Abstract
Carbon implantation into Si at a temperature of 950 °C and at doses in the range of 0.2×1018 to 1×1018 cm−2 at 200 keV results in the formation of β-SiC buried layers having the same orientation as the Si matrix. Under these conditions redistribution of the implanted species occurs enabling the formation of a buried layer of β-SiC with an overlayer of high quality single crystal Si which is free of structural defects. The quality of the Si overlayer and the β-SiC buried layer was investigated by Rutherford backscattering and transmission electron microscopy. A mechanism for the formation of the β-SiC without the generation of defects in the Si matrix is proposed.
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