The minority carrier lifetimes in InGaAs ternary alloys are investigated both experimentally and theoretically. Two groups of InGaAs/InP photodetector samples are designed for experiments, one with In0.75Ga0.25As and the other with In0.53Ga0.47As as the absorption layers. The lifetimes are obtained to be about 100–200 ns in In0.75Ga0.25As and 600 ns-1 µs in In0.53Ga0.47As by microwave photoconductivity decay technique. The calculated lifetimes are also found to be consistent with the experimental ones. Besides, for both InGaAs materials, the Shockley-Read-Hall (SRH), radiative and Auger recombination mechanisms are identified in calculations to be the dominant mechanisms at low, intermediate and high doping densities at room temperature, respectively. Furthermore, the effects of density, capture cross-sections and energy levels (Ets) of recombination centers, and bandgaps (Egs) on the SRH lifetimes are determined and compared for the two InGaAs materials. For an n-type material, when Et is near the mid-bandgap (Eg/2), the SRH lifetime is only inversely proportional to the product of the density and the capture cross-section of the recombination centers. When Et is not near the mid-bandgap, the magnitude of Eg also plays an important role in the SRH lifetime. By increasing the In-content from 53 % in In0.53Ga0.47As to 75 % in In0.75Ga0.25As, where the bandgap narrows from 0.75 to 0.52 eV, the SRH lifetime in In0.75Ga0.25As is shortened by a factor of about 1–42 for Et < Eg/2 and 1–65 for Et > Eg/2 within the bandgap, respectively.