Using the developed technology, double-matrix structures of the hierarchical architecture GaSe <LAK> InSe <LAK> and C <LAK> were obtained. In the first two systems, significant increase in photosensitivity and visualization of the effect of photo-inductive response was recorded. New effect was revealed - oscillation of imaginary component of complex impedance of nanostructure GaSe<LAK> under lightning, which is most likely caused by the phenomenon of quantum-mechanical resonant tunneling. Also, this nanostructure is characterized by a high quality factor that is promising for its use in the manufacture of super-high capacity radio-frequency capacitors. Frequency dependence of dielectric permittivity of InSe <LAK> nanostructure is very interesting, namely its low-frequency oscillations, which may be caused by the processes of charge accumulation on the inter-phase limits and resonant tunneling in the N- barrier structure, formed as a result of nano-hybridization. The use of the synthesized structure C <LAK> as cathode material for Li+- intercalation current formation provided the value of specific capacity of 350 mAh/g, which is twice higher than the specific capacity of the known market cathode materials.