Abstract
AbstractUtilizing the remarkably high light absorption and long carrier diffusion length of inorganic perovskites, superior performance self‐powered broadband photodetectors using the vertical heterojunction of cesium lead iodide (CsPbI3) nanocrystals (NCs) and zinc oxide (ZnO) films on a flexible platform are reported. Here, the pure cubic or α‐phase of as‐synthesized CsPbI3 NCs facilitate the novelty of the present work in terms of their enhanced structural stability suitable for optical applications. The α‐CsPbI3/ZnO device exhibits superior performance with photoresponsivity of ≈8.2 AW−1, ON/OFF ratio of ≈2.4 × 104, and specific detectivity up to ≈1.4 × 1012 Jones. Furthermore, the piezo‐phototronic effect of ZnO has been exploited to enhance the device performance by utilizing the compressive strain‐induced piezoelectric charges for modulating the generation, separation, and transportation of charge carriers. By introducing an approximate −0.042% compressive strain in the hybrid heterostructure, the enhancement of photocurrent, spectral responsivity, and specific detectivity of the detector by ≈619%, ≈536%, and ≈506%, respectively, under visible light illumination has been successfully achieved. This work not only presents an inventive method for improving the performance of perovskite photodetectors through interface engineering, but it also provides a thorough understanding of the piezo‐phototronic effect on optoelectronic devices.
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