Buffer Layer Research Articles

Degradation of MoOx Thin‐Films Properties in Excessive Oxygen Environments and Its Influence on Dopant‐Free Silicon Solar Cells

Transition metal oxides such as molybdenum oxide (MoOx) demonstrate significant potential as efficient hole‐selective passivating contacts in silicon heterojunction solar cells. Achieving efficient hole collection necessitates precise control over the optical and electrical properties of MoOx films. In this study, the effects of oxygen flow rate () on the growth, optical properties, and electrical properties of thermally evaporated MoOx films are investigated. In the Kelvin probe force microscopy results, it is indicated that MoOx thin‐film deposition followed an island‐to‐layer growth model. X‐ray photoelectron spectroscopy shows that MoOx films exhibit stoichiometric composition with fully oxidized Mo6+ ions, without additional oxygen. Notably, the O 1s orbital peak shifts toward higher binding energy with increased , indicating defect introduction. Consequently, the work function of MoOx films decreases from 5.93 to 5.51 eV as increases from 0 to 8 sccm. The maximum optical bandgap of the MoOx films exceeds 3.60 eV. As a proof of concept, 's impact on MoOx as a front buffer layer for dopant‐free silicon solar cells is analyzed. An efficiency of 20.8% was achieved for dopant‐free silicon solar cells after optimized MoOx film deposition, with an open‐circuit voltage of 713.7 mV, short‐circuit current density of 39.1 mA cm−2, and fill factor of 74.6%.

An Overview of Electron Transport Layer Materials and Structures for Efficient Organic Photovoltaic Cells

The electron transport layer (ETL) has gained significant attention recently for its essential role in facilitating charge extraction, transportation, and reducing recombination in photovoltaic cells. Organic photovoltaics (OPVs) with ETLs have achieved remarkable efficiencies exceeding 19%, and indoor OPVs have reached a peak efficiency of 29.4% under 3000 LX illumination. Despite these accomplishments, the difficulties in choosing appropriate ETLs for contact alignment have constrained device performance. This review comprehensively overviews the latest advancements in ETL materials used in conventional and inverted OPVs. Additionally, it investigates the evolution of dopant materials, emphasizing the need for improved electron mobility, energy level alignment, and surface passivation treatment of the buffer layer and absorber layers in OPVs. Continual studies of transport materials and the potential utilization of doping or multilayer ETLs are suggested as inevitable research toward achieving higher power conversion efficiency and stability in OPV technology. Additionally, identifying optimal ETL materials capable of synergistic interactions remains crucial for sustained progress in renewable energy technology.

Simultaneous engineering of the conductivity and work function of biphenylene via fluorine adsorption

Biphenylene (BP) is a new member of the two-dimensional C nanomaterial family, and successful fabrication of BP offers an excellent opportunity for developing innovative C-based electronics. However, its unusual metallicity critically restricts its applications in field-effect transistors (FETs) and photocatalysis. Simultaneously, its relatively low work function (ϕ, 4.33 eV) seriously restricts its applications in anode materials of electronic devices. Therefore, understanding the tunabilities of electronic properties and ϕ of BP-based nanomaterials is crucial to guide experimental exploration; nevertheless, to date, little attention has been paid to this area. Herein, we theoretically demonstrate that conductivity of fluorinated BP (Fn-BP) evolves in the order metallic → semimetallic → semiconductivity with increasing F concentration, attributed to a bonding transition of BP (sp2 → sp2 + sp3 → sp3). Particularly, ϕ of BP can be significantly improved (4.82–6.97 eV) by fluorination, approximately two-fold higher than that of Fn-graphene owing to p electron transfer between F and BP. Consequently, metallic F2D-BP and semimetallic F4S-BP with favorable ϕs can be utilized as substitutes for Au and Pt anodes, respectively. Specifically, F8D-BP, F16D-BP, and F24D-BP with exceptional band gaps of 0.40, 2.80, and 3.44 eV, respectively, exhibit high potentials for making channel materials in FETs, candidate materials in photocatalysis, and buffer layers in solar cells, respectively.

Enlargement of effective area in Schottky barrier diodes on heteroepitaxial (001) diamond substrates by defect reduction and their radiation tolerance

A major obstacle to realizing diamond electronics is the presence of device-killing defects. Characteristics of diamond-based diodes are degraded with increasing contact size, and a large Ohmic-like leakage current can be generated. Here, we introduced a buffer layer to suppress the killer defects, which extended from the substrate to the epitaxial layer. With the utilization of the buffer layer created using the metal-assisted termination (MAT) technique, Schottky barrier diodes (SBDs) with diametric sizes of Schottky contact ranging from 65 to 1000 μm were fabricated on heteroepitaxial-grown diamond (001) substrates. The SBDs exhibited an explicit rectifying behavior with a rectification ratio of >1010 even with 1000 μm circular contact (7.85 × 10−3 cm2). Satisfying diode parameters were obtained with an ideality factor of 1.52, a Schottky barrier height of 1.66 eV, and a picoampere of leakage current at a reverse bias of 10 V. Interestingly, the diode parameters of the diamond-based SBDs such as ideality factor, Schottky barrier height and rectifying ratio were likely not changed or degraded even after absorption to 1 MGy in the dose of white X-ray. Overall, this demonstration indicates a promising way to realize a large active area of diamond electronics that is applicable to high-output power transmission devices and detector applications.

Boosting Solar Water Splitting Performance of Cu3BiS3‐Based Photocathode via Ag Doping Strategy

AbstractA photovoltaic wittichenite semiconductor of Cu3BiS3, due to its optimal bandgap, high light absorption coefficient, and various advantages of low cost and environmental‐friendliness, has been considered a competitive candidate for solar absorber materials of photocathode for photoelectrochemical water splitting. However, the presence of various deleterious defects in the Cu3BiS3 lattice and its high conduction band minimum are detrimental factors that restrict further enhancements in the conversion efficiency of Cu3BiS3‐based photocathode. Herein, a one‐step solution‐based Ag element doping strategy is proposed to improve the crystalline quality of Cu3BiS3 films, which includes enlarging the grain size and reducing the intergranular gaps. Additionally, the Ag‐doped Cu3BiS3 layer can form a more favorable band alignment with the buffer layer. Ultimately, the fabricated composite Cu3BiS3‐based photocathode doped with 3% Ag delivers a remarkable photocurrent density of 13.6 mA cm−2 under 0 VRHE, an applied bias photon‐to‐current efficiency of 2.85%, and long‐term stability exceeding 12 h. Furthermore, with the assistance of a BiVO4 photoanode, the tandem cell also achieves an unbiased solar‐to‐hydrogen efficiency of 2.64%, with no significant decline observed within 20 h.

Enhancing the Efficiency and Stability of Inverted Formamidinium-Cesium Lead-Triiodide Perovskite Solar Cells through Lewis Base Pretreatment of Buried Interfaces.

Mixed components of formamidinium(FA) and cesium (Cs)-based perovskite solar cells are the most hopeful for commercialization owing to their excellent operational and phase stabilities, especially for devices with inverted structure. The nonradiative recombination of carriers can be effectively suppressed through interface optimization, therefore, the performance of devices can be improved. Notably, the buried interface emerges as critical aspects such as charge transport, charge recombination kinetics, and morphology of perovskite films. This study focuses on a straightforward yet effective approach to overcome buried interface challenges between organic polymers (poly(-triarylamine) (PTAA) and FACs-based perovskite films. The PTAA substrate is pretreated with a Lewis base known as 2-butynoic acid (BA) with a C═O functional group. First, it can be an interfacial buffering layer, harmonizing stress mismatch between the perovskite and PTAA layers, consequently optimizing crystallization and improving perovskite film quality. Second, Pb2+ defect can be passivated at the buried interface of the perovskite film through binding with the C═O group of the BA molecule. This dual-function strategy leads to a substantial enhancement in both photoelectric conversion efficiency (PCE) and stability of devices. Finally, the PCE of the device-modified buried interface with BA reaches an impressive 23.33%. Furthermore, unencapsulated devices with BA treatment maintain approximately 94% of their initial efficiency after aging at maximum power point tracking for 1000 h.

Improved Ga2O3 films on variously oriented Si substrates with Al2O3 or HfO2 buffer layer via atomic layer deposition

Ga2O3 is an ultrawide-band-gap semiconductor with excellent properties and promising applications in the electronic and optoelectronics. For acting as the substrate for heteroepitaxial Ga2O3 films, Si has the advantages of wafer-level size, cheap price and nice compatibility whereas also perform the disadvantage of large thermal mismatch. In this paper, the apparent flower-like defects are exhibited on the macroscopic surfaces of annealed Ga2O3 films deposited on (100), (110) and (111) oriented Si substrates by atomic layer deposition (ALD) method. The reason is ascribed to the different thermal expansion coefficients between Ga2O3 and Si induced compressive and tensile stresses. The Al2O3 or HfO2 buffer layer intercalated between Ga2O3 films and Si substrates via successive ALD process suppress the flower-like defects effectively while the surface roughnesses are low to be 1.290 nm and 2.393 nm, respectively. XRD spectra demonstrate that buffer layer indeed relieves the stress of Ga2O3 films on Si substrates while the amorphous Al2O3 has better influence than the polycrystalline HfO2. The results are helpful to the improvement of growth quality and device property of Ga2O3.

Characterization of the TCO Layer on a Glass Surface for PV IInd and IIIrd Generation Applications

In the dynamic field of photovoltaic technology, the pursuit of efficiency and sustainability has led to continuous novelty, shaping the landscape of solar energy solutions. One of the key elements affecting the efficiency of photovoltaic cells of IInd and IIIrd generation is the presence of transparent conductive oxide (TCO) layers, which are key elements impacting the efficiency and durability of solar panels, especially for DSSC, CdTe, CIGS (copper indium gallium diselenide) or organic, perovskite and quantum dots. TCO with low electrical resistance, high mobility, and high transmittance in the VIS–NIR region is particularly important in DSSC, CIGS, and CdTe solar cells, working as a window and electron transporting layer. This layer must form an ohmic contact with the adjacent layers, typically the buffer layer (such as CdS or ZnS), to ensure efficient charge collection Furthermore it ensures protection against oxidation and moisture, which is especially important when transporting the active cell structure to further process steps such as lamination, which ensures the final seal. Transparent conductive oxide layers, which typically consist of materials such as indium tin oxide (ITO) or alternatives such as fluorine-doped tin oxide (FTO), serve dual purposes in photovoltaic applications. Primarily located as the topmost layer of solar cells, TCOs play a key role in transmitting sunlight while facilitating the efficient collection and transport of generated electrical charges. This complex balance between transparency and conductivity highlights the strategic importance of TCO layers in maximizing the performance and durability of photovoltaic systems. As the global demand for clean energy increases and the photovoltaic industry rapidly develops, understanding the differential contribution of TCO layers becomes particularly important in the context of using PV modules as building-integrated elements (BIPV). The use of transparent or semi-transparent modules allows the use of building glazing, including windows and skylights. In addition, considering the dominant position of the Asian market in the production of cells and modules based on silicon, the European market is intensifying work aimed at finding a competitive PV technology. In this context, thin-film, organic modules may prove competitive. For this purpose, in this work, we focused on the electrical parameters of two different thicknesses of a transparent FTO layer. First, the influence of the FTO layer thickness on the transmittance over a wide range was verified. Next, the chemical composition was determined, and key electrical parameters, including carrier mobility, resistivity, and the Hall coefficient, were determined.

Mitigating Delamination in Perovskite/Silicon Tandem Solar Modules

As perovskite/silicon tandem solar cells head toward industrialization, one emerging challenge relates to the mechanical reliability of these organic–inorganic multilayer devices. Herein, the fracture toughness and interfacial strength of monolithic p–i–n perovskite/silicon tandems are assessed in the context of module integration. While the weakest layer in the tandem stack investigated is found to be C60, used here as electron‐transport layer (interfacial tensile strength of 0.64 MPa), more concerningly, the fracture energy of the C60/tin‐oxide interface is found to be only 1.2 J m−2. The low fracture toughness of perovskite/silicon tandems can encourage crack propagation and large‐scale delamination during processes used for their integration into modules such as cell cutting, interconnection, and vacuum lamination. By improving the tin oxide buffer layer properties and reducing sputtering‐induced internal stress (associated with the transparent top electrode deposition onto the tin the oxide buffer layer), the fracture energy is improved to over 160 J m−2. A second strategy to mitigate delamination due to the low fracture toughness of the cells is tailoring encapsulation and cell processing techniques specifically toward the perovskite/silicon tandem technology. In this work, a critical reliability issue, relevant for any perovskite‐based optoelectronic technology requiring device packaging, is addressed.

Dual-Band Photomultiplication-Type Organic Photodetectors with Ultrahigh Signal-to-Noise Ratios.

A series of dual-band photomultiplication (PM)-type organic photodetectors (OPDs) were fabricated by employing a donor(s)/acceptor (100:1, wt/wt) mixed layer and an ultrathin Y6 layer as the active layers, as well as by using PNDIT-F3N as an interfacial layer near the indium tin oxide (ITO) electrode. The dual-band PM-type OPDs exhibit the response range of 330-650 nm under forward bias and the response range of 650-850 nm under reverse bias. The tunable spectral response range of dual-band PM-type OPDs under forward or reverse bias can be explained well from the trapped electron distribution near the electrodes. The dark current density (JD) of the dual-band PM-type OPDs can be efficiently suppressed by employing PNDIT-F3N as the anode interfacial layer and the special active layers with hole-only transport characteristics. The light current density (JL) of the dual-band PM-type OPDs can be slightly increased by incorporating wide-bandgap polymer P-TPDs with relatively large hole mobility (μh) in the active layers. The signal-to-noise ratios of the optimized dual-band PM-type OPDs reach 100,980 under -50 V bias and white light illumination with an intensity of 1.0 mW·cm-2, benefiting from the ultralow JD by employing wide-bandgap PNDIT-F3N as the anode interfacial buffer layer and the increased JL by incorporating appropriate P-TPD in the active layers.

Engineering Oxide Epitaxy beyond Substrate Constraint.

Orientation engineering is a crucial aspect of thin film growth, and it is rather challenging to engineer film epitaxy beyond the substrate constraint. Guided by density functional theory calculations, we use SrRuO3 (SRO) as a buffer layer and successfully deposit [111]-oriented CoFe2O4 (CFO) on [001]-, [110]-, and [111]-oriented SrTiO3 (STO) substrates. This enables subsequent growth of [111]-oriented functional oxides, such as PbTiO3 (PTO), overcoming the constraint of the substrate. This strategy is quite general and applicable to lanthanum aluminate and yttria-stabilized zirconia substrates as well. X-ray Φ scans and atomic resolution aberration-corrected scanning transmission electron microscopy (AC-STEM) reveal detailed epitaxial relations in each of the cases, with four variants of [111]-CFO found on [001]-STO and two variants found on [110]-STO, formed to mitigate the large lattice misfit strain between the film and substrate. Our strategy thus provides a general pathway for orientation engineering of oxide epitaxy beyond substrate constraint.

Strain-insensitive ferromagnetic SrRuO3 thin films with ferrimagnetic CoFe2O4 buffer layer

Flexible electronics, such as wearable devices and biosensors, require materials that maintain their properties under mechanical stress. A recent study addresses this by focusing on SrRuO3 (SRO) thin films, which typically suffer reduced coercivity under strain. Herein, we introduce a novel approach by using CoFe2O4 (CFO) as a buffer layer in SRO/CFO/F-mica heterostructures to address this issue. When subjected to a strain of up to ±0.553 %, these heterostructures displayed a mere 11 % variation in saturation magnetic moment and coercive field, significantly outperforming SRO/BaTiO3 configurations, which showed a 95 % reduction in coercivity at only −0.3 % strain. This result demonstrates the effectiveness of the CFO layer in stabilizing the magnetic properties of SRO films against external mechanical deformations. These findings mark a significant advancement in the development of mechanically robust thin films for complex oxide heterostructures in flexible device applications.

Synergetic Optimization of Upper and Lower Surfaces of the SnO2 Electron Transport Layer for High-Performance n-i-p Perovskite Solar Cells.

The SnO2 electron transport layer (ETL) has been recognized as one of the most effective protocols for achieving high-efficiency perovskite solar cells (PSCs). To date, most research has primarily focused on the modification of the upper surface of SnO2 ETL films. The lower surface of the SnO2 film, which directly influences the film formation of solution-processed SnO2, is equally important but receives relatively less attention. Herein, we present a synergetic optimization approach involving the deposition of aluminum oxide (AlOx) via atomic layer deposition (ALD) as a buffer layer and the incorporation of rubidium acetate (RbAc) as an upper surface passivation additive. This process leads to a conformal coating of SnO2 nanoparticles, improved electrical performance, and higher-quality perovskite crystals. As a result, with this composite ETL film, the power conversion efficiency (PCE) reached 22.41 from 20.77%. Further modification with p-butyl iodide (BAI) on the perovskite upper surface increased the champion PCE to 23.32%, with a voltage loss of 0.41 V, ranking among the lowest values for the triple-cation mixed-halide perovskite absorber (1.58 eV). Importantly, the perovskite solar cells remained 87.30% of its initial performance after 14 days of aging and exhibited photostability under long-term UV (254 nm) illumination.

Thermodynamics of Ga2O3 Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition.

Heteroepitaxy of gallium oxide (Ga2O3) is gaining popularity to address the absence of p-type doping, limited thermal conductivity of Ga2O3 epilayers, and toward realizing high-quality p-n heterojunction. During the growth of β-Ga2O3 on 4H-SiC (0001) substrates using metal-organic chemical vapor deposition, we observed formation of incomplete, misoriented particles when the layer was grown at a temperature between 650 °C and 750 °C. We propose a thermodynamic model for Ga2O3 heteroepitaxy on foreign substrates which shows that the energy cost of growing β-Ga2O3 on 4H-SiC is slightly lower as compared to sapphire substrates, suggesting similar high-temperature growth as sapphire, typically in the range of 850 °C-950 °C, that can be used for the growth of β-Ga2O3 on SiC. A two-step modified growth method was developed where the nucleation layer was grown at 750 °C followed by a buffer layer grown at various temperatures from 920 °C to 950 °C. 2θ-ω scan of X-ray diffraction (XRD) and transmission electron microscope images confirm the β-polymorph of Ga2O3 with dominant peaks in the (-201) direction. The buffer layer grown at 950 °C using a "ramp-growth" technique exhibits root-mean-square surface roughness of 3 nm and full width of half maxima of XRD rocking curve as low as 0.79°, comparable to the most mature β-Ga2O3 heteroepitaxy on sapphire, as predicted by the thermodynamic model. Finally, the interface energy of an average Ga2O3 island grown on 4H-SiC is calculated to be 0.2 J/m2 from the cross-section scanning transmission electron microscope image, following the Wulff-Kaishew theorem of the equilibrium island shape.

LPEO enhanced LAGP composite solid electrolytes for lithium metal batteries

The application of solid electrolyte is expected to realize the commercialization of high energy density lithium metal batteries (LMBs). While the interfacial contact between solid inorganic electrolyte and electrodes has become a stumbling block for achieving stable cycling in LMBs. In this work, a Li-containing polyethylene oxide (LPEO) was introduced between LAGP and electrodes as a buffer layer to regulate the interfacial compatibility and reduce interfacial impedance, inhibiting the side reactions. Moreover, ether-oxygen bond on LPEO chain can coordinate with Li+ and guide the transportation of Li+, achieving fast Li+ diffusion between Li1+xAlxGe2-x(PO4)3 (LAGP) and electrodes. Specifically, the growth of lithium dendrites is effectively suppressed in LAGP with LPEO modification, which would lead to remarkable cycling stability and rate capability. Therefore, the Li|LPEO-LAGP|Li battery can cycle stably for more than 600 h at 0.1 mA cm−2. In addition, long-term performance of Li|LPEO-LAGP| LiFePO4 (LFP) battery was achieved at a rate of 0.4 C, and capacity retention is more than 74% after 200 cycles. The Li|LPEO-LAGP|LiNi0.8Co0.1Mn0.1O2 also realized the steady operation in the voltage range of 2.8–4.3 V.

Preparation of a/c-oriented YBa2Cu3O7−x homogeneous superconducting junctions via pulsed laser deposition

The growth orientation of YBa2Cu3O7−x (YBCO) is extremely sensitive to the growth atmosphere and the heat-treatment temperature. However, according to the existing literature, to obtain YBCO with preferred a-axis orientation, a buffer layer needs to be prepared on the substrate. In this work, YBCO films were grown via pulsed laser deposition, and the influence of N2 and O2 deposition atmospheres on the growth orientation of the YBCO films was studied. It was found that high-quality YBCO films with preferred c-axis orientation can be grown in O2 atmosphere, but it is difficult to grow a-axis-oriented YBCO films in O2 atmosphere without using a buffer layer; however, YBCO films with a high degree of preferred a-axis orientation can be grown in N2 atmosphere without using a buffer layer. Furthermore, an a/c-oriented homogeneous YBCO bilayer with c-axis orientation in the lower layer and a-axis orientation in the upper layer was prepared. X-ray diffraction and scanning transmission electron microscopy results show that the bilayer is epitaxial with a good a/c orientation, and the resistance–temperature curve shows the occurrence of two transitions at temperatures of 91 and 71 K. We believe that these temperatures correspond to the superconducting onset transition temperatures of YBCO in the c- and a-axis growth orientations, respectively. The superconducting current usually flows within the Cu–O plane. With its sudden change in the direction of the current at the interface, the homogeneous junction prepared in this work is expected to provide new ideas for the research of high-temperature superconducting junction devices.

Non-destructive buffer enabling near-infrared-transparent inverted inorganic perovskite solar cells toward 1400 h light-soaking stable perovskite/Cu(In,Ga)Se2 tandem solar cells

Near-infrared (NIR) transparent inverted all-inorganic perovskite solar cells (PSCs) are excellent top cell candidates in tandem applications. An essential challenge is the replacement of metal contacts with transparent conductive oxide (TCO) electrodes, which requires the introduction of a buffer layer to prevent sputtering damage. In this study, we show that the conventional buffers (i.e., small organic molecules and atomic layer deposited metal oxides) used for organic-inorganic hybrid perovskites are not applicable to all-inorganic perovskites, due to non-uniform coverage of the vulnerable layers underneath, deterioration upon ion bombardment and moisture induced perovskite phase transition. A thin film of metal oxide nanoparticles by the spin-coating method serves as a non-destructive buffer layer for inorganic PSCs. All-inorganic inverted near-infrared-transparent PSCs deliver a PCE of 17.46% and an average transmittance of 73.7% between 780 and 1200 nm. In combination with an 18.56% Cu(In,Ga)Se2 bottom cell, we further demonstrate the first all-inorganic perovskite/CIGS 4-T tandem solar cell with a PCE of 24.75%, which exhibits excellent illumination stability by maintaining 86.7% of its initial efficiency after 1400 h. The non-destructive buffer lays the foundation for efficient and stable NIR-transparent inverted inorganic perovskite solar cells and perovskite-based tandems.

Revitalising high voltage cable: Exploring effective repair methods and influential factors for buffer layer defects using conductive silicone rubber

Revitalising high voltage cable: Exploring effective repair methods and influential factors for buffer layer defects using conductive silicone rubber

Hydrothermally deposited Sb2S3 absorber, and a Sb2S3/CdS solar cell with VOC approaching 800 mV

We report the hydrothermal deposition of Sb2S3 thin film on top of CdS buffer layer, and the fabrication of prototype photovoltaic devices utilizing spiro-OMeTAD as the hole transport layer. The as-deposited films were amorphous, which transformed to polycrystalline after thermal processing. The pristine films were annealed at different temperatures and showed effective recrystallization at 350 °C which resulted in larger grains, intense XRD patterns, and significantly improved device parameters. The obtained VOC of 795 mV is among the highest reported for a Sb2S3 based solar cell. Deep level transient spectroscopy studies detected an electron trap with activation energy 0.61 eV in the pristine annealed absorber, which became deeper (0.66 eV) upon Na incorporation. However, the capture cross-section decreased by an order of magnitude, and the trap density halved. The reduction in the capture cross-section and trap density for the Na-incorporated device coincides with the improved EQE response in the mid- and long-wavelength regions and a 9 % increase in device efficiency. The light intensity dependence of VOC clearly demonstrated that Na incorporation reduced the trap-assisted recombination and facilitated efficient charge transport in the device.

Analysis and simulation of bulk polarization mechanism in p-GaN HEMT with AI component gradient buffer layer

In this paper,bulk polarization mechanism and radiation simulation of the Al component gradient buffer layer (GBL) and constant buffer layer (CBL) of p-GaN HEMT (p-GaN GBL-HEMT and p-GaN CBL-HEMT) are analyzed and studied. It is found that the p-GaN GBL-HEMT can significantly reduce the buffer leakage current. The linear gradient amplitude (the range of linear gradients of Al components vertically in the buffer) of 20%–25% Al components can significantly increase the breakdown voltage (V BK) of the device, up to 1312 V. Simultaneously, although the p-GaN GBL-HEMT reduces the 2DEG concentration, the device still has a specific on-resistance (R ON,sp) and drain saturation current (I DS,sat) equivalent to the p-GaN CBL-HEMT due to the conductivity modulation effect. Its Baliga figure of merit is up to 2.27 GW cm−2. Finally, through the SEE simulation and the bulk polarization mechanism analysis, it is found that the drain transient current (I DS,trans) by the identical incident particles in the p-GaN GBL-HEMT is lower than that in the p-GaN CBL-HEMT, and the I DS,trans decreases with the increase of the Al components gradient amplitude. Therefore, the p-GaN GBL-HEMT provides a new idea for improving the electrical performance and SEE hardening.