Characteristics Of Field Emitter Arrays Research Articles

Space charge effects on the I-V characteristics of field emission arrays

Field emission arrays (FEAs) are good candidates for the use as field emitters. The field emission due to quantum mechanical tunneling is described by the well-known Fowler-Nordheim (FN) equation. The FN plots are widely employed to fit the experimental data. In recent experiments of field emission arrays, the results show that the FN plots become nonlinear and are apart from the prediction of the conventional FN theory. In this work, space charge effects on the I-V characteristics of the FEAs that may be operated at high current density are investigated. Within the framework of the effective work function approximation, a good fit to the I-V characteristics of FEAs can be generated by solving the FN equation and Poisson’s equation for planar space-charge-limited field emission self-consistently. This solution has been verified by the finite-difference time-domain particle-in-cell simulation. The theoretical results also show good agreement in comparison with some experimental results. This indicates that the space charge effects play an important role in the saturation behavior of field emission arrays.

Simple fabrication process of a screen-printed triode-CNT field emitter array

We introduced a simple fabrication process for field emission devices based on carbon nanotubes (CNTs) emitters. Instead of using the ITO material as a transparent electrode, a metal (Au) with thickness of 5–20 nm was used. Moreover, the ITO patterning process was eliminated by depositing metal layer, before the CNT printing process. In addition, the thin metal layer on a photoresist (PR) layer was used as UV block. We fabricated the CNT field emission arrays of triode structure with a simple process. And I– V characteristics of field emission arrays were measured. The maximum current density of 254 μA/cm 2 was achieved when the gate and the anode voltages were kept 150 and 3000 V, respectively. The distance between anode and cathode was kept constant.

The Influence of Gate Insulator Etching on the Characteristics of Mo Tip Field Emitter Arrays

AbstractElectron emission characteristics of field emitter arrays (FEAs) as etched shape of gate‐insulating opening were investigated by the measurement of anode and/or gate leakage current and voltage. In this study, we introduced a hybrid etching process, which etches the gate insulator wet and dry process sequentially. We also compared electron emission characteristics of FEAs as a function of etching process to form the gate‐insulating opening. The current density of field emitter arrays (FEAs) with new type of gate‐insulating opening is lower than that of FEAs with vertically etched shape of gate‐insulating opening. The electric field of FEAs made by hybrid process is higher than that of FEAs by using wet etching process to form the gate‐insulating opening. Thus, introduced hybrid‐etching process can optimize the gate‐insulating opening of FEAs.

Si Field Emitter Arrays Fabricated by Anodization and Transfer Technique

Field emitter arrays made of single-crystal Si are fabricated by anodization and transfer techniques. The anodization of Si which has n/p junctions produces field emitter tips. The emitter tips are then transferred to another Si substrate by the direct bonding. It has been found that an optimum doping range exists for successful bonding and transfer of the emitter tips. Field emission characteristics of field emitter arrays thus fabricated are also reported.