The constant innovation of devices in the semiconductor industry to improve performance to meet very specific demands has led to the study and exploration of a host of new materials. The use of ternary and quaternary materials, organic materials, amorphous silicon are a few examples of promising alternatives to traditional crystalline silicon. However, the use of novel materials presents a unique challenge for a theoretical analysis using device simulation. Traditional device simulation methods are sometimes not enough to capture the nuances of transport. In this paper we study transport through amorphous silicon to evaluate it's role in a-Si/c-Si HIT Cell and it's potential for other device operations by the use of Kinetic Monte Carlo (KMC) method. As an amorphous materials lack long range order, it is near impossible to create a bandstructure for it and conduct Ensemble Monte Carlo (EMC) simulations to study transport through the material. Also, the presence of many defects creates localized states below the conduction band which facilitates hopping transport. As hopping transport happens through a series of capture and emission processes, the time scales of these mechanisms render the use of a traditional EMC unfeasible. It is crucial to understand the nature of the defects/traps that are present in the amorphous material. Understanding defect assisted transport is the key to understanding how the amorphous silicon layer will affect overall device performance. Defect assisted transport (DAT) can be conducted in the amorphous material through various different mechanisms such as capture of carriers by a defect, tunneling emission, Pool-Frenkel emission, defect to defect transition etc. Using the Kinetic Monte Carlo approach we will be able to simulate individual charge carriers that interact with point like defects over a period of time. However, the transient nature of the KMC is not limited to short time scales. Also, the suggested method can be used to study the effect of many transition mechanisms. This method facilitates the simulation of the many individual steps in a Markovian chain that mimics carriers moving through various defects. We study hopping transport through a triangular barrier with use of phonon assisted mechanisms to analyze current and carrier transit times. The distribution function is also analyzed before and after defect assisted transport. One of our primary objectives is to study the role played by the amorphous silicon layer in determining overall device performance of a-Si/c-Si HIT Cell.