BZO Films Research Articles

Effect of Boron-doping and annealing on the structure, morphological and optical properties of ZnO films prepared by spray pyrolysis method

Abstract This study investigates the influence of boron doping from boric acid (H3BO3) on the structural, morphological, and optical properties of ZnO thin films deposited on glass substrates via spray pyrolysis at a deposition temperature of 250 °C. Subsequently, they undergo annealing in air at varying temperatures (200, 300, and 400 °C) for 45 min. The research reveals a significant dependence of all investigated properties on both annealing temperature and boron doping. Both pristine ZnO and boron-doped ZnO (BZO) films exhibit a polycrystalline hexagonal wurtzite structure. At the highest annealing temperature (400 °C), both films demonstrate high optical transmittance exceeding 70%, with crystallite diameters ranging from 25.8 to 28.5 nm for ZnO and 15.96 to 24.80 nm for BZO. Additionally, both films exhibit pronounced absorbance up to 400 nm. Scanning electron microscopy (SEM) analysis confirms a uniformly thick film surface. As the annealing temperature increases, the crystallite size grows, particle morphology evolves, and the overall film thickness increases. Fourier transform infrared (FTIR) spectroscopy validates the successful incorporation of boron atoms into the ZnO lattice structure. No contaminant peaks are observed in the FTIR spectra, indicating film purity. Furthermore, the study finds that BZO films possess a narrower optical band gap compared to pristine ZnO films. The band gap of the as-deposited and annealed BZO films is measured to be 3.04 eV and 2.9 eV, respectively, which is lower than the 3.23 eV band gap observed for the ZnO film. In general, the band gap exhibits a decreasing trend with increasing annealing temperature.

Synthesis of crystalline BaZrO3 thin films over preferred-oriented ZrN by a hydrothermal-galvanic couple method for photoelectrochemical evaluations

Crystalline barium zirconate (BaZrO 3 ; BZO) films which could be applied to photoelectrochemical cells and fuel cells were synthesized by a hydrothermal-galvanic couple (HT–GC) method using preferred-oriented ZrN thin-film electrodes. The HT–GC synthesis was carried out at 90°C in alkaline solutions. Substantial galvanic currents were detected without applying any external power sources throughout the synthesis. X-ray diffraction patterns reveal that BZO films with different crystallinities were achieved by such a facile synthesis. Moreover, the BZO films that grew on close-packed (200)-preferred oriented ZrN underlayer exhibited higher crystallinity and growth rates than on the (111)-preferred oriented ZrN. The obtained BZO films exhibited fast on-off photoelectrochemical responses while the BZO films with higher crystallinity over the (200)-ZrN possessed better photoelectrochemical responses. • Crystalline BaZrO3 films could be synthesized on ZrN by a hydrothermal-galvanic couple method • Crystallinity and photoelectrochemical performance of the films were tailored through ZrN • Galvanic effects were enhanced by using (200)-oriented ZrN rather than (111) oriented ZrN • Higher crystallinity of the films could be achieved by a more close-packed (200)-ZrN • Better and fast on-off photoelectrochemical responses of the films were obtained by (200)-ZrN

Effects of B2O3 doping on the crystalline structure and performance of DC-magnetron-sputtered, transparent ZnO thin films.

The transparent-conducting performance is estimated through figure-of-merit (FOM) value. To improve poor FOM value of pure ZnO thin films, boron (B) as a donor impurity was doped into the films. Direct-current magnetron sputtering was used to prepare B-doped ZnO (BZO) thin films from sintered ZnO targets with variable B2O3 content changing from 0 to 2 wt. %. The x ray diffraction analysis confirmed the preferably c-axis-oriented structure of hexagonal wurtzite ZnO host. The results also showed variation in the film structure versus the B2O3 content through calculations of crystal size and residual stress. Depending on the B2O3 content, a competition of interstitial and substitutional B3+ ions induced more stress or relaxation in lattice structure of the films. At 1% B2O3, the BZO thin film had the best crystalline characterization with the lowest stress and large crystal size. In consequence, the BZO 1% film obtained the lowest resistivity of 2.7×10-3Ωcm, average transmittance of 82.1%, and the best FOM value of 18.8×102Ω-1cm-1. The transparent-conducting performance of the ZnO thin films deposited by direct-current (DC) magnetron sputtering was significantly enhanced through B doping. The good-performance BZO film at 1% B2O3 is believed to be of use as electrodes in thin-film solar cells.

Influence of boron doping amount on properties of ZnO:B films grown by LPCVD technique and its correlation to a-Si:H/μc-Si:H tandem solar cells

Boron-doped ZnO:B (BZO) films with various doping levels have been prepared on large-area substrates by low pressured chemical vapor deposition technique. The influence of doping amount on electrical and optical properties of BZO films has been investigated. It is found that ZnO phase synthesis is hardly affected when the doping gas flow varies from 25 to 100 sccm, but the preferential orientation of grain growth is influenced progressively. It is interesting that there should be a threshold value of doping gas flow of 75 sccm that will cause an abrupt reduction in grain size of BZO and therefore dramatically weakens the light-scattering capacity of the film. It is also noted that the boron atoms doped in BZO films are partly electrically active, and moreover, the heavier doping level, the more inactive B atoms, which not only reduces carrier mobility, but also boosts a stronger light absorption due to enhanced impurity scattering. When the doping gas flow is 75 sccm, the BZO film can achieve a proper comprehensive property with a Rsq of 15.2 Ω/□, an average haze of 21.3% and an average TT of 80.2%. Using this film as the front electrode of a-Si:H/μc-Si:H solar cell, the optimum performance of the solar cell with a Jsc of 12.68 mA/cm2, a Voc of 1.385 mV, and an initial efficiency (η) of 11.83% was obtained.

Hydrogen annealed ZnO:B film grown by LPCVD technique as TCO for enhancing conversion efficiency of a-Si:H/μc-Si:H tandem solar cells

The ZnO:B (BZO) films with different boron doping levels have been prepared by low pressure chemical vapor deposition (LPCVD) technique. The electrical and optical properties of the BZO films have been systematically investigated through a post annealing treatment in hydrogen atmosphere, as well as in vacuum for comparison. It is found that conductivity of BZO films, especially with a low boron doping level, can be enhanced significantly after annealing in hydrogen, and moreover, the total transmittance (TT) and haze factor of the H2-annealed BZO films were still almost unchanged simultaneously, which were attributed to phenomena of an increase in carrier mobility with an almost constant of free carrier concentration. The conversion efficiency of a-Si:H/μc-Si:H tandem solar cell incorporating H2-annealed lowly doped BZO film as front electrode was confirmed to be improved remarkably by 1.10% due to the enhancement of TT and haze factor, as compared to that using an as-grown heavily doped BZO film as front electrode. The results indicate that H2-annealing is a quite attractive and alternative technique to optimize properties of BZO film as TCO for further enhancing conversion efficiency of a-Si:H/μc-Si:H tandem solar cells.

Influence of Er doping on the structural, optical and luminescence properties of pulsed laser deposited Er: BaZrO3 thin films

Abstract Pure and erbium doped (1, 2, 3 and 5 at%) Barium zirconate (BZE) thin films have been deposited on Si (0 0 1) substrate via pulsed laser deposition using 100 mJ Nd: YAG laser operated at second harmonics (532 nm). Er doping significantly affects the surface morphology, microstructure and optical properties of grown thin films. All the films exhibit cubic BaZrO 3 structure and are polycrystalline in nature as extracted from XRD data. The optical band gap energies (3.75–3.63 eV) of doped (1, 2, 3, and 5 at%) BZE thin films are found to be less than that of pure BZO film (4.03 eV). PL spectra, excited at 328 nm, mainly consist of violet-blue (412 nm) and green (523–543 nm) emissions for all the doped films. The green emission increases with the increase in Er doping upto 3 at% and then concentration quenching effect appears at 5 at%. It is noted that the relative intensity of PL emission and the optical band gap can be tuned by varying Er concentration to alter the properties of the phosphor. The emission peaks in photoluminescence spectra makes the Er: BZO films potential candidates to be used in optoelectronic devices such as light emitting diodes (LEDs).

Crystallization Behavior and Properties of B-Doped ZnO Thin Films Prepared by Sol-Gel Method with Different Pyrolysis Temperatures

Boron-doped zinc oxide transparent (BZO) films were prepared by sol-gel method. The effect of pyrolysis temperature on the crystallization behavior and properties was systematically investigated. XRD patterns revealed that the BZO films had wurtzite structure with a preferential growth orientation along the c-axis. With the increase of pyrolysis temperature, the particle size and surface roughness of the BZO films increased, suggesting that pyrolysis temperature is the critical factor for determining the crystallization behavior of the BZO films. Moreover, the carrier concentration and the carrier mobility increased with increasing the pyrolysis temperature, and the mean transmittance for every film is over 90% in the visible range.

Synthesis and formation mechanisms of BaZrO3 thin films prepared on ZrN-coated substrates by a low temperature hydrothermal–galvanic couple method

Barium zirconate (BaZrO3; BZO) films exhibiting superior physical and chemical properties were synthesized over ZrN-coated Si substrates by a low temperature hydrothermal–galvanic couple method. Firstly, ZrN thin films were deposited onto Si by unbalanced magnetron sputtering. Subsequently, the ZrN-coated Si substrates were soaked in 0.5M Ba(OH)2 mixed with various molar concentrations of NaOH at 90°C for different reaction times by aid of a galvanic couple setup. Although no external power sources were applied, pronounced galvanic currents were detected during the synthesis and revealed a very different plateau behavior. X-ray diffraction patterns show that cubic crystalline BZO films were formed on ZrN/Si in highly alkaline solutions for sufficient reaction time. Amorphous nano-layered oxides were present at lower-pH solutions. Aided by galvanic effects, more OH− ions in the solution and longer reaction time would facilitate formation of a dense crystalline BZO. Reaction routes and formation mechanisms of the BZO films have been proposed.

UV micro-imprint patterning for tunable light trapping in p-i-n thin-film silicon solar cells

In this paper, we used UV micro-imprint lithography periodic patterning combined with self-textured BZO films with a wide range of texture distributions for light trapping in thin-film silicon solar cells. It was found that the feature size of the periodic textures has a significant influence on the light trapping capacity of the glass substrate and the external quantum efficiency (EQE) of microcrystalline silicon (μc-Si:H) solar cells. Microcrystalline silicon solar cells, deposited on periodic textures of 5μm, showed an improved photocurrent density without any loss in the open-circuit voltage and fill factor; hence, resulting in an overall efficiency increase of 6.28%.

Disappearance of ferroelectric critical thickness in epitaxial ultrathinBaZrO3films

The intrinsic critical ferroelectric thickness of epitaxial ultrathin capacitors of incipient ferroelectric $\mathrm{BaZr}{\mathrm{O}}_{3}$ (BZO) films with realistic $\mathrm{SrRu}{\mathrm{O}}_{3}$ (SRO) electrodes is investigated by first-principles calculations based on density functional theory. We reveal that polarization can stably exist even in one-unit-cell thick BZO films, i.e., absence of critical thickness, whereas the widely investigated proper ferroelectrics like $\mathrm{BaTi}{\mathrm{O}}_{3}$ and $\mathrm{SrTi}{\mathrm{O}}_{3}$ films have no polarization. The influences of realistic ferroelectric-electrode interface and misfit strain on the ionic and electronic structures of the BZO-SRO thin film system have been examined under the short-circuited boundary condition. It is found that the ionic polarization of conductive SRO electrodes can effectively strengthen the screening of bound charges at the interface, which greatly reduces the depolarization field in the BZO films. Furthermore, the epitaxial misfit strain remarkably enhances the polarization through the enhancement of hybridization of $\mathrm{Zr}$ and $\mathrm{O}$ electron orbitals, resulting in the disappearance of ferroelectric critical thickness. Our findings are beyond the critical thickness of proper ferroelectrics and are thus promising for future nanometer-scale ferroelectric device such as high-density ferroelectric memory.

H2–CH4 mixed gas plasma treatment on LP-MOCVD ZnO:B for amorphous silicon thin film solar cells

We present an innovative dry etching method to modify the surface of in-house ZnO:B (BZO) films deposited by the LP-MOCVD technique. With the optimized hydrogen and methane mixed gas plasma post treatment process, we obtain a novel surface texture that constitutes of pyramids with enlarged feature size (>1μm) and shrunken feature size (<0.2μm), which can improve the light trapping capability both in short and long wavelength region. In addition, we also discuss the evolution of optical and electrical properties of BZO films with etching time. When those etched BZO films are used as front contacts in a-Si:H solar cells, the recovery of open circuit voltage and fill factor can be ascribed to the soft sharp edges of the new pyramids texture. The conversion efficiency of single a-Si:H solar cells can reach up to 6.2% for an absorber layer thickness only around 140nm.

Influence of the kind and content of doped impurities on impurity-doped ZnO transparent electrode applications in thin-film solar cells

The influence of the kind and content of doped impurity on the electrical properties and their stability as well as on the light scattering characteristics and the surface texture formation obtainable by wet-chemical etching was investigated to develop transparent conducting impurity-doped ZnO thin films suitable for transparent electrode applications in thin-film solar cells. Al-, B- and Ga-doped ZnO (AZO, BZO and GZO) thin films were prepared on glass substrates at 200°C by doping each impurity at an appropriate content to achieve lower resistivity using a pulsed laser deposition and by varying the doped Al or Ga impurity content using r.f. superimposed d.c. magnetron sputtering deposition. The difference in the resulting electrical properties and their stability (air at 85% relative humidity and 85°C) among the AZO, BZO and GZO thin films is attributed to the content of each impurity rather than the kind of impurity. In evaluations of the light scattering characteristics and the surface texture formation in a 0.1% HCl solution at 25°C, the difference in the haze value obtainable among the AZO, BZO and GZO thin films is mainly attributed to the content of each impurity doped into the films. The AZO, BZO and GZO films prepared with doped impurity contents below approximately 2at.% are suitable for transparent electrode applications in thin-film solar cells, irrespective of the kind of impurity as well as the deposition method used.

Impurity-doped ZnO Thin Films Prepared by Physical Deposition Methods Appropriate for Transparent Electrode Applications in Thin-film Solar Cells

This paper describes the development of transparent conducting impurity-doped ZnO thin films that would be appropriate for applications as transparent electrodes in thin-film solar cells. Transparent conducting Al-, B- and Ga-doped ZnO (AZO, BZO and GZO) thin films were prepared in a thickness range from 500 to 2000 nm on glass substrates at 200°C using various physical deposition methods: BZO films with vacuum arc plasma evaporation, AZO and GZO films with different types of magnetron sputtering depositions (MSDs) and all films with pulsed laser deposition (PLD). The suitability and stability of the electrical properties and, in addition, the suitability of the light scattering characteristics and surface texture formation were investigated in the prepared thin films. In particular, the suitability and stability evaluation was focused on the use of AZO, BZO and GZO thin films prepared by doping each impurity at an appropriate content to attain the lowest resistivity. The higher Hall mobility obtained in impurity-doped ZnO thin films with a resistivity on the order of 10−4 Ωcm was related more to the content, i.e., the obtained carrier concentration, rather than the kind of impurity doped into the films. The stability of resistivity of the BZO thin films in long-term moisture-resistance tests (in air at 85% relative humidity and 85°C) was found to be lower than that of the AZO and GZO thin films. The surface texture formation was carried out by wet-chemical etching (in a 0.1% HCl solution at 25°C) conducted either before or after being heat-treated either with rapid thermal annealing (RTA) or without RTA. The suitability of the light scattering characteristics and the surface texture formation obtainable by wet-chemical etching (for use in transparent electrode applications) was considerably dependent on the deposition method used as well as whether the wet-chemical etching was conducted with or without RTA. A significant improvement of both transmittance and haze value at wavelengths up to about 1200 nm in the near-infrared region was attained in surface-textured AZO films that were prepared by r.f. power superimposed d.c. MSD as well as etched after being heat treated with RTA at 500°C for 5 min in air. The obtained suitability and stability in impurity-doped ZnO thin films were related more to the content rather than the kind of impurity doped into the films as well as to the deposition method used.

Mixed pinning landscape in nanoparticle-introduced YGdBa2Cu3Oyfilms grown by metal organic deposition

We study the field (H) and temperature ($T$) dependence of the critical current density (${J}_{c}$) and irreversibility field (${H}_{\mathrm{irr}}$) at different field orientations in ${\mathrm{Y}}_{0.77}$Gd${}_{0.23}$Ba${}_{2}$Cu${}_{3}$O${}_{y}$ with randomly distributed BaZrO${}_{3}$ nanoparticles (YGdBCO$+$BZO) and YBa${}_{2}$Cu${}_{3}$O${}_{y}$ (YBCO) films. Both MOD films have large RE${}_{2}$Cu${}_{2}$O${}_{5}$ (225) nanoparticles (\ensuremath{\sim}80 nm in diameter) and a high density of twin boundaries (TB). In addition, YGdBCO$+$BZO films have a high density of BZO nanoparticles (\ensuremath{\sim}25 nm in diameter). At high temperatures ($T$ g 40 K), the superconducting properties, such as ${J}_{c}$, ${H}_{\mathrm{irr}}$, and flux creep rates, are greatly affected by the BZO nanoparticles, while at low temperatures the superconducting properties of both the YBCO and YGdBCO$+$BZO films show similar field and temperature dependencies. In particular, while the ${J}_{c}$ of YBCO films follow a power-law dependence ($\ensuremath{\propto}{H}^{\ensuremath{-}\ensuremath{\alpha}}$) at all measured $T$, this dependence is only followed at low $T$ for YGdBCO$+$BZO films. As a function of $T$, the YGdBCO$+$BZO film shows ${J}_{c}(T,0.01T)~[1\ensuremath{-}(T/{T}_{c}){}^{2}]{}^{n}$ with $n$ \ensuremath{\sim} 1.24 \ifmmode\pm\else\textpm\fi{} 0.05, which points to ``$\ensuremath{\delta}{T}_{c}$ pinning.'' We analyze the role of different types of defects in the different temperature regimes and find that the strong pinning of the BZO nanoparticles yields a higher ${H}_{\mathrm{irr}}$ and improved ${J}_{c}$ along the $c$ axis and at intermediate orientations at high $T$. The mixed pinning landscapes due to the presence of disorder of various dimensionalities have an important role in the improvement of in-field properties.

Advanced light trapping materials: Double layer ZnO:B based transparent conductive oxide

We present double layer structures consisting of ZnO:B/ZnO:B (BZO) and In 2O 3:Mo (IMO)/BZO films. The structure offers the unique opportunity of separating the conductivity of transparent conductive oxides from their light scattering behavior and allows their optimization for use in thin film solar cells. The layers serve as carrier transport and light trapping layers, respectively. BZO films were prepared by mid-frequency magnetic sputtering from a ZnO:B 2O 3 ceramic target. In order to enhance the conductivity of the BZO films, hydrogen was introduced into the sputtering atmosphere. Introducing hydrogen increased the mobility of the BZO-based double layer films to near 30 cm 2/V•s. Efficient scattering was achieved by etching the film in dilute hydrochloric acid. IMO films were also tested as the transport layer. An unconventional surface morphology was obtained by etching the IMO/BZO double layer film. Using this cascading multilayer structure IMO/BZO film as the front contact in a-Si:H solar cell, 20.4% and 7.4% enhancements in short circuit current density were obtained compared to smooth IMO films and textured single layer BZO films.

Vapor-Liquid-Solid 成長を用いて作製した人工ピン導入 REBa2Cu3O7&amp;minus;y 膜の微細組織

In order to improve a critical current density under applied magnetic fields, an addition of BaMO3 (BMO; M=Zr, Sn) nanorods into REBa2Cu3Oy (REBCO) films is actively discussed. Although superconducting properties of the REBCO films are dramatically enhanced by self-assembled BMO nanorods, the growth mechanisms of the BMO nanorods have not been clarified yet. In this study, in order to clarify the growth mechanisms of the BZrO3 (BZO) nanorods and to further improve the superconducting properties, we fabricated a BZO-doped Sm1+xBa2−xCu3Oy (Sm+BZO) film by using modified Vapor-Liquid-Solid (VLS) technique (VLS-Sm+BZO/i). From the surface morphologies, there are BZO particles grown at step in the spiral growth measured by Br-etched VLS films doped with BZO. In general the impurity-related phase was pinning of growth fronts on REBCO films on substrate. Thus, we can conclude the variation of the surface morphology in VLS films is explained, not by the difference the step energy, but impurity phase could be responsible for the pinning and bending of different growth fronts, resulting in the formation of screw dislocations. From the plan-view TEM images, VLS-SmBCO+BZO film is approximately 9 nm in diameter of BZO nanorods, whereas VLS-SmBCO+BZO/i film is 7-8 nm. To create the BZO nano island/dots on the seed layer introduced the increase of the density of BZO nanorods. From the cross-sectional TEM images, columns of BZO nanorods aligned along [001] or the c-axis of SmBCO are clearly seen in the VLS films. Columnar BZO structures growing from the substrate to the surface have been observed. Nano BZO particles grown on the seed layer remained after the VLS growth. Nano BZO rods separated by 5 nm SmBCO spacer layers are shown to exhibit self-organized growth along c-axis of SmBCO.

Synthesis of epitaxial BaZrO 3 thin films by chemical solution deposition

This work reports on the low temperature preparation and characterization of BaZrO 3 (BZO) epitaxial thin films by chemical solution deposition (CSD). The X-ray θ–2 θ scan and φ-scan measurements have demonstrated that the BZO films exhibit cube-on-cube epitaxy on (100) MgO substrates, with the full width at half maximum (FWHM) for the ω-scan and φ-scan of 0.35° and 0.46°, respectively. The SEM and AFM analyses revealed that the morphology of the films is strongly correlated with annealing temperature. The root mean square roughness for the film annealed at 600 °C is 3.63 nm, while for the film grown at 1000 °C is 5.25 nm.

Crystal growth mechanism of VLS-Sm 1+xBa 2−xCu 3O y films including self-assembled BaZrO 3 nanorods

In order to improve a critical current density ( J c) under applied magnetic fields, an addition of BaMO 3 (BMO; M = Zr, Sn) nanorods into REBa 2Cu 3O y (REBCO) films is actively discussed. Although superconducting properties of the REBCO films are dramatically enhanced by self-assembled BMO nanorods, the growth mechanisms of the BMO nanorods have not been clarified yet. In this study, in order to clarify the growth mechanisms of the BZrO 3 (BZO) nanorods and to further improve the superconducting properties, we fabricated a BZO-doped Sm 1+ x Ba 2− x Cu 3O y (Sm+BZO) film by using modified Vapor–Liquid–Solid (VLS) technique (VLS-Sm+BZO/i). The in-field J c of the VLS-Sm+BZO/i film showed 4.5 times higher than that of Sm+BZO film fabricated by conventional pulsed laser deposition method (PLD-Sm+BZO) at B = 4 T and the J c– B– θ curves of the VLS-Sm+BZO/i film was higher than that of the PLD-Sm+BZO film around the applied field angle of 40° against the c-axis of the SmBCO. From a TEM observation, we found that the BZO nanorods of VLS-Sm+BZO/i film grew discontinuously along the c-axis of the SmBCO.

Structural and optical properties of Be-doped ZnO nanocrystalline films by pulsed laser deposition

The heteroepitaxial Be x Zn 1 − x O( x = 0.4) (BZO) thin films were deposited on sapphire ( c-Al 2O 3) substrates by pulsed laser deposition (PLD). BZO targets were synthesized using a traditional solid-reaction method. BZO films were deposited at a various substrate temperatures with a fixed P(O 2) = 26 Pa, and the thickness of the films are estimated to be about 200 nm. Based on the x-ray diffraction analysis, BZO thin films deposited at T sub. = 550–700 °C exhibit c-axis preferred growth. BZO films deposited at 600 and 650 °C exhibit sharp absorption edges around 400 nm measured at room temperature. The optical energy gap obtained from the transmittance spectra is about 3.43–3.64 eV, which demonstrates a possibility of the band gap engineering with a BeO–ZnO alloy using a PLD method with a single BZO target. It has been found that the crystallinity as well as the band gap of BZO films is strongly influenced by the deposition temperature.

Preparation of BaZrO 3 films by physical vapor deposition and a novel hydrothermal duplex technique

Dielectric barium zirconate (BaZrO 3, BZO) films were prepared by physical vapor deposition and a novel hydrothermal duplex technique. Zirconium nitride films were first deposited on Si substrates by hollow cathode discharge plasma ion plating (HCD-IP). Subsequently, the ZrN-coated Si specimens were soaked in Ba(CH 3COO) 2 and NaOH mixed alkaline solutions with a galvanic couple setup in the temperatures range of 55−95 °C for 1−24 h. X-ray diffraction results confirmed that cubic BZO films were successfully prepared on ZrN/Si. The growth rate of BZO films on ZrN is much faster than that on bulk-Zr. The crystallinity, lattice parameter, and relative peak intensities were determined. Moreover, the morphology of the obtained BZO films was investigated by field-emission scanning electron microscopy. The BZO films exhibited a nanolayered structure and the thickness could reach about 2 μm after 15 h in the solution at 90 °C. The dependence of the film morphology and thickness on the reaction temperature and the time in the solution is discussed.