We find a statistically significant correlation between carrier concentration and the Lorentzian linewidth factor determined from a Voigt lineshape fit to roomtemperature photoluminscence (PL) measurements for partially ordered p-Ga0.52In0.48P epitaxially deposited by organometallic vapor-phase deposition on GaAs. The correlation is independent of the amount of ordering present in the material. For carrier concentrations over the range of ~1016 to 1019 cm−3, PL provides rapid and nondestructive evaluation, with increasing accuracy above carrier concentration levels of 5 × 1017 cm3.