CeO2 Buffer Research Articles

Texture and morphology developments of Yttria-stabilized zirconia (YSZ) buffer layer for coated conductors by RF sputtering

Yttria-stabilized zirconia (YSZ) films are deposited on CeO2/NiW tapes by RF sputtering for (Gd) BCO-coated conductors. Surface morphology and texture developments are investigated as the O2:Ar ratio and sputtering power increase. Both the grain size and the roughness of YSZ films increase as sputtering power increases. A simple model proposed by Bartelt et al. is used to explain the results. The strain relaxation mechanism plays a major role in the sudden increase in roughness for YSZ film deposited at a sputtering power of 50W. It is observed that low O2:Ar ratio favors the growth of (200) orientation for YSZ film, while high O2:Ar ratio favors the growth of (111) orientation. The preferential orientation (200) of the YSZ film with low O2:Ar ratio arises from template effect of CeO2 buffer layer. The (111) orientation of YSZ film with high O2:Ar ratio is due to thermodynamic mechanism aiming for the lowest surface energy. The grain size and roughness of our optimal YSZ film are 10–15nm and 0.7nm, respectively. The out-of-plane texture of our optimal YSZ film is 4.05°. The in-plane texture is 6.35°. The plan view and cross-section SEM images of YSZ films on CeO2/NiW tapes show a flat, dense and no micro-cracks morphology. Based on these results, (Gd) BCO films are deposited by RF sputtering, achieving self-field Jc of 4.0 MA/cm2 at 77K.

Characteristics of MOD Bi-2212 Thin Films on r-Cut Sapphire With $\hbox{CeO}_{2}$ Buffer Layer

We have studied Bi2Sr2CaCu2O8+δ (Bi-2212) thin films fabrication by a metal organic decomposition method. When the Bi-2212 thin films were prepared on c-cut sapphire substrates, the maximum critical temperature (TC) was 25 K by 820°C air annealing in an electric furnace for 30 min. When the Bi-2212 thin films were prepared on r-cut sapphire substrates with CeO2 buffer layer, the Bi-2212 thin films were grown epitaxially on the CeO2 buffer layer. The maximum TC obtained in the Bi-2212/CeO2/r-cut sapphire was 62.5 K by 840°C air annealing in an electric furnace for 30 min. To improve the surface morphology, face-to-face annealing process was introduced for the Bi-2212/CeO2/r-cut sapphire. By face-to-face annealing, TC was increased up to 65 K, and the critical current density of 1.03 × 105 A/cm2 was obtained at 5 K.

Influence of Annealing Atmosphere on Epitaxial Growth Process of the CeO2 Buffer Layer for Coated Conductors

The epitaxial growth of the buffer layer on a textured metal substrate has a significant influence on the performance of coated conductors, which provides the potential to support a high current for electric utility and high magnetic field applications at 77 K. In this paper, we have fabricated the CeO2 buffer layer on YSZ (yttria-stabilized zirconia) (00l) single crystal substrates by the chemical solution deposition (CSD) method in different annealing atmospheres. The results show that both the thermal decomposition behavior of the precursor solution and the annealing atmosphere have an important effect on the epitaxial growth process of the CeO2 buffer layer. The large oxygen partial pressure in annealing atmosphere is to the disadvantage of the epitaxial growth of CeO2 (00l) crystal face with high energy. Moreover, the epitaxial growth of the CeO2 (00l) crystal plane goes against a decrease in the surface roughness of the CeO2 film. Therefore, it can be considered that the orientation growth of the CeO2 buffer layer and its surface morphology evolution may be related to the thermal decomposition behavior of precursor solution and the change of oxygen vacancies concentration.

Epitaxial Cubic Ce2O3 Films via Ce-CeO2 Interfacial Reaction.

Thin films of reduced ceria supported on metals are often applied as substrates in model studies of the chemical reactivity of ceria based catalysts. Of special interest are the properties of oxygen vacancies in ceria. However, thin films of ceria prepared by established methods become increasingly disordered as the concentration of vacancies increases. Here, we propose an alternative method for preparing ordered reduced ceria films based on the physical vapor deposition and interfacial reaction of Ce with CeO2 films. The method yields bulk-truncated layers of cubic c-Ce2O3. Compared to CeO2 these layers contain 25% of perfectly ordered vacancies in the surface and subsurface allowing well-defined measurements of the properties of ceria in the limit of extreme reduction. Experimentally, c-Ce2O3(111) layers are easily identified by a characteristic 4 × 4 surface reconstruction with respect to CeO2(111). In addition, c-Ce2O3 layers represent an experimental realization of a normally unstable polymorph of Ce2O3. During interfacial reaction, c-Ce2O3 nucleates on the interface between CeO2 buffer and Ce overlayer and is further stabilized most likely by the tetragonal distortion of the ceria layers on Cu. The characteristic kinetics of the metal-oxide interfacial reactions may represent a vehicle for making other metastable oxide structures experimentally available.

Enhanced Jc of MOD-YBCO Films by Modifying Surface States of CeO2 Buffer Layers on Sapphire Substrates

Abstract Simple and easy treatments for the CeO2 buffer layers on sapphire single crystal substrates were demonstrated to enhance the superconducting properties of the metalorganic YBa2Cu3O7-y films using (i) acid solution dipping, (ii) UV light irradiation, and (iii) thermal annealing. When the CeO2 buffer layers were exposed to UV light, water contact angles diminished drastically, however, an apparent effect on the superconducting properties was not observed. On the other hand after the thermal annealing at 750°C under the mixture of dry-air and N2 gas, superconducting current density of 1.4 MA/cm 2 at 77.3K was achieved independent of treatment time.

Feasibility study of the synthesis of YBiO3 thin films by aqueous chemical solution deposition as an alternative for CeO2 buffer layers in coated conductors

In this paper, the formation of YBiO3 starting from a new water-based precursor was studied in both bulk and thin films under different processing conditions. The decomposition of this precursor was studied with thermogravimetric and differential thermal analysis and the reaction products were identified with X-ray diffraction. Our results show that starting from our water-based solutions, polycrystalline YBO powders can be obtained in air and argon atmospheres. Once the partial oxygen pressure was reduced using an Ar–5% H2 mixture, reduction of Bi3+ was observed, restricting YBO formation. When thin film synthesis on single crystal LaAlO3 is performed, clear differences in processing conditions were observed regarding powder synthesis. The addition of water vapour to the argon gas is necessary in order to suppress Bi2O3 sublimation. Using the appropriate synthesis conditions, well-textured, homogeneous, dense and smooth (Ra = 2.6–1.8 nm) films of 140 nm and 40 nm thickness are obtained at sinter-temperatures as low as 750 °C. YBa2Cu3O7−x deposited by Pulsed Laser Deposition on the 40 nm thick YBiO3 films yielded a Jc (77 K) of 3.6 MA cm−2 in self-field, indicating the potential of this material as an alternative for CeO2 in the CeO2/La2Zr2O7/Ni–5%W and CeO2/YSZ/Stainless Steel coated conductor architectures.

MOD growth of epitaxial cerium oxide buffer layer on LAO substrates for fabrication of c -axis oriented YBCO

Epitaxial cerium oxide (CeO2) buffer layer has been grown on lanthanum aluminate (LAO) single crystal substrates for fabrication of c-axis oriented YBa2Cu3O7−x (YBCO). Precursor solution of cerium acetylacetonates with viscosity of 0.6 centipoises was spin coated on the 1×1 cm area LAO substrates. The calcination was carried out by very slow ramp (1°C per minute) until the final temperature of 500°C in oxygen flow to remove most of the organic compounds. The final heat treatment has been done at 780°C by a ramp of 20° per minute in gas flow of mixed argon–oxygen with 5 Pa partial pressure of oxygen. The thickness of the deposited CeO2 buffer layer was 20 nm. Then, 100 nm thick YBCO film was deposited by sputtering on the CeO2 buffered LAO substrate. Another film with same deposition conditions was also fabricated on the bare LAO crystal for comparison. The scanning electron microscopy (SEM) and X-ray diffraction characterisations show a/b axis YBCO decreases significantly when using the CeO2 buffered LAO instead of the bare LAO. R–T and Jc measurements of the samples are also reported. Superconducting transition width of the fabricated film on the substrate with CeO2 buffer layer is less than 0.4 K and the Jc of the fabricated film is above 3.5 MA/cm2.

Preparation of Epitaxial YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7−y</sub> Films and CeO<sub>2</sub> Buffer Layer on Ni-5at.%W Substrates by MOD Method

Biaxially textured CeO2 films were deposited on Ni–5at.%W (Ni–5W) tapes by a metal-organic deposition (MOD) method. Subsequent YBa2Cu3O7-y (YBCO) films were prepared using the (MOD) method leading to a simplified coated conductor architecture of YBCO/CeO2/Ni–5W. X-ray diffraction measurements revealed an epitaxial growth of the CeO2 buffer layer the 7.06°, 5.16°, for the out-of-plane and in-plane alignment, respectively. The superconducting coated film with a texture spread down to the out-of-plane texture is ω = 6.2° and the in-plane texture is φ = 7.6°. The results indicate that single CeO2-buffered Ni–5W tapes are suitable for the epitaxial growth of YBCO higher cube texture and the epitaxial YBCO film was obtained. To microstructural investigations, the film’s SEM results showed a dense, smooth and crack-free surface morphology. The superconducting properties were measured by four probe method. The superconducting transition temperature (Tc) was about 90 K with a narrow transition of 0.8 K and the critical current density (Jc) was about 1.5×104 A/cm2 at 77 K, 4T.

Growth and characterization of doped CeO2 buffers on Ni-W substrates for coated conductors using metal organic deposition method

CeO2 and Ce0.8M0.2O2−d films (M = Mn, Y, Gd, Sm, Nd and La) with (00l) preferred orientation have been prepared on biaxially textured Ni-W substrates by metal organic decomposition (MOD) method. The factors influencing the formation of cracks on the surface of these CeO2 and doped CeO2 films on Ni-W substrates were explored by X-ray diffraction (XRD), scanning electron microscopy (SEM) analysis, atomic force microscopy (AFM) and differential scanning calorimetry (DSC). The results indicate that many factors, such as the change of the ionic radii of doping cations, the transformation of crystal structure and the formation of oxygen vacancies in lattices at high annealing temperature, may be related to the formation of cracks on the surface of these films. However, the crack formation shows no dependence on the crystal lattice mismatch degree of the films with Ni-W substrates. Moreover, the suppression of surface cracks is related to the change of intrinsic elasticity of CeO2 film with doping of cations with a larger radius. SEM and AFM investigations of Ce0.8M0.2O2−d (M = Y, Gd, Sm, Nd and La) films reveal the dense, smooth and crack-free microstructure, and their lattice parameters match well with that of YBCO, illuminating that they are potentially suitable to be as buffer layer, especially as cap layer in multi-layer architecture of buffer layer for coated conductors.

Influence of Morphology and Texture of CeO2 on YBa2Cu3O7 (YBCO) Growth and BaCeO3 Formation in Solution‐Derived Synthesis

AbstractWhen working with chemical solution deposition techniques, one of the main issues for optimal performance of CeO2 buffer layers in coated conductors is the insufficient chemical stability of the CeO2 layer during YBa2Cu3O7 (YBCO) thermal processing. This work focusses on the morphology and nanostructure in thin CeO2 films prepared by means of a novel aqueous synthesis route and incorporated into a Ni–W/La2Zr2O7/CeO2/YBa2Cu3O7‐coated conductor. Optimization of precursor chemistry and thermal processing led to a reduction in barium cerate formation. In a new precursor design, iminodiacetic acid was used as a stabilizing ligand, which resulted in an improved morphology of the buffer layer. A shelf life of more than 6 months was established by using a metal‐to‐ligand ratio of 1 to 5. During thermal processing, a combination of a slow calcination ramp with a high sintering ramp, short sintering dwell time and a low oxygen partial pressure during the synthesis resulted in a root mean square roughness below 3 nm for AFM analysis, a [111] to [002] ratio of 1 to 90 in X‐ray diffraction and well‐defined patterns in reflection high‐energy electron diffraction (RHEED) analysis of the CeO2 surface. Trifluoroacetate‐YBCO was deposited on top of the CeO2 buffer layer. Cross‐section analysis with a focussed ion beam allowed us to correlate the morphology and nanostructure of the CeO2 buffer layer with the formation of BaCeO3 and the appearance of voids and secondary phases throughout the YBa2Cu3O7 layer.

Superconducting YBa2Cu3O7−δ Thin Film Detectors for Picosecond THz Pulses

Ultra-fast THz detectors from superconducting YBa2Cu3O7−δ (YBCO) thin films were developed to monitor picosecond THz pulses. YBCO thin films were optimized by the introduction of CeO2 and PrBaCuO buffer layers. The transition temperature of 10 nm thick films reaches 79 K. A 15 nm thick YBCO microbridge (transition temperature—83 K, critical current density at 77 K—2.4 MA/cm2) embedded in a planar log-spiral antenna was used to detect pulsed THz radiation of the ANKA storage ring. First time resolved measurements of the multi-bunch filling pattern are presented.

Tuning of CeO2 buffer layers for coated superconductors through doping

The appearance of microcracks in cerium oxide (CeO2) buffer layers, as used in buffer layer architectures for coated superconductors, indicates the presence of stress between this buffer layer and the substrate. This stress can originate from the differences in thermal expansion or differences in lattice parameters between the CeO2 buffer layer and the substrate. In this article, we study, by means of ab initio density functional theory calculations, the influence of group IV doping elements on the lattice parameter and bulk modulus of CeO2. Vegard's law behavior is found for the lattice parameter in systems without oxygen vacancies, and the Shannon crystal radii for the doping elements are retrieved from the lattice expansions. We show that the lattice parameter of the doped CeO2 can be matched to that of the La2Zr2O7 coated NiW substrate substrate for dopant concentrations of about 5%, and that bulk modulus matching is either not possible or would require extreme doping concentrations.

Fabrication process of YBCO thin film starting from amorphous film for microstrip line device

Abstract We investigated the process for fabricating YBa2Cu3Oy (YBCO) thin film microstrip lines from amorphous thin films. First, we made amorphous YBCO thin films and then post-annealing was carried out. The amorphous 300-nm-thick YBCO thin films were deposited on a CeO2 buffered r-Al2O3 substrate by pulsed laser deposition. The 50-nm-thick CeO2 buffer layer was made by a facing target sputtering system. We examined the optimal conditions of the post-annealing process by using a two-step crystallization process. The heating rate of the first step was set to 360 K/min until 1023 K, and then the heating rate of the second step was set to 20 K/min until 1073 K. The oxygen pressure was kept to 3000 Pa at 1073 K for 210 min. From the XRD measurement, we observed that the YBCO thin films grew c-axis orientation on the CeO2/r-Al2O3 substrate. Both YBCO and CeO2 φ-scan peaks showed four-fold symmetry and rotated 45 degrees between YBCO (102) grain axis and CeO2 (220) grain axis. The surface roughness, Δφ, and Δφ of YBCO thin films were 35.12 nm, 0.89 degree, and 1.51 degree, respectively. We found these to be the optimal post-annealing conditions in which to make a single phase of YBCO films with Tc of 87 K from amorphous YBCO thin films. Therefore, our process is useful to make high-quality YBCO microstrip lines.

High Throughput of Reel-to-reel MOCVD-YBCO on Different CSD-and MOCVD-buffered Cube Textured Ni-substrates

Cheap chemical approaches: CSD/MOD and MOCVD were used and demonstrated to be feasible in 2G-wire production. New reel-to-reel MOCVD pilot system with higher throughput was examined, tuned and used in all YBCO depositions as well as for MgO, LMO, YSZ and CeO2 buffer layers fabrication. YBCO deposition process was found to be stable either at 10 m/h on 50 m long tapes or at 20 m/h on 100 m long tapes. All-layers-by-MOCVD approach allowed to get critical current up to I c max > 90A/cm-width. On a single CSD-LZO (lanthanum zirconate) buffered Ni-alloy tapes 400 nm thick YBCO films with critical current density up to j c max = 1.5 MA/cm2 were obtained. On the basis of single CSD-LZO-buffered tapes, some multiple buffer sandwiches were created and compared in the same YBCO deposition. The best result was reached on CVD-CeO2/1×CSD-LZO/Ni5W buffer oxide system and showed for 650 nm thick YBCO rather stable over 2.5 m length I c = 80-90 A.

バッファ層に CeO<sub>2</sub>/Y<sub>2</sub>O<sub>3</sub>/CeO<sub>2 </sub>を用いた Ni めっき Cu/SUS316 貼合せテープ上への YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7 </sub>超電導厚膜の作製

In this study, we attempted to install CeO 2 /Y2 O3 /CeO2 buffer layers, where the thicknesses of the CeO2 and Y 2O3 are10 and 250 nm respectively, instead of the CeO 2/YSZ (Y 2O3 stabilized ZrO 2)/CeO2 buffer layer architecture for YBCO (YBa 2 Cu3 O7 ) coated conductors using Ni-electroplated {100}<001> textured Cu and SUS316 laminated tape. Since the diffusion coefficient of oxygen in Y 2O3 is much smaller than that in YSZ and CeO 2, Y 2O3 seems to be a more favorable buffer layer material. We obtained a Jc of 1.0 MA/cm2 for the YBCO/Y 2 O3/Ni-electroplated Cu/SUS 316 laminated tape. However, the Δφvalue of the Y 2O3 layer deposited on the Ni layer increased by 1°compared with that of the Ni layer, and the Δφvalue of the YBCO layer on the Y 2O3 layer increased by 1.5°compared with that of the Y 2O3 layer. To avoid the degradation of the crystal orientations, we inserted very thin CeO2 layers of 10 nm between the Ni and the Y 2O3 layers, and between the Y 2O3 and the YBCO layers. The Jc of the 1 μm-thick YBCO layer prepared on the CeO 2 /Y2 O3 /CeO2 -buffered Ni-electroplated {100}<001> textured Cu/SUS316 laminated tape reached 2.1 MA/cm2 (Ic of 210 A-cm width) at 77 K in a self-field.

Improved sintering and electrical properties of La-doped CeO2 buffer layer for intermediate temperature solid oxide fuel cells using doped LaGaO3 film prepared by screen printing process

Effects of a sintering agent for La-doped ceria (LDC) as a buffer layer to prevent a chemical reaction between Ni in anode and Sr- and Mg-doped lanthanum gallate (LSGM) electrolyte during sintering were studied for improving sintering and electrical properties. Electrochemical performance of anode-supported solid oxide fuel cells (SOFCs) using LDC and LSGM films prepared by screen printing and co-sintering (1,350 °C) was also investigated. The prepared cell with dense LDC (ca. 17 μm) and LSGM electrolyte (ca. 60 μm) films showed an open circuit voltage close to the theoretical value of 1.10 V and a high maximum power density (0.831 W cm–2) at 700 °C. The addition of 1 wt.% LSGM to porous LDC buffer layer was effective for improving the sintering density and electrical conductivity, resulting in the high power density due to the decreased internal resistance loss.

Development of Solution Buffer Layers for RABiTS Based YBCO Coated Conductors

The main objective of this research is to find a suitable alternate solution based seed layer for the standard RABiTS three-layer architecture of physical vapor deposited CeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> cap/YSZ barrier/Y <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> seed on Ni-5%W metal tape. In the present work, we have identified CeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> buffer layer as a potential replacement for Y <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> seeds. Using a metal-organic deposition (MOD) process, we have grown smooth, crack-free, epitaxial thin films of CeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (pure and Zr, Cu and Gd-doped) directly on biaxially textured Ni-5W substrates in short lengths. Detailed XRD studies indicate that a single epitaxial CeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> phase with slightly improved out-of-plane texture compared to the texture of the underlying Ni-W substrates can be achieved in pure, undoped CeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> samples. We have also demonstrated the growth of YSZ barrier layers on pure CeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> seeds using sputtering. Both sputtered CeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> cap layers and MOD-YBCO films were grown epitaxially on these YSZ-buffered MOD-CeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Ni-5W substrates. High critical currents per unit width, I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> of 264 A/cm (critical current density, J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> of 3.3 MA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) at 77 K and 0.01 T was achieved for 0.8 μm thick MOD-YBCO films grown on MOD-CeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> seeds. These results indicate that CeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> films can be grown directly on Ni-5W substrates and still support high performance YBCO coated conductors. This work holds promise for a route for producing low-cost buffer architecture for RABiTS based YBCO coated conductors.

Fabrication of CeO2 buffer layer with high deposition rate on biaxially textured Ni–3%W substrate by electron beam evaporation

CeO2 has been used as a buffer layer of a coated conductor because of good chemical and structural compatibility with YBCO. But cracks were often observed at the surface for films thicker than 100nm deposited at a high temperature because of a large difference in a thermal expansion coefficient between metal and CeO2. The deposition rate was limited to be slow for getting good epitaxy. In order to increase the film deposition rate, while maintaining the epitaxy till a final thickness, two-step deposition process was tested. The thin seed layer with a thickness less than 10nm was deposited with a deposition rate of 3Å/s, and the homo-epitaxial layer at a thickness more than 240nm was deposited at a deposition rate of 30Å/s. The resulting CeO2 films deposited at 600°C showed a good texture with a Δφ of 5.3°, Δω of 4.2° and Ra of 2.2nm. The two-step process may be option for a low cost buffer layer for Ni–3%W metal substrates for the coated conductor.

Rapid Deposition of Buffer Layers for YBCO Coated Conductors on Biaxially-Textured Ni Tapes

Epitaxial growth of CeO2 buffer layers on biaxially textured (001)Ni tapes was studied using pulsed laser deposition. Relationships between microstructure and deposition parameters were systematically studied in order to develop reliable long tape coating processes. It was found that orientation and texture of CeO2 buffer layers were sensitive to deposition parameters. X-ray diffraction analyses showed that CeO2 buffer layers had pure (001) orientation at 860 °C. Under optimized deposition conditions, highly (001) oriented CeO2 buffer layers have been achieved at a high deposition rate of 1.5 nm/s in-plane texture and out-plane texture of CeO2 buffer layers were 4.25 degrees and 5.85 degrees, respectively.

Nanoscale Gd-Doped CeO2 Buffer Layer for a High Performance Solid Oxide Fuel Cell

Gd 2 O 3 -doped ceria (GCO) is irreplaceable as interface/buffer layer between a mixed conducting cathode such as La0.58Sr0.4Co0.2Fe0.8O3-δ (LSCF) and an 8 mol %Y2O3 stabilized ZrO2 (8YSZ) thin film electrolyte. To meet the demands of high performance, indispensable characteristics of this interface (LSCF/GCO/8YSZ) are (i) no reaction of GCO with LSCF or YSZ and (ii) a GCO layer that is defect-free (closed porosity, no cracks). It is well known that state-of-the-art screen printed and sintered GCO buffer layers are imperfect and ultimately reduce the overall performance. This study concentrates on the evaluation of nanoscaled GCO thin films integrated into anode supported cells (ASC). GCO thin films were deposited on 8YSZ electrolyte by a low temperature metal organic deposition (MOD) process. MOD is preferable because it is a versatile technique for large scale and low cost fabrication for various material compositions. The authors investigated the influence of preparation parameters with respect to chemical homogeneity and film quality (pores, cracks) of GCO thin films with a constant film thickness between 50 nm and 100 nm. Electrochemical performance of anode supported cells employing MOD derived GCO thin films will be presented in terms of ohmic resistance (ASRΩ) and will be evaluated in contrast to screen printed and sintered GCO thick films. Nanoscale MOD derived thin films with low processing temperatures and dense film qualities were vastly superior to state-of-the-art GCO and beneficial to the overall cell performance.