Charge-state Transition Levels Research Articles

Origin of enhanced thermoelectric properties of doped CrSi2

Using first principles density functional theory, we report for CrSi2, a linear relationship between thermodynamic charge state transition levels of defects and maxima of thermopower Tm, thus proposing a unique way of tuning thermoelectric properties. We show for doped CrSi2 that the peak of thermopower occurs at the temperature which corresponds to the position of the defect transition level. Therefore, by modifying the defect transition level, a thermoelectric material with a given operational temperature can be designed.

Impact of carbon and nitrogen impurities in high-κ dielectrics on metal-oxide-semiconductor devices

We investigate the electronic structure of carbon and nitrogen impurities, which are commonly incorporated during atomic-layer deposition of high-κ oxides such as Al2O3 and HfO2. The impact on metal-oxide-semiconductor devices is assessed by examining formation energies, transition levels, and band alignment between the oxide and semiconductors such as GaN, Si, and III-As. Carbon introduces charge-state transition levels near the semiconductor conduction-band edges, resulting in border traps and/or leakage current. Nitrogen acts as a source of negative fixed charge but may also be effective in alleviating the problem of carrier traps associated with native defects.

System-size convergence of point defect properties: The case of the silicon vacancy

We present a comprehensive study of the vacancy in bulk silicon in all its charge states from 2+ to 2-, using a supercell approach within plane-wave density-functional theory, and systematically quantify the various contributions to the well-known finite size errors associated with calculating formation energies and stable charge state transition levels of isolated defects with periodic boundary conditions. Furthermore, we find that transition levels converge faster with respect to supercell size when only the Gamma-point is sampled in the Brillouin zone, as opposed to a dense k-point sampling. This arises from the fact that defect level at the Gamma-point quickly converges to a fixed value which correctly describes the bonding at the defect centre. Our calculated transition levels with 1000-atom supercells and Gamma-point only sampling are in good agreement with available experimental results. We also demonstrate two simple and accurate approaches for calculating the valence band offsets that are required for computing formation energies of charged defects, one based on a potential averaging scheme and the other using maximally-localized Wannier functions (MLWFs). Finally, we show that MLWFs provide a clear description of the nature of the electronic bonding at the defect centre that verifies the canonical Watkins model.

Defects in SiC for quantum computing

The successful implementation of the nitrogen-vacancy (NV) center in diamond as a qubit has spawned a great deal of interest in this defect. In principle, similar defects suitable for quantum computing should exist in other material systems; however, very little work has been done on identifying NV-like centers in other materials. We discuss the key properties of the NV center in diamond in the context of uncovering similar defects in other materials, with the specific example of SiC. Using first-principles calculations, we compare the properties of the NV center in diamond to the analogous defect in 4H-SiC. We also compare the properties of the bare vacancies. We calculate defect formation energies and charge-state transition levels to determine which defects are likely to form. Then, by analyzing the defect-induced electronic states, we determine whether stable defects in 4H-SiC may have properties similar to those of the NV center in diamond.

First-principles study of As interstitials in GaAs: Convergence, relaxation, and formation energy

Convergence of density-functional supercell calculations for defect formation energies, charge transition levels, localized defect state properties, and defect atomic structure and relaxation is investigated using the arsenic split interstitial in GaAs as an example. Supercells containing up to 217 atoms and a variety of {\bf k}-space sampling schemes are considered. It is shown that a good description of the localized defect state dispersion and charge state transition levels requires at least a 217-atom supercell, although the defect structure and atomic relaxations can be well converged in a 65-atom cell. Formation energies are calculated for the As split interstitial, Ga vacancy, and As antisite defects in GaAs, taking into account the dependence upon chemical potential and Fermi energy. It is found that equilibrium concentrations of As interstitials will be much lower than equilibrium concentrations of As antisites in As-rich, $n$-type or semi-insulating GaAs.