Oxygen vacancies play an important role in the formation of the electrical and optical properties of hafnium oxide. Both conductivity and emission bands are determined by this intrinsic defect. The work studies the luminescence of oxygen vacancies. The spectral and temperature dependences of luminescence show the leading role of electron-phonon interaction. The work proposes an algorithm for determining the parameters of this interaction and constructs configuration-coordinate diagrams of emission centers that are associated with different charge states of oxygen vacancies in hafnium oxide.