Abstract
We introduced a simple fabrication process for field emission devices based on carbon nanotubes (CNTs) emitters. Instead of using the ITO material as a transparent electrode, a metal (Au) with thickness of 5–20 nm was used. Moreover, the ITO patterning process was eliminated by depositing metal layer, before the CNT printing process. In addition, the thin metal layer on a photoresist (PR) layer was used as UV block. We fabricated the CNT field emission arrays of triode structure with a simple process. And I– V characteristics of field emission arrays were measured. The maximum current density of 254 μA/cm 2 was achieved when the gate and the anode voltages were kept 150 and 3000 V, respectively. The distance between anode and cathode was kept constant.
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