Chromium nitride (CrN) spurred enormous interest due to its coupled magnetostructural and unique metal-insulator transition. The underneath electronic structure of CrN remains elusive. Herein, the electronic structure of epitaxial CrN thin film has been explored by employing resonant photoemission spectroscopy (RPES) and X-ray absorption near edge spectroscopy study in combination with the first-principles calculations. The RPES study indicates the presence of a charge-transfer screened 3d ^n{underline{L}} (L: hole in the N-2p) and 3d ^{n-1} final-states in the valence band regime. The combined experimental electronic structure along with the orbital resolved electronic density of states from the first-principles calculations reveals the presence of Cr(3d)-N(2p) hybridized (3d ^n{underline{L}}) states between lower Hubbard (3d ^{n-1}) and upper Hubbard (3d ^{n+1}) bands with onsite Coulomb repulsion energy (U) and charge-transfer energy (Delta) estimated as approx 4.5 and 3.6 eV, respectively. It verifies the participation of ligand (N-2p) states in low energy charge fluctuations and provides concrete evidence for the charge-transfer (Delta<U) insulating nature of CrN thin film.
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