Characteristics Of Solar Cells Research Articles

Dye-sensitized solar cell: Effect of light on N3 dye/BMII electrolyte based architecture

This study evaluates the photovoltaic performance of Dye-Sensitized Solar Cells (DSSCs) for various light conditions. This work focuses on exploring the experimental characteristics of a thin-film solar cell composed of an ITO/TiO2/N3-Dye and BMII electrolyte molecules/Pt/ITO. A meticulous investigation is conducted to understand the impact of different illumination intensities on the efficiency of these solar cells. In the experiments, the power conversion efficiencies (PCE) of the device reached 7.61 % with a maximum open-circuit voltage (Voc) of 0.67 V under 100 mW/cm2 AM 1.5 solar irradiance. The morphology of the TiO2 nanoparticles that have been synthesized for the DSSC were analyzed by Ultraviolet–Visible Spectrometry, X-Ray Diffractometry, as well as Scanning Electron Microscopy and Atomic Force Microscopy. Electrochemical impedance spectroscopy (EIS) parameters and Nyquist plot results showed that a systematic understanding of charge transfer within the DSSC is essential to extract an equivalent circuit model. The results of this study allow optimizing the performance of future DSSCs for sustainable energy systems.

Investigation of the structural and optoelectronic characteristics in coumarin-based dye-sensitized solar cells, both in isolation and with TiO2 adsorption

In this study, six novel organic dyes derived from coumarin have been formulated by limiting the rotation of bithiophene through the introduction of substituents, namely NCH3, Si(CH3)2, C(CH3)2, C=C(CH3)2, and C=O. Their structural, electronic, photovoltaic, and spectral properties were investigated using density functional theory at the B3LYP/6-31G(d,p) level. Furthermore, the time-dependent DFT (TD-DFT) at TD-BHandH/6-31G(d,p) level method was chosen to calculate the electronic absorption spectra and charge transfer characteristics of the investigated dyes in the chloroform solvent, as well as molecular properties such as geometries parameters, optoelectronic properties, and frontier molecular orbitals. With our studies, we reveal that all the studied dyes show significance in the range of 340.97–610.89 nm, with a band gap in the range of 1.90–2.26 eV, as well as high light capture efficiency (LHE) and significant intramolecular charge transfer (ICT) properties. In addition, we were interested in the energetic, electronic, and absorption studies of dyes linked to the TiO2 semiconductor (Dye@TiO2). All designed dyes exhibit better geometric and optoelectronic properties except for D3, which has the lowest gap energy and extends towards the red. The results reveal that these compounds would be used as potential sensitizers for DSSC applications.

Ion-migration analysis of degradation caused by outdoor exposure and accelerated stress testing in perovskite solar cells

In this study, we conducted outdoor exposure testing and investigated the degradation mechanism of perovskite solar cells deployed in the field. We conducted a detailed failure analysis to identify specific degradation modes induced by outdoor exposure, using current–voltage curve measurements, maximum power evaluation, and mobile-ion analysis. This analysis revealed a significant change in the ion-migration current response of the devices after exposure. These changes suggest that the modification of mobile ions and formation of defects within the perovskite materials are likely the primary causes of degradation. Additionally, we compared the solar cell characteristics observed after the field test with the results of controlled indoor accelerated stress tests, which included exposure to visible light, ultraviolet (UV) irradiation, and thermal stress. Our findings highlight that the degradation patterns induced by UV irradiation at elevated temperatures closely resemble those caused by outdoor stress. We also discuss indoor test conditions that replicate the degradation phenomena experienced during outdoor exposure. This ability to replicate outdoor degradation phenomena under laboratory conditions is crucial for accelerating the development of robust and durable perovskite solar cells.

Improving photovoltaic characteristics of CdS-based hybrid solar cells through Mn incorporation

CdS thin films, both with and without Mn-doping, were grown via chemical bath deposition on indium tin oxide-coated glass substrates for application in hybrid solar cells. X-ray diffraction analysis revealed that Mn doping led to a deterioration in the crystal quality of CdS samples, evidenced by increased microstrain and dislocation density. Mn atoms were interstitially incorporated into the CdS structure, resulting in an expansion of the unit cell volume. Morphological analysis indicated a decrease in grain size from 390 nm to 140 nm for 0 % and 2 % Mn-doped CdS samples, respectively, while maintaining the spherical shape of the CdS thin films. Mn doping also increased the transmittance of CdS thin films, with the highest transparency of 95 % at 580 nm achieved for the 2 % Mn-doped CdS sample. In comparison to undoped CdS (2.38 eV), the band gap of CdS samples initially decreased to 1.84 eV for 1 % Mn doping but significantly increased to 3.03 eV for 2 % Mn-doped CdS. Photoluminescence (PL) data indicated that 2 % Mn-doped CdS thin films exhibited the lowest peak intensity, suggesting that a high concentration of Mn atoms caused non-radiative charge recombination. Additionally, efficient exciton dissociation was observed between CdS:Mn and P3HT:PCBM (poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM)) layers in the 2 % Mn-doped CdS-based device, as per the PL results. Photovoltaic measurements demonstrated that compared to undoped CdS, 2 % Mn doping increased the power conversion efficiency of the CdS-based device from 0.070 % to 0.202 %, indicating an almost threefold increase in hybrid solar cell efficiency. This improvement is likely attributed to the development of a better interface between the CdS:Mn and P3HT:PCBM layers.

Fabrication of thin film solar cell based on CoO-CoS/P2-Amino-1-mercaptobenzene/polypyrrole with additional promising sensitivities to photons in a broad optical region

The production of a thin-film solar cell device, employing CoO-CoS/P2-Amino-1-mercaptobenzene/polypyrrole (CoO-CoS-P2AMB/Ppy), showcases enhanced sensitivity across a broad optical spectrum. This achievement is realized through a one-pot polymerization process involving 2-Amino-1-mercaptobenzene, Co(NO3)2, and K2S2O8. Notably, the polymerization reaction incorporates the inclusion of a Ppy seeding layer into the solution. To comprehensively characterize the synthesized materials, an array of analytical tools is employed. Subsequently, the CoO-CoS-P2AMB/Ppy device undergoes rigorous testing under diverse light conditions, including darkness, white light, and monochromatic light. These conditions aim to assess the device’s responsiveness to photons of varying energies, where the resulting current density (Jph) serves as an indicator of generated hot electrons and the overall efficiency of the fabricated device. At a potential of 2.0 V, the measured values for Jph and dark current (Jo) stand at 0.11 and 0.04 mA.cm−2, respectively. The solar cell characteristics are further evaluated through measured values for JSC (−0.01 μA.cm−2) and VOC (0.038 V), reflecting the device’s performance under solar testing conditions. In addition to its solar cell attributes, the device exhibits light-sensing behavior, quantified through calculated photoresponsivity (R) and detectivity (D) values. These values, obtained under various monochromatic lights, amount to 0.49 mA.W−1 and 1.1 × 108 Jones, respectively. The exceptional performance of the CoO-CoS-P2AMB/Ppy thin-film solar cell device, coupled with its light-sensing capabilities, positions the device as a promising candidate for commercial applications. Its potential extends to the fabrication of cost-effective thin-film sensing devices, presenting opportunities for widespread utilization in various industries.

Temperature Dependency of Photoelectronic Properties of Group III-V Arsenide Solar Cell

This study explores the effect of temperature on different characteristics of Solar Cells (SC) composed of a structured III-V arsenide group. The temperature dependence of the SC characteristics was investigated numerically and by simulation. In both approaches, each characteristic was compared with a conventional Si SC. InAs showed superior stability and lower temperature sensitivity, as it has a negligible decrease of 0.098 eV in the energy bandgap, while the energy bandgaps of Si, AlAs, and GaAs are 0.129, 0.186, and 0.200 eV, respectively. Moreover, with a decay rate of 81.911 mV/°K, InAs exhibited the lowest temperature sensitivity in open-circuit voltage. InAs additionally demonstrated the least increase in degradation rate, while the SC power output is still a cause of concern. AlAs, Si, and GaAs had a total accumulative gradient change of 0.162, 0.136, and 0.034% in the degradation rate, respectively, while InAs showcased the highest stability by displaying a change of only 0.008%. A comparative analysis illustrated that among these III-V arsenide compounds, InAs had a rock-bottom sensitivity to temperature changes and better temperature stability in both numerical and simulation approaches.

Optimized parameter extraction techniques for enhanced performance evaluation of organic solar cells

The global energy landscape is in the midst of a transformative shift, compelled by the urgent need to reduce our reliance on fossil fuels and embrace eco-friendly alternatives. Organic photovoltaics (OPVs) have emerged as a promising alternative, offering the distinct advantage of performing well in low-light conditions, including indoor environments. Extensive research and development efforts are dedicated to realizing the full potential of OPVs as adaptable, cost-effective, and environmentally friendly solar energy solutions. This paper conducts a thorough examination of the intricate characterization of organic solar cells, with a specific emphasis on crucial parameters like power conversion efficiency, open-circuit voltage, and fill factor. The study utilizes a single diode model to simulate these cells' behavior, employing a meticulous process for parameter extraction. This method leverages Origin software and Python programming, incorporating open-source packages to ensure robust validation. This systematic and rigorous approach significantly enhances our comprehension of OPVs and plays a substantial role in optimizing their performance. In essence, this research represents a significant step forward in advancing sustainable energy technologies, laying a foundation for a greener and more environmentally conscious future.

Optical and electrical characterization of solar cell with nanowires mimicking antireflection coating layers considering axial and radial PN junctions

AbstractIt has been well documented that the usage of a textured cover layer reduces reflection from the air‐solar cell interface, which ultimately enhances the power conversion efficiency (PCE) of a solar cell. The most commonly used patterns, such as pyramids, micropillars, nanowires (NW), and nanoholes have been widely studied and optimized. Besides using such NWs to enhance light absorption, this work also additionally considers the concept of mimicking the antireflection coating of single or multiple layers in minimizing the reflectance and thus enhancing the total absorptance further. It is shown here that at least one order of magnitude shorter multilayer NW pattern of 268 nm total height can outperform a standard NW of 4270 nm height, which needs less material and can also be fabricated at a reduced cost. Furthermore, the proposed design with reduced height has a significantly lower surface‐to‐volume ratio, which also reduces surface recombination loss than the other textured surface patterns. The results presented in this work have been comprehensively analyzed by initially optimizing optical absorption and then completing the electrical simulations. The optimized design in conjunction with a back reflector offers an efficiency as high as 16.434%.

Numerical simulation based performance enhancement approach for an inorganic BaZrS3/CuO heterojunction solar cell

One of the main components of the worldwide transition to sustainable energy is solar cells, usually referred to as photovoltaics. By converting sunlight into power, they lessen their reliance on fossil fuels and the release of greenhouse gases. Because solar cells are decentralized, distributed energy systems may be developed, which increases the efficiency of the cells. Chalcogenide perovskites have drawn interest due to their potential in solar energy conversion since they provide distinctive optoelectronic characteristics and stability. But high temperatures and lengthy reaction periods make it difficult to synthesise and process them. Therefore, we present the inaugural numerical simulation using SCAPS-1D for emerging inorganic BaZrS3/CuO heterojunction solar cells. This study delves into the behaviour of diverse parameters in photovoltaic devices, encompassing efficiency (η) values, short-circuit current density (Jsc), fill factor (FF), and open-circuit voltage (Voc). Additionally, we thoroughly examine the impact of window and absorber layer thickness, carrier concentration, and bandgap on the fundamental characteristics of solar cells. Our findings showcase the attainment of the highest efficiency (η) values, reaching 27.3% for our modelled devices, accompanied by Jsc values of 40.5 mA/cm2, Voc value of 0.79 V, and FF value of 85.2. The efficiency (η) values are chiefly influenced by the combined effects of Voc, Jsc, and FF values. This optimal efficiency was achieved with CuO thickness, band gap, and carrier concentration set at 5 µm, 1.05 eV, and above 1019 cm−3, respectively. In comparison, the optimal parameters for BaZrS3 include a thickness of 1 µm, a carrier concentration below 1020 cm−3, and a band gap less than 1.6 eV. Therefore, in the near future, the present simulation will simultaneously provide up an entirely novel field for the less defective perovskite solar cell.

Modeling the current-voltage characteristics of Sb2Se3 thin film solar cells through Sah-Noyce-Shockley recombination model

This study investigates the impact of various material parameters, such as film resistivity, the thickness of the absorber layer, uncompensated acceptor density, and carrier lifetime, on the carrier transport and device characteristics of emerging CdS/Sb2Se3 thin-film solar cells. The modeling approach is based on the rigorous Sah-Noyce-Shockley recombination model at the PN-junction, which is based on drift and diffusion collection efficiencies for total current-density calculations. The current-density and voltage have been optimized against the Sb2Se3 thickness and the depletion width at the CdS/Sb2Se3 junction. It has been determined that the lower efficiency of the cell is primarily due to the relatively short electron lifetime and the uncompensated acceptor density, which can widen or narrow the depletion width. The resistivity of the Sb2Se3 film can effectively control the voltage of the cell, however, the carrier lifetime can control this impact even to a higher extent. Therefore, the carrier lifetime and uncompensated acceptor densities are the two interdependent parameters that significantly control the current, voltage, and efficiency of the Sb2Se3 solar cells. This research provides valuable insights for the design and optimization of Sb2Se3 thin-film solar cells shedding light on carrier transport and charge collection mechanism in these emerging materials.

Modeling the impact of grain size on device characteristics of Sb2Se3 solar cells

In this paper, we developed an analytical model to study the impact of grain size and the associated electrical parameters on the device characteristics and spectral response of Sb2Se3 antimony solar cells. Current-voltage characteristics as well as internal and external quantum efficiencies of the cell were modelled and the impact of grain size, effective intra-grain diffusion length, surface recombination velocity at grain boundaries, and carrier lifetime have been investigated. The profile of Electric field at the grain boundaries, the impact of grain size on the performance parameters of the cell have been investigated and the intra-grain diffusion length as an effective parameter on device performance parameters has been studied. The results indicate that a larger grain size is essential for surpassing recombination loss and improving the open-circuit voltage while a better carrier collection and spectral response can improve the short-circuit current density. A practical outcome of our study confirms the necessity of post-deposition surface passivation of Sb2Se3 absorber layers to surpass the recombination loss at grain boundaries and develop larger grains from an optimized deposition process to enhance the carrier collection for a more efficient and stable Sb2Se3 solar cell.

Impact of the gate work function on the experimental I-V characteristics of MOS solar cells simulated with the Sentaurus TCAD software

In this work, the influence of gate work function on the experimental J-VG characteristics of MOS solar cells was investigated with the aid of the Sentaurus TCAD for 2D numer-ical simulations of TiN/SiOxNy/Si Al/SiOxNy/Si and Al/MgO/Mg/SiOxNy/Si structures aiming at solar cells for en-ergy harvesting applications. The increase of the gate work function led to the increase of the reverse current density as pointed out by the Sentaurus TCAD simulations and by the ex-perimental J-VG characteristics. The work functions of Mg, Al, and un-annealed TiN used in the TCAD simulations were 3.7 eV, 4.1 eV, and 4.4 eV, respectively. It was observed that the onset voltage at 0.5 mA/cm2 in the forward-biasing region was at a lower voltage for TiN (~ - 0.06 V) compared to Al (~ - 0.42 V) and the Al/MgO/Mg stack (~ - 0.47 V). On the other hand, the current density increased steeply in the forward biasing for TiN and Al compared to the Al/ MgO/Mg stack gate and the thin MgO layer between Al and Mg worked as a potential barrier in an opposite direction to the potential barrier of the Mg/Si-OxNy/Si structure, which meant an onset voltage lowering for the Al/MgO/Mg/SiOxNy/Si solar cell. For the Al/MgO/Mg stack, the barrier effect of the MgO layer was fitted as a series re-sistance RS = 100 Ω and an equivalent Al/MgO/Mg work func-tion of 4.15 eV considering a substrate doping NA = 1.2x1016 cm-3 and parallel conductance GP = 0. Also, the experimental JxVG characteristic of the Al/SiOxNy/Si cell was fitted for Al work function of 4.10 eV, a series resistance RS = 100 Ω, a parallel resistance RP = 0.02 Ω (GP = 50 S) and a substrate doping NA = 5.5x1015 cm-3. In this case, the high parallel conductance fitted was attributed to the tunneling through the dielectrics as a pre-dominant effect possibly caused by a high concentration of de-fects in the SiOxNy layer. Finally, the MOS solar cell parameters were relatively lower compared to those of commercial outdoor solar cells, but the power generated by the MOS cells reached the mW range, and the conversion efficiency from light energy into electrical energy was higher (12.7%) than the typical values found for energy-harvesting solar cells.

LIFT metallization as an alternative to screen-printing for silicon heterojunction solar cells

The electrical characteristics of solar cells are significantly influenced by the metallization process, making it a crucial step. Screen printing is the standard metallization technique, but there is an increasing interest in the development of methods that allow more versatility, higher process control, and a more efficient use of the expensive metallic pastes used. We focus here on the comparison between the standard screen-printing method, and Light-Induced Forward-Transfer (LIFT), a non-contact, very precise technique, able to transfer volumes down to picolitres. The high flexibility, using free-form designs that do not depend on any mask or physical support, and the efficient use of the metallic paste with almost no waste, are other characteristics that point out LIFT as a very promising alternative. In this paper we include the electric characterization of contacts, and solar silicon heterojunction (SHJ) cells metalized with both techniques. The results show a slightly better efficiency for the screen-printed cells, but good series resistance and fill factor values imply that LIFT is a promising alternative for device metallization.

Science in 2025-2027 and the SPQEO journal

Relevance of recent research is important for scientists and journals reporting research results. There are many sources of prognoses and one of them is the Report of European Commission "Looking into the R&I future priorities 2025-2027". It predicts the importance of the following areas for users: healthcare, energy, climate, sustainability and digitalization. The Ukrainian journal Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) actually focuses on these areas and contributes to the development of related knowledge. Monitoring of last SPQEO issues shows some interesting results: (i) the effect of local field amplification, which causes emergence of ponder motive forces acting on viruses until destruction of viral envelopes; (ii) the methods of malignant tumors treatment taking into account their genesis mechanisms and focusing on correction of definite pathogenesis components, while being nontoxic for other organs and tissues; and (iii) manipulation of the spectral characteristics of a “polycarbonate matrix – gold nanostructures – HTTH dye” system due to influence of gold nanostructures. SPQEO paid attention to the improvement of solar cells (SCs) by considering physical effects such as the effect of space charge region (SCR) recombination on the key characteristics of high-efficiency silicon solar cells, such as photovoltaic conversion efficiency and open-circuit voltage, is not only dependent on the charge-carrier lifetime in the SCR, but also on the ratio of hole-to-electron-capture cross section, σp/σn. Non- traditional SCs were also considered: SCs with perovskite thin films, SCs comprising CdS/CIGS heterojunctions, and vitamin B12-patterned silicon hybrids based SCs. Moreover, SPQEO also covers research results in the fields of quantum devices, diamond- like and oxide films, and light-emitting diodes.

Systematic Investigation of the Optical Characteristics of GaAs Solar Cells with Antireflection Coatings and Metallic Nanoparticles Using Finite Element Analysis

Systematic Investigation of the Optical Characteristics of GaAs Solar Cells with Antireflection Coatings and Metallic Nanoparticles Using Finite Element Analysis

Optimization design of surface optical characteristics of space solar cells based on transfer matrix method

The antireflection coating (ARC) can improve the photoelectric conversion efficiency of photovoltaic (PV) cells. In this paper, the influence of film thickness and refractive index of single-layer and double-layer ARC on solar light absorption under different spectral conditions is simulated by the transfer matrix method. The optimum values of ARC film thickness and refractive index are obtained. To optimize it at AM 0 (air mass 0) solar irradiance, a 66 nm thick SiN x ARC with a refractive index of 2.0 was used. The PV cell’s maximum power density is 89.87. The maximum power density of the PV cell with double-layer SiN x as ARC is 90.94. This work provides a theoretical basis for the application of ARC in ground PV power generation systems and space solar power systems.

Iron-Sensitized Solar Cells (FeSSCs).

ConspectusThe harvesting and conversion of solar energy have become a burning issue for our modern societies seeking to move away from the exploitation of fossil fuels. In this context, dye-sensitized solar cells (DSSCs) have proven to be trustworthy alternatives to silicon-based cells with advantages in terms of transparency and efficiency under low illumination conditions. These devices are highly dependent on the ability of the sensitizer that they contain to collect sunlight and transfer an electron to a semiconductor after excitation. Ruthenium and polypyridine complexes are benchmarks in this field as they exhibit ideal characteristics such as long-lasting metal-ligand charge transfer (MLCT) states and efficient separation between electrons and holes, limiting recombination at the dye-semiconductor interface. Despite all of these advantages, ruthenium is a noble metal, and the development of more sustainable energy devices based on earth-abundant metals is now a must. A quick glance at the periodic table reveals iron as a potential good candidate, since it belongs to the same group of ruthenium, which suggests similar electronic properties. However, striking photophysical differences exist between ruthenium(II) polypyridyl complexes and their Fe(II) analogues, the latter suffering from short-lived MLCT states resulting of their ultrafast relaxation into metal-centered (MC) states. Pyridyl-N-heterocyclic carbenes (pyridylNHC) brought a strong σ-donor character required to promote a higher ligand field splitting of the iron d orbitals. This induces destabilization of the MC states over the MLCT manifold and a consequent slowdown of the excited states deactivation providing iron(II) complexes with tens of picoseconds lifetimes, making them more promising for applications in DSSCs. This Account highlights our recent advances in the development and characterization of iron-sensitized solar cells (FeSSCs) with a focus on the design of efficient sensitizers going from homoleptic to heteroleptic complexes (bearing different anchoring groups) and the tuning of electrolyte composition. Our rational approach led to the best photocurrent and efficiency ever reported for an iron sensitized solar cell (2% PCE and 9 mA/cm2) using a cosensitization process. This work clearly evidences that the solar energy conversion based on iron complex sensitization is now an opened and fruitful route.

A A highly efficient InGaP thin film solar cell structure, optimization and characteristics

Inorganic solar cells based on III-V semiconductor materials are widely used owing to their high efficiencies. In this work, we aim to improve the performance of the single heterojunction solar cell InGaP. The InGaP cell is constituted of a back surface field (BSF), a base, an emitter and a window layer with InAlAsP material. The simulation is done after optimization, modeling, and choice of the used materials and the thickness of different layers constituting the solar cell. The choice of materials whose gap energy is decreasing allows the absorption of the solar spectrum in its almost totality. Then, we varied the temperature to know its effects on the gap energy and the efficiency of the InGaP cell. The InGaP and solar cell with optimal parameters are illuminated by an AM1.5 solar spectrum through InAlAsP window layer. The simulation and optimization at 300K of short circuit current parameters (Jsc), open circuit voltage (Voc), fill factor (FF) and efficiency (?) are done using Tcad Silvaco software. The characteristics obtained are: the minimized thickness of 665 nm, electrical efficiency is about ? = 21.87% for InGaP cell, Jsc = 14.43 mA/cm2, Voc = 1.63 V, and FF = 91.21 %.

Hysteresis and Its Correlation to Ionic Defects in Perovskite Solar Cells.

Ion migration has been reported to be one of the main reasons for hysteresis in the current-voltage (J-V) characteristics of perovskite solar cells. We investigate the interplay between ionic conduction and hysteresis types by studying Cs0.05(FA0.83MA0.17)0.95Pb(I0.9Br0.1)3 triple-cation perovskite solar cells through a combination of impedance spectroscopy (IS) and sweep-rate-dependent J-V curves. By comparing polycrystalline devices to single-crystal MAPbI3 devices, we separate two defects, β and γ, both originating from long-range ionic conduction in the bulk. Defect β is associated with a dielectric relaxation, while the migration of γ is influenced by the perovskite/hole transport layer interface. These conduction types are the causes of different types of hysteresis in J-V curves. The accumulation of ionic defects at the transport layer is the dominant cause for observing tunnel-diode-like characteristics in the J-V curves. By comparing devices with interface modifications at the electron and hole transport layers, we discuss the species and polarity of involved defects.

Characterization of a Heterojunction Silicon Solar Cell by Means of Impedance Spectroscopy.

Impedance spectroscopy provides relevant knowledge on the recombination and extraction of photogenerated charge carriers in various types of photovoltaic devices. In particular, this method is of great benefit to the study of crystalline silicon (c-Si)-based solar cells, a market-dominating commercial technology, for example, in terms of the comparison of various types of c-Si devices. This study investigates the dark and light electrophysical characteristics of a heterojunction silicon solar cell fabricated using plasma-enhanced chemical vapor deposition. The measurements are performed at various applied biases, enabling the determination of complex resistance, characteristic time, capacitive response and impurity concentration within the semiconductor junction and to correlate them with the device performance. In addition, the impedance spectra of the studied cell were investigated as a function of temperature. Studies of the frequency and temperature dependences of capacitance do not reveal a significant presence of thermally activated centers of free carrier capture, concomitant with a very small value of the activation energy extracted from an Arrhenius-type analysis. This leads to a conclusion that these centers are likely not impactful on the device operation and efficiency.