Bright Light-emitting Diodes Research Articles

Bright and stable perovskite light-emitting diodes in the near-infrared range.

Perovskite light-emitting diodes (LEDs) have attracted broad attention due to their rapidly increasing external quantum efficiencies (EQEs)1-15. However, most high EQEs of perovskite LEDs are reported at low current densities (<1 mA cm-2) and low brightness. Decrease in efficiency and rapid degradation at high brightness inhibit their practical applications. Here, we demonstrate perovskite LEDs with exceptional performance at high brightness, achieved by the introduction of a multifunctional molecule that simultaneously removes non-radiative regions in the perovskite films and suppresses luminescence quenching of perovskites at the interface with charge-transport layers. The resulting LEDs emit near-infrared light at 800 nm, show a peak EQE of 23.8% at 33 mA cm-2 and retain EQEs more than 10% at high current densities of up to 1,000 mA cm-2. In pulsed operation, they retain EQE of 16% at an ultrahigh current density of 4,000 mA cm-2, along with a high radiance of more than 3,200 W s-1 m-2. Notably, an operational half-lifetime of 32 h at an initial radiance of 107 W s-1 m-2 has been achieved, representing the best stability for perovskite LEDs having EQEs exceeding 20% at high brightness levels. The demonstration of efficient and stable perovskite LEDs at high brightness is an important step towards commercialization and opens up new opportunities beyond conventional LED technologies, such as perovskite electrically pumped lasers.

Highly bright and stable single-crystal perovskite light-emitting diodes

Highly bright and stable single-crystal perovskite light-emitting diodes

Efficient and Bright Deep-Red Light-Emitting Diodes based on a Lateral 0D/3D Perovskite Heterostructure.

Bright and efficient deep-red light-emitting diodes (LEDs) are important for applications in medical therapy and biological imaging due to the high penetration of deep-red photons into human tissues. Metal-halide perovskites have potential to achieve bright and efficient electroluminescence due to their favorable optoelectronic properties. However, efficient and bright perovskite-based deep-red LEDs have not been achieved yet, due to either Auger recombination in low-dimensional perovskites or trap-assisted nonradiative recombination in 3D perovskites. Here, a lateral Cs4PbI6/FAxCs1- xPbI3 (0D/3D) heterostructure that can enable efficient deep-red perovskite LEDs at very high brightnessis demonstrated. The Cs4PbI6 can facilitate the growth of low-defect FAxCs1- xPbI3, and act as low-refractive-index grids, which can simultaneously reduce nonradiative recombination and enhance light extraction. This device reaches a peak external quantum efficiency of 21.0% at a photon flux of 1.75×1021 m-2 s-1, which is almost two orders of magnitude higher than that of reported high-efficiency deep-red perovskite LEDs. Theses LEDs are suitable for pulse oximeters, showing an error <2% of blood oxygen saturation compared with commercial oximeters.

Efficient and bright green InP quantum dot light-emitting diodes enabled by a self-assembled dipole interface monolayer.

The interfacial state between the hole transport layer (HTL) and quantum dots (QDs) plays a crucial role in the optoelectronic performance of light-emitting diodes. Herein, we reported an efficient and bright green indium phosphide (InP) QD-based light-emitting diode (LED) by introducing a self-assembled monolayer of 4-bromo-2-fluorothiophenol (SAM-BFTP) molecule to improve interfacial charge transport in LED devices. The molecular dipole layer at the interface of the QD layer and HTL not only reduces the energy barrier of holes injected into QDs through vacuum energy level shift but also inhibits the fluorescence quenching of QDs caused by the HTL. Moreover, copper ions doped into phosphomolybdic acid (Cu:PMA) is selected as the hole injection layer (HIL) into the device system based on the SAM-BFTP molecule, and as a result, a green InP QD LED (QLED) with a maximum external quantum efficiency (EQE) of 8.46% and a luminance of 18 356 cd m-2 was realized. This work can inform and underpin the future development of InP-based QLEDs with concurrent high efficiency and brightness.

Ligand-assisted structure tailoring of highly luminescent Cu-In-Zn-S/ZnS//ZnS quantum dots for bright and stable light-emitting diodes.

Harnessing environment-friendly and low-cost multinary Cu-In-Zn-S quantum dots (QDs) as emitters for light-emitting diodes (LEDs) has attracted great attention for display and lighting application. However, suboptimal QD structure is a huge obstacle, which results in serious non-radiative recombination and efficiency roll-off. Herein, we synthesized structure-tailored Cu-In-Zn-S/ZnS//ZnS QDs by improving the reactivity of shell growth by 2-ethylhexanoic acid (EHA) ligands. The EHA-assisted shell growth can boost an extended alloyed layer at the core-shell interface and a smoothed confinement barrier, which effectively passivate the interface defects and suppress Förster resonance energy transfer (FRET) process. These synthesized QDs display a bright photoluminescence emission (quantum yield of 83%) and a larger size of 8.4nm. Moreover, the resulting LEDs based on the EHA-assisted QDs exhibit a maximum luminance of 8074cd/m2, and a current efficiency of 7.3cd/A with a low efficiency roll-off. Our results highlight a remarkable ligand strategy to tailor the QD structure for high performance QD-based LEDs.

In Situ Halide Exchange of Cesium Lead Halide Perovskites for Blue Light-Emitting Diodes.

3D perovskites are promising to achieve efficient and bright deep-blue light-emitting diodes (LEDs), which are required for lighting and display applications. However, the efficiency of deep-blue 3D perovskite-based LEDs is limited by high density of defects in perovskites, and their deep-blue emission is not easy to achieve due to the halide phase separation and low solubility of chloride in precursor solutions. Here, an in situ halide exchange method is developed to achieve deep-blue 3D perovskites by spin-coating an organic halide salts solution to treat blue 3D perovskites. It is revealed that the halide-exchange process is mainly determined by halide ion diffusion targeting a concentration equalization, which leads to homogeneous 3D mixed-halide perovskites. By further introducing multifunctional organic ammonium halide salts into the exchange solution to passivate defects, high-quality deep-blue perovskites with reduced trap density can be obtained. This approach leads to efficient deep-blue perovskite LEDs with a peak external quantum efficiency (EQE) of 4.6% and a luminance of 1680cdm-2 , which show color coordinates of (0.131, 0.055), very close to the Rec. 2020 blue standard. Moreover, the halide exchange method is bidirectional, and blue perovskite LEDs can be achieved with color coordinates of (0.095, 0.160), exhibiting a high EQE of 11.3%.

Stability of Perovskite Light‐Emitting Diodes: Existing Issues and Mitigation Strategies Related to Both Material and Device Aspects

Metal halide perovskites combine excellent electronic and optical properties, such as defect tolerance and high photoluminescence efficiency, with the benefits of low-cost, large-area, solution-based processing. Composition- and dimension-tunable properties of perovskites have already been utilized in bright and efficient light-emitting diodes (LEDs). At the same time, there are still great challenges ahead to achieving operational and spectral stability of these devices. In this review, the origins of instability of perovskite materials, and reasons for their degradation in LEDs are considered. Then, strategies for improving the stability of perovskite materials are reviewed, such as compositional engineering, dimensionality control, defect passivation, suitable encapsulation matrices, and fabrication of core/shell perovskite nanocrystals. For improvement of the operational stability of perovskite LEDs, the use of inorganic charge-transport layers, optimization of charge balance, and proper thermal management are considered. The review is concluded with a detailed account of the current challenges and a perspective on the key approaches and opportunities on how to reach the goal of stable, bright, and efficient perovskite LEDs.

Multicolor Luminescent Carbon Dots: Tunable Photoluminescence, Excellent Stability, and Their Application in Light-Emitting Diodes

Carbon dots (CDs) are attracting much interest due to their excellent photoelectric properties and wide range of potential applications. However, it is still a challenge to regulate their bandgap emissions to achieve full-color CDs with high emissions. Herein, we propose an approach for producing full-color emissive CDs by employing a solvent engineering strategy. By only tuning the volume ratio of water and dimethylformamide (H2O/DMF), the photoluminescence (PL) emission wavelengths of the CDs can be changed from 451 to 654 nm. Different fluorescence features of multicolor CDs were systematically investigated. XRD, SEM, TEM, Abs/PL/PLE, XPS, and PL decay lifetime characterizations provided conclusive evidence supporting the extent to which the solvent controlled the dehydration and carbonization processes of the precursors, leading to a variation in their emission color from red to blue. The as-prepared CDs exhibited excellent and stable fluorescence performance even after being heated at 80 °C for 48 h and with UV light continuously irradiated for 15 h. Based on their excellent fluorescent properties and photothermal stability, bright multicolor light-emitting diodes with a high CRI of up to 91 were obtained. We anticipate that these full-color emissive CDs are beneficial for applications in lighting, display, and other fields.

Exciton Transfer Dynamics and Annihilation in Rubidium–Cesium-Alloyed, Quasi-Two-Dimensional Perovskite

Light-emitting diodes (LEDs) based on perovskite materials are a new group of devices that are currently undergoing rapid development. A significant fraction of these devices is based on quasi-2D perovskites fabricated with large organic cations. In this work, we describe the ultrafast scale dynamics in a quasi-2D PEA2(Rb0.6Cs0.4)2Pb3Br10 perovskite material with an excess of RbBr, which was previously used to fabricate blue-emitting perovskite LEDs. The results obtained using transient absorption spectroscopy are consistent with the assumption that the carrier dynamics in this material are dominated by excitons, most of which decay by exciton–exciton annihilation when high-intensity excitation is used. Furthermore, a slow energy transfer between different quasi-2D domains taking place within 50 ps was observed. The content of the RbBr did not show any strong influence on the observed dynamics. Our results show that the exciton–exciton annihilation proceeds much faster in thin (n = 2) quasi-2D domains than in thick (n ≥ 4) domains. This finding implies that perovskites with high-n, quasi-2D domains are preferable for efficient perovskite lasers and bright perovskite LEDs.

Small dose of phosphorescent dopant enabling high efficiency and bright solution-processed sky-blue organic light-emitting diodes

In this work, we demonstrate the simultaneous use of thermally activated delayed fluorescence (TADF) material and a small dose of phosphorescent material to construct TADF-phosphorescent mixed emitting system, which enables the OLED exhibiting high device performance. To achieve this, a blue TADF material, 10,10'- (4,4′-Sulfonylbis (4,1-phenylene)) bis (9,9-dimethyl-9,10-dihydroacridine) (DMAC-DPS), and a conventional blue phosphor with similar emission color to DMAC-DPS, Bis [2-(4,6-difluorophenyl) pyridinato-C2, N] (picolinato) iridium (III) (FIrpic), are incorporated together into 1,3-Bis(carbazol-9-yl) benzene (mCP) host to constructed the mixed emitting system. The device has achieved the maximum current efficiency of 21.1 cd/A with FIrpic concentration of 1%; meanwhile, the luminance of the device has also been improved. There merits are superior to the optimized TADF OLED and the optimized phosphorescent OLED based on 16% FIrpic in device efficiency. In view of the expensive price of phosphorescent materials, the strategy presented here will greatly reduce the material cost without the cost of device performance. Through investigations on the energy transfer process and the film morphology in the mixed emitting system, the main cause of the improvement has been unveiled. The study may provide a simple but effective strategy to achieve low-cost, high-performance solution-processed OLEDs.

Highly Emissive Quasi-2D Perovskites Enabled by a Multifunctional Molecule for Bright Light-Emitting Diodes.

Quasi-two-dimensional (quasi-2D) perovskite has exhibited great potential to be an ideal luminescent material for perovskite light-emitting diodes (PeLEDs). However, the low-order phases (especially n = 1 phase) and the inevitable defects result in massive nonradiative recombination and poor emission efficiency. Herein, a multifunctional molecule of tetrabutylammonium dihydrogen phosphate (TDP) is introduced to simultaneously suppress the low-n phase, passivate the defects, and increase the exciton binding energy of the quasi-2D perovskite for massive radiative recombination and thus high emission efficiency. The multifunctional roles of TDP are realized by the synergistic effects of tetrabutylammonium cation and dihydrogen phosphate anion, both of which show strong interaction with the lead bromide octahedron of the perovskite. As a result, the TDP-incorporated perovskite films show a great enhancement of the emission efficiency with a remarkable increase in photoluminescence quantum yield (PLQY) from 34.6 to 96.9% at the wavelength of 522 nm. The strengthened radiative recombination promotes efficient emission efficiency with over 2.5-fold improvement in external quantum efficiency (EQE) and current efficiency (CE) from 3.27% and 10.83 cd A-1 to 9.25% and 28.35 cd A-1, respectively, as well as high brightness with over 37% enhancement from 12713 to 17536 cd m-2. Consequently, this work contributes to an efficient approach to employ a multifunctional molecule for highly emissive quasi-2D perovskites and enhanced quasi-2D PeLED performances.

α-BaF2 Nanoparticle Substrate-Enabled γ-CsPbI3 Heteroepitaxial Growth for Efficient and Bright Deep-Red Light-Emitting Diodes.

All-inorganic CsPbI3 perovskite is attractive for deep-red light-emitting diodes (LEDs) because of its excellent carrier mobility, high color purity, and solution processability. However, the high phase transition energy barrier of optically active CsPbI3 black phase hinders the fabrication of efficient and bright LEDs. Here, we report a novel α-BaF2 nanoparticle substrate-promoted solution-processable heteroepitaxial growth to overcome this hindrance and obtain high-quality optically active γ-CsPbI3 thin films, achieving efficient and bright deep-red LEDs. We unravel that the highly exposed planes on the α-BaF2 nanoparticle-based heteroepitaxial growth substrate have a 99.5% lattice matching degree with the (110) planes of γ-CsPbI3. This ultrahigh lattice matching degree initiates solution-processed interfacial strain-free epitaxial growth of low-defect and highly oriented γ-CsPbI3 thin films on the substrate. The obtained γ-CsPbI3 thin films are uniform, smooth, and highly luminescent, based on which we fabricate efficient and bright deep-red LEDs with a high peak external quantum efficiency of 14.1% and a record luminance of 1325 cd m-2.

Cesium Lead Halide Perovskite Nanocrystals Assembled in Metal-Organic Frameworks for Stable Blue Light Emitting Diodes.

All inorganic cesium lead trihalide nanocrystals are promising light emitters for bright light emitting diodes (LEDs). Here, CsPb(BrCl)1.5 nanocrystals in metal‐organic frameworks (MOF) thin films are demonstrated to achieve bright and stable blue LEDs. The lead metal nodes in the MOF thin film react with Cs‐halide salts, resulting in 10–20 nm nanocrystals. This is revealed by X‐ray scattering and transmission electron microscopy. Employing the CsPbX3‐MOF thin films as emission layers, bright deep blue and sky‐blue LEDs are demonstrated that emit at 452 and 476 nm respectively. The maximum external quantum efficiencies of these devices are 0.72% for deep blue LEDs and 5.6% for sky blue LEDs. More importantly, the device can maintain 50% of its original electroluminescence (T 50) for 2.23 h when driving at 4.2 V. Detailed optical spectroscopy and time‐of‐flight secondary ion mass spectroscopy suggest that the ion migration can be suppressed that maintains the emission brightness and spectra. The study provides a new route for fabricating stable blue light emitting diodes with all‐inorganic perovskite nanocrystals.

Bright and efficient sky-blue perovskite light-emitting diodes via doping of π-conjugated molecule tetraphenylethylene

As a star material, to date, hybrid perovskites with green and red emission show high photoluminescence quantum yields, and the external quantum efficiency (EQE) of perovskite light-emitting diodes (PeLEDs) has exceeded 20%. However, due to the poor film quality and large energy level mismatch, the performance of blue PeLEDs still lags far behind. Herein, a π-conjugated tetraphenylethylene (TPE) doping strategy is demonstrated to improve both the efficiency and stability of sky-blue PeLEDs. With proper TPE doping, the defects are passivated and the energy levels of multi-cation perovskite are elevated, resulting in a smooth and dense film with high PLQY (∼27.8%). The champion PeLED shows a brightness of 12,963 cd/cm 2 at 484 nm and maximum EQE of 6.97%. Moreover, after TPE doping, the operational stability of the PeLED increases from 290 s to 960 s under continuous working condition. The π-conjugated molecule doping strategy could open up a new avenue for the design of high-performing blue PeLEDs. • A high-quality sky-blue-emitting multi-cation perovskite film doped by tetraphenylethylene is prepared. • By introduction of TPE, the defects are passivated and the energy levels of perovskite are elevated. • The optimized sky-blue PeLED exhibits high brightness and improved device stability under continuous operation.

Aluminum chloride assisted synthesis of near-unity emitting Mn2+-doped CsPbCl3 perovskite nanocrystals for bright white light-emitting diodes

Enhanced orange-red emitting Mn2+-doped CsPbCl3 nanocrystals with a near-unity photoluminescence quantum yield of up to 98% are synthesized through an AlCl3-assisted hot-injection route.

Highly emissive and color-tunable copper-based halide composites for bright white light-emitting diodes

The blue-emissive Cs3Cu2I5, yellow-emissive CsCu2I3, and white-emissive Cs3Cu2I5@CsCu2I3 composites have been obtained by a one-step microwave method. The three UV-pumped WLEDs are fabricated by using the composites, and a CRI of 92 is achieved.

Very bright and efficient ITO-free narrow-spectrum micro-cavity top-emitting organic light-emitting diodes with low operation voltage

Top-emitting organic light-emitting diodes (TEOLEDs) achieved an ultra-high power efficiency of up to 186.38 lm W−1, an impressive EQE as high as 47.4%, and a low operation voltage.

Bright and Stable Light-Emitting Diodes Based on Perovskite Quantum Dots in Perovskite Matrix.

Light-emitting diodes (LEDs) based on metal halide perovskite quantum dots (QDs) have achieved impressive external quantum efficiencies; however, the lack of surface protection of QDs, combined with efficiency droop, decreases device operating lifetime at brightnesses of interest. The epitaxial incorporation of QDs within a semiconducting shell provides surface passivation and exciton confinement. Achieving this goal in the case of perovskite QDs remains an unsolved challenge in view of the materials' chemical instability. Here, we report perovskite QDs that remain stable in a thin layer of precursor solution of perovskite, and we use strained QDs as nucleation centers to drive the homogeneous crystallization of a perovskite matrix. Type-I band alignment ensures that the QDs are charge acceptors and radiative emitters. The new materials show suppressed Auger bi-excition recombination and bright luminescence at high excitation (600 W cm-2), whereas control materials exhibit severe bleaching. Primary red LEDs based on the new materials show an external quantum efficiency of 18%, and these retain high performance to brightnesses exceeding 4700 cd m-2. The new materials enable LEDs having an operating half-life of 2400 h at an initial luminance of 100 cd m-2, representing a 100-fold enhancement relative to the best primary red perovskite LEDs.

Bright and stable light-emitting diodes made with perovskite nanocrystals stabilized in metal–organic frameworks

Perovskite nanocrystals are exceptional candidates for light-emitting diodes (LEDs). However, they are unstable in the solid film and tend to degrade back to the bulk phase, which undermines their potential for LEDs. Here we demonstrate that perovskite nanocrystals stabilized in metal–organic framework (MOF) thin films make bright and stable LEDs. The perovskite nanocrystals in MOF thin films can maintain the photoluminescence and electroluminescence against continuous ultraviolet irradiation, heat and electrical stress. As revealed by optical and X-ray spectroscopy, the strong emission originates from localized carrier recombination. Bright LEDs made from perovskite-MOF nanocrystals are demonstrated with a maximum external quantum efficiency of over 15% and a high brightness of over 105 cd m−2 after the device reaches stabilization. During LED operation, the nanocrystals can be well preserved, free of ion migration or crystal merging through protection by the MOF matrix, leading to a stable performance over 50 hours. The use of metal–organic frameworks helps protect perovskite nanocrystals, resulting in bright, stable light-emitting diodes.

Optimizing the PMMA Electron-Blocking Layer of Quantum Dot Light-Emitting Diodes.

Quantum dots (QDs) are promising candidates for producing bright, color-pure, cost-efficient, and long-lasting QD-based light-emitting diodes (QDLEDs). However, one of the significant problems in achieving high efficiency of QDLEDs is the imbalance between the rates of charge-carrier injection into the emissive QD layer and their transport through the device components. Here we investigated the effect of the parameters of the deposition of a poly (methyl methacrylate) (PMMA) electron-blocking layer (EBL), such as PMMA solution concentration, on the characteristics of EBL-enhanced QDLEDs. A series of devices was fabricated with the PMMA layer formed from acetone solutions with concentrations ranging from 0.05 to 1.2 mg/mL. The addition of the PMMA layer allowed for an increase of the maximum luminance of QDLED by a factor of four compared to the control device without EBL, that is, to 18,671 cd/m2, with the current efficiency increased by an order of magnitude and the turn-on voltage decreased by ~1 V. At the same time, we have demonstrated that each particular QDLED characteristic has a maximum at a specific PMMA layer thickness; therefore, variation of the EBL deposition conditions could serve as an additional parameter space when other QDLED optimization approaches are being developed or implied in future solid-state lighting and display devices.