AbstractEvolution of the fractional change of electrical resistance ΔR/R in thin films of Au on (001) substrates of semi-insulating GaAs has been investigated as a function of time t, temperature T, and current density j. Initially, ΔR/R increases linearly with increasing t for constant T and j, and exponentially with increasing T for constant t and j, characterized by an activation energy of 0.73 eV. An analytical model is developed to evaluate ΔR/R for the early stages of electromigration. This model is based on flux divergence at grain boundary triple junctions resulting from variations of grain boundary inclination and/or diffusivity. Using a Monte Carlo method, conducting lines containing a prescribed number of random triple junctions are simulated, wherein distribution of mass flux divergence determines initial values of ΔR/R. Moreover, by selection of an appropriate failure criterion, the sequence of cumulative failures is characterized by a log-normal-like distribution, which defines mean time to failure and corresponding standard deviation. In general, the model is in good agreement with experimental observations.
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