Origin of enhanced thermoelectric properties of doped CrSi2

Abstract

Using first principles density functional theory, we report for CrSi2, a linear relationship between thermodynamic charge state transition levels of defects and maxima of thermopower Tm, thus proposing a unique way of tuning thermoelectric properties. We show for doped CrSi2 that the peak of thermopower occurs at the temperature which corresponds to the position of the defect transition level. Therefore, by modifying the defect transition level, a thermoelectric material with a given operational temperature can be designed.