Abstract
We have developed a transient current model to quantitatively describe the charge accumulation dynamics in organic thin film transistors. This model indicates that the charge accumulation process is faster at higher gate bias and/or higher field-effect mobility, and the experimental results are consistent with the theoretical expectations. A strong gate bias dependence of the field-effect mobility is observed, which suggests that the charge traps in the charge accumulation layer may limit the device performance not only at steady state but also at transient state.
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