First principles investigation of ammonia borane decomposition for understanding h-BN growth on the copper surface

Abstract

Ammonia borane (AB) is a highly promising precursor for the large-scale growth hexagonal boron nitride (h-BN) via chemical vapor deposition (CVD) methods. However, the unclear decomposition mechanism of precursor molecules on the Cu surface poses a great challenge for understanding the CVD growth process of h-BN. In this work, we addressed this issue by conducting first-principles calculations to investigate the decomposition mechanism of AB on the Cu surface. Our calculations revealed that AB preferentially decomposed into ammonia and borane. Further analysis demonstrates that borane exhibits a higher dehydrogenation rate than ammonia, suggesting a single atom self-assembly growth mode of h-BN under B-rich conditions. Our calculations revealed the formation of BNHx-related byproducts during h-BN growth using AB as a precursor, resulting from the intricate decomposition of AB on the Cu surface under CVD conditions. Our findings have significant implications for comprehending and controlling the growth of h-BN in CVD process.