Buried SiC layers were formed by using a metal vapor vacuum arc (MEVVA) ion source,with C+ ions implanted into Si substrates under different doses.In the present study, the extracted voltage was 50kV and the ion dose was varied from 3.0×1017—1.6×1018cm-2.According to infrared absorption measurements,it was found that the structure of the buried SiC layers depended on the ion dose.Moreover,the results also demonstrated that the buried SiC layers including cubic crystalline SiC could be synthesized at an averaged substrate temperature of lower than 400℃ with the MEVVA ion source.