Abstract
AbstractElectron emission characteristics of field emitter arrays (FEAs) as etched shape of gate‐insulating opening were investigated by the measurement of anode and/or gate leakage current and voltage. In this study, we introduced a hybrid etching process, which etches the gate insulator wet and dry process sequentially. We also compared electron emission characteristics of FEAs as a function of etching process to form the gate‐insulating opening. The current density of field emitter arrays (FEAs) with new type of gate‐insulating opening is lower than that of FEAs with vertically etched shape of gate‐insulating opening. The electric field of FEAs made by hybrid process is higher than that of FEAs by using wet etching process to form the gate‐insulating opening. Thus, introduced hybrid‐etching process can optimize the gate‐insulating opening of FEAs.
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