Cesium Lead Iodide Research Articles

High Current Efficiency Red Perovskite Light-Emitting Diodes Meeting Rec. 2020 Standard.

Cesium lead iodide light-emitting diodes (LEDs) are attractive for displays due to their Rec. 2020 red standard compliance. However, achieving high current efficiencies (CEs), which is important for displays, is challenging because their emission spectrum is near the tail of the photopic luminosity function. Substituting some iodine with bromine can improve CEs by enlarging the bandgap, but defects easily form in iodine-bromine mixed perovskites. Here, we successfully reduced defect formation by adding organic ammonium salts and zwitterions. The organic ammonium salts do not form low-dimensional perovskites under the hydrogen bonding interaction of zwitterions. Instead, they passivate the cesium vacancy by forming new hydrogen bonds after perovskite crystallization. This approach leads to a red perovskite LED with a high CE of 12.8 cd A-1 and a peak external quantum efficiency of 20.3%, meeting the Rec. 2020 standard. It can be extended to large-area devices (2500 mm2) without a significant efficiency loss.

All-photonic artificial synapses based on photochromic perovskites for noncontact neuromorphic visual perception

Recently optoelectronic synapses generating light-driven electrical memories have played a vital role in the neuromorphic computing of visual perception. However, all the optoelectronic synapses demonstrate photoelectric conversion. Peripheral circuits are used for contact photocurrent measurement, leading to significant energy consumption and impeding the evolution of optical wireless communication. It is crucial to develop noncontact neuromorphic visual perception based on light-driven photonic memories. Herein, we report all-photonic artificial synapses based on photochromic perovskites. Triggered by ultraviolet and visible light pulses, cesium lead iodide bromine induces a structural disorder. Optical transmittance changes induced by the disorder last after the pulses are gone. Next, the photonic memories are propagated in the air and processed by a recurrent neural network. The accuracy of binary image recognition is instantly stabilized at 1.0, and accuracy above 0.8 after 7 epochs is achieved in the recognition of digitals from 0 to 9. The all-photonic synapses realize remote perception with zero in-situ energy consumption and enable artificial sensory systems with low-power computation, remote control, and ultrahigh propagation speed.

Impact of La doping on the optoelectronic and structural properties of CsPbIBr2 perovskite solar cell

Inorganic lead halide perovskite solar cells (IPSC) have high power conversion efficiency (PCE). Currently, heteroatom substitution is a promising method for enhancing the properties of perovskite materials and the performance of associated devices. This study outlines the production process of a perovskite solar cell made from inorganic CsPbIBr2 with a 4 % La doping. The cubic crystal structure with large grain size and small band gap energy is observed at 4 % La–CsPbIBr2. The optoelectronic and structural characteristics of CsPbIBr2 perovskite solar cells have been substantiated through various methodologies, such as the determination of space charge restricted current, examination of the photoluminescence decay profile, assessment of charge transfer resistance, and utilization of Mott Schottky analysis. The incorporation of lanthanum-doped cesium lead iodide bromide (La-doped CsPbIBr2) resulted in a notable enhancement in both the open circuit voltage (Voc), and the short circuit current density (Jsc), leading to a much higher overall efficiency of 9.89 % compared to the pristine counterpart, which exhibited an efficiency of 8.62 %.

Improved performance of inorganic CsPbI3 perovskite solar cells with WO3/C60 UTL bilayer as an ETL structure: a computational study

CsPbI3, also known as cesium lead iodide, has garnered significant attention as a potential absorber in perovskite solar cells (PSCs). CsPbI3-PSCs have not matched the high performance of hybrid PSCs. This study aimed to identify an effective combination of charge transport layers. Six-hole transporting layers (HTLs) including Spiro-OMeTAD, Cu2O, CuO, CuAlO2, CuSbS2, and SrCu2O2, as well as five electron transporting layers (ETLs) such as TiO2, WO3, ZnO, IGZO, and CdZnS, were tested separately in 30 PSCs. The findings of this research indicate that CuAlO2 as the HTL and WO3 as the ETL that are the most appropriate materials among the options examined, so we use FTO/WO3/CsPbI3/CuAlO2/Au as a required PSC. In this research, we used SCAPS (Solar Cell Capacitance Simulator)−1D device modeling to investigate the bilayer ETL of inorganic CsPbI3-PSC and discover the methods to improve their efficiency. In planar PSCs, optimizing electron–hole pair extraction and recombination at the ETL/perovskite interface is crucial for achieving high performance. The key concept is to enhance the WO3/perovskite interface properties by adding a 5 nm ultra-thin layer (UTL) of C60. The bilayer structure WO3/C60 was found to have the advantage of high electron extraction and low interfacial recombination, primarily due to more effective energy level alignment and defect passivation. To achieve the superior efficiency of PSC, various factors such as defect and doping densities in all layers, the energy level alteration of ETL and HTL, interface defect densities on both ETL and HTL sides, back metal contact, operating temperature, and parasitic resistances were optimized. After optimizing these parameters, the efficiency of the system containing WO3/C60 bilayer ETL was found to be 29.39%. The current work proposes a straightforward and promising method to create photovoltaic devices, especially for many types of perovskites, with desirable charge transport layers and recombination properties.

Device modelling and numerical analysis of high-efficiency double absorbers solar cells with diverse transport layer materials

Recently, a lot of focus has been placed on cesium lead iodide (CsPbI3) since it is considered a potentially useful inorganic halide perovskite with improved stability. Moreover, another potential absorber material is the mixed chalcogenide CZTSSe, which is abundant on Earth, cheap, environmentally acceptable, and has excellent photovoltaic performance. This research numerically simulated a novel double absorber solar cell structure employing CsPbI3 and CZTSSe absorbers in the active layer in SCAPS-1D. The current study analyses the effects of various electron and hole transport materials, back contact material's work functions, working temperatures, variations in defect concentration, and absorber thickness on the performance of photovoltaic devices. After researching a variety of distinct arrangements of double absorber solar cells, it was realized that the FTO/STO/CsPbI3/CZTSSe/NiO/W cell configuration exhibited the best overall performance with an open circuit voltage (Voc) at 1.0207 V, a short circuit current density (Jsc) at 41.815426 mA/cm2, Fill Factor (FF) at 87.50 %, and a Power Conversion Efficiency (PCE) at 37.35 %. The modeling of the device showed that a thickness of around 1.4 µm for the CZTSSe absorber is optimal. This simulation shows that when the working temperature in the cell and the defect concentration in the absorber increase, the efficiency of the device reduces uniformly, and the device is stable at 300 K temperature. In conclusion, if the material's work function is greater than 5.20 eV, then it is suitable for use as an anode.

Synchronous surface reconstruction and grain boundary healing toward efficient and stable inverted CsPbI3 perovskite solar cells

Cesium lead iodide (CsPbI3) perovskite has gained considerable attentions due to its unique photoelectric properties. However, numerous defects are inevitably existed on the surface and grain boundaries (GBs) of CsPbI3 resulting from the rapid crystallization and growth progress. Herein, different from the traditional ammonium salt treatment mechanism, we propose a facile strategy to synchronously achieve surface reconstruction and grain boundary healing by using 1,3-propylene diamine (PDA) post-treatment on CsPbI3 film. It is discovered that the PDA with suitable concentration can preferentially invade the defect sites of surface and GBs of CsPbI3 film, thereby break the soft perovskite structure in the shallow surface. With further low temperature annealing treatment, the broken CsPbI3 surface would undergo rapid secondary crystal growth to acquire smoother and blurred morphology with reduced GBs and pinholes, primarily derived from the strong interaction between the highly active amino groups of liquid PDA and Pb of perovskite. Meanwhile, the residual PDA molecules mainly anchor at the surface and GBs, and thus connect neighboring perovskite grains, coordinate uncoordinated sites to effectively passivate defects, and also resist the external invasions. Consequently, the inverted PDA-based CsPbI3 device yields a champion PCE of 20.02% with significantly improved long-term storage stability and operational stability.

Dimension and Thickness Control Synthesis of Strongly Confined Cesium Lead Iodide Perovskites with Excellent Two-Photon Absorption Properties

Dimension and Thickness Control Synthesis of Strongly Confined Cesium Lead Iodide Perovskites with Excellent Two-Photon Absorption Properties

Revealing the full potential of CsPbIBr2 perovskite solar cells: advancements towards enhanced performance.

Cesium lead iodide bromide (CsPbIBr2) perovskite solar cells (PSCs) have improved stability compared to other perovskite compositions. However, they still face significant challenges due to their poor photovoltaic performance parameters, which limit the devices' power conversion efficiencies (PCEs). This study proposes a novel device design to tailor the potential of CsPbIBr2 PSCs by improving their optoelectronic properties. An advanced 3D multiphysics approach was rigorously used to investigate the optics and electrical properties of the proposed CsPbIBr2 PSCs. This approach combines finite-difference time-domain (FDTD) and finite element method (FEM) techniques with the particle swarm optimization (PSO) algorithm. The outcome from the adapted numerical approach is in good agreement with the experimental results. The optimized CsPbIBr2 PSC demonstrates a promising power conversion efficiency (PCE) of over 16.4%, associated VOC of 1.53 V, FF of 80.6%, and JSC of 13.4 mA cm-2. Therefore, the potential of CsPbIBr2 perovskites could be further explored with continued research and development in material science and device physics.

Investigating the electronic, optical, elastic, and mechanical properties of cubic CsPbI3 under varying stress conditions: A computational analysis using density functional theory

This research investigates the electronic, optical, elastic, and mechanical characteristics of cubic Cesium Lead Iodide CsPbI3 perovskite by utilizing the Generalized Gradient Approximation method under varying stress conditions ranging from 0 to 13[Formula: see text]GPa. Using the Density Functional Theory, the research demonstrates that electronic parameters, such as the electronic band gap, the partial density of states, and the total density of states, are impacted by applied stress. The band gap becomes zero at 14[Formula: see text]GPa. Significant changes are also noted in optical parameters, such as absorption, conductivity, reflectivity, dielectric function, loss function, and refractive index. The study also identifies changes in elastic properties, including elastic constants as well as an exponential rise in mechanical properties, such as Young’s modulus, bulk modulus, and shear modulus. Furthermore, the study finds that Poisson’s ratio, Cauchy pressure, Pugh’s ratio, and Frantsevich’s ratio experience irregular changes. These discoveries provide valuable insights into the properties of CsPbI3, which could aid in the development of semiconducting devices, transparent coatings, and lenses.

Design and process of perovskite/silicon tandem solar cells

At present, the solar cells that occupy most market are still silicon solar cells. However, the power conversion efficiencies (PCEs) of the devices made of silicon have achieved an extreme value. Therefore, a new type of solar cells to get higher power conversion efficiencies are in great need. Since the 21st century, perovskite/silicon tandem solar cells have gained great attention because of their potential to offer higher PCE compared with other traditional solar cells. This article elaborates the inevitability of the development of perovskite/silicon crystal tandem solar cells from the perspectives of development history, cell structure. This article also discusses the different materials of both perovskite top cell layers and silicon crystal bottom cell layers in this new type of solar cell, including methylammonium lead iodide, formamidinium lead iodide, cesium lead iodide, crystalline silicon, thin-film silicon and heterojunction with intrinsic thin layer. This article mainly presents the characteristics and advantages and disadvantages of different materials when they are used in this new type device.

Phase Stability Improvement of a γ-CsPbI3 Perovskite Solar Cell Utilizing a Barium Bis(trifluoromethanesulfonimide) Solution.

The cesium lead iodide (CsPbI3) perovskite solar cell possesses a wide band gap ranging from 1.65 to 1.75 eV, which is suitable for integration into a tandem structure along with a low-band-gap silicon solar cell. Moreover, CsPbI3 has received considerable attention as a potential solution for the prevalent issues of low thermal stability of organic-inorganic perovskite solar cells and phase segregation encountered in conventional mixed halide wide-band-gap perovskite solar cells. Through the implementation of volatile additives, CsPbI3 has demonstrated substantial advancements in efficiency, process temperature, and stability. This study introduces a novel approach for barium (Ba)-doping by spraying an antisolvent containing barium bis(trifluoromethanesulfonimide) during the spin-coating process. By incorporating Ba2+ through this spraying technique, the formation of the delta phase in CsPbI3 is significantly suppressed; thereby, a power conversion efficiency of 18.56% is achieved, and a remarkable 93% of the initial efficiency is maintained after 600 h.

Cesium lead iodide-decorated two-dimensional titanium dioxide/reduced graphene oxide nanofiber composites as photoanodes for inorganic perovskite solar cells

In this study, we developed photoanode materials based on inorganic cesium lead iodide (CsPbI3)-decorated two-dimensional titanium dioxide-reduced graphene oxide nanofibers (TiO2/rGO NFs22TiO2/rGO NFs - titanium dioxide-reduced graphene oxide nanofibers.) for perovskite solar cells (PSCs). CsPbI3 was prepared by a two-step solution process and TiO2/rGO NFs were prepared using the electrospinning method. The influence of the as-fabricated TiO2 NFs, TiO2/rGO NFs, and CsPbI3 perovskite on their optical, surface, and morphological properties were characterized using X-ray diffraction (XRD), Fourier-transform infrared spectroscopy, ultraviolet–visible–near-infrared spectroscopy, field-emission scanning electron microscopy, high-resolution transmission electron microscopy, and atomic force microscopy analyses. XRD analysis of the TiO2 NFs, TiO2/rGO NFs, and CsPbI3 perovskite showed a crystalline nature with cubic and anatase crystal faces. The surface morphology of the TiO2 NFs, TiO2/rGO NFs, and CsPbI3 perovskite appeared as a beat-free fiber with a polycrystalline nature. The chemical oxidative states and electronic structures of the electrospun TiO2/rGO NFs were determined by X-ray photoelectron spectroscopy analysis. PSCs device were assembled with TiO2 NFs, TiO2/rGO NFs as photoanode, 2,2′,7,7′-Tetrakis(N,N-di-P-methoxyphenylamine)− 9,9′-spirobifluorene (Spiro–OMeTAD) as hole transport materials, sputtered gold chloride as back electrode (counter electrode). In addition, the CsPbI3 perovskite coated on the electrospun TiO2 and TiO2/rGO NF photoanodes exhibited electrical conductivities of 1.352 × 10−3 and 1.650 × 10−3 S cm−1. Finally, power conversion efficiency of TiO2/rGO NFs (6.38 %) was achieved, which was significantly higher than that of conventional TiO2 NFs (5.54 %)-based devices.

Photoexcitation Control of Excitation Relaxation in Mixed‐Phase Ruddlesden‐Popper Hybrid Organic‐Inorganic Lead‐Iodide Perovskites

AbstractThe electronic states and exciton binding energies of layered Ruddlesden‐Popper (RP) metal‐halide perovskites can be tailored through changes of their chemical composition, yielding multi‐phase systems with complex energy cascades. Ultrafast photoexcitation relaxation with transfer dynamics into domains of increasing layer number has been reported for these materials. Here, ultrafast optical spectroscopy is used to report an unexpected excitation energy dependence of photoexcitation relaxation dynamics in mixed‐dimensional benzylammonium cesium lead iodide RP perovskite (BeA2CsPb2I7) thin films, which gives rise to spectrally broadband luminescence over the visible region. Using transient absorption and photoluminescence spectroscopy it is found that excitations, which are formed in the n = 2 RP‐phase after photoexcitation with ≈0.2 electron volt excess energy, transfer to higher layer number RP‐phases on unexpectedly slow timescales of tens of picoseconds. Further, it is observed that such excitations are initially optically passive. Notably, luminescence occurs under these conditions from multiple RP‐phases with optical bandgaps across the visible range, yielding broadband luminescence. The results hold potential for realization of broadband white‐light emitters and other light‐emitting devices.

Using the Photoluminescence Color Change in Cesium Lead Iodide Nanoparticles to Monitor the Kinetics of an External Organohalide Chemical Reaction by Halide Exchange.

In this work, we demonstrate a photoluminescence-based method to monitor the kinetics of an organohalide reaction by way of detecting released bromide ions at cesium lead halide nanoparticles. Small aliquots of the reaction are added to an assay with known concentrations of CsPbI3, and the resulting Br-to-I halide exchange (HE) results in rapid and sensitive wavelength blueshifts (Δλ) due to CsPbBrxI3-x intermediate concentrations, the wavelengths of which are proportional to concentrations. An assay response factor, C, relates Δλ to Br- concentration as a function of CsPbI3 concentration. The observed kinetics, as well as calculated rate constants, equilibrium, and activation energy of the solvolysis reaction tested correspond closely to synthetic literature values, validating the assay. Factors that influence the sensitivity and performance of the assay, such as CsPbI3 size, morphology, and concentration, are discussed.

Design and Synthesis of Fluorinated Quantum Dots for Efficient and Stable 0D/3D Perovskite Solar Cells

AbstractDimensionality engineering involving the low‐dimensional and 3D perovskites has been demonstrated as an efficient promising strategy to modulate interfacial energy loss as well as instability in perovskite solar cells (PSCs). Herein, the use of fluorinated Cesium Lead Iodide (CsPbI3) perovskite quantum dot (PQD) is first reported as interface modification layer for PSCs. The binding between the CsPbI3 PQD surface and native oleic acid (OLA)/oleylamine (OAm) ligands is governed by a dynamic adsorption–desorption equilibrium. Perfluorooctanoic acid (PFA) with stronger binding affinity and more hydrophobic nature is explored to partially replace OLA to prepare the fluorinated ligand capped CsPbI3 PQDs (F‐CsPbI3). Through optimization of the addition of PFA during hot‐injection synthesis, the in situ treated F‐CsPbI3 PQDs display reduced surface defect states, higher photoluminescence quantum yields together with improved stability. Subsequently, both CsPbI3 and F‐CsPbI3 PQDs are utilized as interface engineering layer in PSCs, delivering the best efficiency values of 21.99% and 23.42%, respectively, which is significantly enhanced compared to the control device (20.37%). More importantly, benefiting from its more hydrophobic properties, the F‐CsPbI3 PQD treated device exhibits excellent ambient storage stability (25 °C, relative humidity: 35–45%), retaining over 80% of its initial efficiency after 1500 h aging.

Controllable Black-to-Yellow Phase Transition by Tuning the Lattice Symmetry in Perovskite Quantum Dots.

The black-to-yellow phase transition in perovskite quantum dots (QDs) is more complex than in bulk perovskites, regarding the role of surface energy. Here, with the assistance of in situ grazing-incidence wide-angle and small-angle X-ray scattering (GIWAXS/GISAXS), distinct phase behaviors of cesium lead iodide(CsPbI3 ) QDfilms under two different temperature profiles-instant heating-up (IHU) and slow heating-up (SHU) is investigated. The IHU process can cause the phase transition from black phase to yellow phase, while under the SHU process, the majority remains in black phase. Detailed studies and structural refinement analysis reveal that the phase transition is triggered by the removal of surface ligands, which switches the energy landscape. The lattice symmetry determines the transition rate and the coexistence black-to-yellow phase ratio. The SHU process allows longer relaxation time for a more ordered QD packing, which helps sustain the lattice symmetry and stabilizes the black phase. Therefore, one can use the lattice symmetry as a general index to monitor the CsPbI3 QD phase transition and finetune the coexistence black-to-yellow phase ratio for niche applications.

Quantification of strain and its impact on the phase stabilization of all-inorganic cesium lead iodide perovskites

•CsPbI3 nanoplates are epitaxially grown on muscovite mica single-crystal substrates •Lattice strain is present and found to increase with decreasing nanoplate thickness •The strained epitaxy enhances the metastable perovskite high-T phase stability The high-temperature perovskite γ-phase of CsPbI3 readily undergoes phase transition at ambient conditions to a low-temperature non-perovskite δ-phase with a poorer optoelectronic performance, thus hindering commercialization of these materials in photovoltaics. Here, we present the epitaxial growth of CsPbI3 nanoplates on muscovite mica single-crystal substrates and demonstrate that the high-temperature phase stability of these nanoplates is enhanced by a strained interface. Strain is measured as a function of nanoplate thickness on a single-particle level through spatially resolved structural and optical characterizations and is found to increase with decreasing thickness. From quantitatively tracking the CsPbI3 phase transition for thin (<400 nm) and thick (>400 nm) nanoplates, we observe a larger fraction of thin nanoplates still maintaining their high-temperature phase after 1 month compared with their thick counterparts. These findings establish a relationship between strain and phase transition kinetics, which is critical for rational design of stable perovskite-based optoelectronic devices. The high-temperature perovskite γ-phase of CsPbI3 readily undergoes phase transition at ambient conditions to a low-temperature non-perovskite δ-phase with a poorer optoelectronic performance, thus hindering commercialization of these materials in photovoltaics. Here, we present the epitaxial growth of CsPbI3 nanoplates on muscovite mica single-crystal substrates and demonstrate that the high-temperature phase stability of these nanoplates is enhanced by a strained interface. Strain is measured as a function of nanoplate thickness on a single-particle level through spatially resolved structural and optical characterizations and is found to increase with decreasing thickness. From quantitatively tracking the CsPbI3 phase transition for thin (<400 nm) and thick (>400 nm) nanoplates, we observe a larger fraction of thin nanoplates still maintaining their high-temperature phase after 1 month compared with their thick counterparts. These findings establish a relationship between strain and phase transition kinetics, which is critical for rational design of stable perovskite-based optoelectronic devices.

Higher stability and better photoluminescence quantum yield of cesium lead iodide perovskites nanoparticles in the presence of CTAB ligand.

Inorganic halide perovskites, such as CsPbI3, have unique optoelectronic properties which made them promising candidates for several applications.Unfortunately, these perovskites undergo rapid chemical decomposition and transformation into yellow δ-phase. Thus, the synthesis of stable cesium lead iodide perovskites remains an actual challenging field and it is imperative to develop a stabilized black phase for photovoltaic applications. For this purpose, a surfactant ligand was used to control the synthesis of inorganic perovskite CsPbI3 nanoparticles. Herein we demonstrate a new avenue for lead halide perovskites with the addition of either hexadecyltrimethylammonium bromide (CTAB) or silica nanoparticles to maintain in the first place; the stability of the α-CsPbI3 phase, and later on to boost their photoluminescence quantum yield (PLQY). The prepared perovskites were characterized using UV-visible absorption spectroscopy, fluorescence spectroscopy, scanning electron microscopy, thermogravimetric analysis and X-Ray diffraction technique. Results show higher stability of α-CsPbI3 phase and improvement in PLQY % to reach 99% enhancement in presence of CTAB. Moreover, the photoluminescence intensity of CsPbI3 nanoparticles was higher and was maintained for a longer duration in the presence of CTAB.

Strain-induced anisotropic ion migration in single-crystal cesium lead halide perovskites

Ion migration adversely affects perovskite solar cell (PSC) performance by upsetting film stability, inducing hysteresis, and light-induced halide segregation. Ion migration is also substantially influenced by residual strains, which are prevalent in fabricated PSCs. This study thus utilizes molecular dynamics simulations to analyze the influence of uniaxial, biaxial, and isotropic states of compressive and tensile stresses on ion migration in single-crystal cesium lead iodide (CsPbI3) and bromide (CsPbBr3) perovskites. Furthermore, nudged elastic band simulations are used to reveal energy barriers associated with ion migration under mechanical deformation. Tensile and compressive strains are observed to intensify and inhibit ion migration, respectively, in these metal halide perovskites (MHPs), with the extent of this alteration becoming more drastic on progressing from uniaxial to isotropic state of stress. We also reveal that uniaxial and biaxial states of stresses induce anisotropic ion migration in CsPbI3, while ion migration remains isotropic under these loading conditions in CsPbBr3. The heightened ion migration under tension in these MHPs is deciphered to arise from lowering of the energy barrier, while migration inhibition under compression arises from increase in barrier height. This study thus provides direct evidence of tensile and compressive strains influencing ion migration in MHPs and highlights that methods such as lattice-strain tailoring that are aimed at mitigating this phenomenon may need to be customized to the MHP of interest.

Piezo‐Phototronic Effect‐Induced Self‐Powered Broadband Photodetectors using Environmentally Stable α‐CsPbI3 Perovskite Nanocrystals

AbstractUtilizing the remarkably high light absorption and long carrier diffusion length of inorganic perovskites, superior performance self‐powered broadband photodetectors using the vertical heterojunction of cesium lead iodide (CsPbI3) nanocrystals (NCs) and zinc oxide (ZnO) films on a flexible platform are reported. Here, the pure cubic or α‐phase of as‐synthesized CsPbI3 NCs facilitate the novelty of the present work in terms of their enhanced structural stability suitable for optical applications. The α‐CsPbI3/ZnO device exhibits superior performance with photoresponsivity of ≈8.2 AW−1, ON/OFF ratio of ≈2.4 × 104, and specific detectivity up to ≈1.4 × 1012 Jones. Furthermore, the piezo‐phototronic effect of ZnO has been exploited to enhance the device performance by utilizing the compressive strain‐induced piezoelectric charges for modulating the generation, separation, and transportation of charge carriers. By introducing an approximate −0.042% compressive strain in the hybrid heterostructure, the enhancement of photocurrent, spectral responsivity, and specific detectivity of the detector by ≈619%, ≈536%, and ≈506%, respectively, under visible light illumination has been successfully achieved. This work not only presents an inventive method for improving the performance of perovskite photodetectors through interface engineering, but it also provides a thorough understanding of the piezo‐phototronic effect on optoelectronic devices.