Carrier distributions in InGaN/GaN light‐emitting diodes

Abstract

The distribution of carriers in InGaN/GaN quantum well light‐emitting diodes is frequently calculated using drift‐diffusion models. Using this type of approach, it is found that the holes are preferentially captured into the quantum wells closest to the p‐type injection layer. This type of model, however, only deals with the initial capture of carriers into the quantum wells, and not any subsequent redistribution of carriers caused by carrier escape or tunnelling. However, thermally driven carrier redistribution in InGaN/GaN quantum wells has been reported, so in this work, we have studied the effects of carrier redistribution across the quantum well stack in a light‐emitting diode structure containing five quantum wells. We find that the holes are distributed amongst the available quantum wells with a more uniform population profile than would be predicted using a drift‐diffusion model.