Abstract
We demonstrate the feasibility of SOI (Silicon-on-Insulator) substrates with silicon nitride Si3N4 and silicon dioxide SiO2 based buried composite stack. The SOI substrates with different oxide thicknesses were fabricated using the Smart Cut{trade mark, serif} technology. We provide the preliminary Pseudo-MOSFET characterization as well as an electrostatic model. The electrical charges present in the buried silicon nitride layer are responsible for threshold voltage, flat-band voltage and mobility variations. Numerical simulations and experimental results confirm that the electrostatic properties of SOI substrates can be easily tuned by varying the thickness of the oxide layer located above the buried nitride layer.
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