Abstract

Ion beam synthesis has been successfully employed to produce a buried silicon nitride layer in silicon carbide. The elemental distributions, compositional and structural variations in the implanted samples have been studied using a combination of secondary ion mass spectrometry (SIMS), Rutherford backscattering spectrometry (RBS) and transmission electron microscopy (TEM). The studies revealed that the buried layer is composed of α-Si3N4 nanocrystallites after implantation at 650°C and 1100°C. It was found that the deviation from perfect crystallinity of the SiC layer above the buried nitride layer is less than 8%.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call