Characteristics Of Photodetectors Research Articles

Si-H Hydrosilane Reducing Agents for Size- and Shape-Controlled InAs Colloidal Quantum Dots.

InAs colloidal quantum dots (CQDs) are a promising heavy-metal-free material for infrared optoelectronic devices. However, their synthesis is limited by their reagents: the acutely toxic and difficult to source tris(trimethylsilyl)arsine ((TMS)3As), as well as the strong reducing agents (e.g., Super Hydride). A reducing agent is introduced based on hydrosilanes (Si-H) to address both challenges. A synthesis strategy with this agent is demonstrated, resulting in monodisperse InAs CQDs with a tunable first excitonic peak between 520 and 900nm by hot injection, and between 900 and 1550nm by continuous injection. Furthermore, by avoiding the use of carboxyl group-containing compounds, such as oleic acid or indium acetate, the synthesis minimizes surface oxidation during InAs CQDs formation. The synthesized InAs CQDs are of high optoelectronic quality, with a lower concentration of deep trap states, as evident by the remarkable characteristics of photodetectors fabricated from these CQDs: low dark current (≈150 nAcm-2), external quantum efficiency (32% at 900nm), and a fast photoresponse time (≈4.4 µs). The elimination of (TMS)3As in the synthesis overcomes a key practical barrier for exploiting and exploring the properties of large InAs CQDs in optoelectronic applications.

Insight into gain and transient response characteristics of AlGaN/GaN hetero-junction based UV photodetectors: Case study on the role of incident light intensity

Gain and response speed are two key performance parameters for high sensitivity photodetectors (PDs). However, the effect of incident light intensity on gain and transient response properties of AlGaN/GaN hetero-junction based PDs are still not fully understood. Here, we design and fabricate an AlGaN/GaN hetero-junction based ultraviolet (UV) PD with interdigitated electrodes formed by a conductive two-dimensional electron gas (2DEG) channel, which exhibits a low dark current of 2.92 × 10−11 A and a high responsivity of 3060 A/W at 10 V bias. The high-gain AlGaN/GaN 2DEG PD has a similar working mechanism to those of traditional phototransistors, but its device architecture is evidently simplified. By investigating the variation of gain and transient response characteristics of the 2DEG PD as a function of incident UV light intensity, it has been concluded that the gain of the PD in a low-light intensity region is dominated by hole accumulation-induced electron escape from the 2DEG, while in a high-light intensity region, the gain is dominated by photoconductivity effect and limited by carrier recombination. This study provides guidance for future practical applications of AlGaN/GaN-based PDs in complex UV illumination environments.

Room-temperature infrared photoluminescence and broadband photodetection characteristics of Ge/GeSi islands on silicon-on-insulator

In this study, molecular beam epitaxial growth of strain-driven three-dimensional self-assembled Ge/GeSi islands on silicon-on-insulator (SOI) substrates, along with their optical and photodetection characteristics, have been demonstrated. The as-grown islands exhibit a bimodal size distribution, consisting of both Ge and GeSi alloy islands, and show significant photoluminescence (PL) emission at room temperature, specifically near optical communication wavelengths. Additionally, these samples were used to fabricate a Ge/GeSi islands/Si nanowire based phototransistor using a typical e-beam lithography process. The fabricated device exhibited broadband photoresponse characteristics, spanning a wide wavelength range (300-1600 nm) coupled with superior photodetection characteristics and relatively low dark current (∼ tens of pA). The remarkable photoresponsivity of the fabricated device, with a peak value of ∼11.4 A W-1(λ∼ 900 nm) in the near-infrared region and ∼1.36 A W-1(λ∼ 1500 nm) in the short-wave infrared (SWIR) region, is a direct result of the photoconductive gain exceeding unity. The room-temperature optical emission and outstanding photodetection performance, covering a wide spectral range from the visible to the SWIR region, showcased by the single layer of Ge/GeSi islands on SOI substrate, highlight their potential towards advanced applications in broadband infrared Si-photonics and imaging. These capabilities make them highly promising for cutting-edge applications compatible with complementary metal-oxide-semiconductor technology.

Fabrication and characterization of photodetector using solvothermally synthesized p-CZTS/Se nanocrystals and n-Si heterojunction

Fabrication and characterization of photodetector using solvothermally synthesized p-CZTS/Se nanocrystals and n-Si heterojunction

Pt/ZnO and Pt/few-layer graphene/ZnO Schottky devices with Al ohmic contacts using Atlas simulation and machine learning

The search for highly efficient photodetectors, driven by various applications ranging from environmental monitoring to communication systems and imaging, continues to drive research into novel materials and innovative device architectures. This paper offers an in-depth comparative analysis to optimize the performance of two types of Schottky ultraviolet (UV) photodetectors: platinum (Pt)/zinc oxide (ZnO) and Pt/few-layer graphene (FLG)/ZnO, both featuring aluminum (Al) ohmic contacts. The study systematically examines and compares the electrical and optical characteristics of these two photodetector configurations using the Silvaco TCAD simulation tool and machine learning regression models. The research outcomes demonstrate that the proposed photodetector configurations exhibit remarkable improvements, showcasing their substantial potential for superior performance in UV applications. The Pt/ZnO photodetector demonstrates a dark current density of 8.2 × 10−11 pA/cm2, a photocurrent density of 0.26 μA/cm2, a 3-dB cut-off frequency of 85.4 GHz, an external quantum efficiency of 90.41%, and an external photocurrent responsivity of 0.26A/W, at a bias of −1.0 V. On the other hand, Pt/FLG/ZnO photodetector demonstrates near zero dark current density, a photocurrent density of 0.2 μA/cm2, a 3-dB cut-off frequency of 2.44 THz, an external quantum efficiency of 68.52%, and an external photocurrent responsivity of 0.2 A/W at a bias of −1.0 V. Furthermore, a comprehensive comparative analysis of various machine-learning regression models is conducted, validating the simulation findings and providing a predictive framework for optimizing the photodetector's performance. Each machine-learning regression model is evaluated by getting root mean squared error and R2 values across different test set sizes to assess their accuracy in predicting the photodetector's characteristics. This study underscores the promising role of cutting-edge materials and computational techniques in advancing the development of next-generation optoelectronic devices with enhanced capabilities and performance.

High Performance Infrared InAs Colloidal Quantum Dot Photodetector with 79% EQE Enabled by an Extended Absorber Layer

AbstractColloidal quantum dots (CQDs) with tunable bandgaps in the NIR‐SWIR range are highly valued for infrared applications including LiDAR, interactive displays, and biometrics. Particularly, for environmental considerations, photodetectors (PDs) using InAs CQDs are actively being explored. However, their performance still lags behind that of Pb‐based devices. Herein, an effective strategy to improve the photodetection characteristics of InAs CQD PDs by enhancing the incident photon usage is presented. By engineering the solvent of InAs CQD ink to increase volatility, the controllable range of absorber layer thickness is substantially extended. Then, the thickness‐ and bias‐dependent performance of InAs CQD PDs are systematically studied, guided by optical simulations. Under optimal conditions, an external quantum efficiency (EQE) of 79%, a responsivity of 0.6 AW−1–the highest reported for InAs CQD photodiodes, and a detectivity of 3.1 × 1011 Jones at 940 nm are achieved. Furthermore, it is found that increasing the absorber layer thickness reduces device capacitance, resulting in a faster response time of 46 ns. This study provides optical and electrical insights into how absorber layer thickness affects InAs CQD PD performance and outlines design principles for high‐performance optoelectronic devices with specified light‐absorbing layers, paving the way for the development of advanced optoelectronic devices.

Metal-semiconductor-metal UVA photodetector based on TiO2 thin films synthesized via liquid phase deposition method

In this work, titanium dioxide (TiO2) thin film-based metal-semiconductor–metal (MSM) ultraviolet (UV) photodetectors (PDs) were fabricated on glass substrates via liquid phase deposition (LPD) technique at various deposition time in the range of 3–6 h. Varying deposition time significantly impacted the physical properties of the films. Increasing the deposition time revealed a mixture of clusters and hexagonal-like structures in film’s morphology. The energy band gap of the TiO2 films decreased from 3.30 to 3.09 eV upon increasing the deposition time. Photodetection characteristics were examined by exposing the MSM UV PD to 390 nm UV light with an intensity of 1.6 mW cm−2 and a bias voltage of 5 V. The fabricated PDs implied characteristics of I-V ohmic contact. The optimum photodetection characteristics were achieved for TiO2 film deposited at 6 h which exhibited 36.9 μA maximum photocurrent, 20080.3% sensitivity, 201.80 gain, 225 mA W−1 responsivity, 81.07% external quantum efficiency, 0.276 s response time, and 0.274 s recovery time. The photoelectric properties of the films were strongly affected by the increased grain size and improved crystallinity of the films due to the prolonged deposition time. The optimum film demonstrated its potential to be a promising candidate for UV PD applications.

Investigating the role of Ag-doped ZnO thin films in UV photodetectors produced via laser assisted chemical bath growth technique

This study introduces the innovative fabrication of Ag-doped ZnO thin films (AgxZnO(100−x) TFs) with varying silver (Ag) concentrations (x) of 0.5, 1.0, 1.5, and 2.0 at% on glass substrates using a simple and cost-effective method known as laser-assisted chemical bath growth (LACBG). This process aims to create metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors. A continuous wave semiconductor laser with a 444.5 nm wavelength, 5 W power, and 6 min irradiation time was employed to synthesize high-quality Ag-doped ZnO TFs on the glass substrate. Ag electrodes were utilized as Schottky contacts to form MSM UV photodetectors. Structural and morphological analyses conducted using XRD and SEM revealed vertically aligned nanorods and nanoflowers with a high c-axis orientation and hexagonal wurtzite facets, while EDX confirmed Ag incorporation into the ZnO lattice. The UV–Visible absorbance spectra indicated a decrease in bandgap from 3.28 to 2.84 eV with increased Ag content. The current-voltage (I–V) characteristics of the Ag-doped ZnO TFs UV photodetector showed significantly enhanced conductivity at a 2.0 at% concentration level, achieving a responsivity of 10.78 A/W, an external quantum efficiency of 34.67 % at −3 V bias voltage. Finally, the modified device exhibited a sensitivity of 14661.9 %, a gain of 147.62, and a detectivity of 2.25 ×107 Jones, demonstrating its suitability for optoelectronic applications.

Development of photovoltaic and photodetection characteristics in CdS/P3HT devices through Al-doping

CdS thin films were deposited by chemical bath deposition onto FTO substrates with Al concentrations of 0, 1, 3, 5 and 6 %. X-ray diffraction revealed introduction of 1 % Al-doping reduced dislocation density and enhanced the crystal quality of CdS. Scanning electron microscopy confirmed a reduction in grain size in Al-doped CdS films compared to CdS. N3 and P3HT layers were spin-coated onto the prepared substrates, respectively. The fabrication of the solar cells was completed using Ag silver paste for the top contact. The lowest photoluminescence peak intensity was achieved for CdS (3 %Al):P3HT solar cell, indicating efficient exciton dissociation. 3 % Al-doped CdS-based device exhibited the highest efficiency at 0.210 %, nearly seven times that of reference device. CdS (3 %Al):P3HT device demonstrated the best photodetection characteristics, with a responsivity of 2.2 × 10-2 A/W, detectivity of 3.3 × 108 Jones, response time of 13 ms, and recovery time of 12 ms at zero bias voltage.

Effect of coating temperature on the properties of CdS thin films coated by nebulizer spray pyrolysis method for photodetection applications

Nanostructured CdS-based photodetectors have been focused on recent years because of their high photosensitivity and quick response time. This work reports the photodetector characteristics of CdS thin films prepared using a nebulizer-assisted spray pyrolysis technique by varying substrate temperatures. The X-ray diffraction (XRD) pattern of CdS films exhibits hexagonal structure with orientation along the (002) plane and CdS films deposited at 450 °C exhibits a higher crystallite size of 53 nm. Morphological analysis shows that the small grains become large spherical flakes at higher substrate temperatures. The optical studies showed that around the visible region, the films exhibit solid optical absorbance, and when substrate temperatures rise to 450 °C, the energy bandgap value decreases to 2.29 eV. The photoluminescence (PL) spectra exhibit two emission peaks: a broad peak at 525 nm and a sharp dominant peak at 680 nm. The CdS thin film deposited at 450 °C produced the highest photoresponsivity (R) of 37.1 × 10-2 A/W, detectivity (D*) of 268 x108 Jones, external quantum efficiency (EQE) of 120 %, and response/recovery times of 0.92/0.28 s under 532 nm illumination. The study suggests that CdS thin films are suitable for visible photodetector applications due to their simple and cost-effective production process.

Hydrogel Based UV Photodetector Based on Polarization of Free Water Molecules

AbstractConductive hydrogels retain the intrinsic softness and elasticity that are hallmark features of traditional hydrogels, and they also assimilate the electrical properties of the embedded conductive materials. Conventional epitaxial growth techniques for heterojunctions require precise lattice matching between adjacent materials, significantly limiting technological advancements in photodetector innovation. The integration of conductive hydrogels with semiconductors to fabricate photodetectors presents a feasible solution that bypasses the traditional lattice matching constraints inherent in the epitaxial growth of heterojunction semiconductor photodetectors. Herein, device integration is enhanced by developing a transparent conductive hydrogel, positioned between graphene and gallium nitride, which effectively mitigates the fluidity issues of the polar liquid complicating device encapsulation. A comprehensive analysis of the photodetection characteristics of the graphene/conductive hydrogel/gallium nitride heterostructure is conducted, thereby establishing its structural framework. Flexible transparent devices are further prepared based on PEDOT/Alg (Ca2+) and demonstrate their potential application in 360° omnidirectional photodetection. This work introduces a novel approach for the enhanced integration of hydrogel‐based spectrally selective and flexible transparent photodetectors.

Characterization of fully-evaporated perovskite solar cells and photodetectors under high-intensity pulsed proton irradiation

This study investigates the impact of proton irradiation on perovskite devices fabricated fully through vacuum deposition. Exposure to irradiation induces changes in both electrical and optical properties. The analysis reveals that the main factors influencing the observed performance changes in solar cells are a significant reduction in shunt resistance and a minor increase in series resistance, with minimal alterations in recombination dynamics. Remarkably, the devices maintain promising photodetector characteristics both before and after proton irradiation, particularly in a self-powered mode without a reverse bias. These findings provide valuable insights into the resilience of vacuum-deposited perovskite devices against ionizing radiation, highlighting their potential for applications in radiation-prone environments, such as the nuclear industry or space exploration.

Enhancement of Photodetector Characteristics by Zn-Porphyrin-Passivated MAPbBr3 Single Crystals.

Perovskite single crystals have garnered significant interest in photodetector applications due to their exceptional optoelectronic properties. The outstanding crystalline quality of these materials further enhances their potential for efficient charge transport, making them promising candidates for next-generation photodetector devices. This article reports the synthesis of methyl ammonium lead bromide (MAPbBr3) perovskite single crystal (SC) via the inverse-temperature crystallization method. To further improve the performance of the photodetector, Zn-porphyrin (Zn-PP) was used as a passivating agent during the growth of SC. The optical characterization confirmed the enhancement of optical properties with Zn-PP passivation. On single-crystal surfaces, integrated photodetectors are fabricated, and their photodetection performances are evaluated. The results show that the single-crystalline photodetector passivated with 0.05% Zn-PP enhanced photodetection properties and rapid response speed. The photoelectric performance of the device, including its responsivity (R), external quantum efficiency (EQE), detective nature (D), and noise-equivalent power (NEP), showed an enhancement of the un-passivated devices. This development introduces a new potential to employ high-quality perovskite single-crystal-based devices for more advanced optoelectronics.

84‐3: Breakthrough for Test Cost Reduction on Micro‐LED Device with High Parallel Single Insertion Testing of Electric‐Luminescence including External Quantum Efficiency and Electrical Test

The biggest challenge in launching Micro‐LED displays is cost reduction. In our previous report (1), we proposed a super cost‐effective test method embedding EL and electrical testing (PEMPTM ). In this paper, we report the validity of PEMPTM by comparing the external quantum efficiency (EQE) of LED emission and photodetection characteristics.

New polymeric nanocomposite thin films for transparent optoelectronics: Impact of In(acac)3 on the structural, optical and photoelectrical characteristics of PVA films

Concerning the rapid progress in elastic and transparent optoelectronics, the need for cost-effective materials for transparent optoelectronic devices has become a mainstream research trend. Therefore, this report aimed to explore the modifications of the PVA characteristics due to In(acac)3 doping. New PVA:In(acac)3 nanocomposite thin films were fabricated using a cost-effective and facile spin-coating technique with varying the In(acac)3 loading concentration. The structural and molecular feature variations of PVA have been tracked using XRD and FTIR techniques, respectively. Furthermore, by varying In(acac)3′s concentration, the fabricated films' linear/nonlinear optical properties have been investigated symmetrically using the UV–visible-NIR spectrophotometric technique. The measured transmittance spectra of the prepared films showed the tunability of the energetic position of the fundamental edge while conserving the high transparency. The energy gap and Urbach energy of the prepared thin films have been calculated as a function of doping concentration. The nonlinear refractive index and optical susceptibilities were estimated for all the fabricated films. On the other hand, the photodetection response of the fabricated Schottky barrier devices was tested. The fabricated devices showed pronounced UV response, where the photocurrent density was significantly enhanced under UV illumination up to 0.1 mA/cm2 for the 20 wt.% In(acac)3 doped films. The photodetection performance of the manufactured nanocomposite thin films under repeatable On/Off switching cycles was tested. The optimum doping concertation of In(acac)3 was determined in terms of the analyzed optical and photodetection characteristics to be 20 wt.%. The obtained results support the careful reconsideration of the possibility of exploiting some cheap polymers as important components in advanced optoelectronic applications.

Enhanced photovoltaic response in WSe2 photodetector with asymmetric two-dimensional contacts

Asymmetric contact pairs with different work functions provide an efficient method to extract photogenerated carriers in optoelectrical devices. Specifically, vertical optoelectrical devices based on two-dimensional (2D) materials utilize graphene layers as the bottom and top contacts. Whereas an additional terminal is required for electrostatic doping in either top or bottom graphene to enlarge the built-in electric field. Herein, we present an enhanced photovoltaic response in a vertical WSe2 photodetector utilizing asymmetric 2D contacts. A graphite layer and a degenerate SnSe2 are used as the top and bottom contacts, respectively, with a significant difference in their work functions. By establishing a large built-in electric field across the vertical WSe2 layer, a strong photovoltaic effect is achieved, resulting in an open-circuit voltage of 0.37 V and a short-circuit current of 0.42 μA under 532 nm illumination. The device shows high-performance photodetection characteristics, with a responsivity of 32.04 A W−1, external quantum efficiency of 7475%, and specific detectivity of 3.61 × 1012 Jones. Furthermore, the device can generate a maximum output electrical power of 70.9 nW, enabling a high-power conversion efficiency of 3.5%.

Investigation of photosensitive and photodetector characteristics of n-TPA-IFA/p-Si heterojunction structure

n-TPA-IFA organic material was synthesized and deposited on p-Si by spin coating method to produce n-TPA-IFA/p-Si heterojunction diode. We determined that the dielectric constant and energy band gap of TPA-IFA organic material were 3.91 and 3.37 eV by DFT/B3LYP/6-311G(d,p) method using on Gaussian 09 W, respectively, and the carrier type of TPA-IFA organic semiconductor material was also n-type at room temperature from temperature-dependent hall effect measurements. Using forward and reverse bias I–V measurements in the dark and under various light intensities, we examined the key electrical characteristics of the n-TPA-IFA/p-Si heterojunction diode, including Φb\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${\\Phi }_{b}$$\\end{document} and n\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$n$$\\end{document}. It was determined that the rectification ratio (RR) was approximately 104. The reverse current's observed increasing behavior with increasing light indicates that the produced heterojunction diode can be utilized as a photodiode, detector, or sensor. The values of n, Φb\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${\\Phi }_{b}$$\\end{document}, and Io were determined using I–V data in dark as 1.34, 0.91 eV, and 7.25 9 10–12 A, respectively. On the other hand, when the n-TPA-IFA/p-Si heterojunction diode is exposed to 100 mW/cm2 illumination, these parameters were obtained as 1.85, 0.80 eV, and 5.11 9 10–10 A, respectively. Photovoltaic parameters such as short circuit current (Isc) and open circuit voltage (Voc) were determined as 0.018 mV, 0.08 A and 0.050 mV, 0.29 A under 20 mW/cm2 light and 100 mW/cm2 light intensity, respectively. The photodetector properties of n-TPA-IFA/p-Si heterostructure were explored at different light intensities, and the photoresponsivity (R), photosensitivity (PS), specific detectivity (D∗\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${D}^{*}$$\\end{document}), and linear dynamic range (LDR) of the heterojunction changed with reverse voltage and light intensity. It was found that as light intensity increased, the linear dynamic range (LDR), a crucial characteristic for image sensors, increased as well (10.15 dB and 18.84 dB for 20 and 100 mW/cm2).

UV photodetectors based on W-doped ZnO thin films

W-doped ZnO thin films deposited on Si substrates with (100) orientation by sol–gel spin coating method at temperature 500 °C. W/Zn atomic ratio varies from 0% to 4%. Then, the UV detection performance analysis of p–n heterojunction UV photodetectors based on W-doped ZnO/Si is analyzed. The current–voltage curves of W-doped ZnO/Si are investigated in dark and exhibit diode-like rectifying behavior. Among doped ZnO/Si, sample with atomic ratio of W/Zn = 2% is the best candidate to study photodetector characteristics in UV range. The resulting device exhibits a rectification ratio RR of 5587 at ±5 V, a higher responsivity of 3.84 A W−1 and a photosensitivity value of 34 at 365 nm under 0.5 mW cm−2. The experimental findings reveal that the UV detection performance of the heterojunction-based photodetectors strongly dependent on the properties of metal oxide layer. The main goal of this work is to investigate the effect of W doping on the performance of ZnO/Si based photodetectors. Based on our results, it is observed that 2 at% of W dopant is the optimum amount of doping for high performance photodetector of ZnO:W/Si heterojunction thanks to the suppressed recombination ratio and enhanced carrier separation properties in the depletion zone.

Photodetection Enhancement of PdSe2/ReSe2 Van der Waals Heterostructure Field‐Effect Transistors: A Density Functional Theory‐Guided Approach

AbstractThe fabrication of van der Waals heterostructures (vdWHs) has drawn considerable interest because of their wide range of functionalities. Herein, a novel PdSe2/ReSe2 vdWHs with gate‐tunable rectification behavior and excellent broadband photodetection characteristics is presented. The application of the gate bias substantially enhances the rectification behavior, with the highest rectification ratio (≈3.13 × 103) observed at gate voltage Vg = −60 V. The density functional theory calculations demonstrate the direct and indirect bandgap behavior of PdSe2 and ReSe2 in the monolayer structure, respectively. Additionally, the PdSe2/ReSe2 heterojunction displays a strong photo‐response in the near‐infrared region and achieves a high photoresponsivity, an excellent external quantum efficiency, and rapid rise and decay times of 1.7 × 103 A W−1, 4.05 × 103, and 5 and 20 ms, respectively. Furthermore, the device exhibits a remarkable detectivity of ≈3.5 × 1012 Jones. The findings hold great potential for advancing the fabrication of multifunctional vdW heterostructure devices.

Multilayered BCST/PZT thin films on GaN substrate for ultraviolet photodetector applications

In the realm of photodetection, there has been growing interest in Ferroelectric/semiconductors heterostructures due to the interfacial charge coupling resulting from ferroelectric polarization. In this study, we created a thin film consisting of alternating layers of Ba0.86Ca0.14Ti0.9Sn0.1O3 and PbZr0.52Ti0.48O3 (referred to as BCST/PZT) using a sol-gel growth method on a (0001) GaN/c-sapphire template. Our objective was to examine the impact of these films on the optoelectronic properties of ferroelectric/GaN heterojunctions. Our findings indicate that the BCST/PZT multilayer films possess improved ferroelectric properties. Furthermore, the multilayer structure demonstrates outstanding optoelectronic performance compared to the individual BCST/GaN or PZT/GaN structures, particularly within the 1 V to 3 V bias range. Notably, the multilayer thin film/GaN devices exhibit a responsivity of 121.4 mA/W and a detectivity of 1.44 × 1011 Jones under a 1 V bias voltage. In contrast to other GaN-based materials documented in the literature, our straightforward sol-gel techniques yielded devices exhibiting UV photodetection characteristics that are either comparable to or superior than those reported.