. GeSe and SnSe were synthesized via a low-temperature and atmospheric-pressure chemical vapor deposition method. The GeSe/SnSe heterostructure photodetector demonstrates remarkable rectification characteristics, boasting a rectification ratio of 102, along with an exceptionally low dark current, indicating minimal power consumption. Furthermore, it exhibits a broad optical response, spanning from the visible spectrum (450 nm) to the near-infrared (1064 nm). Under 808 nm laser illumination and reverse bias, the device achieves a responsivity of 19.82 A/W, a detectivity of 4.74 × 109 Jones, and an external quantum efficiency of 3048.32%. Notably, the GeSe/SnSe heterojunction photodetector also exhibits self-powered characteristics, with a responsivity of 0.11 mA/W and a detectivity of 5.44 × 106 Jones at zero bias voltage, accompanied by a fast response time of 23/61 ms (rise/fall). These findings underscore the effectiveness of the GeSe/SnSe heterojunction as a strategy for near-infrared photodetectors to simultaneously achieve low power consumption, high photoresponsivity, and self-powered photodetection, which is promising for optoelectronic device applications.

Single-mode lasers based on pseudo-cubic perovskite CsPbBr3 microcrystals

The performance of perovskite lasers is often influenced by both the gain medium and the optical cavity. Therefore, a cavity with a unique structure and efficient feedback is essential for studying high performance of lasers. We successfully synthesized smooth-surface pseudo-cubic CsPbBr3 microcrystals on a silicon substrate by chemical vapor deposition method. The pseudo-cubic CsPbBr3 microcrystals exhibit a microcavity structure resembling a cube, where three-dimensional total internal reflection can be achieved within the microcavity. This provides a highly promising foundation for exploring high-performance lasers. The pseudo-cubic CsPbBr3 microcrystals demonstrate stimulated emission at a wavelength of 536.2 nm, achieving a full width at half maximum of 0.47 nm for a single-mode laser at room temperature. Additionally, the pseudo-cubic CsPbBr3 microcrystals exhibit remarkable stability that optical properties remain largely unchanged after long-term exposure to air. The perovskite microcavity with this novelty structure has been rarely reported in previous studies, and it also serves as an ideal cavity for lasers with broad prospects for integrated optoelectronic devices due to excellent optical properties and significant stability. This research not only deepens our understanding of unconventional CsPbBr3 microlasers but also provides strong support for future related research and technological development.

Synthesis and characterization of 1T′ and 2H phase coexistence 2D Re1-xMoxS2 alloy films and their application for photodetectors

Alloying is considered an efficient strategy to engineer the crystal structure, modulate the energy band structure and charge carrier concentration by adjusting the elemental composition of transition metal dichalcogenides (TMDs). Here, the two-dimensional (2D) Re1-xMoxS2 alloy films with tunable composition and phase structure were prepared on mica substrates by chemical vapor deposition (CVD) method. The back-gated field effect transistors (FETs) based on 2D Re1-xMoxS2 alloy films were prepared. The Mo component x in 2D Re1-xMoxS2 alloy films was varied from 0, 0.2, 0.4, 0.5, 0.6, 0.8–1 by changing mole ratio of ReO3 to MoO3 while the total number of moles remains the same. The Mo composition-dependent morphology phase structure, electrical transport properties and photoelectric properties of Re1-xMoxS2 alloy films were studied in detail. The results indicate that the 1T′ phase Mo-doped ReS2 and 2H phase Re-doped MoS2 coexist, and the ratio of 2H phase Re-doped MoS2 to 1T′ phase Mo-doped ReS2 can be modulated by changing Mo component x in Re1-xMoxS2 alloy films. 1T′ phase Mo-doped ReS2 exhibits the p-type conduction feature while 2H phase Re-doped MoS2 shows the n-type conduction behavior. The Re1–xMoxS2 alloy devices show obvious photoelectric response to 405, 532, 635 and 808 nm lasers irradiation. The Re0.5Mo0.5S2 (x= 0.5) has the maximum responsivity R of 1024.1 mA/W and external quantum efficiency EQE of 239.3% under 532 nm laser irradiation.