CdSe Films Research Articles

Terahertz-Driven Stark Spectroscopy of CdSe and CdSe-CdS Core-Shell Quantum Dots.

The effects of large external fields on semiconductor nanostructures could reveal much about field-induced shifting of electronic states and their dynamical responses and could enable electro-optic device applications that require large and rapid changes in optical properties. Studies of quasi-dc electric field modulation of quantum dot (QD) properties have been limited by electrostatic breakdown processes observed under high externally applied field levels. To circumvent this, here we apply ultrafast terahertz (THz) electric fields with switching times on the order of 1 ps. We show that a pulsed THz electric field, enhanced by a microslit field enhancement structure (FES), can strongly manipulate the optical absorption properties of a thin film of CdSe and CdSe-CdS core-shell QDs on the subpicosecond time scale with spectral shifts that span the visible to near-IR range. Numerical simulations using a semiempirical tight binding model show that the band gap of the QD film can be shifted by as much a 79 meV during these time scales. The results allow a basic understanding of the field-induced shifting of electronic levels and suggest electro-optic device applications.

Гидрохимический синтез халькогенидов металлов. Часть 41. Гидрохимическое осаждение тонких пленок селенида кадмия селеносульфатом натрия

The group II-VI semiconductor materials including Cadmium Selenide (CdSe) thin films are widely used in many fields of science and technology, in particular in optoelectronics, nanoelectronics and solar energy. Chemical bath deposition (CBD) represents the simplest and the most available technique for deposition of semiconducting layers. CBD is characterized by deletion of toxic gaseous precursors, operation at low temperature and using of inexpensive equipment. The ionic equilibriums in reaction mixture «CdCl2 – L − Na2SeSO3» (L− NH4OH or Na3C6H5¬O7 or mixture of NH4OH and Na3C6H5¬O7 ) were calculated in present work. The prevailing cadmium complex compounds were determined in appropriate for CBD of cadmium selenide films pH range. The main complex compounds inhibiting fast formation of cadmium selenide are Cd(OH)Cit^(2-) complex (in citrat- and ammonia-citrat mixtures) and 〖Cd(NH_3)〗_5^(2+) complex (in ammonia mixture). Also the boundary conditions of forming CdSe and Cd(OH)2 in reaction mixture were determined by thermodynamic calculation based on crystallization factor to estimate the formation conditions of main (CdSe) and impurity (Cd(OH)2) phases. The results of the calculations show that the solid phase of cadmium selenide is possible to form in pH range from 10 to 14. CdSe films were grown by chemical bath deposition on glass substrates at a temperature of 353 K. The thickness of films ranges from 100 to 220 nm. The grain size of films is about 30 nm which was determined by electron microscopic investigations. The elemental composition of cadmium selenide was defined by energy dispersive analysis; the ratio of cadmium and selenium is 1.03 : 1.16. The conductivity of n-type was determined by the sign of thermoelectromotive force.

Effect of Copper Doping on Electrical Properties of Polymer Blend CdSe Films Prepared by Chemical Method

The present statement deals with the study of electrical conductivity measurements of CdSe-PVA undoped and CdSe-PVA doped with CU nanocomposite by chemical method. In the electrical measurements, the dark conductivity (σd) and the photoconductivity (σph) of CdSe and CDSE:Cu prepared thin films have been studied in the temperature cycle 308–343 K. The intensity on conductivity and effect of temperature has been analyzed for CdSe and CdSe:Cu nanocomposite films. The conductivity of every sample increases with increasing temperature representing the semiconducting activities of the sample. The value of dark activation energy is more than the photo activation energy due to the shift in energy levels under illumination.

Photoelectrochemical and Surface Analysis of CdSe-Poma Composites on Highly Oriented Pyrolytic Graphite

Over the past decade, semiconductors have been of great interest and are currently found in numerous devices such as: computers, cell phones, and medical equipment. Semiconductors are the integral component of solar cells, converting solar energy into electricity. This research studies the photoactivity and stability of semiconductors cadmium selenide (CdSe) and poly(o-methoxyaniline) (POMA) deposited on highly oriented pyrrolic graphite (HOPG). The CdSe-POMA deposits were electrochemically deposited on HOPG using cyclic voltammetry. The composites were deposited in the following order: (1) CdSe before POMA (CdSe/POMA), (2) POMA before CdSe (POMA/CdSe), and (3) CdSe and POMA simultaneously (CdSe+POMA). For the sequential depositions, the deposition of CdSe and POMA were performed sequentially so that the surface consisted of the desired hybrid. The CdSe layer was deposited for 20 cycles from a solution of 5 mM CdSO4 and 1 mM SeO2 in 0.1 M HClO4. The polymerization of POMA was accomplished by electrochemical cycling for 5 cycles from a 0.06 M o-anisidine solution in 0.1 M HClO4. The deposition of CdSe+POMA was performed by electrochemical cycling for 20 cycles in a solution of 5 mM CdSO4, 1 mM SeO2, and 0.06 M o-anisidine in 0.1 M HClO4. The photoactivity and stability of the deposits were studied using open circuit potentiometry (OCP), cyclic voltammetry (CV), and chronoamperometry (i/t) in 0.1 M Na2SO3. The CdSe/POMA deposit had the greatest photopotential at around 200 mV while POMA/CdSe and CdSe+POMA presented lower photopotentials at 30 mV and 14 mV respectively. Chronoamperometric studies found that CdSe/POMA had the greatest photocurrent density of 17 µA/cm2 compared to 0.05 µA/cm2 for POMA/CdSe and 0.42 µA/cm2 for CdSe+POMA. Photoelectrochemical measurements suggest that POMA/CdSe and CdSe+POMA deposits were less stable than CdSe/POMA. X-ray photoelectron spectroscopy (XPS), Scanning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM) were used to analyze the surface. The surface morphology and chemical composition of the deposits were studied before and after photo-studies to observe the degree of degradation after the sample was exposed to light. Measurements found that the POMA/CdSe and CdSe+POMA deposits degraded more than CdSe/POMA, suggesting that depositing the polymer over the CdSe film might be necessary in reducing the degree of degradation when the sample is exposed to light.

Photoelectrochemical and Surface Analysis of CdSe/Poma Hybrids Deposited on Gold, Platinum, and HOPG Electrodes

Research of semiconductors have increased in popularity over the past decades because of their applications in electronics, biomedical devices, photoelectrochemical cells, and detoxification of organic waste. This study intended to analyze the stability and photoefficiency of the semiconductor hybrid consisting of cadmium selenide and poly(o-methoxyaniline) (CdSe/POMA) deposited on various electrode surfaces, such as: Au, Pt and highly organized pyrolytic graphite (HOPG). The formation of the CdSe/POMA composite on HOPG involved electrochemical deposition of CdSe film for 20 cycles, followed by POMA polymerization for 5 cycles using in both cases cyclic voltammetry method. The potential range of CdSe deposition, from the solution of 5 mM CdSO4 and 1 mM SeO2 in 0.1 M HClO4, was varied depending on the type of the electrode surface: HOPG (0 V to -1.2 V), Pt (0.345 V to -1.1 V), Au (0.4 V to -1.1 V). The chronoamperometric deposition of CdSe was also explored on HOPG, with the deposition occurring at a constant -1.045 V for 32 minutes. The polymerization of POMA was carried out at 50 mV/s from -0.2 V to 0.8 V from the solution of 0.06 M o-anisidine in 0.1 M HClO4. The photoelectrochemical studies of the created composites were performed in the 0.1M Na2SO3 solution using cyclic voltammetry, open circuit potentiometry (OCP), and chronoamperometry. The chronoamperometric deposition of CdSe on HOPG had a smaller response to light with (9 μA/cm2) of photocurrent, suggesting it was less successful than CdSe film on HOPG (22 μA/cm2) obtained by cyclic voltammetry. Therefore, the deposition of CdSe/POMA via cyclic voltammetry was further used for the deposition studies on HOPG, Pt, and Au. The electrode system that produced the largest photopotential of 250 mV was CdSe/POMA/Au, while on Pt (230 mV) and HOPG (220 mV) being slightly smaller. However, the CdSe/POMA/HOPG system presented much faster response time than the composite deposited on Au or Pt, suggesting that this system was more easily stabilized. The chronoamperometric studies observed the greatest photocurrent density for the composite deposited on Au with 50 μA/cm2, while HOPG (17 μA/cm2) and Pt (6 μA/cm2) had smaller current densities. Following photostudies, the surface morphology and composition of CdSe/POMA on the various electrodes were analyzed using X-ray Photoelectron Spectroscopy (XPS), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The surface analysis of the samples before and after photo-studies found that degradation occurred as a result of exposure to light. The degradation of CdSe/POMA composites deposited on Au and Pt was visibly greater in comparison to the CdSe/POMA on HOPG.

Photoelectrochemical properties of the composites based on TiO2 nanotubes, CdSe and graphene oxide

The photoelectrochemical properties of electrodes based on a nanocomposite consisting of TiO2 nanotubes and CdSe films modified with graphene oxide have been studied. It is shown that in such a nanocomposite, a good adhesion of the CdSe layer to the substrate is provided. In this nanocomposite, the cathodic dark leakage currents are lower, and the efficiency of photoelectrodes is higher. From studies of Raman spectra, in which 2LO and 3LO phonon lines were observed, the quality of the modified polycrystalline films of CdSe was concluded. The amount of graphene oxide in NT-TiO2/CdSe/GO composite was determined to be 1.16 mass%, which allows one to obtain optimal photosensitivity of electrodes. It was established that the introduction of graphene oxide into semiconductor electrodes leads to an increase in their photosensitivity which is associated with a decrease of the surface recombination rate. The efficiency of the investigated nanocomposites in the photoelectrochemical cell for hydrogen production was studied together with composites based on graphene materials.

Effect of Organic Additives on Properties of Electrodeposited CdSe Photoanodes

Thin CdSe films were produced by electrodeposition at a constant potential onto glass/FTO conducting substrates from sulfuric acid electrolytes (pH 2.2) containing cadmium sulfate, sodium selenite, and addition of sodium lignosulfonates as a surfactant. The films were characterized by X-ray diffraction analysis, Raman spectroscopy, scanning electron microscopy, atomic-force microscopy, spectrophotometry, and photoelectrochemical measurements to examine their structure, composition, surface morphology, and electrical and optical properties. It was found that sodium lignosulfonate improves the electrical properties of the electrodeposited CdSe photoanodes. The operation of a CdSe/FTO/glass photoanode was tested in an electrochemical cell with electrolyte containing the Fe2+/3+ redox pair with various illumination sources.

Effect of Sm concentration on optical and electrical properties of CdSe nanocrystalline thin film

Abstract Present paper reports optical and electrical properties of samarium doped CdSe nanocrystalline thin film which was grown on a glass substrate by chemical bath deposition method (CBD). X-ray diffraction (XRD) analysis revealed that the deposited films were nanocrystalline with sphalerite cubic structure. The average crystallite size calculated from FWHM of XRD peaks was found to be 10.11 nm. The bandgap of the Sm doped CdSe nanocrystalline thin films was calculated to be 1.91 eV to 2.22 eV. The optical absorption edge of undoped (pure) and Sm doped CdSe films was obtained between 650 nm to 640 nm showing blue shift as compared to bulk CdSe. Sm doping further enhanced the photoconductivity of these films. The I-V characteristic confirmed the suitability of prepared films for photosensor applications.

Thickness dependent variation in structural, optical and electrical properties of CdSe thin films

Cadmium selenide (CdSe) thin films of various thicknesses are deposited on ITO glass substrates by electrodeposition technique using a bath containing cadmium sulfate (3CdSO4·8H2O) and selenium dioxide (SeO2) solution. The structural, optical and electrical characteristics of these thin films are analyzed by X-ray diffraction (XRD), UV–Vis spectrophotometer and four probes setup with current–voltage (I–V) source meter. The XRD study confirmed that the thin films possess polycrystalline nature with cubic structure. The decrease in full width at half maximum and increase in peaks intensity revealed that the crystalline properties of CdSe thin films were enhanced with film thickness. Optical analysis shown that the CdSe thin films possess direct band gap which decreases from 2.67 to 2.47 eV with the increase in thickness. Photoluminescence analysis further revealed an enhancement in optical quality of CdSe thin films with thickness. Electrical analysis (I–V characteristics) showed that the resistivity of CdSe thin film also decreased with increase in thickness. The decrease in the resistivity with increase in CdSe film thickness also accredited to the enhancement of crystallization in thin films.

Understanding the physical properties of CdCl2 treated thin CdSe films for solar cell applications

Nowadays the traditional post CdCl2 thermal treatment to Cd-based thin films is an emerging route to improve the crystallinity and to passivate the grain boundaries which results into augmentation in physical properties of absorber layer. Therefore, in this communication an impact of CdCl2 thermal treatment on physical properties of e-beam deposited CdSe absorber layers has been investigated. The XRD results reveal that these films have dominant reflection (111) plane with cubic phase upto 320 °C and then cubic phase transformed into hexagonal phase with partial oxidation at higher annealing. The optical absorbance is found to be good and transmittance is observed to be very low in the visible region. Surface topological study indicates that the surface roughness is improved with the treatment while the observed Cd and Se along with Cl peaks in EDAX spectra to elemental analysis confirm the deposition of films and CdCl2 treatment. The ohmic nature of the films is visible in current-voltage behavior within the voltage range of −2 and +2 V. The chloride activated CdSe films processed at 320 °C might be anticipated as an efficient absorber-layer for the fabrication of Cd-based solar cells.

Investigation the effect of annealing temperature on the optical properties of CdSe thin films

Introduction: CdSe is an important II–VI semiconducting material dueto its typical optical properties such as small direct band gap (1.7 eV) anda high refractive index and, thus, a major concern is focused on the investigation of optical properties of CdSe thin films which is important topromote the performances of the devices of solid -state such as SC (solar cells), thin film transistors, LED (light-emitting diodes), EBPL (electron–beam pumped lasers) and electroluminescent devices. In the presentwork, CdSe thin films were deposited by thermal evaporation method andthe results have been analysed and presented. Materials and Methods:CdSe thin films has been deposited on glass microscopic slides as substrates of (75×25×1 mm) under room temperature using PVD technique.CdSe blended powders gets evaporated and condensed on the substrate.The film thickness (t = 100 5 nm) which is measured using Michelsoninterferometry method. Transmission spectrum, from 200-1100 nm, arescanned using two beams UV–VIS Spectrophotometer (6850 UV/Vis.Spectrophotometer-JENWAY). The deposited films then were annealedat temperature range of (1500C to 3500C) under vacuum to have a stable phase of the material and prevent surface oxidization. Results andDiscussion: A transmittance spectrum of CdSe thin film is scanned overwavelength range 200 to 1100 nm using a (6850 UV/Vis. Spectrophotometer-JENWAY) at room temperature. The transmittance percentagebetween the as-deposited film and the annealed films change varies from(17.0%) to (47.0%). It is clearly seen that there is a shift toward higher energy (Blue Shift) in the transmittance spectrum. As annealing temperatureincreased the transmittance edge is shifted to the longer wavelength (i.e.,after annealing the CdSe films shows red shifts in their optical spectra).The band gap was found within the range 1.966-1.7536 eV for CdSe thinfilm. As annealing temperature increases, the Eg continuously decreases.Conclusions: CdSe thin films have been deposited using Physical VaporDeposition (PVD) Technique. It is found that the transmission for asdeposited films is (17%) and increases to (47%) as annealing temperature increases. Beside this the energy gap for as- deposited CdSe film is(1.966eV) and decreased from (1.909 eV) to (1.7536eV) as the annealingtemperature increases. There is a strong red shift in optical spectrum ofthe annealed CdSe films. There is a gradual shift of the annealed filmsthin film spectra as compared of bulk CdSe films

Iron Doped CdSe Films with Improved Photosensitivity and Stability for Use in a Liquid Junction Solar Cell

In the present investigation, transition metal Fe has been introduced in low levels in the CdSe matrix to formulate CdFeSe films for application in photoelectrochemical solar cells. Periodic voltammetry was employed to deposit the ternary films on FTO glass. Spectral characteristics, morphology, and composition of the matrices were determined by the respective physiochemical methods. The band gap energies of CdFeSe thin films were increased with the increase of Fe content. Electrochemical impedance spectroscopy, chronoamperometry, and photosensitivity of the film matrices were studied. In order to derive the functional parameters at the anode–electrolyte interface, the cell configuration, FTO/CdFeSe/S2––Sx2–/Pt, coupled with calomel reference electrode was used. Anodic stripping voltammetry was employed to investigate the inherent stability of the film matrices. The performance screening of the films ultimately indicates the best output in terms of photoconversion efficiency (η, %), fill factor (FF, %), a...

Accumulation of Solar Hydrogen in the Photoelectrochemical System Based on CdSe Photoanode and MH Cathode

The film photoanodes based on CdSe and NT-TiO2/CdSe have been formed by the electrochemical and painting methods. It is shown that the introduction of graphene oxide into the structure of the semiconductor CdSe film promotes absorption of light and leads to improvement in their characteristics by 25-30 %. The compatibility of the cathode based on composite of hydrogen-sorbing intermetallic alloys LaNi4.5Mn0.5 + LaNi3.5Al0.7Mn0.8 with current-conductive additives in pair with the CdSe photoanode is shown. It was found that 95 – 98 % of the total current generated under the influence of sunlight at the anodes was used on the formation and accumulation of hydrogen by cathodes.

Alloying and phase transformation in CdS/CdSe bilayers annealed with or without CdCl2

The present paper studies the structural, compositional, morphological and optical properties of thin CdS/CdSe stacks annealed in an inert atmosphere or subjected to a CdCl2 treatment. The bilayer stacks were fabricated by chemical bath deposition (CBD) of a 50 nm thick CdS layer followed by evaporation of a CdSe film with equal thickness. It was found that when this stack was annealed at 400 °C for up to 10 min, no appreciable intermixing/alloying between the two layers was detected. Upon heating for 5–10 min in presence of a CdCl2 layer disposed over the CdSe film, however, led to appreciable alloying and formation of CdSSe, which was confirmed through XRD, optical transmission and room temperature photoluminescence measurements. XRD data further showed that the CdS layer in the CdS/CdSe stack had nano-amorphous structure that did not change upon annealing in inert atmosphere. The CdSe layer of the stack, which had a cubic structure, also preserved its phase upon annealing in inert atmosphere. When the CdS/CdSe stack was CdCl2 treated, the phase of the CdSSe alloy formed was transformed to hexagonal. These observations may have consequences in applications where CdS/CdSe bilayers are formed within device structures and subjected to various types of heat treatments.

Spectroscopic ellipsometry investigations of Cd-Se thin film electrochemically prepared

Binary Cadmium selenium (Cd-Se) thin film deposited onto glass substrate coated by indium tin oxide (ITO) using electrodeposition method at room temperature. Structural, morphological and optical properties has been investigated by X-ray diffraction (XRD), scanning electron microscope (SEM) and variable angle spectroscopic ellipsometry (VESA). XRD pattern shows that the nature film is polycrystalline where both (hexagonal) Se and (hexagonal) CdSe crystalline phases coexist. Based on the (SEM) images, it was found that micro-structures consist of dense layers or agglomerates suggesting an acceptable adhesion between ITO layers and Cd-Se films. VESA measurements on the Cd-Se are presented in the energy range of 1.–5 eV with different incident angles and at room temperature. The experimental data of SE were fit using a linear summation from Gaussian and Tauc-Lorentz oscillator functions. Each function was employed to fit a range of absorption spectrum from ultraviolet, visible and infrared regions. Optical constants such as pseudo refractive index, pseudo extinction coefficient, real and imaginary parts of the pseudo dielectric function were determined. The optical energy band gap (Eg) of prepared film is 2.16 and 1.14 eV for the direct allowed and indirect allowed transitions, respectively.

Electronic energy levels and electrochemical properties of co-electrodeposited CdSe thin films

CdSe semiconductor thin films were grown on indium tin oxide (ITO) coated glass substrates by co-electrochemical deposition method. Deposition potential was kept at − 0.95 V vs. Ag/AgCl reference electrode for ten minutes. Deposition electrolyte includes an aqueous solution of 10 mM CdCl2, 20 mM H2SeO3 as precursors, 200 mM LiCl as complexing agent, and HCl for adjusting of pH. Deposited CdSe thin film was annealed at 500 °C for 30 min in air medium. Precursor and annealed CdSe thin films were characterized using a number of techniques, including SEM, EDX, XRD, UV–vis spectroscopy, and electrochemical impedance spectroscopy. SEM studies show that annealing alters the surface of precursor CdSe film from smooth to granular appearance. According to EDX analyses, the ratio of Cd/Se is close to 1.07 and 1.04 for the precursor and annealed CdSe thin film, respectively. XRD analysis shows that each film has polycrystalline structure. Precursor film has only cubic structure of CdSe, while annealed film has hexagonal structure of CdSe and cubic crystal phase of CdO. Optical energy band gap of the as-deposited CdSe film increases from 1.64 to 1.71 eV after annealing due to the mixture of the two phases. Refractive index against wavelength changes between 2.0 and 3.3. Calculations performed by using the data of Mott-Schottky measurements show that precursor CdSe film has 1.72 × 1016 cm−3, while annealed film is of 3.65 × 1017 cm−3 carrier concentration. The prepared films exhibit n-type semiconductor character. The study reports energy level diagrams of the produced semiconductor CdSe thin films by using the Mott-Schottky and Tauc's approximations. The carrier transport properties in the interface between active CdSe thin film and electrolyte are discussed based on an equivalent electronic circuit simulated to the Nyquist data of the CdSe/electrolyte system.

Silver Dopant-Induced Effect on Structural and Optoelectronic Properties of CdSe Thin Films

Thin films of CdSe and silver (Ag)-doped CdSe have been prepared on glass substrates by thermal evaporation in argon gas atmosphere. X-ray diffraction pattern indicates the presence of hexagonal structure with preferred orientation along (100) plane. Elemental composition of the thin films has been analyzed using energy dispersive X-ray analysis. Scanning electron microscopy has been used to investigate the morphology of the thin films. Transmission electron microscope reveals spherical nature of nanoparticles. A decrease in the band gap due to the formation of band tails in the band gap with increase in Ag doping in CdSe lattice has been observed. Photoluminescence spectra indicate redshift in band edge emission peak with increase in Ag doping in CdSe. Electrical conductivity measurements are also studied, and two types of conduction mechanisms taking part in the transport phenomena are observed. Hall measurements indicate n-type behavior of undoped and Ag-doped CdSe thin films.

Performance of the Yb/n-CdSe/C Tunneling Barriers

In this article, the design and performance of the CdSe which are deposited onto thin films of Yb metal is reported and discussed. The thin films of CdSe which are deposited by the physical vapor deposition technique are observed to exhibit slightly deformed hexagonal polycrystalline nature with excess amount of Cd as confirmed by the X-ray, energy dispersive X-ray spectroscopy and scanning electron microscopy techniques. The n-type CdSe is also found to form a Schottky barrier of tunneling type when sandwiched between Yb and carbon. The quantum mechanical tunneling mechanism in this device which was tested and modeled in the frequency domain of 10–150 MHz is found to exhibit average intersite separations of ∼5 nm. The tunneling device exhibited a widening in the depletion region associated with significantly large capacitance tunability in the studied frequency domain. On the other hand, as an optoelectronic device, the Yb/n-CdSe/C Schottky diode exhibited a responsivity of ∼0.10 A/W, photosensitivity of 6.5 × 104 and external quantum efficiency of 54% when biased with 1.0 V and exposed to laser light of wavelength of 406 nm.

Effect of ligand exchange on photocurrent enhancement in cadmium selenide (CdSe) quantum dot water splitting cells

We report photocurrent enhancement through ligand exchange in cadmium selenide (CdSe) photoelectrochemical (PEC) cells. CdSe quantum dot (QD) layers were used as a light absorption layer in combination with titanium dioxide (TiO2) layers. For a shorter ligand exchange, pristine CdSe QDs with oleic acid (OA) ligands were treated with 1,2-ethanedithiol (EDT) and CdSe QD PEC cells exhibited enhanced photocatalytic properties in comparison with pristine CdSe PEC cells. To articulate the origin of enhanced photocurrent, ligand dependent energy band bending at the CdSe/TiO2 interface was probed from thickness dependent highest occupied molecular orbital level measurements using photoelectron spectroscopy in air. Increase in the photocurrent also originates from enhancement in charge transport through ligand exchange to shorter EDT ligands in the bulk CdSe film with OA ligands suppressing back diffusion of carriers from TiO2 to CdSe.

A short review of CdTe and CdSe films: growth and characterization

Cadmium based thin films including CdTe and CdSe show great potential for the use in the field of solar cells, optoelectronic and biomedical applications. This work gives a brief review of the preparation of CdSe, and CdTe films by using various deposition techniques. The chemical bath deposition method was used to deposit CdSe films using three precursors such as cadmium nitrate, cadmium sulfate and cadmium acetate are reported. Also, this article reviews on the experimental advances in electrodeposited of CdSe and screen printed cadmium telluride thin films. Various characterization techniques namely, X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDAX), scanning electron microscopy (SEM), UV-Visible spectrophotometer (UV-Vis) were used in the present research work have been discussed.