CdTe Thin Film Solar Cells Research Articles

Picosecond pulsed laser scribing of Cd2SnO4-based CdTe thin-film solar cells on flexible glass

CdTe photovoltaic modules are the most commercially successful thin-film solar cells. In particular, flexible CdTe modules are a promising development in photovoltaic architecture. Cd2SnO4 (CTO) is a low-cost transparent conductive material with excellent optical and electrical properties. Although laser scribing is commonly used to produce cell interconnects in the manufacturing of thin-film PV modules, the laser scribing process window for CTO-based CdTe cells is narrow, and more research is needed on direct laser scribing of flexible CdTe solar cells. In this study, the picosecond pulsed laser scribing of CdTe solar cells with CTO front electrodes and flexible glass substrates was investigated using lasers with the wavelengths of 355 and 532 nm. The flexible cells were suctioned onto a working platform, and a direct ablation method was adopted. The damage and removal thresholds of the CTO, CdTe, and Ni layers were studied and the effects of the spot spacing, multilayer conditions, and laser polarization state were investigated. A method for determining the scribing parameters was proposed. Very smooth scribing grooves were obtained using the optimized laser scribing process. The series and shunt resistances of the cells after laser scribing showed no significant differences compared to those of the control cells.

Combinatorial Separation of Cd and Te from CdTe via Chemical Vapour Transport with Sulfur and Air/Methane Treatment for the Recovery of Critical Resources from Thin Film Solar Cells.

Elemental Te and Cd are successfully recovered from CdTe via a combinatorial process involving chemical vapor transport (CVT) using sulfur as transport agent giving elemental Te being deposited. Separation is successfully enabled by the first process for CVT of Te starting with CdTe. Cd is subsequently recovered by an oxidation of the formed CdS to CdO followed by reduction to Cd metal with natural gas, in which Cd can also be separated via the gas phase. Hereby, the process addresses the main critical elements of the active material in thin film CdTe solar cells regarding both, scarcity and toxicity. Both, closed and open systems were investigated displaying more or less thermodynamic control of the system. Transport rates were determined for the closed system as well as for an open system working with sulfur vapour at moderate temperatures below and close to the boiling point of sulfur. Excellent purity of tellurium was achieved already by the initial transport, leading to low Cd2+ concentrations in the obtained Te being below the quantification limit of microwave plasma-atomic emission spectroscopy (MP-AES) (≪0.05 wt %).

The significance of bilayer window (CdS:O/CdS) on the performance of CdTe thin film solar cells

Ultrathin and compact CdS:O/CdS bilayer window in CdTe solar cells has higher potential for enhanced p-type doping, reduced Te diffusion, and improved power conversion efficiency (PCE) compared to traditional single-layer CdS or CdS:O windows. In this effort, we used a two-gun RF sputtering equipment to deposit compact CdS:O (∼50 nm)/CdS(∼50 nm) bilayers onto the borosilicate and ITO-coated glass substrates at low temperature (≤250 °C). Intriguingly CdS:O/CdS bilayers retain its hexagonal {0002} preferential orientation but with around 10.58 % optical bandgap (Eg) increment compared to CdS (Eg ≈ 2.32 eV) of equal thickness (∼100 nm). Close-spaced sublimation (CSS) technique was used to deposit the CdTe thin film onto the CdS and CdS:O/CdS layers at 650 °C. The effect of CdS and CdS:O/CdS layers on the microstructural and morphological features of CdCl2-treated CdTe films were critically analyzed in revealing a promising {0001}/{111}-like partial-epitaxy presumably due to the preferential cubic CdTe growth along the <111> orientation. The CdTe films grown over a CdS:O/CdS layer exhibited smaller average crystallite and grain sizes than those grown over a single CdS layer. An essential finding was the formation of an optimal intermix layer of CdSxTe1-x, particularly evident in the CdTe films grown on the CdS:O/CdS bilayer. To comprehensively explore the effect of CdS:O/CdS window layers on PCE, complete CdTe solar cells were fabricated using three different window layers: CdS, CdS:O, and CdS:O/CdS, which are all considered as rudimentary as no layer optimization was performed. Notably, CdTe solar cell that incorporates the CdS:O/CdS bilayer window exhibited the most promising performance among all the tested rudimentary cells and corroborated the numerically simulated findings conducted by the SCAPS-1D simulator.

Impact of nanoscale Cu (I) precursors prepared by solution process on large-area CdTe solar cells

In recent years, the study of Cu (Ӏ) precursors in high-performance CdTe thin-film solar cell devices has received increasing attention. However, few studies have been reported on nanoscale Cu (I) precursors in large-area CdTe devices (≥1 cm2). Here, three different Cu (Ӏ) nano precursors have been rapidly prepared by solution method (CuCl ethanol solution, CuI acetonitrile solution, and CuSCN aqueous ammonia solution) and their effects on the performance of commercial large-area CdTe thin-film solar cells have been investigated. The results show that the distribution amount and uniformity of the nano precursor particles on the CdTe back surface have a large impact on the device performance. The CuCl nanoparticles are more uniformly distributed and the device performance is more excellent. CuI nanoparticles easily formed clusters at grain boundaries. Denser distribution of CuSCN nanoparticles. The thermal diffusion conditions (temperature, time and precursor concentration) have a significant effect on the device performance, but the most reasonable thermal diffusion conditions tend to be the same for all devices. This suggests that the thermal diffusion conditions are determined by the nature of the CdTe absorber layer itself and are not interfered by different nano precursors.

Preparation of CuSe nanoparticles by antisolvent process for doping and passivation of absorber layer in CdTe solar cells

The p-type doping and passivation of the back surface of the CdTe absorber layer are two key steps to enhance the performance of CdTe thin film solar cells. In recent years, different Cu-doped precursors (Cu (I) and Cu (II) materials) and passivation materials (elements such as Se, Cl, Al, etc.) have been investigated. However, few researchers have proposed in new materials on both doping and passivation functions for backside applications. Here, CuSe, which combines the potential of p-type doping and Se passivation functions, is proposed for the first time as a doping precursor for the CdTe absorber layer. A certain amount of CuSe nanoparticles was deposited on the back surface of the CdTe absorber layer based on an antisolvent deposition process. The results show that the optimal device open-circuit voltage of the CuSe-treated CdTe solar cell reaches 842.5 mV, which is ∼ 6.5 % higher than that of the CuCl2-treated CdTe device (791.4 mV). The results of current-voltage and Mott-Schottky, impedance spectrum show that the CuSe-treated CdTe device not only achieves the purpose of p-type doping, but also introduces the passivation function of Se.

Towards the fabrication of flexible thin film CdTe solar cells: The significance of substrate surfaces

Thin film CdTe solar cells have been recognized as reliable alternative for the manufacture of cheap photovoltaic solar cells of the future, due to its excellent absorber characteristics and simple, low-cost manufacturability. However, for the attainment of higher cell performances, additional studies are needed to increase cell efficiency through further development of better quality films and new fabrication processes. In the substrate-structured CdTe thin film solar cells, the CdTe absorber layer is deposited directly onto the substrate or through a back contact layer. But the quality of deposited film is believed to depend on the type and smoothness of the substrate. In this work CdTe was deposited on different substrates by RF sputtering and the effects on the deposited films were studied in terms of their structural and morphological forms. The substrates used were: pure molybdenum sheets (Mo), molybdenum-sputtered on molybdenum (Mo/Mo), molybdenum-sputtered polyimide (PI/Mo) and molybdenum-sputtered glass (glass/Mo). The characterization tools used included XRD, SEM and AFM. The results showed that all surfaces produced uniform, compact and pinhole-free films; however, those on smoother surfaces produced larger as-deposited grain sizes of up to1.7μm as against 1.3 for rougher surfaces. Non-uniformities such as overgrowth and voids were observed, but only films on PI showed evidence of cracking and peel-offs.

Buried junction and efficient carrier separation in CdSexTe1−x/CdTe solar cells

Alloying CdTe absorbers with Se is a critical advancement for the fabrication of highly efficient CdTe thin-film solar cells. Herein, the role of the Se concentration gradient in CdSexTe1−x/CdTe solar cells is stressed in addition to the decreased bandgap and passivation effect of Se. The buried graded CdSexTe1−x at the front interface of the device was stripped and analyzed by quasi in situ x-ray photoelectron spectroscopy depth profiling. A serial shift of Fermi level toward the valence band was probed as the Se concentration decreased in the graded CdSexTe1−x absorber, revealing the presence of n-type CdSexTe1−x region near the front contact. Kelvin probe force microscopy characterizations and voltage-dependent photocurrent collection analysis further confirmed the existence of a buried junction in the graded CdSexTe1−x absorber. The CdS-free CdTe solar cell with a graded CdSexTe1−x/CdTe absorber fabricated in this study showed an efficiency of 17.6%. These results indicated that the non-uniform distribution of Se introduced a built-in field in the graded CdSexTe1−x absorber and enabled efficient separation of photogenerated carriers, yielding high-performance CdTe solar cells in the absence of a conventional n-type CdS window layer. This study deepened the understanding of the performance enhancement in Se-containing CdTe solar cells and provided new ideas for further performance optimization.

Absorber texture and the efficiency of polycrystalline thin film CdTe solar cells

A range of microstructural changes occur during the deposition and activation of CdTe based thin film solar cells. In particular, the cadmium chloride (CdCl2) activation treatment results in wholesale recrystallisation which transforms the conversion efficiency of the solar cell. One of the noticeable effects is the change of preferred orientation of the CdTe absorber. Highly orientated [111] texture is observed in as deposited or under-treated CdTe based devices. Optimized activation results in a more randomized texture and the [111] preferred texture component is significantly weakened. In this paper we use Electron Backscatter Diffraction to characterise absorber cross-sections. The focus is on how randomization of the absorber texture reflects device performance. We have had access to a range of CdTe devices using a variety of deposition techniques. We have observed a clear pattern that shows that devices with a highly orientated [111] texture have poor efficiency. Devices with a randomized texture have much higher efficiency. Here we illustrate this empirical correlation using devices deposited by Metal Organic Chemical Vapour Deposition with a range of efficiencies from 13.1 % to 17 %. We have also included the analysis of an absorber from a 18.7 % high efficiency CdSeTe/CdTe device to show that texture is similarly important in these advanced devices. We have been able to quantify the effect of texture by using multiples of uniform density or (MUD) values from the inverse pole figures. MUD figures close to 1 correlate with highest efficiency. Although the random texture of the absorber microstructure is only one of several important process factors, it appears to be a necessary feature for highest efficiency CdTe-based polycrystalline solar cells.

Copper doping effect in the back surface field layer of CdTe thin film solar cells

In this work, the Solar Cell Capacitance Simulator (SCAPS-1D) is employed to evaluate the characteristics of CdTe thin films with ZnTe as the Back Surface Field (BSF) layer and estimate the effective copper doping ratio at both the atomic scale and the device operational response perspective. The electrical characteristics of ZnTe, at varying levels of copper doping, were derived using density functional theory (DFT) by applying the generalized gradient approximation (GGA) and Hubbard U corrections (DFT+U). The performance of ZnTe with different Cu concentrations as a BSF layer was evaluated by analysing the values of four key parameters that are open circuit voltage (VOC), short circuit current density (JSC), fill factor (FF), and conversion efficiency (η). The results indicate that an increase in Cu concentration from 0% to 3%, 6%, 10%, and 12% resulted in a reduction of the energy band gap. Specifically, the energy band gap decreased from 2.24 eV to 2.10 eV, 1.98 eV, 1.92 eV, and 1.88 eV, respectively. Optimal Cu doping promotes the favourable shift in the valence band maxima (VBM) and formation of p + -ZnTe, lowering thermionic emission and improving carrier lifetime, which results in an improved ohmic contact, η = 18.73% for 10% of Cu content. Excessive doping in contrast degraded the overall device performance by forming an unmatched carrier band offset at the front interface with CdS, increasing the acceptor type defect and CdTe compensation rate. Overall, the findings suggest that incorporating a controlled level of Cu, which in this case is around 10%, promotes the efficiency and stability of the proposed CdTe device configuration to a certain extent.

Simulation and performance analysis of CdTe thin film solar cell using different Cd-free zinc chalcogenide-based buffer layers

In this study, the performance of a Cadmium Telluride (CdTe) thin-film solar cell was evaluated with various buffer layers (CdS, ZnSe, ZnO, ZnS) using the Silvaco-Atlas semiconductor device simulator. The impact of these buffer layers on the functionality of the CdTe solar cell was scrutinized at a temperature of 300 K under standard AM1.5G illumination. Initially, the modeling and simulation results of CdS/CdTe solar cell were examined, in comparison with the experimental and simulation results previously reported, to validate our reference structure and to explore its performance. The baseline CdS/CdTe solar cell, serving as a benchmark, yielded a conversion efficiency of 22.14 %. Then we attempted to identify an environmentally friendly alternative buffer layer for the CdTe thin film solar cell by substituting CdS with various Cd-free zinc chalcogenide-based materials (Zn(O,S,Se)) to boost efficiency. By trimming the layer thickness to approximately 0.01 μm, conversion efficiencies of 23.04 %, 23.13 % and 24.48 % were attained for the ZnO, ZnSe, and ZnS buffer layers, respectively. In order to investigate the performance of each proposed structure, thickness and doping density of the absorber and buffer layer were varied. Best efficiency around 25.23 % and 25.04 % are achieved for the optimized solar cells for ZnS and ZnSe buffer layer, respectively. As a result, ZnS and ZnSe are promising materials can be used as an alternative to the commonly used CdS buffer layer in CdTe solar cell. The influence of the operating temperature on solar cell performance was also investigated.

Effect of Antireflection Coating on the Efficiency of an ITO/SnO2/CdS/CdTe Thin Film Solar Cell

Effect of Antireflection Coating on the Efficiency of an ITO/SnO2/CdS/CdTe Thin Film Solar Cell

Precise Preparation of CdS Thin Films for Efficient Sb2S3–ySey Thin-Film Solar Cells

In this work, CdS thin films were prepared by chemical bath deposition (CBD) and Sb2S3–ySey thin films were prepared by a hydrothermal method. Solar cells with the architecture of FTO/CdS/Sb2S3–ySey/spiro-OMeTAD/Au were fabricated to evaluate the quality of CdS thin films as the electron transport layer. The precise preparation strategy with the combination of adjusting the thickness of CdS thin films prepared by CBD and changing the concentration of the CdCl2 methanol solution in the post-treatment process was first proposed. When the CdS thin-film thicknesses were 100, 80, 65, and 40 nm and the CdCl2 methanol solution concentration was 20 mg·mL–1, the power conversion efficiencies (PCEs) of the corresponding solar cells were 7.32% of 100 nm, 7.62% of 80 nm, 8.00% of 65 nm, and 7.55% of 40 nm. When the CdS thin-film thickness was 40 nm and the CdCl2 methanol solution concentrations decreased to 15, 13.3, 10, and 5 mg·mL–1, the PCEs were 7.98% of 15 mg·mL–1, 8.46% of 13.3 mg·mL–1, 7.71% of 10 mg·mL–1, and 7.31% of 5 mg·mL–1. Therefore, the 40 nm thick compact and full-coverage CdS thin film without the appearance of residual CdCl2 can be successfully obtained using the precise preparation strategy and achieved an optimal PCE of 8.46%. The precise preparation strategy is also valuable to develop the ultrathin, compact, and full-coverage CdS thin film as the electron transport layer for CdTe thin-film solar cells.

Effect of Cu2Te Back Surface Interfacial Layer on Cadmium Telluride Thin Film Solar Cell Performance from Numerical Analysis

Even though substantial advances made in the device configuration of the frontal layers of the superstrate cadmium telluride (CdTe) solar cell device have contributed to conversion efficiency, unresolved challenges remain in regard to controlling the self-compensation and minority carrier recombination at the back contact that limits the efficiency. In this study, a SCAPS-1D simulator was used to analyze the loss mechanism and performance limitations due to the band-bending effect upon copper chloride treatment and subsequent Cu2Te layer formation as the back contact buffer layer. The optimal energy bandgap range for the proposed back surface layer of Cu2Te is derived to be in the range of 1.1 eV to 1.3 eV for the maximum conversion efficiency, i.e., around 21.3%. Moreover, the impacts of absorber layer’s carrier concentration with respect to CdTe film thickness, bandgap, and operational temperature are analyzed. The optimized design reveals that the acceptor concentration contributes significantly to the performance of the CdTe devices, including spectral response. Consequently, the optimized thickness of the CdTe absorber layer with a Cu-based back contact is found to be 2.5 µm. Moreover, the effect of temperature ranging from 30 °C to 100 °C as the operating condition of the CdTe thin-film solar cells is addressed, which demonstrates an increasing recombination tread once the device temperature exceeds 60 °C, thus affecting the stability of the solar cells.

Solar cells based on CdTe thin films (Part II)

This paper discusses the use of semiconductor solar cells based on thin-film cadmium telluride (CdTe) in modern energy production. The advantages and disadvantages of using CdTe thin-film solar cells are analyzed, and arguments are presented in favor of the implementation of mass production technologies for CdTe solar modules, which can compete with silicon analogs in terms of compromise between efficiency and cost. The physical and chemical properties of the binary Cd-Te system are described, and the relationship between the physical, chemical, electrical, and optical properties of CdTe is analyzed, making it attractive for use in thin-film solar cells. Special attention is given to the investigation of photovoltaic properties, which are important parameters for determining photoconductivity, and the advantages and disadvantages of CdTe film photovoltaic properties are discussed. CdTe thin-film heterostructures (HSs), which are important components of modern solar cells, are considered, and their main advantages and disadvantages are described. It is argued that simple methods of manufacturing and forming HSs, which do not require complex and expensive equipment, are an important advantage of CdTe-based solar cell technology.

A comprehensive photovoltaic study on tungsten disulfide (WS2) buffer layer based CdTe solar cell

Transition metal di-chalcogenides (TMCDs)-Tungsten disulfide (WS2) exhibit excellent optoelectronic properties such as suitable bandgap, high absorption coefficient, good conductivity, high carrier mobility, etc. to be used as a photovoltaic material for thin-film solar cells. In the present work, we have replaced the traditional buffer CdS and ITO/ZnO window layer in CdTe solar cells with the non-toxic, earth-abundant WS2 buffer and SnO2 window layer, respectively. The SCAPS-1D solar simulator is used to investigate the potentiality of WS2 as buffer material in CdTe solar cells. This numerical study provides a comparison of the performances between the proposed structure: SnO2/WS2/CdTe/Au and the baseline structure: ITO/ZnO/CdS/CdTe/Au. The impacts of the charge carrier generation rate, spectral response, current-voltage characteristics, bulk defect density, defect density at buffer/absorber interface, operating temperature, and capacitance-voltage characteristics on the solar cell performance parameters have also been analyzed. The tolerance level of defect density in WS2 bulk and WS2/CdTe interface are found to be 1017 cm−3 and 1012 cm−3, respectively. The temperature study reveals the poor structural robustness and thermal stability of the proposed cell. The conversion efficiency of the proposed cell has found to be 20.55% at the optimized device structure. Nevertheles, these findings may provide an insight to fabricate viable, environment friendly, and inexpensive CdTe thin-film solar cells.

A search for new back contacts for CdTe solar cells

There is widespread interest in reaching the practical efficiency of cadmium telluride (CdTe) thin-film solar cells, which suffer from open-circuit voltage loss due to high surface recombination velocity and Schottky barrier at the back contact. Here, we focus on back contacts in the superstrate configuration with the goal of finding new materials that can provide improved passivation, electron reflection, and hole transport properties compared to the commonly used material, ZnTe. We performed a computational search among 229 binary and ternary tetrahedrally bonded structures using first-principles methods and transport models to evaluate critical material design criteria, including phase stability, electronic structure, hole transport, band alignments, and p-type dopability. Through this search, we have identified several candidate materials and their alloys (AlAs, AgAlTe2, ZnGeP2, ZnSiAs2, and CuAlTe2) that exhibit promising properties for back contacts. We hope that these new material recommendations and associated guidelines will inspire new directions in hole transport layer design for CdTe solar cells.

Influence of hole interface layer on the performance of cadmium telluride-based thin film solar cell

The numerical modeling of cadmium telluride (CdTe) thin-film solar cell employing p + Cu2O as the hole Interface Layer is presented in this study. SCAPS software was used to analyze the performance of ZnO/CdS/CdTe/Cu2O with different absorber layer thicknesses. Cuprous oxide (Cu2O) is used as a hole transport layer in the suggested structure. Efficiency (η) without Cu2O is 19.10 percent (with VOC = 0.81 V, JSC = 27.12 mA/cm2, FF = 86.01 percent) and efficiency (η) with Cu2O is 25.39 percent (with VOC = 1.11 V, JSC = 27.91 mA/cm2, FF = 83.53 percent) for ZnO/CdS/CdTe/Cu2O structure. The Cu2O layer minimizes recombination losses at the back contact, increasing the cell's efficiency. As a result, utilizing SCAPS to simulate the proposed cell is beneficial to understand photovoltaic devices.

Effect of different annealing conditions on CdZnTe thin films for absorber layer applications

The Silicon based single junction and perovskite solar cells have demonstrated high efficiency but Silicon based cells suffer from the drawback of higher cost and perovskite solar cells are not stable and degradable in environment. The thin film based CIGS and CdTe cells have achieved efficiency of more than 22% but, particularly, the CdTe thin film solar cells require a suitable back contact which can be obtained by doping of Zn element in CdTe. The grain growth in CdTe-based films is attained by chloride treatment and therefore, in order to seek applicability of chloride treatment on CdZnTe (CZT) thin films, the present communication reports an evolution of different annealing conditions (in air, CdCl2 and MgCl2 environments) on physical properties to electron beam evaporated CdZnTe thin films. The XRD diffractograms revealed to the dominance of cubic phased peak corresponding to (111) plane and augmentation in grain size with treatment temperature. The optical spectra indicated variation in absorbance and transmittance with temperature of treatments and Tauc's plots demonstrated band gap of all the films in 1.41–1.55 eV range. Current-voltage characteristics divulged Ohmic character of films where conductivity and resistivity are eventually modified with annealing conditions. The FESEM micrographs of pristine films represented bouncy grains with some vacant spaces whereas chloride treated films showed larger grains. The EDS patterns confirmed the deposition of CdZnTe thin films and treatments concerned. The AFM maps demonstrated deep valley-like and hill-like configurations of processed films. The obtained results signify that the films annealed at 300 °C aver their suitability for absorber layer roles in development of efficient solar cells with single junction and tandem architectures.

Recombination-induced voltage-dependent photocurrent collection loss in CdTe thin film solar cell

Recently, the efficiency of CdTe thin film solar cell has been improved by using new type of window layer Mg x Zn1−x O (MZO). However, it is hard to achieve such a high efficiency as expected. In this report a comparative study is carried out between the MZO/CdTe and CdS/CdTe solar cells to investigate the factors affecting the device performance of MZO/CdTe solar cells. The efficiency loss quantified by voltage-dependent photocurrent collection efficiency (η C(V′)) is 3.89% for MZO/CdTe and 1.53% for CdS/CdTe solar cells. The higher efficiency loss for the MZO/CdTe solar cell is induced by more severe carrier recombination at the MZO/CdTe p–n junction interface and in CdTe bulk region than that for the CdS/CdTe solar cell. Activation energy (E a) of the reverse saturation current of the MZO/CdTe and CdS/CdTe solar cells are found to be 1.08 eV and 1.36 eV, respectively. These values indicate that for the CdS/CdTe solar cell the carrier recombination is dominated by bulk Shockley–Read–Hall (SRH) recombination and for the MZO/CdTe solar cell the carrier recombination is dominated by the p–n junction interface recombination. It is found that the tunneling-enhanced interface recombination is also involved in carrier recombination in the MZO/CdTe solar cell. This work demonstrates the poor device performance of the MZO/CdTe solar cell is induced by more severe interface and bulk recombination than that of the CdS/CdTe solar cell.

Performance enhancement of solar cells based on high photoelectric conversion efficiency of h-BN and metal nanoparticles.

In this article, we propose a new type of CdTe thin-film solar cell based on a CdTe/CdS heterojunction. We used the finite difference time domain method to simulate the propagation of electromagnetic waves in the time domain under certain boundary conditions and the change in the absorption rate of cells when optimising the structure. The simulation shows that the light absorption rate of the cell is significantly enhanced after adding h-BN and metal particles to the proposed structure. Under the irradiation of standard light AM1.5 with the wavelength range of 300 nm to 1000 nm, presenting a 90% absorption bandwidth over 700 nm, and the average absorption rate is as high as 92.9%. The short-circuit current and open-circuit voltage are 30.98 mA/cm2 and 1.155 V, respectively, and the photoelectric conversion efficiency (PCE) increases to 30.76%, which is an increase of 27.58% compared to the original PCE. The result shows that, after metal nanoparticles are embedded in the absorption layer of the cell, the free electrons on the surface of the metal particles oscillate under the action of light. The electromagnetic field is confined to a small area on the surface of the particles and is enhanced, which is beneficial for the absorption of light by the cells. This study provides a basis for theoretical research and feasible solutions for the manufacture of thin-film solar cells with a high absorption rate and high efficiency.