6H-SiC nanowires are synthesized by pine needle carbothermal method, the nano-morphology and crystal structure characterizations show that the nanowires have wurtzite structure, the diameter is about 100–200nm with a crystal growth direction of [102], the length exceeds 10μm. Nano-field-effect transistors are constructed based on individual nanowire, the electrical investigation indicate that the as-synthesized 6H-SiC nanowires present p-type conductivity, the mobility is 5.7×108cm2V−1S−1 and carriers concentration is 5.2×1018cm−3. This p-type conductivity is attributing to the deviation of stoichiometric composition during the nucleation and growth processes. The as-synthesized 6H-SiC NWs will be excellent compounds semiconductor materials for the nanoelectronic applications.