Abstract
The numerical modeling of cadmium telluride (CdTe) thin-film solar cell employing p + Cu2O as the hole Interface Layer is presented in this study. SCAPS software was used to analyze the performance of ZnO/CdS/CdTe/Cu2O with different absorber layer thicknesses. Cuprous oxide (Cu2O) is used as a hole transport layer in the suggested structure. Efficiency (η) without Cu2O is 19.10 percent (with VOC = 0.81 V, JSC = 27.12 mA/cm2, FF = 86.01 percent) and efficiency (η) with Cu2O is 25.39 percent (with VOC = 1.11 V, JSC = 27.91 mA/cm2, FF = 83.53 percent) for ZnO/CdS/CdTe/Cu2O structure. The Cu2O layer minimizes recombination losses at the back contact, increasing the cell's efficiency. As a result, utilizing SCAPS to simulate the proposed cell is beneficial to understand photovoltaic devices.
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