After the unique properties of graphene were realized, scientists began seeking other types of atomically thin materials that exhibited similar attractive and exciting properties. There is now a range of materials including single element (e.g. phosphorene) and compounds (e.g, transitional metal dichalcogenides and MXenes) that show promise for electronic, quantum, superconducting and optoelectronic applications. As with any new material, understanding structure and inherent defects is an important part to optimizing performance in these materials for their intended applications.Manufacturing optimized devices that incorporate newly-emerging materials requires predictable performance throughout device lifetimes. Unexpected degradation in device performance, sometimes leading to failure, is often traceable to poor material reliability. Reliability is rooted in the stability of the atoms making up a material, and is determined by geometry, microstructure, chemistry, dimensional scale, proximity to other materials, and exposure to external stressors. Integration of powerful characterization techniques and reliability tests of materials under operational conditions improves fundamental understanding and accelerates development of highly-reliable materials and devices.This talk will cover recent work on 2D materials characterization and reliability testing of these materials with the ultimate goal of manufacturability. Characterization of defects, primarily with transmission-SEM, to characterize diverse 2D materials (e.g., topological insulators, transition metal dichalcogenides, semiconductors) will be demonstrated. Initial measurement results to understand the impact of reliability challenges (e.g. electrical, thermal) the material may experience during manufacturing will be discussed. The advancement of this work to identify potential device configurations, material interfaces and use conditions that will be problematic will be presented.