Carbon Impurities Research Articles

The effectiveness of D2 pellet injection in reducing intra-ELM and inter-ELM tungsten divertor erosion rates in DIII-D during the Metal Rings Campaign

Edge localized modes (ELMs) in H-mode plasmas erode plasma-facing components (PFCs) and lead to impurities in the core, reducing confinement. This study analyzes D2 pellet injection on the DIII-D fusion experiment used as an ELM mitigation technique applied during the 2016 tungsten Metal Rings Campaign to reduce W erosion during ELMs. The 400.9 nm photon wavelength line emission intensity of tungsten atoms (WI) filterscope channels and Langmuir probes were used to infer the gross erosion rate of tungsten-coated tiles installed in the divertor of DIII-D. D2 mass injection rates ranging from 34 to 41 arbitrary units (A.U.) and no D2 injection resulted in a similar total W erosion rate during ELMs (intra-ELM). On average, results show a 29% increase in the total gross W erosion rate with intermediate mass injection rates (∼13–23 A.U.) compared to the no pellets and the highest injection rate cases. On average, the fast D2 mass injection rate cases had 15% less erosion in the inter-ELM phase than the case with no pellets. Generally, higher D2 mass injection rates increased the ELM frequency, and the highest injection rates reduced the average erosion per ELM and fractional carbon impurities at the top of the pedestal by nearly 40% when compared to the no-pellet case. As expected, a higher D2 pellet injection rate led to a higher plasma density and lower plasma temperature in the divertor. Additionally, an increasing divertor inter-ELM plasma electron density directly correlated to more frequent pellet injection and a decrease in both the average gross intra-ELM W erosion and the total gross intra-ELM W erosion rate. Simulations of intra-ELM erosion using the ‘free-streaming plus recycling model’ (FSRM) underestimate W erosion during pellet injection by about 30% on average. The discrepancies between the experimental measurements and the FSRM intra-ELM W erosion predictions are postulated to be due to C/W material mixing. A simple analytic mixed-material model is presented and results in better agreement with the experimental data. These results highlight the importance of incorporating the effects of a mixed-material layer in the analysis of PFC erosion.

Selectively Nitrogen Doped ALD-IGZO TFTs with Extremely High Mobility and Reliability.

Achieving high mobility and reliability in atomic layer deposition (ALD)-based IGZO thin-film transistors (TFTs) with an amorphous phase is vital for practical applications in relevant fields. Here, we suggest a method to effectively increase stability while maintaining high mobility by employing the selective application of nitrous oxide plasma reactant during plasma-enhanced ALD (PEALD) at 200 °C process temperature. The nitrogen-doping mechanism is highly dependent on the intrinsic carbon impurities or nature of each cation, as demonstrated by a combination of theoretical and experimental research. The Ga2O3 subgap states are especially dependent on plasma reactants. Based on these insights, we can obtain high-performance indium-rich PEALD-IGZO TFTs (threshold voltage: -0.47 V; field-effect mobility: 106.5 cm2/(V s); subthreshold swing: 113.5 mV/decade; hysteresis: 0.05 V). In addition, the device shows minimal threshold voltage shifts of +0.45 and -0.10 V under harsh positive/negative bias temperature stress environments (field stress: ±2 MV/cm; temperature stress: 95 °C) after 10000 s.

Quantitative analysis of carbon impurity concentrations in GaN epilayers by cathodoluminescence

In this work, a technique for quantifying carbon doping concentrations in GaN:C/AlGaN buffer structures using cathodoluminescence (CL) is presented. The method stems from the knowledge that the blue and yellow luminescence intensity in CL spectra of GaN varies with the carbon doping concentration. By calculating the blue and yellow luminescence peak intensities normalised to the peak GaN near-band-edge intensity for GaN layers of known carbon concentrations, calibration curves that show the change in normalised blue and yellow luminescence intensity with carbon concentration in the 1016 − 1019 cm−3 range were derived at both room temperature and 10 K. The utility of such calibration curves was then examined by testing against an unknown sample containing multiple carbon-doped GaN layers. The results obtained from CL using the normalised blue luminescence calibration curves are in close agreement with those from secondary-ion mass spectroscopy (SIMS). However,the method fails when applying calibration curves obtained from the normalised yellow luminescence likely due to the influence of native VGa defects acting in this luminescence region. Although this work shows that indeed CL can be used as a quantitative tool to measure carbon doping concentrations in GaN:C, it is noted that the intrinsic broadening effects innate to CL can make it difficult to differentiate between the intensity variations in thin ( < 500 nm) multilayered GaN:C structures such as the ones studied in this work.

Dielectric Environment Sensitivity of Carbon Centers in Hexagonal Boron Nitride.

A key advantage of utilizing van-der-Waals (vdW) materials as defect-hosting platforms for quantum applications is the controllable proximity of the defect to the surface or the substrate allowing for improved light extraction, enhanced coupling with photonic elements, or more sensitive metrology. However, this aspect results in a significant challenge for defect identification and characterization, as the defect's properties depend on the the atomic environment. This study explores how the environment can influence the properties of carbon impurity centers in hexagonal boron nitride (hBN). It compares the optical and electronic properties of such defects between bulk-like and few-layer films, showing alteration of the zero-phonon line energies and their phonon sidebands, and enhancements of inhomogeneous broadenings. To disentangle the mechanisms responsible for these changes, including the atomic structure, electronic wavefunctions, and dielectric screening, it combines ab initio calculations with a quantum-embedding approach. By studying various carbon-based defects embedded in monolayer and bulk hBN, it demonstrates that the dominant effect of the change in the environment is the screening of density-density Coulomb interactions between the defect orbitals. The comparative analysis of experimental and theoretical findings paves the way for improved identification of defects in low-dimensional materials and the development of atomic scale sensors for dielectricenvironments.

Numerical study of impurity effects on ion temperature gradient modes in tokamak edge plasmas based on the Euler matrix eigenvalue method

Low-Z impurity injection is frequently used for divertor detachment operations in current tokamaks; however, the impurity effects on the main plasma are yet to be fully understood. In this paper, the impurity effects on the ion temperature gradient (ITG) modes in tokamak edge plasmas are investigated based on the Euler matrix eigenvalue method. The eigen-equations with multiple ion species are established from the fundamental gyrokinetic theory, in which each ion species is treated equally. A novel and efficient gyro-kinetic code is developed for this numerical study, and the code’s availability to examine quasi-linear ITG modes is demonstrated by its comparison with existing results. At the pedestal top parameters in Experimental Advanced Superconducting Tokamak high-β p H-mode plasmas, the ITG mode behavior is investigated in pure deuterium plasmas and with impurities. Impurities can induce destabilizing or stabilizing effects on ITG modes, which are determined by the impurity density scale length. The inwardly peaked impurity density profile tends to reduce the ITG growth rate. The effect strength also increases with the impurity charge concentration. The effects of impurity species, including boron, carbon, neon and argon, are also evaluated. Numerical results show that the strength of destabilizing or stabilizing effect inverses with impurity ion charge at the same effective charge.

Wake-up free ferroelectric hafnia-zirconia capacitors fabricated via vacuum-maintaining atomic layer deposition

Ferroelectric hafnium-zirconium oxide (HZO) is an excellent candidate for low-power non-volatile memory applications due to its demonstrated ferroelectricity at the nanoscale and compatibility with silicon-based technologies. The interface of HZO in contact with its electrode, typically TiN in a metal–ferroelectric–metal (MFM) capacitor configuration, is of particular interest because factors, such as volume confinement, impurity concentration, interfacial layers, thermal expansion mismatch, and defect trapping, are believed to play a crucial role in the ferroelectric performance of HZO-based devices. Processing variables, such as precursor type, oxygen source, dose duration, and deposition temperature, are known to strongly affect the quality of the oxide–metal interface. However, not many studies have focused on the effect of breaking or maintaining vacuum during MFM deposition. In this study, sequential, no-atmosphere processing (SNAP) is employed to avoid atmospheric exposure, where electrode TiN and ferroelectric HZO are deposited sequentially in the atomic layer deposition chamber without breaking vacuum. The effect of breaking vacuum during the sequential deposition steps is elucidated by fabricating and characterizing MFM capacitors with and without intentional vacuum breaks prior to the deposition of the HZO and top TiN. Using x-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry (ToF-SIMS), we reveal that breaking vacuum after bottom TiN electrode deposition leads to interfacial oxidation and increased carbon contamination, which preferentially stabilizes the non-ferroelectric tetragonal phase and lead to diminished remanent polarization. Avoiding carbon impurities and interfacial TiOx at the HZO and TiN interface using SNAP leads to heightened remanent polarization, reduced leakage current density, and elimination of the wake-up effect. Our work highlights the effect of vacuum breaking on the processing-structure-properties of HZO-based capacitors, revealing that maintaining vacuum can significantly improve ferroelectric properties.

Electrochemical surface rehydrogenation of boron-doped diamond electrodes after electrochemical polishing

Non-diamond carbon impurity and surface roughness are features that can affect the response of boron-doped diamond (BDD) electrodes. Herein, we report on the electropolishing of BDD electrodes carried out in the presence of acetic and sulfuric acid for different times (1, 2, and 4 h). The wet electrochemical treatment smooths the polycrystalline diamond surface and reduces the non-diamond sp2 carbon impurity content while increasing the surface oxygen content. Changes in surface texture and microstructure were revealed by atomic force microscopy, Raman spectroscopy, and cyclic voltammetry. Subsequently, the surface oxygen content was reduced by increasingly severe cathodic pretreatments (CPTs). This was revealed by changes in the voltametric response for the [Fe(CN)6]3−/4– and ascorbic acid (AA) redox systems, as both exhibit electron transfer kinetics sensitive to the level of oxidation of the BDD surface. For [Fe(CN)6]3−/4–, greater ∆Ep values were obtained for the electropolished (EP-BDD) electrodes, as compared to the as received (AR-BDD) electrode. However, after CPTs the EP-BDD electrodes exhibited smaller ∆Ep values (∼60 mV), which indicate significantly improved electrochemical reversibility and faster electron-transfer kinetics caused by the decreased level of surface oxidation (greater hydrogenation). The increased surface oxygen content brought on by the electropolishing process had also a significant effect on the AA oxidation peak potential (Eap), making it at least ∼140 mV more positive than that for the AR–BDD electrode. However, after CPTs the Eap values for the EP–BDD electrodes became at least ∼0.1 V less positive than that for the AR–BDD electrode, indicating that the surface of the EP-BDD electrodes possesses less surface carbon‑oxygen functional groups (i.e., it is more hydrogenated). The combination of electropolishing and cathodic pretreatment is a way to process the BDD electrode surface to create a smoother, low oxygen surface in much the same way as a hydrogen plasma treatment does.

Energy deposition and deflection of α particles in hot dense plasmas relevant to inertial confinement fusions

Based on the kinetic theory, improved T-matrix models for the continuous-slowing-down and the linear-energy-transfer stopping powers are established at the same level, where multiple scattering effects and the related transverse deflection are accounted for consistently and systematically. The degree of deflection characterizing the extent of transverse deflection is defined by means of the ratio of these two stopping powers. Calculations for the energy deposition and deflection of α particles in hot dense deuterium–tritium (DT) plasmas and also in hot dense DT plasmas mixed with carbon (C) impurities are performed. Multiple scattering effects and the resulting transverse deflection are demonstrated to have a significant influence on the stopping power of α particles, in particular, in mixtures containing different ions with large mass and charge asymmetry. It is shown that for DT plasma mixed with C impurities, the range and penetration depth of the α particle are shortened by about and , respectively. Our models are found to be appropriate for the evaluation of stopping powers not only in weakly coupled plasmas but also in moderately degenerate and correlated plasmas. These results manifest that multiple scattering effects and the induced transverse deflection need to be taken into account in modeling the transport of α particles in hot dense plasmas relevant to inertial confinement fusion.

Deep learning enhanced noise spectroscopy of a spin qubit environment

The undesired interaction of a quantum system with its environment generally leads to a coherence decay of superposition states in time. A precise knowledge of the spectral content of the noise induced by the environment is crucial to protect qubit coherence and optimize its employment in quantum device applications. We experimentally show that the use of neural networks (NNs) can highly increase the accuracy of noise spectroscopy, by reconstructing the power spectral density that characterizes an ensemble of carbon impurities around a nitrogen-vacancy (NV) center in diamond. NNs are trained over spin coherence functions of the NV center subjected to different Carr–Purcell sequences, typically used for dynamical decoupling (DD). As a result, we determine that deep learning models can be more accurate than standard DD noise-spectroscopy techniques, by requiring at the same time a much smaller number of DD sequences.

Discriminatory Gate-Opening Effect in a Flexible Metal-Organic Framework for Inverse CO2 /C2 H2 Separation.

Considering the significant application of acetylene (C2 H2 ) in the manufacturing and petrochemical industries, the selective capture of impurity carbon dioxide (CO2 ) is a crucial task and an enduring challenge. Here, a flexible metal-organic framework (Zn-DPNA) accompanied by a conformation change of the Me2 NH2 + ions in the framework is reported. The solvate-free framework provides a stepped adsorption isotherm and large hysteresis for C2 H2 , but type-I adsorption for CO2 . Owing to their uptakes difference before gate-opening pressure, Zn-DPNA demonstrated favorable inverse CO2 /C2 H2 separation. According to molecular simulation, the higher adsorption enthalpy of CO2 (43.1kJmol-1 ) is due to strong electrostatic interactions with Me2 NH2 + ions, which lock the hydrogen-bond network and narrow pores. Furthermore, the density contours and electrostatic potential verifies the middle of the cage in the large pore favors C2 H2 and repels CO2 , leading to the expansion of the narrow pore and further diffusion of C2 H2 . These results provide a new strategy that optimizes the desired dynamic behavior for one-step purification of C2 H2 .

EUV/VUV Spectroscopy for the Study of Carbon Impurity Transport in Hydrogen and Deuterium Plasmas in the Edge Stochastic Magnetic Field Layer of Large Helical Device

The ergodic layer in the Large Helical Device (LHD) consists of stochastic magnetic fields exhibiting a three-dimensional structure that is intrinsically formed by helical coils. Spectroscopic diagnostics was employed in the extreme ultraviolet (EUV) and vacuum ultraviolet (VUV) wavelength ranges to investigate emission lines of carbon impurities in both hydrogen (H) and deuterium (D) plasmas, aiming to elucidate the impact of distinct bulk ions on impurity generation and transport in the edge plasmas of the LHD. The emission intensity of carbon CIII, CIV, CV, and CVI lines is significantly higher in the D plasma compared to the H plasma, indicating a greater sputtering rate of carbon materials in the D plasma, resulting in a higher quantity of carbon impurities originating from the divertor plates. A Doppler profile measurement of the second order of CIV line emission (1548.20 × 2 Å) was attempted using a 3 m normal-incidence VUV spectrometer in the edge plasma at a horizontally elongated plasma position. The flow velocity reaches its maximum value close to the outermost region of the ergodic layer, and the observed flow direction aligns with the friction force in the parallel momentum balance. The flow velocity increases with the electron density in H plasmas, suggesting that the friction force becomes more dominant in the force balance at higher density regimes. This leads to an increase in the impurity flow, which can contribute to the impurity screening. In contrast, the flow velocity in the D plasma is smaller than that in the H plasma. The difference in flow values between D and H plasmas, when the friction force term dominates in the momentum balance, could be attributed to the mass dependence of the thermal velocity of the bulk ions.

Simulation study on 300mm monocrystalline silicon celerity single crystal

Since entering the 21st century, the survival and development of mankind are faced with great challenges and great opportunities. With the decrease of petroleum, coal, natural gas and other resources, a large number of harmful products generated in the combustion process of fossil fuels have caused incalculable adverse effects on human living environment. Thermal stress in crystals is one of the key factors affecting the properties of solar level monocrystalline silicon. In this paper, the relationship between the heat loss mode and the stress in crystal is studied. If carbon is introduced into the crystal growth process, it will promote the formation of oxygen precipitation and SiC precipitated phase, resulting in increased stress in the crystal, thus affecting the quality of monocrystalline silicon. The distribution of carbon impurities in the melt is closely related to the convection behavior of the melt. The carbon atoms in the atmosphere diffused into the melt mainly through the free surface area near the crucible wall. By adjusting the structural parameters of symmetric magnetic field and asymmetric magnetic field, the convection intensity in the carbon atom doped region can be suppressed, the thickness of carbon atom diffusion layer can be increased, and the oxygen content and distribution uniformity in the crystal can be controlled by magnetic pull technology to improve the crystal quality.

Investigation on the effect of carbon on clustering of defects in tungsten by first principles calculations

Carbon (C) impurity would be inevitably introduced in the process of industrial-scale tungsten production. In this work, by using the first-principles density functional theory, the C atom behaviors in tungsten lattice and the effect of C atom on defects clustering have been studied systematically. Calculation results show that C atom prefers to occupy the octahedral interstitial site of the tungsten lattice, the migration barrier energy of C atom is 1.46 eV along the optimal pathway. Both vacancy cluster and C atom can form stable complex structure according to the attractive interaction, and C atom promotes the nucleation of the vacancy cluster. The growth mechanism shows that vacancy clusters are more likely to grow by combining a cluster rather than a single vacancy, where C atom plays a positive role of promoting vacancy clusters nucleation. In addition, C atom can cause tungsten lattice distortion and lead to the formation of the potential well, which prompts SIA rapidly diffuse toward it and forms a SIA-C complex structure. The calculation results of the nucleation rate indicate that C atom can enlarge the effective radius of the 2SIA cluster, and enhance the nucleation rate of 3SIA cluster. Therefore, we conjecture that the C atom can inhibit the recovery of the Frenkel pair and weaken the self-repair of the tungsten materials under irradiation. These results are meaningful for further understanding the mechanism of the effect of C impurity for the defects evolution of irradiation defects of W-based material.

On the Importance of Nanoparticle Necks and Carbon Impurities for Charge Trapping in TiO2.

Particle attachment and neck formation inside TiO2 nanoparticle networks determine materials performance in sensing, photo-electrochemistry, and catalysis. Nanoparticle necks can feature point defects with potential impact on the separation and recombination of photogenerated charges. Here, we investigated with electron paramagnetic resonance a point defect that traps electrons and predominantly forms in aggregated TiO2 nanoparticle systems. The associated paramagnetic center resonates in the g factor range between g = 2.0018 and 2.0028. Structure characterization and electron paramagnetic resonance data suggest that during materials processing, the paramagnetic electron center accumulates in the region of nanoparticle necks, where O2 adsorption and condensation can occur at cryogenic temperatures. Complementary density functional theory calculations reveal that residual carbon atoms, which potentially originate from synthesis, can substitute oxygen ions in the anionic sublattice, where they trap one or two electrons that mainly localize at the carbon. Their emergence upon particle neck formation is explained by the synthesis- and/or processing-induced particle attachment and aggregation facilitating carbon atom incorporation into the lattice. This study represents a substantial advance in linking dopants, point defects, and their spectroscopic fingerprints to microstructural features of oxide nanomaterials.

When carbon impurities trigger the synthesis of alpha boron at high pressure and high temperature

When carbon impurities trigger the synthesis of alpha boron at high pressure and high temperature

Ligand Size and Carbon-Chain Length Study of Silver Carboxylates in Focused Electron-Beam-Induced Deposition.

Gas-assisted focused electron-beam-induced deposition is a versatile tool for the direct writing of complex-shaped nanostructures with unprecedented shape fidelity and resolution. While the technique is well-established for various materials, the direct electron beam writing of silver is still in its infancy. Here, we examine and compare five different silver carboxylates, three perfluorinated: [Ag2(µ-O2CCF3)2], [Ag2(µ-O2CC2F5)2], and [Ag2(µ-O2CC3F7)2], and two containing branched substituents: [Ag2(µ-O2CCMe2Et)2] and [Ag2(µ-O2CtBu)2], as potential precursors for focused electron-beam-induced deposition. All of the compounds show high sensitivity to electron dissociation and efficient dissociation of Ag-O bonds. The as-deposited materials have silver contents from 42 at.% to above 70 at.% and are composed of silver nano-crystals with impurities of carbon and fluorine between them. Precursors with the shortest carbon-fluorine chain ligands yield the highest silver contents. In addition, the deposited silver content depends on the balance of electron-induced ligand co-deposition and ligand desorption. For all of the tested compounds, low electron flux was related to high silver content. Our findings demonstrate that silver carboxylates constitute a promising group of precursors for gas-assisted focused electron beam writing of high silver content materials.

Fracability Evaluation Method of a Fractured-Vuggy Carbonate Reservoir in the Shunbei Block.

The fracability of carbonate reservoirs is a key indicator for evaluating whether reservoirs can be effectively fractured. Taking the fractured-vuggy carbonate reservoir in the Shunbei block as an example, the microscopic characteristics and mechanical properties of this reservoir were analyzed. The test results showed that the core microstructure is relatively dense, the micropores and microfractures are developed, and the mineral composition is characterized by "high carbonate and few impurities". The compressive strength, Young's modulus, and Poisson's ratio of the rock increased with the increase in the confining pressure. Poisson's ratio is more sensitive to confining pressure than Young's modulus and shows the ductile transformation tendency from a low confining pressure to a high confining pressure. Considering the difficulty of forming a complex fracture network, we put forward a "fracture propagation factor" equation constructed with five main factors, including brittleness, fracture toughness, natural fracture, hole size, and horizontal stress difference, and then the fracture propagation factor of Yijianfang formation is calculated to be greater than 0.5. It is known that the Yijianfang formation has higher fracability. On this basis, combined with the construction parameters, a model for evaluating the fracability of a fractured-vuggy carbonate reservoir was established. The comprehensive fracability of four wells in the Shunbei block was calculated by the model. From the calculation results, the comprehensive fracability index of SHB43X was 0.5406 and greater than that of the other three wells, which has a high correlation with the production after fracturing.

Cavity-Enhanced Raman Spectroscopy for Detection of Trace Gaseous Impurities in Hydrogen for Fuel Cells

Gaseous impurities contained in hydrogen (H2) profoundly affect the performance of hydrogen proton-exchange membrane fuel cells. We demonstrate the utility of cavity-enhanced Raman spectroscopy as a unique approach for detection of gaseous impurities. A dense-pattern multipass cavity which is composed of four spherical mirrors placed in a Z-shaped configuration is used to enhance the Raman signal by extending the laser-gas interaction length. A total of 85 spots are identified on the 2-inch-diameter front (or rear) mirror, which indicates that 510 beams exist in the cavity. Detection limits of the impurity gases, including oxygen (O2), nitrogen (N2), carbon monoxide (CO), carbon dioxide (CO2), methane (CH4), ammonia (NH3), and hydrogen sulfide (H2S), reach sub-ppm- and ppb-levels at a total pressure of 0.1 and 2.5 MPa, respectively. This satisfies the detection requirements according to the maximum allowable concentration for these gases. Our cavity-enhanced Raman spectroscopy (CERS) apparatus can simultaneously measure multiple gases with high sensitivity and selectivity with no sample destruction. It has excellent application prospects in gaseous impurity analysis for the quality assessment of gaseous energy.

Investigation of carbon incorporation in laser-assisted MOCVD of GaN

Background carbon (C) impurity incorporation in metalorganic chemical vapor deposition (MOCVD) grown gallium nitride (GaN) represents one of the major issues in further improving GaN vertical power device performance. This work presents a laser-assisted MOCVD (LA-MOCVD) technique to address the high-C issue in MOCVD homoepitaxial GaN under different growth rate (Rg) regimes and studies the correlations between [C] and Rg. [C] in LA-MOCVD GaN is reduced by 50%–90% as compared to the conventional MOCVD GaN for a wide growth rate range between 1 and 16 μm/h. A mass-transport based model is developed to understand the C incorporation at different Rg regimes. The results obtained from the developed model are in good agreement with experimental data. The model further reveals that LA-MOCVD effectively suppresses C incorporation by reducing the active C species in the gas phase. Moreover, high step velocity in step flow growth mode can facilitate C incorporation at fast Rg, exhibiting steeper C increase. The theoretical model indicates that [C] can be suppressed below 1016 cm−3 with a fast growth rate (Rg) of 10 μm/h by utilizing higher power LA-MOCVD and freestanding GaN substrates with larger off-cut angles.

The influence of single carbon atom impurity on the electronic transport of (6, 3) two side-closed single-walled boron nitride nanotubes

In this study, the electronic transport of (6, 3) two side-closed single-walled boron nitride nanotubes ((6, 3) TSC-SWBNNTs) located between two electrodes of (5, 5) conductive carbon nanotubes is investigated.Introducing carbon impurities instead of nitrogen and boron atoms in different locations of two side-closed (6, 3) SWBNNTs would change the transmission spectrum and reduce the gap. As the bias voltage increases, the peaksof the transmission spectrum become sharper and narrower. Substituting carbon impurities instead of nitrogenatoms leads to larger currents than substituting carbon impurities instead of boron. For the carbon impurity insteadof N atoms, the current in the center is observed to be larger than currents on the left and right sides. In addition,negative resistance can be seen in current-voltage diagrams, which are used in the construction of high-speedelectronic switches in electrical circuits. Due to the larger number of atoms, the study of structures by the common approach is time-consuming and sometimes impossible. Hence, in this research, the Quantum ATK simulation software is used to investigate the characteristics of electronic transport. For this purpose, the Slater-Koster method and the tight-closure approximation are used. In this method, the non-equilibrium Green function (NEGF) approach is employed.