Chemical Vapor Deposition Chamber Research Articles

Development and Characterization of N2O-Plasma Oxide Layers for High-Temperature p-Type Passivating Contacts in Silicon Solar Cells.

Full-area passivating contacts based on SiOx/poly-Si stacks are key for the new generation of industrial silicon solar cells substituting the passivated emitter and rear cell (PERC) technology. Demonstrating a potential efficiency increase of 1 to 2% compared to PERC, the utilization of n-type wafers with an n-type contact at the back and a p-type diffused boron emitter has become the industry standard in 2024. In this work, variations of this technology are explored, considering p-type passivating contacts on p-type Si wafers formed via a rapid thermal processing (RTP) step. These contacts could be useful in conjunction with n-type contacts for realizing solar cells with passivating contacts on both sides. Here, a particular focus is set on investigating the influence of the applied thermal treatment on the interfacial silicon oxide (SiOx) layer. Thin SiOx layers formed via ultraviolet (UV)-O3 exposure are compared with layers obtained through a plasma treatment with nitrous oxide (N2O). This process is performed in the same plasma enhanced chemical vapor deposition (PECVD) chamber used to grow the Si-based passivating layer, resulting in a streamlined process flow. For both oxide types, the influence of the RTP thermal budget on passivation quality and contact resistivity is investigated. Whereas the UV-O3 oxide shows a pronounced degradation when using high thermal budget annealing (T > 860 °C), the N2O-plasma oxide exhibits instead an excellent passivation quality under these conditions. Simultaneously, the contact resistivity achieved with the N2O-plasma oxide layer is comparable to that yielded by UV-O3-grown oxides. To unravel the mechanisms behind the improved performance obtained with the N2O-plasma oxide at high thermal budget, characterization by high-resolution (scanning) transmission electron microscopy (HR-(S)TEM), X-ray reflectometry (XRR) and X-ray photoelectron spectroscopy (XPS) is conducted on layer stacks featuring both N2O and UV-O3 oxides after RTP. A breakup of the UV-O3 oxide at high thermal budget is observed, whereas the N2O oxide is found to maintain its structural integrity along the interface. Furthermore, chemical analysis reveals that the N2O oxide is richer in oxygen and contains a higher amount of nitrogen compared to the UV-O3 oxide. These distinguishing characteristics can be directly linked to the enhanced stability exhibited by the N2O oxide under higher annealing temperatures and extended dwell times.

Strategies for Managing Perfluorinated Compounds (PFCs) in Semiconductor Manufacturing: A Supply Chain and Public Management Approach

The semiconductor industry stands as a pillar of modern technological progression, yet it grapples with significant environmental challenges, predominantly due to the emissions of perfluorinated compounds (PFCs). PFCs, critical in semiconductor manufacturing processes like dry etching and chemical vapor deposition (CVD) chamber cleaning, present a dire environmental concern given their high Global Warming Potential (GWP) and persistent nature. This treatise delves into a comprehensive analysis of how supply chain management and astute public policy can mitigate the deleterious impact of PFCs. It methodically scrutinizes the current challenges in curbing these emissions, assesses the efficacy of prevailing strategies, and champions the inception of trailblazing abatement technologies alongside forward-thinking regulatory frameworks. The research presents a critical evaluation of the interplay between stringent environmental requirements and the semiconductor industry's economic and innovation imperatives. It underscores the intricacies of aligning the sector's operations with sustainable practices while maintaining its economic vitality and capacity for innovation. Through a meticulous exploration of advanced material alternatives, state-of-the-art emissions control technologies, and progressive policy initiatives, this paper endeavors to steer the semiconductor industry towards a future where environmental sustainability becomes a cornerstone of its developmental ethos without stifling its technological evolution or economic robustness.

CVD Grown CNTs-Modified Electrodes for Vanadium Redox Flow Batteries.

Vanadium redox flow batteries (VRFBs) are of considerable importance in large-scale energy storage systems due to their high efficiency, long cycle life and easy scalability. In this work, chemical vapor deposition (CVD) grown carbon nanotubes (CNTs)-modified electrodes and Nafion 117 membrane are utilised for formulating a vanadium redox flow battery (VRFB). In a CVD chamber, the growth of CNTs is carried out on an acid-treated graphite felt surface. Cyclic voltammetry of CNT-modified electrode and acid-treated electrode revealed that CNTs presence improve the reaction kinetics of V3+/V2+ and VO2+/VO2+ redox pairs. Battery performance is recorded for analysing, the effect of modified electrodes, varying electrolyte flow rates, varying current densities and effect of removing the current collector plates. CNTs presence enhance the battery performance and offered 96.30% of Coulombic efficiency, 79.33% of voltage efficiency and 76.39% of energy efficiency. In comparison with pristine electrodes, a battery consisting CNTs grown electrodes shows a 14% and 15% increase in voltage efficiency and energy efficiency, respectively. Battery configured without current collector plates performs better as compared to with current collector plates which is possibly due to decrease in battery resistance.

Performance enhancement in spin transfer torque magnetic random access memory through in situ cap layer optimization

Magnetic tunnel junctions (MTJs), a key component of spin transfer torque magnetic random access memory, are typically fabricated using two main processes: plasma etching and in situ protective cap layer deposition. It has been found that while the etching process predominantly affects MTJ performance, the cap layer process can further enhance electrical and magnetic properties. In this study, we achieved performance improvements in MTJs by optimizing the cap layer deposition process through various experimental methods, such as modifying the gas mixtures used in the deposition process and incorporating a novel post-plasma treatment. During the deposition of the silicon nitride (SiNx) cap layer, N-rich dissociated compounds can induce passivation of the MTJ layer, leading to additional loss of tunneling magnetoresistance (TMR) and coercive field (Hc). To circumvent this challenge, we prioritized modifying the gas ratio in the SiNx deposition process. Additionally, hydrogen introduced during SiNx deposition can penetrate the MTJ pillars and degrade their properties. To mitigate this, we developed a novel post-nitrogen plasma treatment in a plasma-enhanced chemical vapor deposition chamber, which effectively desorbed the excess hydrogen from the MTJ film stack. As a result of these optimized processes, the TMR loss, compared to a blanket wafer, was reduced from 25% to 8%, and Hc increased by up to 33% for the same stack, achieving significant performance enhancements.

Analytical modeling of nucleation and growth of graphene layers on CNT array and its application in field emission of electrons

Carbon Nanotube (CNT) arrays and graphene have undergone several investigations to achieve efficient field emission (FE) owing to CNT’s remarkable large aspect ratio and graphene’s exceptional FE stability. However, when dense CNT arrays and planar graphene layers were used as field emitters, their field enhancement factor reduced dramatically. Therefore, in this paper, we numerically analyze the growth of a dense CNT array with planar graphene layers (PGLs) on top, resulting in a CNT-PGL hybrid and the associated field enhancement factor. The growth of the CNT array is investigated using Plasma Enhanced Chemical Vapor Deposition (PECVD) chamber in C2H2/NH3 environment with variable C2H2 flow, Ni catalyst film thickness, and substrate temperature followed by PGL precipitation on its top at an optimized cooling rate and Ni film thickness. The analytical model developed accounts for the number density of ions and neutrals, various surface elementary processes on catalyst film, CNT array growth, and PGLs precipitation. According to our investigation, the average growth rate of CNTs increases and then decreases with increasing C2H2 flow rate and catalyst film thickness. CNTs grow at a faster rate when the substrate temperature increases. Furthermore, as the chamber temperature is lowered from 750 °C to 250 °C in N2 environment and Ni film thickness grows, the number of the graphene layers increases. The field enhancement factors for the CNT array and hybrid are then calculated based on the optimal parameter values. The average height of the nanotubes, their spacing from one another, and the penetration of the electric field due to graphene coverage are considered while computing the field enhancement factor. It has been found that adding planar graphene layers to densely packed CNTs can raise its field enhancement factor. The results obtained match the current experimental observations quite well.

Use of plasma process diagnostic sensors for the monitoring of in situ dry cleaning of plasma enhanced chemical vapor deposition chamber

A potential source of particle contamination due to poorly maintained PECVD chamber condition forces to perform in situ dry cleaning also actively employed before the wet-cleaning chamber maintenance period. In this paper, we demonstrate the use of plasma process diagnostic sensors, optical emission spectroscope, and quadrupole mass spectrometer for in situ plasma monitoring of the dry-cleaning step. It is worthwhile to know the thin film residue on the chamber’s inner wall, but it is difficult to collect the deposited thin film sample from the wall since the preparation of the sample from the equipment is impossible. To alleviate the concern, we prepared silicon wafer samples mounted on the chamber sidewall over the prolonged exposure of the SiO2 deposition process, and the collected sensory data were investigated under the dry-cleaning condition. The residue film obtained through the experiment was characterized by Fourier transform infrared, x-ray photoelectron spectroscopy, atomic force microscopy, and scanning electron microscopy. We found a useful insight into the chamber dry-cleaning end point detection application through residual gas analysis, and the results contribute to process engineers setting up the in situ dry-cleaning recipe to make sure that subsequent deposition can be consistently maintained.

Two-step synthesis of antimony sulfide thin films: enhancement in physical properties through sulfurization

Recently, there has been an increase in the use of antimony sulfide (Sb2S3) in Si-based tandem solar cells as a potential absorber material for top sub-cells. The choice of the material stems from the favoured properties such as appropriate bandgap, simple binary composition, nontoxic elements, and long-term stability. However, the physical properties and practical applicability of these materials depend largely on their synthesis conditions. In this work, we investigate the role of sulfurization on the structural, morphological, compositional, and optical properties of Sb2S3 thin films deposited on soda-lime glass via a thermal evaporation technique. Sulfurization was performed on the as-prepared thin films in a customized Chemical Vapor Deposition (CVD) chamber at five different temperatures. Analysis of the crystallinity of the film using the x-ray diffraction technique illustrates the transformation of the film from impure, poor crystalline phase to phase-pure, and highly crystalline orthorhombic structure due to sulfurization. Scanning electron microscopic investigations of the samples revealed better grains with nanorods on the surface at a temperature of 400 °C. For the samples investigated here, the energy values estimated via density functional theory (DFT) calculations agreed well with the experimental data obtained from UV-visible absorption spectral studies. Additionally, it was observed that the desired near-stoichiometric Sb2S3 thin films could be achieved via sulfurization, and the presence of Sb2S3 in all samples was confirmed via Raman spectroscopic studies. Additionally, the defects and trap states of the prepared films were investigated using photoluminescence studies, and donor and acceptor defects were identified. Our study revealed that sulfur rich Sb2S3 films prepared at a sulfurization temperature of 400 °C produced the desired structure, morphology, and optical qualities for future photovoltaic applications.

One-Step Synthesis and Operando Electrochemical Impedance Spectroscopic Characterization of Heterostructured MoP-Mo2N Electrocatalysts for Stable Hydrogen Evolution Reaction.

This study presents a novel synthesis of self-standing MoP and Mo2N heterostructured electrocatalysts with enhanced stability and catalytic performance. Facilitated by the controlled phase and interfacial microstructure, the seamless structures of these catalysts minimize internal resistivity and prevent local corrosion, contributing to increased stability. The chemical synthesis proceeds with an etching step to activate the surface, followed by phosphor-nitriding in a chemical vapor deposition chamber to produce MoP-Mo2N@Mo heterostructured electrocatalysts. X-ray diffraction analyses confirmed the presence of MoP, Mo2N, and Mo phases in the electrocatalyst. Morphology studies using scanning electron microscopy characterize the hierarchical growth of structures, indicating successful formation of the heterostructure. X-ray photoelectron spectroscopy (XPS) analyses of the as-synthesized and postcatalytic activity samples reveal the chemical shift in terms of the binding energy (BE) of the Mo 3d XPS peak, especially after catalytic activity. The XPS BE shifts are attributed to changes in the oxidation state, electron transfer, and surface reconstruction during catalysis. Electrochemical evaluation of the catalysts indicates the superior performance of the MoP-Mo2N@Mo heterostructured catalyst in hydrogen evolution reactions (HER), with lower overpotentials and enhanced Tafel slopes. The stability tests reveal changes in double layer capacitance over time, suggesting surface reconstruction and an increased active surface area during catalysis. Operando electrochemical impedance spectroscopy (EIS) further elucidates the dynamic changes in resistance and charge transfer during HER. Overall, a comprehensive understanding of the synthesis, characterization, and electrochemical behavior of the developed MoP-Mo2N@Mo heterostructured electrocatalyst, as presented in this work, highlights its potential utilization in sustainable energy applications.

Advanced approach of bulk (111) 3C-SiC epitaxial growth

3C-SiC films grown on (111) Si substrates exhibit poor crystal quality and experience wafer cracks and bowing preventing access to bulk growth. This work reports innovative Chemical Vapor Deposition (CVD) growth methodology on 4 in. Si substrates which allowed the growth of 230 mm thick layer of (111) 3C-SiC through the melting of the Si substrate in the CVD chamber and the adoption of the resulting free standing 3C-SiC for the growth of bulk (111) 3C-SiC layer under high N fluxes. From the molten KOH etching and subsequent SEM investigation it has been ascertained that with a N2 flux of 1600 sccm there is a significant reduction in the concentration of stacking faults (SFs) from (7.16 ± 0.04) × 103 cm−1 to (0.4 ± 0.3) × 103 cm−1. This reduction is consistent with the cross section m-PL response displaying steep and uniform increase in the intensity of the band-edge signal a factor 10 higher on the surface with respect to the equal (100) 3C-SiC grown thickness. Furthermore, the emission attributed to point defects is considerably lower in (111) 3C-SiC. From Scanning Transmission Electron Microscopy (STEM) investigation it appears evident how the typical mechanism valid in (100) growths consisting in the mutual closure of SFs coming from opposing {111} planes that give rise to Lomer and l-shaped dislocations is replaced by a different panorama of evolution. Indeed, it is shown how the SFs shred but do not interrupt each other during growth. Furthermore, dropping in the number of atomic planes composing SFs layers appears to be a key phenomenon leading to both the shrinkage of the number of SF atomic layers as well as to the SF self-closure. High Angle Annular Dark Field-Scanning Transmission Electron Microscopy (HAADF-STEM) attested how the crystal tends to smooth out the lattice mismatch until the SF is suppressed. Because of the foregoing, the mechanisms of evolution of the defects in (111) 3C-SiC revealed in this study, demonstrates how the growth parameters must be matched with the kinetics of the defects in order to endorse (111) 3C-SiC adoption in high performing devices.

An innovative gas inlet design in a microwave plasma chemical vapor deposition chamber for high-quality, high-speed, and high-efficiency diamond growth

A novel design of the gas inlet system in a diamond microwave plasma chemical vapor deposition growth chamber has been reported in this paper. The design is targeting for high-quality, high-speed, and high-efficiency diamond material fabrication. By introducing a gas inlet hole into the susceptor, we expand the ways of gas introduction for diamond growth. After extensive numerical and experimental investigation, we have found that the introduction of methane and doping gas inlet from the hole of below while the hydrogen from the top is feasible for realizing the target. The growth and doping species could be confined around the substrate, making efficient usage of the precursors. The plasma state change caused by the difference of the gas inlet modes has been ascribed to the resulted gas distribution in the chamber. The measured growth rate has been increased to 32 μm h−1, which is 16 times higher than traditional gas inlet configuration. Meanwhile, a large improvement of the nitrogen doping concentration has been achieved. Besides, with the increase of growth rate and nitrogen incorporation efficiency, the crystal quality and surface morphology keep in an acceptable degree. In this mode, the dual gas flow system can perfectly solve the contradiction among the crystal quality, growth rate, and doping efficiency, commonly existing during the material fabrication process, the chamber contamination could be significantly suppressed due to the constrained distribution of methyl and doping species, making the fabrication cost much lower. The results of repetitive experiments indicate that other residual impurities present in the chamber of microwave plasma chemical vapor deposition could likely regulate the threshold concentration of nitrogen required for accelerating the growth rate during the nitrogen doped diamond growth, which have a significant effect on the diamond growth.

Diagnosing Time-Varying Harmonics in Low-k Oxide Thin Film (SiOF) Deposition by Using HDP CVD.

This study identified time-varying harmonic characteristics in a high-density plasma (HDP) chemical vapor deposition (CVD) chamber by depositing low-k oxide (SiOF). The characteristics of harmonics are caused by the nonlinear Lorentz force and the nonlinear nature of the sheath. In this study, a noninvasive directional coupler was used to collect harmonic power in the forward and reverse directions, which were low frequency (LF) and high bias radio frequency (RF). The intensity of the 2nd and 3rd harmonics responded to the LF power, pressure, and gas flow rate introduced for plasma generation. Meanwhile, the intensity of the 6th harmonic responded to the oxygen fraction in the transition step. The intensity of the 7th (forward) and 10th (in reverse) harmonic of the bias RF power depended on the underlying layers (silicon rich oxide (SRO) and undoped silicate glass (USG)) and the deposition of the SiOF layer. In particular, the 10th (reverse) harmonic of the bias RF power was identified using electrodynamics in a double capacitor model of the plasma sheath and the deposited dielectric material. The plasma-induced electronic charging effect on the deposited film resulted in the time-varying characteristic of the 10th harmonic (in reverse) of the bias RF power. The wafer-to-wafer consistency and stability of the time-varying characteristic were investigated. The findings of this study can be applied to in situ diagnosis of SiOF thin film deposition and optimization of the deposition process.

Hydrogen plasma characteristics in a microwave chemical vapor deposition chamber

Hydrogen plasma characteristics in a microwave chemical vapor deposition chamber

Effect of Positive Bias and Pressure on Plasma Flow Characteristics in a Chemical Vapor Deposition Chamber

To better understand how positive bias and deposition pressure affect the plasma flow properties in the deposition chamber during the bias-enhanced MPCVD process, a two-dimensional axisymmetric model based on the discharge mechanism of pure H2 was constructed. The coupling process between different physical field models of the electromagnetic field, plasma, and temperature field in the MPCVD reactor is realized. We studied the influence of positive bias voltage and deposition pressure variation on microwave plasma flow characteristics in the deposition chamber. There was a bias voltage threshold phenomenon in the case of positive bias, and the suitable value range was narrow. Additionally, with the increase in the deposition pressure, the electron temperature in the deposition chamber tends to increase locally and reaches its maximum value when the pressure is approximately 30 torr. It provides new ideas and guidance for optimizing the process parameter setting of the bias-enhanced MPCVD process.

A wide-angle X-ray scattering laboratory setup for tracking phase changes of thin films in a chemical vapor deposition chamber.

The few-layer transition metal dichalcogenides (TMD) are an attractive class of materials due to their unique and tunable electronic, optical, and chemical properties, controlled by the layer number, crystal orientation, grain size, and morphology. One of the most commonly used methods for synthesizing the few-layer TMD materials is the chemical vapor deposition (CVD) technique. Therefore, it is crucial to develop in situ inspection techniques to observe the growth of the few-layer TMD materials directly in the CVD chamber environment. We demonstrate such an in situ observation on the growth of the vertically aligned few-layer MoS2 in a one-zone CVD chamber using a laboratory table-top grazing-incidence wide-angle X-ray scattering (GIWAXS) setup. The advantages of using a microfocus X-ray source with focusing Montel optics and a single-photon counting 2D X-ray detector are discussed. Due to the position-sensitive 2D X-ray detector, the orientation of MoS2 layers can be easily distinguished. The performance of the GIWAXS setup is further improved by suppressing the background scattering using a guarding slit, an appropriately placed beamstop, and He gas in the CVD reactor. The layer growth can be monitored by tracking the width of the MoS2 diffraction peak in real time. The temporal evolution of the crystallization kinetics can be satisfactorily described by the Avrami model, employing the normalized diffraction peak area. In this way, the activation energy of the particular chemical reaction occurring in the CVD chamber can be determined.

Maskless interdigitated a-Si:H PECVD process on full M0 c-Si wafer: Homogeneity and passivation assessment

In this work, the use of a novel, large area, mask-less and contact-less patterning technique is demonstrated for the first time, showing the localized deposition of hydrogenated amorphous silicon (a-Si:H) in a desired pattern over the full surface of an M0 (156 mm × 156 mm) solar wafer. The patterning functionality is achieved through a custom-designed RF electrode possessing a series of “slits” and placed in close proximity to the substrate in a plasma enhanced chemical vapor deposition (PECVD) chamber. Under a certain set of process conditions, a plasma only ignites within these slits, and the localized plasma results in localized patterned deposition of a-Si:H with feature widths compatible with application in an interdigitated back contact (IBC) solar cell design (760 μm). The homogeneity of the finger width and thickness over the surface of the M0 wafer is evaluated, with a 37% variation in thickness (at very high deposition rate, ∼1 nm/s) but only a 4.7% variation in finger width (MSE). With this application in mind, the impact of the deposition of such “fingers” on an underlying “blanket” passivation layer is assessed. Passivation is maintained or improved up to a given finger/blanket thickness ratio, above which the passivation is degraded. It is shown that the acceptable process window contains suitable thickness values for heterojunction (HJT) IBC solar cells, and the physical processes at the origin of this phenomenological observation are discussed.

(Digital Presentation) Diffusion and Segregation in Highly Stacked Ge0.9Sn0.1/Ge:B and Ge0.95Si0.05/Ge:P Epilayers

GeSn and GeSi are promising channel materials for gate-all-around (GAA) devices to achieve the high ION thanks to the high mobility [1, 2]. The undoped channels are used to reduce the impurity scattering and to further enhance the mobility. The GAA structure with high number of stacked channels can further enhance the ION for a fixed footprint. The dopant diffusion and segregation play an important role on GAA device structure design. In this work, the dopant diffusion and segregation effects of B and P in highly stacked Ge0.9Sn0.1 and Ge0.95Si0.05 epilayers are investigated, respectively.The Ge:B/Ge0.9Sn0.1/Ge:B epilayers were grown on the Ge-buffered SOI substrate at 320°C and 100 torr by chemical vapor deposition (CVD) using SnCl4, Ge2H6, and B2H6 precursors. The 160nm undoped Ge buffer was grown with an 800℃ annealing to confine the misfit dislocations at Ge/Si interface. For the 8 stacked Ge0.9Sn0.1 epilayers, 36 nm Ge0.9Sn0.1 layers sandwiched by 24 nm Ge:B layers were grown. Transmission electron microscopy (TEM) image of Ge:B/Ge0.9Sn0.1/Ge:B epilayers is shown in Fig. 1(a). The Ge:P/Ge0.95Si0.05/Ge:P epilayers were grown on the Ge-buffered SOI substrate at 350°C and 100 torr by SiH4, GeH4, and PH3 precursors using similar Ge buffer layers. For the 8 stacked Ge0.95Si0.05 epilayers, 24 nm Ge0.95Si0.05 layers sandwiched by 25 nm Ge:P layers were grown. TEM image of Ge:P/Ge0.95Si0.05/Ge:P epilayers is shown in Fig. 1(b). Note that both Ge0.9Sn0.1 and Ge0.95Si0.05 channel layers are unintentionally doped. In the 8 stacked Ge0.9Sn0.1 epilayers, the [B] in the Ge:B layers is as high as ~2.0 ×1021 cm−3 (Fig. 2(a)). In the 8 stacked Ge0.95Si0.05 epilayers, the [P] in the Ge:P layers is as high as ~2.2 × 1020 cm−3 , and the minimum [P] in the Ge0.95Si0.05 channel layers is from ~4.2 ×1017 cm−3 to ~1.5 ×1018 cm−3 (Fig. 2(b)).The B and P diffusion phenomena in the GeSn and GeSi layers are investigated, respectively. The deep undoped GeSi layers have higher [P] due to higher thermal budget (Fig. 3). Note that the P atoms diffuse from the Ge:P layers into GeSi channels during the epitaxial growth. The similar [B] ~3x1016cm-3 in the 2nd to 8th GeSn layers is due to the B detection limit of SIMS analysis (Fig. 3). Note that the decay length (nm/decade) is defined in Fig. 4 and Fig. 5. The decay length of [B] on the top side (4.3 nm/decade) is larger than that on the bottom side (2.9 nm/decade) due to SIMS knock-on effect [3] (Fig. 4). On the other hand, the P segregation [4] increases the decay length on the bottom side of GeSi layers (Fig. 5). Both the decay length of [B] and [P] increase with the increasing depth (Fig. 6) due to the higher thermal budget of the deeper layers in the CVD chamber. In addition, the difference of [B] decay length between top and bottom sides increases with the increasing depth of epilayers (Fig. 6). For the Ge:P/GeSi/Ge:P epilayers, the difference between top and bottom [P] decay length (less than 0.9 nm/decade) is smaller than that of [B] decay length in Ge:B/GeSn/Ge:B epilayers (larger than 1.4 nm/decade) due to P segregation, and the difference decreases for deep layers.AcknowledgmentThis work is supported by the Ministry of Science and Technology, Taiwan (MOST 110-2622-8-002-014-, 110-2218-E-002-030-, and 110-2218-E-002-042-MBK) and the Ministry of Education, Taiwan (NTU-CC-110L892601). The support by Taiwan Semiconductor Research Institute (TSRI), Hsinchu, Taiwan, is also highly appreciated.

Preparation of a ZnO Nanostructure as the Anode Material Using RF Magnetron Sputtering System.

In this study, a four-inch zinc oxide (ZnO) nanostructure was synthesized using radio frequency (RF) magnetron sputtering to maximize the electrochemical performance of the anode material of a lithium-ion battery. All materials were grown on cleaned p-type silicon (100) wafers with a deposited copper layer inserted at the stage. The chamber of the RF magnetron sputtering system was injected with argon and oxygen gas for the growth of the ZnO films. A hydrogen (H2) reduction process was performed in a plasma enhanced chemical vapor deposition (PECVD) chamber to synthesize the ZnO nanostructure (ZnO NS) through modification of the surface structure of a ZnO film. Field emission scanning electron microscopy and atomic force microscopy were performed to confirm the surface and structural properties of the synthesized ZnO NS, and cyclic voltammetry was used to examine the electrochemical characteristics of the ZnO NS. Based on the Hall measurement, the ZnO NS subjected to H2 reduction had a higher electron mobility and lower resistivity than the ZnO film. The ZnO NS that was subjected to H2 reduction for 5 min and 10 min had average roughness of 3.117 nm and 3.418 nm, respectively.

Single-Walled Carbon Nanotube Synthesis Yield Variation in a Horizontal Chemical Vapor Deposition Reactor.

The controlled synthesis of single-walled carbon nanotubes (SWNTs) is essential for their industrial application. This study investigates the synthesis yield of SWNTs, which depends on the positions of the samples on a horizontal chemical vapor deposition (CVD) system. Methane and Fe thin films were used as the feedstock and catalyst for SWNTs synthesis, respectively. A high-resolution scanning electron microscope was used to examine the synthesis yield variation of the SWNTs along the axial distance of the reactor. The morphology and crystallinity of the fabricated SWNTs were evaluated by atomic force microscopy and Raman spectroscopy, respectively. We observed that the highest synthesis yield of the SWNTs was obtained in the rear region of the horizontal reactor, and not the central region. These results can be applied to the synthesis of various low-dimensional nanomaterials, such as semiconducting nanowires and transition metal dichalcogenides, especially when a horizontal CVD chamber is used.

Hybrid structures of Si Nanocrystals-Carbon Nanotubes with bead architecture

In present work, hybrid structures of Si Nanocrystals (Si-ncs) and Carbon Nanotubes (CNTs) with bead-like architecture have been synthesized by exposing pristine CNTs to silane (SiH4) at 200 ºC. The exposed CNTs were annealed in Ar ambient at 500ºC in a catalytic chemical vapor deposition chamber. High-resolution transmission electron microscopy (HRTEM) elucidated that the bead-like architecture has well-defined crystalline nature. X-ray photoelectron spectroscopy (XPS) was used to study the nature of chemical bonding and structural functionalization/defects caused by silane exposure and annealing on the nanotube surface. XPS results indicated in-diffusion of Si in the CNT cavity as well reduction in oxygen content on the top surface of the CNTs. X-ray diffractometry was used to further confirm the formation of the crystalline hybrid structures. From the present work it is inferred that a controlled synthesis of hybrid structures (CNT-Si ncs) with bead-like architecture can be achieved by a simple CVD method for various applications

Kinetic Mechanism of Reactive Oxygen/Nitrogen Species in Plasma-Assisted Greenhouse Gas Replacement

In semiconductor manufacturing, greenhouse gases, such as perfluorocarbons (PFCs) and nitrogen trifluoride (NF3), which are sources of global warming, are frequently used to remove substances during cleaning and etching. Particularly, NF3, which has a high global warming potential (GWP) is widely used for chamber cleaning in the chemical vapor deposition (CVD) process. There is an urgent need to replace high GWP gases with eco-friendly gases. In this study, we investigated the possibility of replacing NF3 with N2 gas from the existing NF3/O2 gas mixture during the cleaning process in a plasma-enhanced CVD (PECVD) chamber for the formation of an amorphous carbon layer. The kinetic reaction mechanism of nitrogen-augmented plasma was investigated using ANSYS Chemkin-Pro, and the verification was conducted using an environmentally friendly gas-based direct plasma cleaning process in the PECVD chamber with capacitively coupled plasma (CCP). The verification experiment was conducted with a 150-mm laboratory scale and a 300-mm production equipment. Chemical reaction analysis was then performed to analyze the chemical reaction mechanism in the plasma and identify the trends in the cleaning efficiency. The results derived from the analytical and empirical experiments showed that the addition of N2 positively affected the reaction of O2 in the plasma with surface materials; this improved the cleaning, and the effectiveness of eco-friendly cleaning processes using alternative gases could be confirmed.