Abstract
Electrical transport properties have been studied of polycrystalline thin films of In2O3 and In2O3∶Sn prepared by a chemical spray technique on a glass substrate. Dominant carrier scattering processes have been discussed critically by studying the Hall mobility and Seebeck coefficient. It has been observed that the Hall mobility in these films is mostly limited either by the optical mode of lattice scattering or by the acoustic mode of scattering, and there is a critical level of the carrier concentration at which one is masked by the other. The position and nature of the Fermi levels were also determined for these degenerate semiconductor samples.
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