Characterization Of Thin Films Research Articles

Surface enhanced Raman scattering in thin films: the importance of Raman analyte-plasmonic particle inverse geometry

Most of the successful applications of surface enhanced Raman scattering (SERS) involves placing the Raman analyte molecule over the SERS substrate. This conventional geometry of SERS does not work when the Raman analyte is in the form of a thin film. In this report, we experimentally demonstrate the importance of the rarely explored inverse geometry wherein a plasmonic particle is placed over an analyte thin film for SERS study. Initially, as a case study, the effect of size, concentration, and distribution of gold nanoparticles (AuNPs) on the SERS of Si wafer was performed. The AuNPs, prepared by optimized annealing of direct current sputtered Au, were characterized by scanning electron microscopy, atomic force microscopy, and UV-Visible spectrophotometry. Finally, as an application, SERS in inverse geometry was successfully performed with an electron-beam evaporated Si thin film. For the first time, a working formula has been proposed to determine the experimental enhancement factor (EEF) for the inverse geometry of SERS. The values of EEF were estimated to be 1526 and 3274 respectively for Si wafer and Si thin film for the similar distribution of AuNPs of average size 52 nm. This study provides an insight into the characterization of thin films.

Synthesis and characterization of Cr-doped cadmium oxide thin films for NH3 gas-sensing applications

Synthesis and characterization of Cr-doped cadmium oxide thin films for NH3 gas-sensing applications

Thickness effects on the physical characterization of nanostructured CuO thin films for hydrogen gas sensor

In these studies, radio frequency (RF) magnetron sputtering was used to produce nanostructured CuO thin films on glass bases with different thicknesses of (250, 300, and 350 nm). X-ray diffraction (XRD) analysis of these films revealed a polycrystalline structure with a preferred peak along the (111) plane. The Scherrer formula was used to compute the grain size. It was found that the average grain sizes are 10.78 nm, 11.36 nm, and 11.84 nm for film thicknesses of 250, 3000, and 300 nm, respectively, while the dislocation density and strain values decline. The surface roughness decreased from 9.30 nm to 4.71 nm as the thickness increased, according to atomic force microscopy (AFM) data. As the thickness of the film grew, the root mean square (RMS) roughness likewise decreased from 9.18 nm to 4.29 nm. The homogenous, semi-spherical structure comprises uniformly distributed particles, as demonstrated by SEM images. The optical properties of the grown films showed that the absorption coefficient considerably increased with film thickness. Transmittance, band gap, refractive index, and extinction coefficient all decrease with increasing film thickness. The hydrogen gas measurements, indicated a reduction in sensitivity as the thickness and gas concentration increased at 30°C.

Epitaxial growth, structural and magnetic characterization of thulium thin films

Epitaxial growth, structural and magnetic characterization of thulium thin films

Use of Particle Induced X-Ray Emission (PIXE), Particle Induced Gamma–Ray Emission (PIGE), Energy Dispersive X-Ray Analysis (EDXRF) for Detecting Trace Elements in Soil Sample

This review paper provides a comprehensive overview of trace element analysis utilizing ion-atom interaction techniques, focusing on the principles, applications, and recent advancements in the field. Ion- atom interaction techniques, including Particle Induced X- Ray Emission (PIXE), Particle Induced Gamma–Ray Emission (PIGE), Energy Dispersive X-Ray Analysis (EDXRF), Rutherford backscattering spectroscopy (RBS), and ion beam analysis (IBA), offer unique capabilities for trace element analysis with high sensitivity and minimal sample preparation requirements. The paper begins by discussing the fundamental principles underlying ion-atom interaction techniques, such as the interaction of energetic ions with matter and the subsequent detection of emitted X-rays or backscattered particles. It explores the various analytical parameters that influence the sensitivity, resolution, and depth profiling capabilities of these techniques. Furthermore, the review highlights the diverse applications of ion-atom interaction techniques in fields such as environmental monitoring, forensic science, biomedical research, and materials science. It showcases how these techniques have been utilized to address specific analytical challenges, such as the detection of trace contaminants in environmental samples or the characterization of thin films and semiconductor materials.

Fabrication and Characterization of Boron-Implanted Silicon Superconducting Thin Films on SOI Substrates for Low-Temperature Detectors

Fabrication and Characterization of Boron-Implanted Silicon Superconducting Thin Films on SOI Substrates for Low-Temperature Detectors

Influence of light and humidity on the synthesis and characterization of perovskite FAPbI3 thin films

Influence of light and humidity on the synthesis and characterization of perovskite FAPbI3 thin films

HiPIMS and Bipolar HiPIMS Techniques for Tunable Phase Formation of Yttrium Oxide Thin Films at Low-Temperature

This study investigates the deposition process and characterization of yttrium oxide thin films using high-power impulse magnetron sputtering (HiPIMS) and bipolar HiPIMS, which are advanced deposition technologies that can effectively use high energy for controlling energy flux to produce thin films. These two techniques require no heat for the control of phase formation of yttrium oxide thin films. The properties of the films were analyzed using X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, ultraviolet–visible spectrometry, and water contact angle analyses. The results indicated that the energy of sputtered species can be effectively tuned by adjusting the process parameters, and it can then be used to achieve phase control of yttrium oxide thin films. The monoclinic phase is associated with a high number of oxygen vacancies in the films. The cubic phase with low oxygen vacancies produces more compact thin films with wide bandgaps. Therefore, the relationship between the process parameters and the resultant structural, morphological, and optical properties as well as the wettability of the deposited films is confirmed. This allows the film properties to be tuned to each application, enabling their use in various fields.

Fabrication and characterization of HfxAl(1-x)Oy ceramic targets and thin films by RF sputtering

The potential of HfO2 as a memory semiconductor material with ferroelectric properties in thin-film deposition has been recently analyzed. In this study, the preparation, composition, and physical properties of Al-doped hafnium oxides were analyzed. HfxAl(1-x)Oy (HAO) [x = 0.33, 0.5, and 0.67] powders were prepared by controlling the ratio of Hf to Al and using ball milling. The HAO powder was calcined at 1000 °C in a furnace and then sintered in a temperature range of 1000–1600 °C by a solid-state reaction method to fabricate high-quality targets with high densities. The density and crystal size increased with the sintering temperature. The 1600-°C Hf0.67Al0.33Oy target was optimal for thin-film deposition. In addition, the target properties were affected by an increase in the HfO2 content x. The crystal structures and sizes, surface free energies, contact angles, and band gaps of the HAOs were evaluated to analyze their potential as high-k dielectric materials. HAO is a promising high-k dielectric and memory material, valuable for further studies on ferroelectric gate oxide materials. This study contributes to the increasing number of studies on the ferroelectricity of HfO2 thin films and provides a fundamental understanding of this material and its potential for novel device applications.

Preparation, characterization, and electrical properties of PVDF-ZnO nanocomposite thin films

Preparation, characterization, and electrical properties of PVDF-ZnO nanocomposite thin films

Synthesis and characterization of ceramic high entropy carbide thin films from the Cr-Hf-Mo-Ta-W refractory metal system

We use reactive DC magnetron sputtering to showcase synthesis strategies for multicomponent carbides with the NaCl-type fcc structure and illustrate how deposition conditions allow controlling the formation of metallic and ceramic single phases in the Cr-Hf-Mo-Ta-W system. The synthesis is performed in argon flow and different acetylene flows from 0 to 12sccm, at ambient and elevated temperatures (700 °C), respectively, hindering/promoting the adatom diffusion. Structural and microstructural investigations reveal the formation of the bcc metallic phase (a=3.188−3.209Å) in films deposited without acetylene flow, also supported by ab initio density function theory (DFT) analysis of lattice parameters as a function of the C content. Experimentally, a bcc-to-fcc phase transition is observed through the formation of an amorphous coating. Contrarily, samples deposited in higher acetylene flow show an fcc multielement carbide phase (a=4.33−4.49 Å). The crystalline films reveal columnar morphology, while the amorphous ones are very dense. We report promising mechanical properties, with hardness up to 25±1GPa. The indentation moduli reach up to 319±6GPa and show trends consistent with DFT predictions. Our study paves the path towards the preparation of Cr-Hf-Mo-Ta-W multicomponent carbides by magnetron sputtering, showing promising microstructure as well as mechanical properties.

Nanostructuring, fractal characterization and wettability of ion irradiated Au thin films and their thickness effect

This study proposes a method for modifying the wettability of Au thin films of thicknesses 5 nm and 10 nm on Si substrates using 8 keV Ne ion beam irradiation at different fluences, thereby enabling surface wettability adjustment at the nano-scale and its thickness dependence. This advancement would be highly beneficial for applications such as high-resolution printing and nano-biotechnology. The contact angle of the irradiated region for the 5 nm thin film changed from hydrophobic to hydrophilic with increasing ion dosage, whereas for the 10 nm thin film, it changed from hydrophilic to hydrophobic under the same conditions. Fractal analysis was performed on pristine and ion beam modified surfaces to investigate the underlying nano-structuring process, with reported values for average roughness (Ra), Hurst exponent (H), fractal dimension (Df), contact angle (CA), and wettability at different ion dosages. Atomic Force Microscopy and Rutherford Backscattering Spectroscopy were used to examine surface roughness and depth profile. The process of sputtering becomes crucial when the ion range approaches the thickness of thin films, with the sputter yield showing dependence on the thickness of thin films at different ion fluence levels. Monte Carlo simulations SRIM/TRIM and TRIDYN were used for comparison with the experimental results, with TRIDYN taking into account dynamic changes in the target's morphology and composition.

Synthesis and Characterization of ZnO-CuO Nanocomposites Thin Film for Optoelectronics Applications

In this work, the spray pyrolysis technique on glass substrates at 480°C was effectively used to generate ZnO, CuO, and n-ZnO/p-CuO nanocomposite thin films. The structure of the ZnO thin films exhibited a hexagonal wurtzite type. In the visible region of the spectrum (400–700 nm), the resulting films had optical transmission ranging from 73% to 83% and optical band gap fluctuations of 3.23 to 3.25 eV. Analysis of the m-lines spectroscopy revealed that the obtained thin layers (ZnO, ZC3, and ZC7) exhibited two modes for both TE and TM polarizations across different molar percentages. This observation confirms the efficacy of the spray pyrolysis deposition technique in producing high-quality waveguides based on ZnO.

Dynamic wire-pull rubber diaphragm for rapid formation and spatio-temporal investigation of multi-shape free-standing liquid films

Quantitative manufacturing and characterization of thin films are relevant in different scientific and industrial fields. Especially, for the studies of fluid dynamics, the experimental verification of theoretical models creates the need of a free-standing liquid film formation. Driven by the lack of fast and accurate liquid film forming technology, we present a novel device able to fabricate thin free-standing liquid films, which is based on a dynamic and adjustable diaphragm, the opening of which allows for the rapid formation of a self-supported liquid film confined in a wire-pull rubber band. The quantitative thickness mapping of the film formation and its time-resolved evolution are performed by digital holography in real-time. This builds up a strategy that allows for the accurate liquid film formation with controllable size and volume. As the results, multi-shape and multi-material thin films under controllable and stable conditions are successfully formed, including free-standing water, soapy water and glycerol films. A label-free spatio-temporal analysis method for flow dynamics is proposed: The full-field time series of film thickness is reassembled in a new coordinate system composed of radius, time, and thickness. Such spatio-temporal analysis reveals details of leveling and drainage processes. To the best of our knowledge, this is the first full-field quantitative thickness analysis of multi-shape and multi-material thin films. The proposed Dynamic Wire-pull Rubber Diaphragm (DWRD) together with the digital holography add-on offer characterization abilities with an unprecedented level of details allowing for a deeper understanding of the underlying thin film dynamics that can be useful in several different scientific and technological fields as biotechnology, life science, and nanotechnology.

Characterization of Nanocrystalline SnS Thin Film Fabricated used PLD Method for Photodetection Applications

Pulsed laser deposition was used to create tin sulfide (SnS) nanoparticles with a Nd:YAG laser (700 mJ) with laser pulses of (200, 250, 300, and 350 pulses). Nanoparticles were created and investigated using XRD, AFM, and UV-Vis spectroscopy to understand their optical, topographical, and electrical properties. After that, a SnS photodetector was built for the first time, and its performance, photoresponse, and sensitivity were evaluated. The development of monocrystalline SnS films was confirmed by X-ray diffraction (XRD) examination. Clear crystallization with increased crystalline size and the optimum orientation was observed in the sample synthesized SnS thin film treated with 300 pulses. The crystallite size increased from 44 at 200 to 77 nm for 350 pulses. These films were characterized by better surface morphology with (111) preferred crystals. In addition, atomic force microscopy (AFM) studies showed that the average diameter of generated SnS nanoparticles rose from (39.4 nm to 64.7) nm when the laser pulses increased in pulsed laser deposition. Transmission measurements were used to determine the films' absorption coefficient energy gap (Eg), and they showed that the optical transition was direct and that the transmittance value dropped with increasing laser pulses. Band gap energy is reduced from 2.139 to 1.773 eV. Moreover, Hall Effect measurements on all samples demonstrate that all thin films were n-type, with charge carrier concentration increasing with increased pulses and carrier mobility decreasing with increased pulses. The photodetectors ' photosensitivity was evaluated in the dark after depositing Al contacts on SnS thin films through a metal mask. The Pulses of enhancement cause a red shift in the values of particular detectivity and quantum efficiency. The highest responsivity was obtained at 350 pulses, 6.72×10−1 AW−1. The high (QE) of 150% at 200 p and detectivity of 2.9×1011 cm, Hz1/2.W-1 at 300p.

Characterization of NiOAg thin film applicated as photocatalyst for degradation of methylene blue dye waste in Yogyakarta textile factory

Thin films of NiOAg were grown onto glass substrates by radio frequency (RF) sputtering technique at 13.56 MHz RF with variation in oxygen pressure. The research was conducted on preparation and characterization of NiOAg thin films, applicated as a photocatalyst for the degradation of methylene blue. X-ray diffraction analysis showed stronger intensity (111) and (200) planes at peak 2θ of 37.66° and 43.23°. Energy dispersive x-ray analysis showed the following composition: Ni = 40.45%, Ag = 13.01%, and O = 46.53%. Based on UV–vis, it was found that the bandgap energy was 2.8, 3.1, and 3.2 eV for oxygen pressures of 0.05, 0.1, and 0.15 × 10−2 mbar, respectively. From the experiment on the degradation of methylene blue, which was taken from textile factory dye waste in Yogyakarta/Indonesia, the best value of degradation was obtained as 91.96%.

Experimental Techniques for the Characterization of Magnetic Thin Films

This review article describes the various experimental techniques, which are required for the characterization of magnetic thin films. Characterization is an essential process to understand the properties of magnetic thin films. By knowing the properties of these materials, one can utilize them in various technological applications as per requirements. There are different characterization tools to study the different properties of nanostructured materials. Some important experimental techniques employed to characterize the magnetic thin films are: X-Ray Diffraction, X-Ray reflectivity, Field emission scanning electron microscopy, Energy dispersive spectrometer, Transmission electron microscopy, Superconducting quantum interference device, Raman spectroscopy and X-ray absorption spectroscopy etc. These techniques will develop a better understanding of the structural, morphological, and magnetic properties of the materials to the scientific community. The discussion made in the present review article would be extremely helpful to the researchers who are doing research in the various branches of science and engineering.

Optical characterization and dispersion analyses of plasma polymerized methyl acrylate thin films

This work reports the structural characteristics, surface morphology, linear and nonlinear optical properties of 110 to 225 nm thick plasma polymerized methyl acrylate (PPMA) thin films. X-ray diffraction analyses confirm the amorphous nature of the films. Field emission scanning electron micrographs of the films display cluster-based surface morphology. Attenuated total reflectance Fourier transform infrared spectroscopy confirms the chemical structural changes in the films. The optical properties were studied based on the absorbance, transmittance, and reflectance spectra measured by an ultraviolet–visible spectrophotometer within the wavelength ranges from 200 to 800 nm. The direct optical band gap and Urbach values are increased from 3.66 to 3.83 eV and 0.28 to 0.45 eV, respectively with increasing film thickness. The extinction coefficient and refractive index were evaluated, and discussed a correlation between the refractive index and the optical bandgap. The real and imaginary dielectric constants, volume/surface energy loss functions and skin depth were deduced. The oscillator energies and parameters were analyzed using the concept of Wemple-DiDomenico and Sellmeier models, respectively for a single oscillator. Static linear refractive index for the studied films exhibits normal dispersion behavior with film thicknesses and satisfied Moss, Ravindra-Gupta, and Herve-Vandamme rules. The linear susceptibility, third-order nonlinear susceptibility and the non-linear refractive index are considerably reduced from 0.20, 29.5 × 10−14 esu, and 5.89 × 10−12 esu with increasing optical band gap energies. The outcomes from the analyses of PPMA demonstrated their potential for usage in electronic, optoelectronic, and non-linear device applications.

Synthesis, Characterization and Power Factor Estimation of SnSe Thin Film for Energy Harvesting Applications

In this work, a simple, cost-effective successive ionic layer adsorption and reaction (SILAR) deposition technique has been used to deposit a high-quality tin selenide (SnSe) thin film onto a glass substrate. Structural, morphologic, and thermoelectric properties have been characterized for the prepared thin film. X-ray diffraction (XRD) results of the SnSe thin film reveal an orthorhombic structure phase. The morphological properties of the prepared thin films have been studied using field emission scanning electron microscopy (FESEM). The stoichiometric composition of the deposited thin film and the elemental binding energies of the Sn and Se elements have been investigated with energy-dispersive spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS). The Fourier transformation infrared (FTIR) spectrum of the SnSe thin film displays vibrational modes of chalcogenides bonds. These results suggest that the developed thin film is crystalline, uniform, and without impurities and is appropriate for energy harvesting applications. The prepared thin film’s Seebeck coefficient and electrical resistivity were estimated through ZEM-3 from room temperature to 600 K. The power factor was evaluated. A substantially high electrical conductivity is observed, which decreases somewhat with temperature, suggesting a semimetal conducting transport—the absolute values of the Seebeck coefficient increase with temperature. The resulting power factor showed the highest values near room temperature and a somewhat decreasing trend as the temperature increased. Despite lower values of the Seebeck coefficient, the substantially enhanced power factor is due to the higher electrical conductivity of the thin film, superior to that reported previously. This precursor study demonstrates promising results for developing high-performance flexible thermoelectric devices via a simple and facile SILAR strategy.

Effect of annealing temperature on the structure and dielectric characterization of ITO thin films on a boro-float substrate prepared by radio frequency sputtering

Effect of annealing temperature on the structure and dielectric characterization of ITO thin films on a boro-float substrate prepared by radio frequency sputtering